JP4430253B2 - ガス分配プレートを備えたチャンバ及び装置とガス分配プレートの熱応力を最小限にする方法 - Google Patents

ガス分配プレートを備えたチャンバ及び装置とガス分配プレートの熱応力を最小限にする方法 Download PDF

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Publication number
JP4430253B2
JP4430253B2 JP2001013825A JP2001013825A JP4430253B2 JP 4430253 B2 JP4430253 B2 JP 4430253B2 JP 2001013825 A JP2001013825 A JP 2001013825A JP 2001013825 A JP2001013825 A JP 2001013825A JP 4430253 B2 JP4430253 B2 JP 4430253B2
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Prior art keywords
distribution plate
gas distribution
chamber
side wall
flexible
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Japanese (ja)
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JP2001284271A (ja
JP2001284271A5 (https=
Inventor
エム． ホワイト ジョン
ケラー アーンスト
ティ． ブロニガン ウェンデル
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49428—Gas and water specific plumbing component making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
JP2001013825A 2000-01-20 2001-01-22 ガス分配プレートを備えたチャンバ及び装置とガス分配プレートの熱応力を最小限にする方法 Expired - Lifetime JP4430253B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/488612 2000-01-20
US09/488,612 US6477980B1 (en) 2000-01-20 2000-01-20 Flexibly suspended gas distribution manifold for plasma chamber

Publications (3)

Publication Number Publication Date
JP2001284271A JP2001284271A (ja) 2001-10-12
JP2001284271A5 JP2001284271A5 (https=) 2006-03-09
JP4430253B2 true JP4430253B2 (ja) 2010-03-10

Family

ID=23940398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001013825A Expired - Lifetime JP4430253B2 (ja) 2000-01-20 2001-01-22 ガス分配プレートを備えたチャンバ及び装置とガス分配プレートの熱応力を最小限にする方法

Country Status (7)

Country Link
US (3) US6477980B1 (https=)
EP (1) EP1118693B1 (https=)
JP (1) JP4430253B2 (https=)
KR (7) KR100737228B1 (https=)
DE (1) DE60125608T2 (https=)
SG (1) SG87200A1 (https=)
TW (1) TW477830B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210010350A (ko) * 2019-07-19 2021-01-27 도쿄엘렉트론가부시키가이샤 제 1 도전성 부재와 제 2 도전성 부재의 접합 구조체와 접합 방법 및 기판 처리 장치
KR20210090261A (ko) 2019-01-07 2021-07-19 가부시키가이샤 아루박 진공 처리 장치, 진공 처리 장치의 클리닝 방법

Families Citing this family (309)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
DE10041698A1 (de) * 2000-08-24 2002-03-14 Infineon Technologies Ag Verfahren zur Herstellung einer ferroelektrischen Festkörperschicht unter Verwendung eines Hilfsstoffes
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
US20030087488A1 (en) * 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
TWI294155B (en) 2002-06-21 2008-03-01 Applied Materials Inc Transfer chamber for vacuum processing system
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
KR100490049B1 (ko) * 2003-04-14 2005-05-17 삼성전자주식회사 일체형 디퓨저 프레임을 가지는 ｃｖｄ 장치
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
KR100965758B1 (ko) * 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US20050050708A1 (en) * 2003-09-04 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded fastener apparatus and method for preventing particle contamination
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
WO2005103874A2 (en) * 2004-04-16 2005-11-03 Cascade Basic Research Corp. Modelling relationships within an on-line connectivity universe
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US20060011582A1 (en) * 2004-07-14 2006-01-19 Savas Stephen E Fast isotropic etching system and process for large, non-circular substrates
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
TWI287279B (en) * 2004-09-20 2007-09-21 Applied Materials Inc Diffuser gravity support
US7387811B2 (en) * 2004-09-21 2008-06-17 Superpower, Inc. Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD)
US7584714B2 (en) * 2004-09-30 2009-09-08 Tokyo Electron Limited Method and system for improving coupling between a surface wave plasma source and a plasma space
US20060075970A1 (en) * 2004-10-13 2006-04-13 Guenther Rolf A Heated substrate support and method of fabricating same
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
KR20060076714A (ko) * 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
KR100634451B1 (ko) * 2005-01-10 2006-10-16 삼성전자주식회사 반도체 소자 제조 장치
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US20060213617A1 (en) * 2005-03-25 2006-09-28 Fink Steven T Load bearing insulator in vacuum etch chambers
US20060228490A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems
KR100629358B1 (ko) * 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US20070021935A1 (en) * 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber
TWI295816B (en) 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
JP2007042744A (ja) * 2005-08-01 2007-02-15 Sharp Corp プラズマ処理装置
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US20070044714A1 (en) * 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
JP5044931B2 (ja) * 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
US20070116873A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070138134A1 (en) * 2005-12-19 2007-06-21 Chuan-Han Hsieh Etching apparatus and etching method
US8216374B2 (en) 2005-12-22 2012-07-10 Applied Materials, Inc. Gas coupler for substrate processing chamber
US20070163716A1 (en) * 2006-01-19 2007-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gas distribution apparatuses and methods for controlling gas distribution apparatuses
KR100738876B1 (ko) * 2006-02-21 2007-07-12 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
US7794546B2 (en) * 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
KR100711184B1 (ko) * 2006-03-27 2007-04-24 주식회사 마이크로텍 샤워헤드 브래킷
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US20070254112A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
JP4800845B2 (ja) * 2006-05-30 2011-10-26 積水化学工業株式会社 プラズマ処理装置
WO2008039845A2 (en) 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
CN104073778B (zh) * 2006-10-24 2017-08-25 应用材料公司 用于原子层沉积的涡流室盖
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
CN101205605B (zh) * 2006-12-18 2012-01-11 东京毅力科创株式会社 用于热增强和等离子体增强气相沉积的装置及操作方法
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US7988875B2 (en) * 2007-02-08 2011-08-02 Applied Materials, Inc. Differential etch rate control of layers deposited by chemical vapor deposition
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
DE102007022431A1 (de) * 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
KR20080100057A (ko) * 2007-05-11 2008-11-14 주성엔지니어링(주) 결정질 실리콘 태양전지의 제조방법과 그 제조장치 및시스템
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US20090071406A1 (en) * 2007-09-19 2009-03-19 Soo Young Choi Cooled backing plate
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
TWI488547B (zh) * 2007-12-25 2015-06-11 應用材料股份有限公司 電漿室裝置
US8298625B2 (en) * 2008-01-31 2012-10-30 Applied Materials, Inc. Multiple phase RF power for electrode of plasma chamber
JP5230225B2 (ja) * 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
US9484213B2 (en) 2008-03-06 2016-11-01 Tokyo Electron Limited Processing gas diffusing and supplying unit and substrate processing apparatus
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
JP5271586B2 (ja) * 2008-04-09 2013-08-21 東京エレクトロン株式会社 プラズマ処理容器およびプラズマ処理装置
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
KR101555955B1 (ko) 2008-06-19 2015-09-25 주성엔지니어링(주) 기판형 태양전지의 제조방법
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
KR100967612B1 (ko) * 2008-07-09 2010-07-05 주식회사 메카로닉스 삼중 샤워헤드 및 이를 포함하는 원자층 증착장치
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
WO2010024814A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
TWI475708B (zh) * 2008-09-01 2015-03-01 Applied Materials Inc 利用流量梯度設計以沉積均勻矽膜之方法與設備
WO2010051233A2 (en) * 2008-10-31 2010-05-06 Applied Materials, Inc. Adjustable gas distribution apparatus
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
US20100252047A1 (en) * 2009-04-03 2010-10-07 Kirk Seth M Remote fluorination of fibrous filter webs
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
KR101059064B1 (ko) 2009-06-08 2011-08-24 주식회사 테스 대면적 가스분사장치
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
KR200464037Y1 (ko) 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
US20110097489A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
CN102598876B (zh) * 2009-11-17 2018-05-04 应用材料公司 具有电极处rf匹配的大面积等离子体处理腔室
TWI417984B (zh) * 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
KR200457817Y1 (ko) * 2009-12-28 2012-01-05 주식회사 케이씨텍 원자층 증착장치의 샤워헤드 유닛
TWI369251B (en) * 2010-02-01 2012-08-01 Ind Tech Res Inst Gas distribution module and gas distribution scanning apparatus using the same
US9850576B2 (en) * 2010-02-15 2017-12-26 Applied Materials, Inc. Anti-arc zero field plate
CN102834930A (zh) 2010-03-30 2012-12-19 应用材料公司 在扩散p型区域上方形成负电荷钝化层的方法
CN102918180B (zh) 2010-05-21 2014-12-17 应用材料公司 大面积电极上的紧密安装的陶瓷绝缘体
JP5045786B2 (ja) * 2010-05-26 2012-10-10 東京エレクトロン株式会社 プラズマ処理装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8721791B2 (en) 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
EP2426737A1 (en) 2010-09-03 2012-03-07 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
KR101009506B1 (ko) * 2010-09-08 2011-01-18 주식회사 아키덤엔지니어링건축사사무소 전주용 완금밴드장치
EP2439792A1 (en) 2010-10-05 2012-04-11 Applied Materials, Inc. Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US8470127B2 (en) * 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
WO2012113441A1 (en) 2011-02-21 2012-08-30 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for a layer stack of a solar cell, and solar cell precursor
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
US20120231181A1 (en) * 2011-03-09 2012-09-13 Applied Materials, Inc. Insulation coverage of cvd electrode
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
EP2523227A1 (en) 2011-05-13 2012-11-14 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
KR101441478B1 (ko) * 2012-07-09 2014-09-17 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
KR101387518B1 (ko) * 2012-08-28 2014-05-07 주식회사 유진테크 기판처리장치
JP2014049529A (ja) * 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
KR101468541B1 (ko) * 2012-10-25 2014-12-04 주식회사 에스에프에이 가스 분배 조립체
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
TWI644073B (zh) * 2013-03-11 2018-12-11 Applied Materials, Inc. 高溫處理室蓋體
US10426001B2 (en) * 2013-03-15 2019-09-24 Tokyo Electron Limited Processing system for electromagnetic wave treatment of a substrate at microwave frequencies
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) * 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR101855654B1 (ko) * 2016-12-23 2018-05-08 주식회사 테스 대면적 샤워헤드 어셈블리
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US11380557B2 (en) * 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN113056572B (zh) * 2018-11-16 2023-09-05 株式会社爱发科 真空处理装置
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
JP7132358B2 (ja) * 2019-01-07 2022-09-06 株式会社アルバック 真空処理装置
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR102700366B1 (ko) 2019-01-29 2024-08-30 주성엔지니어링(주) 샤워헤드 및 이를 포함하는 기판처리장치
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
CN112192154A (zh) * 2020-09-30 2021-01-08 靖江先锋半导体科技有限公司 刻蚀机用气体喷淋盘的加工工艺
JP7337869B2 (ja) * 2021-03-26 2023-09-04 株式会社日立製作所 分散ストレージシステム、及び管理方法
US12181801B2 (en) 2021-05-03 2024-12-31 Applied Materials, Inc. Chamber and methods of treating a substrate after exposure to radiation
KR102909116B1 (ko) * 2022-10-04 2026-01-07 주식회사 원익아이피에스 가스분사조립체 및 이를 포함하는 기판처리장치

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187619A (ja) * 1987-01-30 1988-08-03 Fuji Xerox Co Ltd プラズマｃｖｄ装置
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
DE3729208C1 (de) * 1987-08-29 1988-12-22 Rotring Werke Riepe Kg Schneidvorrichtung
JP2837993B2 (ja) * 1992-06-19 1998-12-16 松下電工株式会社 プラズマ処理方法およびその装置
JPH06124960A (ja) * 1992-10-13 1994-05-06 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0831421B2 (ja) * 1992-10-14 1996-03-27 ヒラノ光音株式会社 プラズマ電極装置
JP2662365B2 (ja) * 1993-01-28 1997-10-08 アプライド マテリアルズ インコーポレイテッド 改良された排出システムを有する単一基板式の真空処理装置
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5647911A (en) 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
WO1995033866A1 (en) 1994-06-03 1995-12-14 Materials Research Corporation Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5614026A (en) 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US5989652A (en) 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US6093645A (en) 1997-02-10 2000-07-25 Tokyo Electron Limited Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
US5994678A (en) * 1997-02-12 1999-11-30 Applied Materials, Inc. Apparatus for ceramic pedestal and metal shaft assembly
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
JP3480271B2 (ja) 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
WO1999025895A1 (en) 1997-11-17 1999-05-27 Symetrix Corporation Method and apparatus for misted deposition of thin films
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6302057B1 (en) 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6254742B1 (en) 1999-07-12 2001-07-03 Semitool, Inc. Diffuser with spiral opening pattern for an electroplating reactor vessel
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6170432B1 (en) * 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
JP3501715B2 (ja) 2000-03-21 2004-03-02 シャープ株式会社 プラズマプロセス装置
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210090261A (ko) 2019-01-07 2021-07-19 가부시키가이샤 아루박 진공 처리 장치, 진공 처리 장치의 클리닝 방법
US11901162B2 (en) 2019-01-07 2024-02-13 Ulvac, Inc. Vacuum processing apparatus and method of cleaning vacuum processing apparatus
KR20210010350A (ko) * 2019-07-19 2021-01-27 도쿄엘렉트론가부시키가이샤 제 1 도전성 부재와 제 2 도전성 부재의 접합 구조체와 접합 방법 및 기판 처리 장치
KR102423951B1 (ko) 2019-07-19 2022-07-21 도쿄엘렉트론가부시키가이샤 제 1 도전성 부재와 제 2 도전성 부재의 접합 구조체와 접합 방법 및 기판 처리 장치

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US20030066607A1 (en) 2003-04-10
EP1118693A2 (en) 2001-07-25
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TW477830B (en) 2002-03-01
KR20060121781A (ko) 2006-11-29
SG87200A1 (en) 2002-03-19
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US6477980B1 (en) 2002-11-12
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US6823589B2 (en) 2004-11-30
EP1118693A3 (en) 2001-10-17
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KR100882072B1 (ko) 2009-02-10
US7017269B2 (en) 2006-03-28
DE60125608D1 (de) 2007-02-15
US20040118345A1 (en) 2004-06-24
KR100802682B1 (ko) 2008-02-12
KR20050033573A (ko) 2005-04-12
KR20010076391A (ko) 2001-08-11

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