TWI310184B - Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors - Google Patents

Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors Download PDF

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Publication number
TWI310184B
TWI310184B TW092120200A TW92120200A TWI310184B TW I310184 B TWI310184 B TW I310184B TW 092120200 A TW092120200 A TW 092120200A TW 92120200 A TW92120200 A TW 92120200A TW I310184 B TWI310184 B TW I310184B
Authority
TW
Taiwan
Prior art keywords
spin
transistor
ferromagnetic
layer
wiring
Prior art date
Application number
TW092120200A
Other languages
English (en)
Chinese (zh)
Other versions
TW200405339A (en
Inventor
Sugahara Satoshi
Tanaka Masaaki
Original Assignee
Japan Science & Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science & Tech Corp filed Critical Japan Science & Tech Corp
Publication of TW200405339A publication Critical patent/TW200405339A/zh
Application granted granted Critical
Publication of TWI310184B publication Critical patent/TWI310184B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
TW092120200A 2002-07-25 2003-07-24 Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors TWI310184B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002217336 2002-07-25
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ

Publications (2)

Publication Number Publication Date
TW200405339A TW200405339A (en) 2004-04-01
TWI310184B true TWI310184B (en) 2009-05-21

Family

ID=31190300

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092120200A TWI310184B (en) 2002-07-25 2003-07-24 Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors

Country Status (8)

Country Link
US (4) US7423327B2 (enExample)
EP (1) EP1555694B1 (enExample)
JP (1) JP4477305B2 (enExample)
KR (1) KR100977829B1 (enExample)
CN (1) CN100470844C (enExample)
AU (1) AU2003252691A1 (enExample)
TW (1) TWI310184B (enExample)
WO (1) WO2004012272A1 (enExample)

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EP1610386A4 (en) * 2003-03-31 2009-04-01 Japan Science & Tech Agency TUNNEL TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS AND NON-VOLATILE MEMORY THEREOF
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
US7411235B2 (en) 2004-06-16 2008-08-12 Kabushiki Kaisha Toshiba Spin transistor, programmable logic circuit, and magnetic memory
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US7372674B2 (en) * 2005-07-22 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel transistor with high magnetocurrent and stronger pinning
US7646627B2 (en) 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4883982B2 (ja) 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
JP4693634B2 (ja) * 2006-01-17 2011-06-01 株式会社東芝 スピンｆｅｔ
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JP2009064826A (ja) 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
US7936028B2 (en) 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
US20090141409A1 (en) * 2007-12-03 2009-06-04 Santos Tiffany S Spin filter spintronic devices
US8659852B2 (en) * 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
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US8158964B2 (en) * 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
WO2011036770A1 (ja) 2009-09-25 2011-03-31 株式会社 東芝 メモリ機能付きパストランジスタ回路およびこのパストランジスタ回路を有するスイッチングボックス回路
FR2966636B1 (fr) * 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
JP5778945B2 (ja) * 2011-02-24 2015-09-16 株式会社東芝 連想メモリ
JP5225419B2 (ja) 2011-03-28 2013-07-03 株式会社東芝 スピンｍｏｓｆｅｔを用いたメモリ回路、メモリ機能付きパストランジスタ回路、スイッチングボックス回路、スイッチングブロック回路、およびフィールドプログラマブルゲートアレイ
KR101457511B1 (ko) * 2011-08-18 2014-11-04 코넬 유니버시티 스핀 홀 효과 자기 장치, 방법, 및 적용
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DE102013209278B4 (de) * 2013-05-17 2016-02-18 Helmholtz-Zentrum Dresden - Rossendorf E.V. Magnetisierbare Halbleiter mit permanenter Magnetisierung und deren Verwendung
CN105161613A (zh) * 2015-08-18 2015-12-16 北京航空航天大学 一种基于双势垒结构的磁存储器件
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CN112924781B (zh) * 2021-01-26 2023-01-20 青岛海尔电冰箱有限公司 冰箱的智能检测设备
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Also Published As

Publication number Publication date
US7671433B2 (en) 2010-03-02
WO2004012272A1 (ja) 2004-02-05
EP1555694A4 (en) 2008-06-04
US20080067501A1 (en) 2008-03-20
KR100977829B1 (ko) 2010-08-24
AU2003252691A1 (en) 2004-02-16
US7825485B2 (en) 2010-11-02
US7423327B2 (en) 2008-09-09
CN1685526A (zh) 2005-10-19
JP4477305B2 (ja) 2010-06-09
TW200405339A (en) 2004-04-01
US20080061336A1 (en) 2008-03-13
EP1555694A1 (en) 2005-07-20
KR20050025996A (ko) 2005-03-14
US8026563B2 (en) 2011-09-27
EP1555694B1 (en) 2012-02-29
JP2004111904A (ja) 2004-04-08
US20110031545A1 (en) 2011-02-10
US20060043443A1 (en) 2006-03-02
CN100470844C (zh) 2009-03-18

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