JP2000315835A5 - - Google Patents

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Publication number
JP2000315835A5
JP2000315835A5 JP1999122612A JP12261299A JP2000315835A5 JP 2000315835 A5 JP2000315835 A5 JP 2000315835A5 JP 1999122612 A JP1999122612 A JP 1999122612A JP 12261299 A JP12261299 A JP 12261299A JP 2000315835 A5 JP2000315835 A5 JP 2000315835A5
Authority
JP
Japan
Prior art keywords
opening
electrode layer
laser
light emitting
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999122612A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000315835A (ja
JP4438024B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP12261299A priority Critical patent/JP4438024B2/ja
Priority claimed from JP12261299A external-priority patent/JP4438024B2/ja
Priority to US09/536,644 priority patent/US6553047B1/en
Publication of JP2000315835A publication Critical patent/JP2000315835A/ja
Publication of JP2000315835A5 publication Critical patent/JP2000315835A5/ja
Application granted granted Critical
Publication of JP4438024B2 publication Critical patent/JP4438024B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP12261299A 1999-04-28 1999-04-28 半導体レーザ装置の検査方法 Expired - Fee Related JP4438024B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12261299A JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法
US09/536,644 US6553047B1 (en) 1999-04-28 2000-03-28 Semiconductor laser device with an inspection window, and an inspection method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12261299A JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法

Publications (3)

Publication Number Publication Date
JP2000315835A JP2000315835A (ja) 2000-11-14
JP2000315835A5 true JP2000315835A5 (enExample) 2009-09-10
JP4438024B2 JP4438024B2 (ja) 2010-03-24

Family

ID=14840269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12261299A Expired - Fee Related JP4438024B2 (ja) 1999-04-28 1999-04-28 半導体レーザ装置の検査方法

Country Status (2)

Country Link
US (1) US6553047B1 (enExample)
JP (1) JP4438024B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119362143B (zh) * 2024-12-20 2025-04-11 苏州长光华芯光电技术股份有限公司 半导体发光结构及其制备方法和测试方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768672B2 (ja) * 1987-09-30 1998-06-25 株式会社日立製作所 面発光半導体レーザ
JPH11274566A (ja) * 1998-03-26 1999-10-08 Canon Inc 発光素子、その製造方法
JP3522114B2 (ja) * 1998-07-21 2004-04-26 株式会社村田製作所 半導体発光素子及びその製造方法、並びにＺｎＯ膜の形成方法

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