JP2005183938A5 - - Google Patents

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Publication number
JP2005183938A5
JP2005183938A5 JP2004327534A JP2004327534A JP2005183938A5 JP 2005183938 A5 JP2005183938 A5 JP 2005183938A5 JP 2004327534 A JP2004327534 A JP 2004327534A JP 2004327534 A JP2004327534 A JP 2004327534A JP 2005183938 A5 JP2005183938 A5 JP 2005183938A5
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JP
Japan
Prior art keywords
illuminator
polarization
illumination
ils
polarization states
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JP2004327534A
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English (en)
Japanese (ja)
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JP2005183938A (ja
JP4491332B2 (ja
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Publication of JP2005183938A publication Critical patent/JP2005183938A/ja
Publication of JP2005183938A5 publication Critical patent/JP2005183938A5/ja
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Publication of JP4491332B2 publication Critical patent/JP4491332B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004327534A 2003-12-19 2004-11-11 最適化した偏光照明 Expired - Fee Related JP4491332B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53066203P 2003-12-19 2003-12-19

Publications (3)

Publication Number Publication Date
JP2005183938A JP2005183938A (ja) 2005-07-07
JP2005183938A5 true JP2005183938A5 (enExample) 2007-08-02
JP4491332B2 JP4491332B2 (ja) 2010-06-30

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ID=34520284

Family Applications (1)

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JP2004327534A Expired - Fee Related JP4491332B2 (ja) 2003-12-19 2004-11-11 最適化した偏光照明

Country Status (7)

Country Link
US (3) US7292315B2 (enExample)
EP (1) EP1544679B1 (enExample)
JP (1) JP4491332B2 (enExample)
KR (1) KR100919856B1 (enExample)
CN (1) CN100524028C (enExample)
SG (1) SG135042A1 (enExample)
TW (1) TWI373278B (enExample)

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US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080018203A (ko) * 2005-06-24 2008-02-27 코닌클리케 필립스 일렉트로닉스 엔.브이. 조명 시스템의 편광의 특성을 기술하기 위한 방법 및디바이스
US7804646B2 (en) * 2006-01-31 2010-09-28 Asml Masktools B.V. Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
US7548315B2 (en) * 2006-07-27 2009-06-16 Asml Netherlands B.V. System and method to compensate for critical dimension non-uniformity in a lithography system
US7705998B2 (en) * 2007-09-12 2010-04-27 Infineon Technologies Ag Method for evaluating an optical imaging process
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2009251521A (ja) * 2008-04-10 2009-10-29 Jedat Inc ガラスデータ設計システム、方法およびプログラム
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
NL2007306A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
JP2012099596A (ja) * 2010-11-01 2012-05-24 Panasonic Corp 照明形状の最適化方法、マスク形状の最適化方法及びパターン形成方法
JP2012169483A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 露光条件決定プログラム
CN106028585B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于牛顿极值搜索算法的双闭环照明节能控制方法
CN106028584B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于梯度极值搜索算法的双闭环照明节能控制方法
CN106341938B (zh) * 2016-11-07 2018-08-07 电子科技大学 基于变幅值牛顿极值搜索算法的照明节能控制方法
EP3336608A1 (en) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Method and apparatus for image analysis
DE102017115262B9 (de) * 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie

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US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP3339593B2 (ja) 1993-04-22 2002-10-28 株式会社ニコン 投影露光装置、及び該装置を用いた素子製造方法
US5559583A (en) 1994-02-24 1996-09-24 Nec Corporation Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
US6491396B2 (en) * 2000-02-15 2002-12-10 Seiko Epson Corporation Projector modulating a plurality of partial luminous fluxes according to imaging information by means of an electro-optical device
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7396558B2 (en) 2001-01-31 2008-07-08 Toray Industries, Inc. Integrated mask and method and apparatus for manufacturing organic EL device using the same
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7411677B2 (en) * 2003-09-17 2008-08-12 Photonic Lattice Inc. Driverless ellipsometer and ellipsometry
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TW200523524A (en) 2003-11-05 2005-07-16 Asml Masktools Bv Eigen decomposition based OPC model
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination

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