JP4438024B2 - 半導体レーザ装置の検査方法 - Google Patents

半導体レーザ装置の検査方法 Download PDF

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Publication number
JP4438024B2
JP4438024B2 JP12261299A JP12261299A JP4438024B2 JP 4438024 B2 JP4438024 B2 JP 4438024B2 JP 12261299 A JP12261299 A JP 12261299A JP 12261299 A JP12261299 A JP 12261299A JP 4438024 B2 JP4438024 B2 JP 4438024B2
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JP
Japan
Prior art keywords
opening
electrode
electrode layer
laser diode
diode chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12261299A
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English (en)
Japanese (ja)
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JP2000315835A (ja
JP2000315835A5 (enExample
Inventor
重光 芝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP12261299A priority Critical patent/JP4438024B2/ja
Priority to US09/536,644 priority patent/US6553047B1/en
Publication of JP2000315835A publication Critical patent/JP2000315835A/ja
Publication of JP2000315835A5 publication Critical patent/JP2000315835A5/ja
Application granted granted Critical
Publication of JP4438024B2 publication Critical patent/JP4438024B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP12261299A 1999-04-28 1999-04-28 半導体レーザ装置の検査方法 Expired - Fee Related JP4438024B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12261299A JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法
US09/536,644 US6553047B1 (en) 1999-04-28 2000-03-28 Semiconductor laser device with an inspection window, and an inspection method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12261299A JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法

Publications (3)

Publication Number Publication Date
JP2000315835A JP2000315835A (ja) 2000-11-14
JP2000315835A5 JP2000315835A5 (enExample) 2009-09-10
JP4438024B2 true JP4438024B2 (ja) 2010-03-24

Family

ID=14840269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12261299A Expired - Fee Related JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法

Country Status (2)

Country Link
US (1) US6553047B1 (enExample)
JP (1) JP4438024B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119362143B (zh) * 2024-12-20 2025-04-11 苏州长光华芯光电技术股份有限公司 半导体发光结构及其制备方法和测试方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768672B2 (ja) * 1987-09-30 1998-06-25 株式会社日立製作所 面発光半導体レーザ
JPH11274566A (ja) * 1998-03-26 1999-10-08 Canon Inc 発光素子、その製造方法
JP3522114B2 (ja) * 1998-07-21 2004-04-26 株式会社村田製作所 半導体発光素子及びその製造方法、並びにＺｎＯ膜の形成方法

Also Published As

Publication number Publication date
JP2000315835A (ja) 2000-11-14
US6553047B1 (en) 2003-04-22

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