JP4451934B2 - 導電層をエッチングする方法及び集積回路 - Google Patents

導電層をエッチングする方法及び集積回路 Download PDF

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Publication number
JP4451934B2
JP4451934B2 JP54071698A JP54071698A JP4451934B2 JP 4451934 B2 JP4451934 B2 JP 4451934B2 JP 54071698 A JP54071698 A JP 54071698A JP 54071698 A JP54071698 A JP 54071698A JP 4451934 B2 JP4451934 B2 JP 4451934B2
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Japan
Prior art keywords
conductive
etch
layer
etching
conductive layer
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JP54071698A
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Japanese (ja)
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JP2001517367A (ja
JP2001517367A5 (https=
Inventor
アーネット・デビッド・アール．
ムッサー・ジェフリー・ブイ．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP54071698A 1997-03-19 1998-03-17 導電層をエッチングする方法及び集積回路 Expired - Lifetime JP4451934B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/820,533 1997-03-19
US08/820,533 US5849641A (en) 1997-03-19 1997-03-19 Methods and apparatus for etching a conductive layer to improve yield
PCT/US1998/005202 WO1998042020A1 (en) 1997-03-19 1998-03-17 Method for etching a conductive layer

Publications (3)

Publication Number Publication Date
JP2001517367A JP2001517367A (ja) 2001-10-02
JP2001517367A5 JP2001517367A5 (https=) 2005-11-10
JP4451934B2 true JP4451934B2 (ja) 2010-04-14

Family

ID=25231067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54071698A Expired - Lifetime JP4451934B2 (ja) 1997-03-19 1998-03-17 導電層をエッチングする方法及び集積回路

Country Status (8)

Country Link
US (1) US5849641A (https=)
EP (1) EP1010203B1 (https=)
JP (1) JP4451934B2 (https=)
KR (1) KR100493486B1 (https=)
AT (1) ATE252275T1 (https=)
DE (1) DE69819023T2 (https=)
TW (1) TW468226B (https=)
WO (1) WO1998042020A1 (https=)

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* Cited by examiner, † Cited by third party
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US6159861A (en) * 1997-08-28 2000-12-12 Nec Corporation Method of manufacturing semiconductor device
KR100257080B1 (ko) * 1997-09-26 2000-05-15 김영환 반도체소자의제조방법
US6077762A (en) * 1997-12-22 2000-06-20 Vlsi Technology, Inc. Method and apparatus for rapidly discharging plasma etched interconnect structures
JP3819576B2 (ja) * 1997-12-25 2006-09-13 沖電気工業株式会社 半導体装置及びその製造方法
US5939335A (en) * 1998-01-06 1999-08-17 International Business Machines Corporation Method for reducing stress in the metallization of an integrated circuit
US6106663A (en) * 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
US6248252B1 (en) * 1999-02-24 2001-06-19 Advanced Micro Devices, Inc. Method of fabricating sub-micron metal lines
TW573369B (en) * 1999-03-31 2004-01-21 Lam Res Corp Improved techniques for etching an aluminum neodymium-containing layer
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6387820B1 (en) * 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. BC13/AR chemistry for metal overetching on a high density plasma etcher
DE10149736C1 (de) * 2001-10-09 2003-04-17 Infineon Technologies Ag Verfahren zum Ätzen eines Metallschichtsystems
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
KR100831572B1 (ko) * 2005-12-29 2008-05-21 동부일렉트로닉스 주식회사 반도체 소자의 배선 형성방법
JP2007214171A (ja) * 2006-02-07 2007-08-23 Hitachi High-Technologies Corp エッチング処理方法
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
US8409937B2 (en) * 2011-01-07 2013-04-02 Eastman Kodak Company Producing transistor including multi-layer reentrant profile
CN106158724B (zh) * 2015-03-24 2019-03-12 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

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FR2312114A1 (fr) * 1975-05-22 1976-12-17 Ibm Attaque de materiaux par ions reactifs
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
EP0023429B1 (en) * 1979-07-31 1985-12-18 Fujitsu Limited Dry etching of metal film
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
JPS63238288A (ja) * 1987-03-27 1988-10-04 Fujitsu Ltd ドライエツチング方法
US4838992A (en) * 1987-05-27 1989-06-13 Northern Telecom Limited Method of etching aluminum alloys in semi-conductor wafers
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
NL8902744A (nl) * 1989-11-07 1991-06-03 Koninkl Philips Electronics Nv Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat.
DE3940083A1 (de) * 1989-12-04 1991-06-13 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnen in integrierten halbleiterschaltungen
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
JP3170791B2 (ja) * 1990-09-11 2001-05-28 ソニー株式会社 Ａｌ系材料膜のエッチング方法
US5211804A (en) * 1990-10-16 1993-05-18 Oki Electric Industry, Co., Ltd. Method for dry etching
US5185058A (en) * 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5126008A (en) * 1991-05-03 1992-06-30 Applied Materials, Inc. Corrosion-free aluminum etching process for fabricating an integrated circuit structure
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
DE4136178A1 (de) * 1991-11-02 1993-05-06 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen, De Schaltung zur kontinuierlichen zoom-einstellung der bildbreite in einem fernsehempfaenger
JPH06108272A (ja) * 1992-09-30 1994-04-19 Sumitomo Metal Ind Ltd プラズマエッチング方法
JP3449741B2 (ja) * 1992-11-26 2003-09-22 東京エレクトロン株式会社 プラズマエッチング方法
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
US5783101A (en) * 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma

Also Published As

Publication number Publication date
US5849641A (en) 1998-12-15
EP1010203B1 (en) 2003-10-15
KR20000076337A (ko) 2000-12-26
TW468226B (en) 2001-12-11
DE69819023T2 (de) 2004-04-22
EP1010203A1 (en) 2000-06-21
WO1998042020A1 (en) 1998-09-24
KR100493486B1 (ko) 2005-06-03
JP2001517367A (ja) 2001-10-02
DE69819023D1 (de) 2003-11-20
ATE252275T1 (de) 2003-11-15

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