KR100977829B1 - 스핀 필터 효과를 이용한 스핀 트랜지스터 및 스핀트랜지스터를 이용한 비휘발성 메모리 - Google Patents

스핀 필터 효과를 이용한 스핀 트랜지스터 및 스핀트랜지스터를 이용한 비휘발성 메모리 Download PDF

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KR100977829B1
KR100977829B1 KR1020057001401A KR20057001401A KR100977829B1 KR 100977829 B1 KR100977829 B1 KR 100977829B1 KR 1020057001401 A KR1020057001401 A KR 1020057001401A KR 20057001401 A KR20057001401 A KR 20057001401A KR 100977829 B1 KR100977829 B1 KR 100977829B1
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spin
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transistor
electrode layer
band
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KR20050025996A (ko
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스가하라사토시
다나카마사아키
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도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
KR1020057001401A 2002-07-25 2003-07-25 스핀 필터 효과를 이용한 스핀 트랜지스터 및 스핀트랜지스터를 이용한 비휘발성 메모리 Expired - Fee Related KR100977829B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00217336 2002-07-25
JP2002217336 2002-07-25
JP2003086145A JP4477305B2 (ja) 2002-07-25 2003-03-26 スピントランジスタ及びそれを用いた不揮発性メモリ
JPJP-P-2003-00086145 2003-03-26

Publications (2)

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KR20050025996A KR20050025996A (ko) 2005-03-14
KR100977829B1 true KR100977829B1 (ko) 2010-08-24

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US (4) US7423327B2 (enExample)
EP (1) EP1555694B1 (enExample)
JP (1) JP4477305B2 (enExample)
KR (1) KR100977829B1 (enExample)
CN (1) CN100470844C (enExample)
AU (1) AU2003252691A1 (enExample)
TW (1) TWI310184B (enExample)
WO (1) WO2004012272A1 (enExample)

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KR100681379B1 (ko) 2003-03-07 2007-02-12 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 의존 전달 특성을 갖는 전계 효과 트랜지스터 및그것을 이용한 비휘발성 메모리
JP4212397B2 (ja) 2003-03-28 2009-01-21 株式会社東芝 磁気メモリ及びその書き込み方法
EP1610386A4 (en) * 2003-03-31 2009-04-01 Japan Science & Tech Agency TUNNEL TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS AND NON-VOLATILE MEMORY THEREOF
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
US7411235B2 (en) 2004-06-16 2008-08-12 Kabushiki Kaisha Toshiba Spin transistor, programmable logic circuit, and magnetic memory
JP2006237304A (ja) * 2005-02-25 2006-09-07 Osaka Industrial Promotion Organization 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ
EP1705665B1 (en) * 2005-03-24 2008-04-02 Hitachi Ltd. Conduction control device
JP5030397B2 (ja) * 2005-06-24 2012-09-19 日本電信電話株式会社 スピントランジスタ
US7372674B2 (en) * 2005-07-22 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel transistor with high magnetocurrent and stronger pinning
US7646627B2 (en) 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
JP4883982B2 (ja) 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
JP4693634B2 (ja) * 2006-01-17 2011-06-01 株式会社東芝 スピンｆｅｔ
JP2008047706A (ja) 2006-08-16 2008-02-28 Nec Lcd Technologies Ltd 半導体回路及びそれを用いた半導体装置
JP4455558B2 (ja) * 2006-09-08 2010-04-21 株式会社東芝 スピンｍｏｓｆｅｔ
JP5157268B2 (ja) * 2007-06-13 2013-03-06 株式会社日立製作所 スピン蓄積磁化反転型のメモリ素子及びスピンｒａｍ
KR100862216B1 (ko) * 2007-08-02 2008-10-09 한국과학기술원 커패시터리스 디램 특성과 저항변화물질에 의한 비휘발성메모리 특성을 갖는 비휘발성 디램
JP2009064826A (ja) 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
US7936028B2 (en) 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
US20090141409A1 (en) * 2007-12-03 2009-06-04 Santos Tiffany S Spin filter spintronic devices
US8659852B2 (en) * 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
RU2387047C1 (ru) * 2008-09-23 2010-04-20 Институт химии твердого тела Уральского отделения Российской Академии наук Спиновый транзистор
US8158964B2 (en) * 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
WO2011036770A1 (ja) 2009-09-25 2011-03-31 株式会社 東芝 メモリ機能付きパストランジスタ回路およびこのパストランジスタ回路を有するスイッチングボックス回路
FR2966636B1 (fr) * 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
JP5778945B2 (ja) * 2011-02-24 2015-09-16 株式会社東芝 連想メモリ
JP5225419B2 (ja) 2011-03-28 2013-07-03 株式会社東芝 スピンｍｏｓｆｅｔを用いたメモリ回路、メモリ機能付きパストランジスタ回路、スイッチングボックス回路、スイッチングブロック回路、およびフィールドプログラマブルゲートアレイ
KR101457511B1 (ko) * 2011-08-18 2014-11-04 코넬 유니버시티 스핀 홀 효과 자기 장치, 방법, 및 적용
JP5665711B2 (ja) * 2011-09-26 2015-02-04 株式会社東芝 スピントランジスタおよびメモリ
US9270277B2 (en) * 2012-06-28 2016-02-23 Northwestern University Emitter-coupled spin-transistor logic
CN104813478B (zh) 2012-11-08 2017-07-21 国立研究开发法人科学技术振兴机构 自旋阀元件
DE102013209278B4 (de) * 2013-05-17 2016-02-18 Helmholtz-Zentrum Dresden - Rossendorf E.V. Magnetisierbare Halbleiter mit permanenter Magnetisierung und deren Verwendung
CN105161613A (zh) * 2015-08-18 2015-12-16 北京航空航天大学 一种基于双势垒结构的磁存储器件
US9941469B2 (en) 2015-10-06 2018-04-10 International Business Machines Corporation Double spin filter tunnel junction
CN112924781B (zh) * 2021-01-26 2023-01-20 青岛海尔电冰箱有限公司 冰箱的智能检测设备
US12324197B2 (en) 2022-10-31 2025-06-03 International Business Machines Corporation Spin-based gate-all-around transistors

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US7671433B2 (en) 2010-03-02
WO2004012272A1 (ja) 2004-02-05
EP1555694A4 (en) 2008-06-04
US20080067501A1 (en) 2008-03-20
AU2003252691A1 (en) 2004-02-16
US7825485B2 (en) 2010-11-02
US7423327B2 (en) 2008-09-09
CN1685526A (zh) 2005-10-19
JP4477305B2 (ja) 2010-06-09
TW200405339A (en) 2004-04-01
TWI310184B (en) 2009-05-21
US20080061336A1 (en) 2008-03-13
EP1555694A1 (en) 2005-07-20
KR20050025996A (ko) 2005-03-14
US8026563B2 (en) 2011-09-27
EP1555694B1 (en) 2012-02-29
JP2004111904A (ja) 2004-04-08
US20110031545A1 (en) 2011-02-10
US20060043443A1 (en) 2006-03-02
CN100470844C (zh) 2009-03-18

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