JP4431502B2 - エピタキシによって半導体デバイスを形成する方法 - Google Patents

エピタキシによって半導体デバイスを形成する方法 Download PDF

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Publication number
JP4431502B2
JP4431502B2 JP2004564805A JP2004564805A JP4431502B2 JP 4431502 B2 JP4431502 B2 JP 4431502B2 JP 2004564805 A JP2004564805 A JP 2004564805A JP 2004564805 A JP2004564805 A JP 2004564805A JP 4431502 B2 JP4431502 B2 JP 4431502B2
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Japan
Prior art keywords
layer
semiconductor layer
single crystal
sacrificial layer
opening
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Expired - Fee Related
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JP2004564805A
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Japanese (ja)
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JP2006524138A5 (https=
JP2006524138A (ja
Inventor
ゴゴイ、ビシュヌ
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NXP USA Inc
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NXP USA Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
JP2004564805A 2002-12-23 2003-10-23 エピタキシによって半導体デバイスを形成する方法 Expired - Fee Related JP4431502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/328,922 US7122395B2 (en) 2002-12-23 2002-12-23 Method of forming semiconductor devices through epitaxy
PCT/US2003/033630 WO2004060792A2 (en) 2002-12-23 2003-10-23 Method of forming semiconductor devices through epitaxy

Publications (3)

Publication Number Publication Date
JP2006524138A JP2006524138A (ja) 2006-10-26
JP2006524138A5 JP2006524138A5 (https=) 2006-12-07
JP4431502B2 true JP4431502B2 (ja) 2010-03-17

Family

ID=32594621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004564805A Expired - Fee Related JP4431502B2 (ja) 2002-12-23 2003-10-23 エピタキシによって半導体デバイスを形成する方法

Country Status (7)

Country Link
US (1) US7122395B2 (https=)
EP (1) EP1578685A2 (https=)
JP (1) JP4431502B2 (https=)
KR (1) KR101031990B1 (https=)
CN (1) CN100440420C (https=)
AU (1) AU2003286625A1 (https=)
WO (1) WO2004060792A2 (https=)

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US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
WO2004081982A2 (en) 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US6952041B2 (en) * 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
KR100605368B1 (ko) 2004-10-20 2006-07-28 삼성전자주식회사 Ｓｏｉ기판, 그 제조방법, 그리고, 그 ｓｏｉ기판을이용한 부유 구조체 제조 방법
US20060278942A1 (en) * 2005-06-14 2006-12-14 Innovative Micro Technology Antistiction MEMS substrate and method of manufacture
KR20080031846A (ko) * 2005-06-27 2008-04-11 도오레 화인케미칼 가부시키가이샤 경화형 조성물
US20070170528A1 (en) 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US7468327B2 (en) * 2006-06-13 2008-12-23 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating a micromechanical structure
US7485524B2 (en) * 2006-06-21 2009-02-03 International Business Machines Corporation MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
DE102006049886B4 (de) * 2006-10-23 2014-10-16 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer schwingfähigen mikromechanischen Struktur, Sensorbauelement und Verfahren zur Herstellung eines Bauelements
US7919006B2 (en) * 2007-10-31 2011-04-05 Freescale Semiconductor, Inc. Method of anti-stiction dimple formation under MEMS
US7579202B2 (en) * 2007-12-21 2009-08-25 Tekcore Co., Ltd. Method for fabricating light emitting diode element
ITTO20090616A1 (it) * 2009-08-05 2011-02-06 St Microelectronics Srl Procedimento di fabbricazione di dispositivi mems dotati di cavita' sepolte e dispositivo mems cosi' ottenuto
FR2954505B1 (fr) * 2009-12-22 2012-08-03 Commissariat Energie Atomique Structure micromecanique comportant une partie mobile presentant des butees pour des deplacements hors plan de la structure et son procede de realisation
US9023729B2 (en) * 2011-12-23 2015-05-05 Athenaeum, Llc Epitaxy level packaging
CN103681233B (zh) * 2012-09-05 2016-06-15 无锡华润上华半导体有限公司 一种多沟槽结构的制作方法
US10132630B2 (en) 2013-01-25 2018-11-20 MCube Inc. Multi-axis integrated MEMS inertial sensing device on single packaged chip
US10036635B2 (en) 2013-01-25 2018-07-31 MCube Inc. Multi-axis MEMS rate sensor device
US9249012B2 (en) 2013-01-25 2016-02-02 Mcube, Inc. Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures
US10046964B2 (en) 2013-03-07 2018-08-14 MCube Inc. MEMS structure with improved shielding and method
US9090452B2 (en) * 2013-12-06 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanism for forming MEMS device
US10522388B1 (en) 2018-08-24 2019-12-31 Tower Semiconductor Ltd. Method of forming high-voltage silicon-on-insulator device with diode connection to handle layer
US20250033951A1 (en) * 2023-07-28 2025-01-30 Lawrence Semiconductor Research Laboratory, Inc. Anchor structure

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JPH0478123A (ja) * 1990-07-20 1992-03-12 Fujitsu Ltd 半導体装置の製造方法
DE4122435A1 (de) * 1991-07-06 1993-01-07 Bosch Gmbh Robert Verfahren zur herstellung von beschleunigungssensoren und beschleunigungssensor
US5258097A (en) * 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE4315012B4 (de) * 1993-05-06 2007-01-11 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren und Sensor
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
US5510156A (en) * 1994-08-23 1996-04-23 Analog Devices, Inc. Micromechanical structure with textured surface and method for making same
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FR2732467B1 (fr) * 1995-02-10 1999-09-17 Bosch Gmbh Robert Capteur d'acceleration et procede de fabrication d'un tel capteur
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
DE19526691A1 (de) * 1995-07-21 1997-01-23 Bosch Gmbh Robert Verfahren zur Herstellung von Beschleunigungssensoren
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JP3430771B2 (ja) * 1996-02-05 2003-07-28 株式会社デンソー 半導体力学量センサの製造方法
US6228691B1 (en) * 1999-06-30 2001-05-08 Intel Corp. Silicon-on-insulator devices and method for producing the same
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US6413793B1 (en) * 2001-05-17 2002-07-02 Xerox Corporation Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers

Also Published As

Publication number Publication date
KR101031990B1 (ko) 2011-05-02
WO2004060792A2 (en) 2004-07-22
CN100440420C (zh) 2008-12-03
KR20050085889A (ko) 2005-08-29
CN1732123A (zh) 2006-02-08
AU2003286625A1 (en) 2004-07-29
US20040121564A1 (en) 2004-06-24
US7122395B2 (en) 2006-10-17
JP2006524138A (ja) 2006-10-26
WO2004060792A3 (en) 2004-10-21
EP1578685A2 (en) 2005-09-28

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