JP4477305B2 - スピントランジスタ及びそれを用いた不揮発性メモリ - Google Patents

スピントランジスタ及びそれを用いた不揮発性メモリ Download PDF

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Publication number
JP4477305B2
JP4477305B2 JP2003086145A JP2003086145A JP4477305B2 JP 4477305 B2 JP4477305 B2 JP 4477305B2 JP 2003086145 A JP2003086145 A JP 2003086145A JP 2003086145 A JP2003086145 A JP 2003086145A JP 4477305 B2 JP4477305 B2 JP 4477305B2
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Japan
Prior art keywords
spin
transistor
ferromagnetic
layer
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003086145A
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English (en)
Japanese (ja)
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JP2004111904A5 (enExample
JP2004111904A (ja
Inventor
聡 菅原
雅明 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Publication date
Application filed by Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to JP2003086145A priority Critical patent/JP4477305B2/ja
Priority to TW092120200A priority patent/TWI310184B/zh
Priority to KR1020057001401A priority patent/KR100977829B1/ko
Priority to PCT/JP2003/009438 priority patent/WO2004012272A1/ja
Priority to US10/522,241 priority patent/US7423327B2/en
Priority to CNB038224801A priority patent/CN100470844C/zh
Priority to EP03771333A priority patent/EP1555694B1/en
Priority to AU2003252691A priority patent/AU2003252691A1/en
Priority to CN2007101696922A priority patent/CN101202302B/zh
Publication of JP2004111904A publication Critical patent/JP2004111904A/ja
Publication of JP2004111904A5 publication Critical patent/JP2004111904A5/ja
Priority to US11/979,220 priority patent/US7825485B2/en
Priority to US11/979,221 priority patent/US7671433B2/en
Application granted granted Critical
Publication of JP4477305B2 publication Critical patent/JP4477305B2/ja
Priority to US12/923,450 priority patent/US8026563B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2003086145A 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ Expired - Fee Related JP4477305B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ
TW092120200A TWI310184B (en) 2002-07-25 2003-07-24 Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors
AU2003252691A AU2003252691A1 (en) 2002-07-25 2003-07-25 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
US10/522,241 US7423327B2 (en) 2002-07-25 2003-07-25 Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
CNB038224801A CN100470844C (zh) 2002-07-25 2003-07-25 基于自旋滤波器效应的自旋晶体管和利用自旋晶体管的非易失存储器
EP03771333A EP1555694B1 (en) 2002-07-25 2003-07-25 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
KR1020057001401A KR100977829B1 (ko) 2002-07-25 2003-07-25 스핀 필터 효과를 이용한 스핀 트랜지스터 및 스핀트랜지스터를 이용한 비휘발성 메모리
CN2007101696922A CN101202302B (zh) 2002-07-25 2003-07-25 基于自旋滤波器效应的自旋晶体管和利用自旋晶体管的非易失存储器
PCT/JP2003/009438 WO2004012272A1 (ja) 2002-07-25 2003-07-25 スピンフィルタ効果を用いたスピントランジスタ及びスピントランジスタを用いた不揮発性メモリ
US11/979,220 US7825485B2 (en) 2002-07-25 2007-10-31 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
US11/979,221 US7671433B2 (en) 2002-07-25 2007-10-31 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
US12/923,450 US8026563B2 (en) 2002-07-25 2010-09-22 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002217336 2002-07-25
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009062278A Division JP5064429B2 (ja) 2002-07-25 2009-03-16 スピントランジスタ及びそれを用いた不揮発性メモリ
JP2009062281A Division JP5064430B2 (ja) 2002-07-25 2009-03-16 スピントランジスタ及びそれを用いた不揮発性メモリ

Publications (3)

Publication Number Publication Date
JP2004111904A JP2004111904A (ja) 2004-04-08
JP2004111904A5 JP2004111904A5 (enExample) 2005-09-22
JP4477305B2 true JP4477305B2 (ja) 2010-06-09

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Family Applications (1)

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JP2003086145A Expired - Fee Related JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ

Country Status (8)

Country Link
US (4) US7423327B2 (enExample)
EP (1) EP1555694B1 (enExample)
JP (1) JP4477305B2 (enExample)
KR (1) KR100977829B1 (enExample)
CN (1) CN100470844C (enExample)
AU (1) AU2003252691A1 (enExample)
TW (1) TWI310184B (enExample)
WO (1) WO2004012272A1 (enExample)

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JP4212397B2 (ja) 2003-03-28 2009-01-21 株式会社東芝 磁気メモリ及びその書き込み方法
EP1610386A4 (en) * 2003-03-31 2009-04-01 Japan Science & Tech Agency TUNNEL TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS AND NON-VOLATILE MEMORY THEREOF
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
US7411235B2 (en) 2004-06-16 2008-08-12 Kabushiki Kaisha Toshiba Spin transistor, programmable logic circuit, and magnetic memory
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JP4693634B2 (ja) * 2006-01-17 2011-06-01 株式会社東芝 スピンｆｅｔ
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FR2966636B1 (fr) * 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
JP5778945B2 (ja) * 2011-02-24 2015-09-16 株式会社東芝 連想メモリ
JP5225419B2 (ja) 2011-03-28 2013-07-03 株式会社東芝 スピンｍｏｓｆｅｔを用いたメモリ回路、メモリ機能付きパストランジスタ回路、スイッチングボックス回路、スイッチングブロック回路、およびフィールドプログラマブルゲートアレイ
KR101457511B1 (ko) * 2011-08-18 2014-11-04 코넬 유니버시티 스핀 홀 효과 자기 장치, 방법, 및 적용
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Also Published As

Publication number Publication date
US7671433B2 (en) 2010-03-02
WO2004012272A1 (ja) 2004-02-05
EP1555694A4 (en) 2008-06-04
US20080067501A1 (en) 2008-03-20
KR100977829B1 (ko) 2010-08-24
AU2003252691A1 (en) 2004-02-16
US7825485B2 (en) 2010-11-02
US7423327B2 (en) 2008-09-09
CN1685526A (zh) 2005-10-19
TW200405339A (en) 2004-04-01
TWI310184B (en) 2009-05-21
US20080061336A1 (en) 2008-03-13
EP1555694A1 (en) 2005-07-20
KR20050025996A (ko) 2005-03-14
US8026563B2 (en) 2011-09-27
EP1555694B1 (en) 2012-02-29
JP2004111904A (ja) 2004-04-08
US20110031545A1 (en) 2011-02-10
US20060043443A1 (en) 2006-03-02
CN100470844C (zh) 2009-03-18

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