JP2004111904A5 - - Google Patents

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Publication number
JP2004111904A5
JP2004111904A5 JP2003086145A JP2003086145A JP2004111904A5 JP 2004111904 A5 JP2004111904 A5 JP 2004111904A5 JP 2003086145 A JP2003086145 A JP 2003086145A JP 2003086145 A JP2003086145 A JP 2003086145A JP 2004111904 A5 JP2004111904 A5 JP 2004111904A5
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JP
Japan
Prior art keywords
spin
transistor
wiring
ferromagnetic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003086145A
Other languages
English (en)
Japanese (ja)
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JP4477305B2 (ja
JP2004111904A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003086145A external-priority patent/JP4477305B2/ja
Priority to JP2003086145A priority Critical patent/JP4477305B2/ja
Priority to TW092120200A priority patent/TWI310184B/zh
Priority to PCT/JP2003/009438 priority patent/WO2004012272A1/ja
Priority to US10/522,241 priority patent/US7423327B2/en
Priority to CNB038224801A priority patent/CN100470844C/zh
Priority to EP03771333A priority patent/EP1555694B1/en
Priority to KR1020057001401A priority patent/KR100977829B1/ko
Priority to CN2007101696922A priority patent/CN101202302B/zh
Priority to AU2003252691A priority patent/AU2003252691A1/en
Publication of JP2004111904A publication Critical patent/JP2004111904A/ja
Publication of JP2004111904A5 publication Critical patent/JP2004111904A5/ja
Priority to US11/979,221 priority patent/US7671433B2/en
Priority to US11/979,220 priority patent/US7825485B2/en
Publication of JP4477305B2 publication Critical patent/JP4477305B2/ja
Application granted granted Critical
Priority to US12/923,450 priority patent/US8026563B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003086145A 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ Expired - Fee Related JP4477305B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ
TW092120200A TWI310184B (en) 2002-07-25 2003-07-24 Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors
AU2003252691A AU2003252691A1 (en) 2002-07-25 2003-07-25 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
US10/522,241 US7423327B2 (en) 2002-07-25 2003-07-25 Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
CNB038224801A CN100470844C (zh) 2002-07-25 2003-07-25 基于自旋滤波器效应的自旋晶体管和利用自旋晶体管的非易失存储器
EP03771333A EP1555694B1 (en) 2002-07-25 2003-07-25 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
KR1020057001401A KR100977829B1 (ko) 2002-07-25 2003-07-25 스핀 필터 효과를 이용한 스핀 트랜지스터 및 스핀트랜지스터를 이용한 비휘발성 메모리
CN2007101696922A CN101202302B (zh) 2002-07-25 2003-07-25 基于自旋滤波器效应的自旋晶体管和利用自旋晶体管的非易失存储器
PCT/JP2003/009438 WO2004012272A1 (ja) 2002-07-25 2003-07-25 スピンフィルタ効果を用いたスピントランジスタ及びスピントランジスタを用いた不揮発性メモリ
US11/979,220 US7825485B2 (en) 2002-07-25 2007-10-31 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
US11/979,221 US7671433B2 (en) 2002-07-25 2007-10-31 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
US12/923,450 US8026563B2 (en) 2002-07-25 2010-09-22 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002217336 2002-07-25
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009062278A Division JP5064429B2 (ja) 2002-07-25 2009-03-16 スピントランジスタ及びそれを用いた不揮発性メモリ
JP2009062281A Division JP5064430B2 (ja) 2002-07-25 2009-03-16 スピントランジスタ及びそれを用いた不揮発性メモリ

Publications (3)

Publication Number Publication Date
JP2004111904A JP2004111904A (ja) 2004-04-08
JP2004111904A5 true JP2004111904A5 (enExample) 2005-09-22
JP4477305B2 JP4477305B2 (ja) 2010-06-09

Family

ID=31190300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003086145A Expired - Fee Related JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ

Country Status (8)

Country Link
US (4) US7423327B2 (enExample)
EP (1) EP1555694B1 (enExample)
JP (1) JP4477305B2 (enExample)
KR (1) KR100977829B1 (enExample)
CN (1) CN100470844C (enExample)
AU (1) AU2003252691A1 (enExample)
TW (1) TWI310184B (enExample)
WO (1) WO2004012272A1 (enExample)

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KR100681379B1 (ko) 2003-03-07 2007-02-12 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 의존 전달 특성을 갖는 전계 효과 트랜지스터 및그것을 이용한 비휘발성 메모리
JP4212397B2 (ja) 2003-03-28 2009-01-21 株式会社東芝 磁気メモリ及びその書き込み方法
EP1610386A4 (en) * 2003-03-31 2009-04-01 Japan Science & Tech Agency TUNNEL TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS AND NON-VOLATILE MEMORY THEREOF
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
US7411235B2 (en) 2004-06-16 2008-08-12 Kabushiki Kaisha Toshiba Spin transistor, programmable logic circuit, and magnetic memory
JP2006237304A (ja) * 2005-02-25 2006-09-07 Osaka Industrial Promotion Organization 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ
EP1705665B1 (en) * 2005-03-24 2008-04-02 Hitachi Ltd. Conduction control device
JP5030397B2 (ja) * 2005-06-24 2012-09-19 日本電信電話株式会社 スピントランジスタ
US7372674B2 (en) * 2005-07-22 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel transistor with high magnetocurrent and stronger pinning
US7646627B2 (en) 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4883982B2 (ja) 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
JP4693634B2 (ja) * 2006-01-17 2011-06-01 株式会社東芝 スピンｆｅｔ
JP2008047706A (ja) 2006-08-16 2008-02-28 Nec Lcd Technologies Ltd 半導体回路及びそれを用いた半導体装置
JP4455558B2 (ja) * 2006-09-08 2010-04-21 株式会社東芝 スピンｍｏｓｆｅｔ
JP5157268B2 (ja) * 2007-06-13 2013-03-06 株式会社日立製作所 スピン蓄積磁化反転型のメモリ素子及びスピンｒａｍ
KR100862216B1 (ko) * 2007-08-02 2008-10-09 한국과학기술원 커패시터리스 디램 특성과 저항변화물질에 의한 비휘발성메모리 특성을 갖는 비휘발성 디램
JP2009064826A (ja) 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
US7936028B2 (en) 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
US20090141409A1 (en) * 2007-12-03 2009-06-04 Santos Tiffany S Spin filter spintronic devices
US8659852B2 (en) * 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
RU2387047C1 (ru) * 2008-09-23 2010-04-20 Институт химии твердого тела Уральского отделения Российской Академии наук Спиновый транзистор
US8158964B2 (en) * 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
WO2011036770A1 (ja) 2009-09-25 2011-03-31 株式会社 東芝 メモリ機能付きパストランジスタ回路およびこのパストランジスタ回路を有するスイッチングボックス回路
FR2966636B1 (fr) * 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
JP5778945B2 (ja) * 2011-02-24 2015-09-16 株式会社東芝 連想メモリ
JP5225419B2 (ja) 2011-03-28 2013-07-03 株式会社東芝 スピンｍｏｓｆｅｔを用いたメモリ回路、メモリ機能付きパストランジスタ回路、スイッチングボックス回路、スイッチングブロック回路、およびフィールドプログラマブルゲートアレイ
KR101457511B1 (ko) * 2011-08-18 2014-11-04 코넬 유니버시티 스핀 홀 효과 자기 장치, 방법, 및 적용
JP5665711B2 (ja) * 2011-09-26 2015-02-04 株式会社東芝 スピントランジスタおよびメモリ
US9270277B2 (en) * 2012-06-28 2016-02-23 Northwestern University Emitter-coupled spin-transistor logic
CN104813478B (zh) 2012-11-08 2017-07-21 国立研究开发法人科学技术振兴机构 自旋阀元件
DE102013209278B4 (de) * 2013-05-17 2016-02-18 Helmholtz-Zentrum Dresden - Rossendorf E.V. Magnetisierbare Halbleiter mit permanenter Magnetisierung und deren Verwendung
CN105161613A (zh) * 2015-08-18 2015-12-16 北京航空航天大学 一种基于双势垒结构的磁存储器件
US9941469B2 (en) 2015-10-06 2018-04-10 International Business Machines Corporation Double spin filter tunnel junction
CN112924781B (zh) * 2021-01-26 2023-01-20 青岛海尔电冰箱有限公司 冰箱的智能检测设备
US12324197B2 (en) 2022-10-31 2025-06-03 International Business Machines Corporation Spin-based gate-all-around transistors

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