JP4475209B2 - 蒸着用酸化物燒結体タブレット - Google Patents

蒸着用酸化物燒結体タブレット Download PDF

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Publication number
JP4475209B2
JP4475209B2 JP2005275330A JP2005275330A JP4475209B2 JP 4475209 B2 JP4475209 B2 JP 4475209B2 JP 2005275330 A JP2005275330 A JP 2005275330A JP 2005275330 A JP2005275330 A JP 2005275330A JP 4475209 B2 JP4475209 B2 JP 4475209B2
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JP
Japan
Prior art keywords
tablet
vapor deposition
oxide
film
examples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005275330A
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English (en)
Japanese (ja)
Other versions
JP2007084881A (ja
Inventor
徳行 中山
能之 阿部
剛 小原
理一郎 和気
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2005275330A priority Critical patent/JP4475209B2/ja
Priority to TW095134374A priority patent/TW200722541A/zh
Priority to KR1020060092509A priority patent/KR100839638B1/ko
Publication of JP2007084881A publication Critical patent/JP2007084881A/ja
Application granted granted Critical
Publication of JP4475209B2 publication Critical patent/JP4475209B2/ja
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2005275330A 2005-09-22 2005-09-22 蒸着用酸化物燒結体タブレット Expired - Fee Related JP4475209B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005275330A JP4475209B2 (ja) 2005-09-22 2005-09-22 蒸着用酸化物燒結体タブレット
TW095134374A TW200722541A (en) 2005-09-22 2006-09-15 Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive film
KR1020060092509A KR100839638B1 (ko) 2005-09-22 2006-09-22 증착용 산화물 소결체 타블렛 및 산화물 투명도전막

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005275330A JP4475209B2 (ja) 2005-09-22 2005-09-22 蒸着用酸化物燒結体タブレット

Publications (2)

Publication Number Publication Date
JP2007084881A JP2007084881A (ja) 2007-04-05
JP4475209B2 true JP4475209B2 (ja) 2010-06-09

Family

ID=37972160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005275330A Expired - Fee Related JP4475209B2 (ja) 2005-09-22 2005-09-22 蒸着用酸化物燒結体タブレット

Country Status (3)

Country Link
JP (1) JP4475209B2 (ko)
KR (1) KR100839638B1 (ko)
TW (1) TW200722541A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5655306B2 (ja) * 2007-07-06 2015-01-21 住友金属鉱山株式会社 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材
JP5257372B2 (ja) * 2009-11-30 2013-08-07 住友金属鉱山株式会社 酸化物蒸着材と透明導電膜および太陽電池
JP5224073B2 (ja) * 2010-03-26 2013-07-03 住友金属鉱山株式会社 酸化物蒸着材とその製造方法
JP2014095120A (ja) * 2012-11-09 2014-05-22 Ube Material Industries Ltd ＺｎＯ蒸着材及びそれを用いた透明導電膜
KR20140129770A (ko) 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
KR102152147B1 (ko) * 2013-07-26 2020-09-04 주식회사 선익시스템 증발유닛 및 이를 구비한 증착장치
CN109131198A (zh) * 2018-10-29 2019-01-04 湖北航天化学技术研究所 一种气囊用气体发生剂药片及其制备工艺和气体发生器系统
CN109646987B (zh) * 2019-01-10 2024-03-26 合肥百思智能装备有限公司 一种连续进出料高真空有机小分子提纯专用设备
KR20240105115A (ko) 2022-12-28 2024-07-05 한국세라믹기술원 혼합 또는 다층 코팅용 전자빔-물리적기상증착 잉곳 및 그 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08104978A (ja) * 1994-10-06 1996-04-23 Sumitomo Metal Mining Co Ltd Ｉｔｏ蒸着材およびその製造方法

Also Published As

Publication number Publication date
KR100839638B1 (ko) 2008-06-19
TW200722541A (en) 2007-06-16
TWI340175B (ko) 2011-04-11
KR20070033943A (ko) 2007-03-27
JP2007084881A (ja) 2007-04-05

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