JP4438385B2 - 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス - Google Patents

絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス Download PDF

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JP4438385B2
JP4438385B2 JP2003383517A JP2003383517A JP4438385B2 JP 4438385 B2 JP4438385 B2 JP 4438385B2 JP 2003383517 A JP2003383517 A JP 2003383517A JP 2003383517 A JP2003383517 A JP 2003383517A JP 4438385 B2 JP4438385 B2 JP 4438385B2
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butyl
atom
formula
general formula
insulating film
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JP2005051192A5 (https=
JP2005051192A (ja
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大治 原
圭介 吉田
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Tosoh Corp
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Tosoh Corp
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003383517A 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス Expired - Lifetime JP4438385B2 (ja)

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JP2003383517A JP4438385B2 (ja) 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス

Applications Claiming Priority (3)

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JP2002346226 2002-11-28
JP2003198654 2003-07-17
JP2003383517A JP4438385B2 (ja) 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス

Related Child Applications (1)

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JP2009120571A Division JP5003722B2 (ja) 2002-11-28 2009-05-19 有機シロキサン化合物

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JP2005051192A JP2005051192A (ja) 2005-02-24
JP2005051192A5 JP2005051192A5 (https=) 2006-08-10
JP4438385B2 true JP4438385B2 (ja) 2010-03-24

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Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053009A1 (ja) * 2003-11-28 2005-06-09 Nec Corporation 多孔質絶縁膜及びその製造方法並びに多孔質絶縁膜を用いた半導体装置
TW200527536A (en) 2004-02-13 2005-08-16 Matsushita Electric Industrial Co Ltd Method for forming organic/inorganic hybrid insulation film
JP2006024670A (ja) 2004-07-07 2006-01-26 Sony Corp 半導体装置の製造方法
WO2006109686A1 (ja) * 2005-04-08 2006-10-19 Taiyo Nippon Sanso Corporation 絶縁膜用材料およびその成膜方法
JP4656147B2 (ja) * 2005-09-13 2011-03-23 日本電気株式会社 多孔質絶縁膜の形成方法および半導体装置
JP5355892B2 (ja) * 2005-09-16 2013-11-27 ルネサスエレクトロニクス株式会社 配線構造並びに半導体装置及びその製造方法
JP4618086B2 (ja) * 2005-09-30 2011-01-26 東ソー株式会社 Ｓｉ含有膜及びその製造方法等
JP5093479B2 (ja) * 2005-11-24 2012-12-12 日本電気株式会社 多孔質絶縁膜の形成方法
JP2007221039A (ja) * 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
US7531458B2 (en) * 2006-07-31 2009-05-12 Rohm And Haas Electronics Materials Llp Organometallic compounds
WO2008020592A1 (en) 2006-08-15 2008-02-21 Jsr Corporation Film-forming material, silicon-containing insulating film and method for forming the same
WO2008029956A1 (fr) * 2006-09-08 2008-03-13 National Institute Of Advanced Industrial Science And Technology Dispositif de circuit intégré semiconducteur et procédé de formation de câble
CN101611043B (zh) 2007-02-14 2013-03-13 Jsr株式会社 含硅膜形成用材料、以及含硅绝缘膜及其形成方法
JP2008274365A (ja) * 2007-05-01 2008-11-13 Shin Etsu Chem Co Ltd Ｓｉ含有膜形成材料、Ｓｉ含有膜及びその製造方法、並びに半導体デバイス
JP5015705B2 (ja) * 2007-09-18 2012-08-29 ルネサスエレクトロニクス株式会社 層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置
JPWO2009051163A1 (ja) * 2007-10-17 2011-03-03 日本電気株式会社 半導体装置およびその製造方法
CN101939465A (zh) * 2008-03-26 2011-01-05 Jsr株式会社 化学气相沉积法用材料和含硅绝缘膜及其制造方法
JP2009277686A (ja) * 2008-05-12 2009-11-26 Taiyo Nippon Sanso Corp 絶縁膜の成膜方法および絶縁膜
EP2358344A2 (en) * 2008-12-18 2011-08-24 Momentive Performance Materials Inc. Composition comprising at least two different cycloalkylmethicones and use thereof
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP2011111635A (ja) * 2009-11-24 2011-06-09 Tosoh Corp 炭素含有酸化ケイ素膜からなる封止膜、及びその用途
JP6014971B2 (ja) 2010-06-18 2016-10-26 東ソー株式会社 典型金属含有ポリシロキサン組成物、その製造方法、およびその用途
JP5838744B2 (ja) * 2010-12-15 2016-01-06 東ソー株式会社 炭素含有酸化ケイ素膜、封止膜及びその用途
JP2011116758A (ja) * 2010-12-22 2011-06-16 Tosoh Corp 有機シラン化合物、その製法、それを含むＳｉ含有膜形成材料、および成膜方法
JP6007662B2 (ja) 2011-09-05 2016-10-12 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
JP6131575B2 (ja) * 2011-12-22 2017-05-24 東ソー株式会社 環状シロキサン化合物の製造方法およびジシロキサン化合物
KR20150034261A (ko) * 2012-07-17 2015-04-02 도요타지도샤가부시키가이샤 리튬 이차 전지 및 그 제조 방법
JP2015155521A (ja) * 2014-01-14 2015-08-27 東ソー株式会社 環状シロキサン組成物、その製造方法、及びその用途
JP6862049B2 (ja) * 2017-03-31 2021-04-21 東ソー株式会社 環状シロキサン化合物、その製造方法、それを用いてなる電気絶縁膜の製造法及び膜
CN117355632A (zh) * 2021-05-31 2024-01-05 东曹株式会社 平坦化膜的制造方法、平坦化膜用材料以及平坦化膜

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