ATE346377T1 - Rhodium-reiche sauerstoffbarrieren - Google Patents

Rhodium-reiche sauerstoffbarrieren

Info

Publication number
ATE346377T1
ATE346377T1 AT02742467T AT02742467T ATE346377T1 AT E346377 T1 ATE346377 T1 AT E346377T1 AT 02742467 T AT02742467 T AT 02742467T AT 02742467 T AT02742467 T AT 02742467T AT E346377 T1 ATE346377 T1 AT E346377T1
Authority
AT
Austria
Prior art keywords
rhodium
capacitor
rich oxygen
oxygen barriers
rich
Prior art date
Application number
AT02742467T
Other languages
English (en)
Inventor
Haining Yang
Dan Gealy
Gurtej S Sandhu
Howard Rhodes
Mark Visokay
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE346377T1 publication Critical patent/ATE346377T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wrappers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT02742467T 2001-02-20 2002-02-11 Rhodium-reiche sauerstoffbarrieren ATE346377T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/789,335 US6518610B2 (en) 2001-02-20 2001-02-20 Rhodium-rich oxygen barriers

Publications (1)

Publication Number Publication Date
ATE346377T1 true ATE346377T1 (de) 2006-12-15

Family

ID=25147325

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02742467T ATE346377T1 (de) 2001-02-20 2002-02-11 Rhodium-reiche sauerstoffbarrieren

Country Status (8)

Country Link
US (4) US6518610B2 (de)
EP (1) EP1368822B1 (de)
JP (1) JP4399521B2 (de)
KR (1) KR100610303B1 (de)
CN (1) CN100373543C (de)
AT (1) ATE346377T1 (de)
DE (1) DE60216241T2 (de)
WO (1) WO2002067302A2 (de)

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US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US20050035369A1 (en) * 2003-08-15 2005-02-17 Chun-Chieh Lin Structure and method of forming integrated circuits utilizing strained channel transistors
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7071052B2 (en) * 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
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US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
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US20050266632A1 (en) * 2004-05-26 2005-12-01 Yun-Hsiu Chen Integrated circuit with strained and non-strained transistors, and method of forming thereof
US20060151822A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan DRAM with high K dielectric storage capacitor and method of making the same
US7316962B2 (en) * 2005-01-07 2008-01-08 Infineon Technologies Ag High dielectric constant materials
US20060228855A1 (en) * 2005-03-29 2006-10-12 Intel Corporation Capacitor with co-planar electrodes
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
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US7405154B2 (en) * 2006-03-24 2008-07-29 International Business Machines Corporation Structure and method of forming electrodeposited contacts
US8558278B2 (en) * 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
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Also Published As

Publication number Publication date
DE60216241D1 (de) 2007-01-04
US6781175B2 (en) 2004-08-24
US20040212002A1 (en) 2004-10-28
WO2002067302A3 (en) 2003-10-16
JP2004532512A (ja) 2004-10-21
DE60216241T2 (de) 2007-04-19
US6740554B2 (en) 2004-05-25
WO2002067302A8 (en) 2004-06-03
EP1368822A2 (de) 2003-12-10
US20020113260A1 (en) 2002-08-22
CN100373543C (zh) 2008-03-05
WO2002067302A2 (en) 2002-08-29
US20030102501A1 (en) 2003-06-05
US7038263B2 (en) 2006-05-02
CN1518758A (zh) 2004-08-04
EP1368822B1 (de) 2006-11-22
US6518610B2 (en) 2003-02-11
US20020190303A1 (en) 2002-12-19
KR20030088433A (ko) 2003-11-19
KR100610303B1 (ko) 2006-08-09
JP4399521B2 (ja) 2010-01-20

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