TW200722541A - Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive film - Google Patents
Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive filmInfo
- Publication number
- TW200722541A TW200722541A TW095134374A TW95134374A TW200722541A TW 200722541 A TW200722541 A TW 200722541A TW 095134374 A TW095134374 A TW 095134374A TW 95134374 A TW95134374 A TW 95134374A TW 200722541 A TW200722541 A TW 200722541A
- Authority
- TW
- Taiwan
- Prior art keywords
- vapor deposition
- sintered body
- tablets
- oxide sintered
- feed system
- Prior art date
Links
- 238000007740 vapor deposition Methods 0.000 title abstract 9
- 238000000034 method Methods 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005275330A JP4475209B2 (ja) | 2005-09-22 | 2005-09-22 | 蒸着用酸化物燒結体タブレット |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200722541A true TW200722541A (en) | 2007-06-16 |
TWI340175B TWI340175B (ko) | 2011-04-11 |
Family
ID=37972160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095134374A TW200722541A (en) | 2005-09-22 | 2006-09-15 | Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive film |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4475209B2 (ko) |
KR (1) | KR100839638B1 (ko) |
TW (1) | TW200722541A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422696B (zh) * | 2010-03-26 | 2014-01-11 | Sumitomo Metal Mining Co | 氧化物蒸鍍材與透明導電膜 |
CN104131255A (zh) * | 2013-04-30 | 2014-11-05 | 三星显示有限公司 | 用于等离子体涂布系统的料片、制造方法及制造薄膜的方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5655306B2 (ja) * | 2007-07-06 | 2015-01-21 | 住友金属鉱山株式会社 | 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 |
JP5257372B2 (ja) * | 2009-11-30 | 2013-08-07 | 住友金属鉱山株式会社 | 酸化物蒸着材と透明導電膜および太陽電池 |
JP2014095120A (ja) * | 2012-11-09 | 2014-05-22 | Ube Material Industries Ltd | ZnO蒸着材及びそれを用いた透明導電膜 |
KR102152147B1 (ko) * | 2013-07-26 | 2020-09-04 | 주식회사 선익시스템 | 증발유닛 및 이를 구비한 증착장치 |
CN109131198A (zh) * | 2018-10-29 | 2019-01-04 | 湖北航天化学技术研究所 | 一种气囊用气体发生剂药片及其制备工艺和气体发生器系统 |
CN109646987B (zh) * | 2019-01-10 | 2024-03-26 | 合肥百思智能装备有限公司 | 一种连续进出料高真空有机小分子提纯专用设备 |
KR20240105115A (ko) | 2022-12-28 | 2024-07-05 | 한국세라믹기술원 | 혼합 또는 다층 코팅용 전자빔-물리적기상증착 잉곳 및 그 제조 방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08104978A (ja) * | 1994-10-06 | 1996-04-23 | Sumitomo Metal Mining Co Ltd | Ito蒸着材およびその製造方法 |
-
2005
- 2005-09-22 JP JP2005275330A patent/JP4475209B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-15 TW TW095134374A patent/TW200722541A/zh not_active IP Right Cessation
- 2006-09-22 KR KR1020060092509A patent/KR100839638B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422696B (zh) * | 2010-03-26 | 2014-01-11 | Sumitomo Metal Mining Co | 氧化物蒸鍍材與透明導電膜 |
CN104131255A (zh) * | 2013-04-30 | 2014-11-05 | 三星显示有限公司 | 用于等离子体涂布系统的料片、制造方法及制造薄膜的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4475209B2 (ja) | 2010-06-09 |
KR100839638B1 (ko) | 2008-06-19 |
TWI340175B (ko) | 2011-04-11 |
KR20070033943A (ko) | 2007-03-27 |
JP2007084881A (ja) | 2007-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |