JP4472064B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4472064B2
JP4472064B2 JP24075899A JP24075899A JP4472064B2 JP 4472064 B2 JP4472064 B2 JP 4472064B2 JP 24075899 A JP24075899 A JP 24075899A JP 24075899 A JP24075899 A JP 24075899A JP 4472064 B2 JP4472064 B2 JP 4472064B2
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Japan
Prior art keywords
film
semiconductor
gate wiring
substrate
gate
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Expired - Fee Related
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JP24075899A
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English (en)
Japanese (ja)
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JP2000150906A5 (enExample
JP2000150906A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP24075899A priority Critical patent/JP4472064B2/ja
Publication of JP2000150906A publication Critical patent/JP2000150906A/ja
Publication of JP2000150906A5 publication Critical patent/JP2000150906A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP24075899A 1998-08-31 1999-08-27 半導体装置の製造方法 Expired - Fee Related JP4472064B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24075899A JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24543398 1998-08-31
JP10-245433 1998-08-31
JP24075899A JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000150906A JP2000150906A (ja) 2000-05-30
JP2000150906A5 JP2000150906A5 (enExample) 2006-10-05
JP4472064B2 true JP4472064B2 (ja) 2010-06-02

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Family Applications (1)

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JP24075899A Expired - Fee Related JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

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JP (1) JP4472064B2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4067819B2 (ja) * 2000-12-21 2008-03-26 株式会社半導体エネルギー研究所 発光装置
JP4741569B2 (ja) * 2000-12-21 2011-08-03 株式会社半導体エネルギー研究所 発光装置
JP4766758B2 (ja) * 2001-02-28 2011-09-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002289347A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置、その製造方法、被着マスク及びその製造方法
JP4731718B2 (ja) * 2001-04-27 2011-07-27 株式会社半導体エネルギー研究所 表示装置
KR20020091705A (ko) * 2001-05-31 2002-12-06 주식회사 현대 디스플레이 테크놀로지 박막 트랜지스터 액정표시소자의 제조방법
KR100720099B1 (ko) 2001-06-21 2007-05-18 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
JP2003068757A (ja) * 2001-08-30 2003-03-07 Sony Corp アクティブマトリクス基板及びその製造方法
US7223641B2 (en) 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
US7491590B2 (en) 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
JP2006215086A (ja) * 2005-02-01 2006-08-17 Sharp Corp アクティブマトリクス基板およびそれを備えた表示装置
KR100712295B1 (ko) * 2005-06-22 2007-04-27 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
JP4964442B2 (ja) * 2005-08-10 2012-06-27 三菱電機株式会社 薄膜トランジスタおよびその製造方法
TWI411095B (zh) 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
JP4659925B2 (ja) * 2008-08-04 2011-03-30 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011176153A (ja) * 2010-02-25 2011-09-08 Dainippon Printing Co Ltd 薄膜トランジスタ基板
US9123691B2 (en) 2012-01-19 2015-09-01 E Ink Holdings Inc. Thin-film transistor and method for manufacturing the same
TWI467774B (zh) * 2012-01-19 2015-01-01 E Ink Holdings Inc 薄膜電晶體結構及其製造方法
JP2013250319A (ja) * 2012-05-30 2013-12-12 Sharp Corp アクティブマトリクス基板、製造方法、及び表示装置
JP2017136724A (ja) * 2016-02-02 2017-08-10 東芝テック株式会社 インクジェットヘッド
KR102675575B1 (ko) * 2016-12-12 2024-06-18 삼성디스플레이 주식회사 표시 장치
JP6853770B2 (ja) * 2017-11-30 2021-03-31 株式会社Ｊｏｌｅｄ 半導体装置および表示装置

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