JP2000150906A5 - - Google Patents

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Publication number
JP2000150906A5
JP2000150906A5 JP1999240758A JP24075899A JP2000150906A5 JP 2000150906 A5 JP2000150906 A5 JP 2000150906A5 JP 1999240758 A JP1999240758 A JP 1999240758A JP 24075899 A JP24075899 A JP 24075899A JP 2000150906 A5 JP2000150906 A5 JP 2000150906A5
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JP
Japan
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film
semiconductor
insulating
forming
gate
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JP1999240758A
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English (en)
Japanese (ja)
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JP2000150906A (ja
JP4472064B2 (ja
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Priority to JP24075899A priority Critical patent/JP4472064B2/ja
Priority claimed from JP24075899A external-priority patent/JP4472064B2/ja
Publication of JP2000150906A publication Critical patent/JP2000150906A/ja
Publication of JP2000150906A5 publication Critical patent/JP2000150906A5/ja
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Publication of JP4472064B2 publication Critical patent/JP4472064B2/ja
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JP24075899A 1998-08-31 1999-08-27 半導体装置の製造方法 Expired - Fee Related JP4472064B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24075899A JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24543398 1998-08-31
JP10-245433 1998-08-31
JP24075899A JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000150906A JP2000150906A (ja) 2000-05-30
JP2000150906A5 true JP2000150906A5 (enExample) 2006-10-05
JP4472064B2 JP4472064B2 (ja) 2010-06-02

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JP24075899A Expired - Fee Related JP4472064B2 (ja) 1998-08-31 1999-08-27 半導体装置の製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8013346B2 (en) 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4067819B2 (ja) * 2000-12-21 2008-03-26 株式会社半導体エネルギー研究所 発光装置
JP4741569B2 (ja) * 2000-12-21 2011-08-03 株式会社半導体エネルギー研究所 発光装置
JP4766758B2 (ja) * 2001-02-28 2011-09-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002289347A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置、その製造方法、被着マスク及びその製造方法
JP4731718B2 (ja) * 2001-04-27 2011-07-27 株式会社半導体エネルギー研究所 表示装置
KR20020091705A (ko) * 2001-05-31 2002-12-06 주식회사 현대 디스플레이 테크놀로지 박막 트랜지스터 액정표시소자의 제조방법
KR100720099B1 (ko) 2001-06-21 2007-05-18 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
JP2003068757A (ja) * 2001-08-30 2003-03-07 Sony Corp アクティブマトリクス基板及びその製造方法
US7223641B2 (en) 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
US7491590B2 (en) 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
JP2006215086A (ja) * 2005-02-01 2006-08-17 Sharp Corp アクティブマトリクス基板およびそれを備えた表示装置
KR100712295B1 (ko) * 2005-06-22 2007-04-27 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
JP4964442B2 (ja) * 2005-08-10 2012-06-27 三菱電機株式会社 薄膜トランジスタおよびその製造方法
TWI411095B (zh) 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
JP4659925B2 (ja) * 2008-08-04 2011-03-30 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011176153A (ja) * 2010-02-25 2011-09-08 Dainippon Printing Co Ltd 薄膜トランジスタ基板
US9123691B2 (en) 2012-01-19 2015-09-01 E Ink Holdings Inc. Thin-film transistor and method for manufacturing the same
TWI467774B (zh) * 2012-01-19 2015-01-01 E Ink Holdings Inc 薄膜電晶體結構及其製造方法
JP2013250319A (ja) * 2012-05-30 2013-12-12 Sharp Corp アクティブマトリクス基板、製造方法、及び表示装置
JP2017136724A (ja) * 2016-02-02 2017-08-10 東芝テック株式会社 インクジェットヘッド
KR102675575B1 (ko) * 2016-12-12 2024-06-18 삼성디스플레이 주식회사 표시 장치
JP6853770B2 (ja) * 2017-11-30 2021-03-31 株式会社Ｊｏｌｅｄ 半導体装置および表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8013346B2 (en) 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same

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