JP4423031B2 - 高い電流の出力制御のための出力半導体構成素子を備えた装置および該装置の使用 - Google Patents
高い電流の出力制御のための出力半導体構成素子を備えた装置および該装置の使用 Download PDFInfo
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Description
−各出力半導体構成素子が、1つの共通の支持体の表面上に電気的に絶縁されて固定されていて、それぞれ少なくとも2つの互いに別個に配置された電気的な接続面を有しており、
−支持体の前記表面上に前記1つまたは複数の出力半導体構成素子に並んでかつ各出力半導体構成素子から電気的に絶縁されて2つまたは2つよりも多い互いに別個に配置されたバスバーが固定されており、
−各出力半導体構成素子の一方の電気的な接続面が、1つまたは複数の電気的な導体ブリッジによって前記バスバーのうちの一方のバスバーに電気的に接続されており、当該出力半導体構成素子の他方の電気的な接続面が、1つまたは複数の電気的な導体ブリッジによって前記バスバーのうちの他方のバスバーに電気的に接続されている。
Claims (23)
- 高い電流の出力制御のための1つまたは複数の出力半導体構成素子(1)を備えた装置において、
−各出力半導体構成素子(1)が、1つの共通の支持体(2)の導電性の表面(20)に固定されていて、それぞれ少なくとも2つの互いに別個に配置された電気的な接続面(11,11)を有しており、
−支持体(2)の前記表面(20)に前記出力半導体構成素子(1)に並んでかつ各出力半導体構成素子(1)から電気的に絶縁されて2つまたは2つよりも多い互いに別個にかつ互いに電気的に絶縁されて配置されたバスバー(3)が固定されており、
−各出力半導体構成素子(1)の一方の電気的な接続面(11)が、1つまたは複数の電気的な導体ブリッジ(4)によって前記バスバー(3)のうちの一方のバスバー(3)に電気的に接続されており、当該出力半導体構成素子(1)の他方の電気的な接続面(11)が、1つまたは複数の電気的な導体ブリッジ(4)によって前記バスバー(3)のうちの他方のバスバー(3)に電気的に接続されており、
バスバー(3)と、支持体(2)の、該支持体(2)の表面(20)とは反対の側の表面(20′)とを、支持体(2)を取り囲んで把持する、導電性の材料から成るクランプ装置(100)がクランプしてまとめ合わせており、該クランプ装置(100)は、バスバー(3)へ、またはバスバー(3)から電流を案内するものである
ことを特徴とする、高い電流の出力制御のための1つまたは複数の出力半導体構成素子を備えた装置。 - −1つの出力半導体構成素子(1)の一方の電気的な接続面(11)が1つまたは複数の電気的な導体ブリッジ(4)によって、一方の電気的な極(−;+)に対応する一方のバスバー(3)に電気的に接続されており、
−別の1つの出力半導体構成素子(1)の一方の電気的な接続面(11)が1つまたは複数の電気的な導体ブリッジ(4)によって、前記一方の電気的な極(−;+)とは逆向きの他方の電気的な極(+;−)に対応する他方のバスバー(3)に電気的に接続されており、
−最初に挙げた方の出力半導体構成素子(1)の他方の電気的な接続面(11)と、次に挙げた方の出力半導体構成素子(1)の他方の電気的な接続面(11)とが、1つまたは複数の電気的な導体ブリッジ(4)によって別のバスバー(3)に電気的に接続されている、
請求項1記載の装置。 - 2つまたは2つよりも多いバスバー(3)が支持体(2)の表面(20)に沿って相並んで配置されている、請求項1または2記載の装置。
- 2つまたは2つよりもバスバー(3)が上下にかつ互いに電気的に絶縁されて支持体(2)の表面(20)に配置されており、該バスバー(3)がそれぞれ1つの自由な接続面(30)を有しており、該接続面(30)が、1つまたは複数の電気的な導体ブリッジ(4)によって少なくとも1つの出力半導体構成素子(1)の1つの電気的な接続面(11)に接続されている、請求項1から3までのいずれか1項記載の装置。
- 上下に配置された前記バスバー(3)のうちの1つのバスバー(3)の自由な接続面(30)が、当該バスバー(3)の、当該バスバー(3)上に配置された別のバスバー(3)を超えて張り出した表面(300)によって形成されており、該表面(300)が縁辺部(31)を有しており、該縁辺部(31)に跨るように、当該バスバー(3)の自由な接続面(30)を1つの出力半導体構成素子(1)の1つの電気的な接続面(11)に電気的に接続させる電気的な導体ブリッジ(4)がそれぞれ案内されている、請求項4記載の装置。
- 1つのバスバー(3)の側方で並んで、かつ電気的に絶縁された状態で支持体(2)の表面(20)に各バスバー(3)とは別個に少なくとも1つの電気的な中間接続面(5)が配置されており、該中間接続面(5)が、1つまたは複数の出力半導体構成素子(1)の1つの接続面(11)に電気的に接続されていると同時に、1つまたは複数の電気的な導体ブリッジ(4)によって1つのバスバー(3)に電気的に接続されている、請求項1から5までのいずれか1項記載の装置。
- 1つの中間接続面(5)と1つの出力半導体構成素子(1)の1つの接続面(11)とが、直接に互いに電気的に接触していて、かつ互いに固定されている、請求項6記載の装置。
- 1つの中間接続面(5)と1つの出力半導体構成素子(1)の1つの接続面(11)とが、電気的に互いから絶縁されていて、1つまたは複数の電気的な導体ブリッジ(40)によって電気的に互いに接続されている、請求項6または7記載の装置。
- 1つの中間接続面(5)が縁辺部(51)を有しており、該縁辺部(51)に跨るように、前記中間接続面(5)に配置された各電気的な導体ブリッジ(4,40)が案内されている、請求項6から8までのいずれか1項記載の装置。
- −支持体(2)の表面(20)が導電性であり、
−各出力半導体構成素子(1)と各電気的な中間接続面(5)とが、支持体(2)の導電性の表面(20)上に設けられた電気的に絶縁性の材料から成る層(6)によって支持体(2)の導電性の表面(20)から電気的に絶縁されている、
請求項1から9までのいずれか1項記載の装置。 - 2つまたは2つよりも多い出力半導体構成素子(1)および/または1つまたは複数の中間接続面(5)が、電気的に絶縁性の材料から成る1つの共通の層(6)上に固定されている、請求項10記載の装置。
- −支持体(2)の導電性の表面(20)が一方の電気的な極(−;+)に対応しており、−該一方の電気的な極(−;+)に対応するバスバー(3)が直接に前記表面(20)に接続されている、
請求項10または11記載の装置。 - 直接に前記表面(20)に接続されたバスバー(3)が、前記表面(20)自体によって形成されている、請求項12記載の装置。
- 支持体(2)の前記表面(20)上に、電気的に絶縁性の材料から成るプリント配線板(7)が固定されており、該プリント配線板(7)上に少なくとも1つのドライバ回路(8)と、1つまたは複数の電気的な接続面(71)とが固定されており、前記プリント配線板(7)に設けられた前記各接続面(71)が、それぞれ少なくとも1つの電気的な導体ブリッジ(41)によって出力半導体構成素子(1)に設けられた電気的な接続面(12)に接続されている、請求項1から13までのいずれか1項記載の装置。
- 電気的な導体ブリッジ(4,40,41)がボンディングワイヤから成っている、請求項1から14までのいずれか1項記載の装置。
- 電気的な導体ブリッジ(4,40,41)がテープから成っている、請求項1から15までのいずれか1項記載の装置。
- 電気的な導体ブリッジ(4,40,41)がはんだブリッジから成っている、請求項1から16までのいずれか1項記載の装置。
- 支持体(2)がヒートシンク(9)に結合されている、請求項1から17までのいずれか1項記載の装置。
- 前記ヒートシンク(9)が冷却体(90)を有しており、該冷却体(90)が支持体(2)の表面(20)の下で支持体(2)と熱的に結合されている、請求項18記載の装置。
- 前記冷却体(90)が支持体(2)に組み込まれている、請求項19記載の装置。
- 支持体(2)の、該支持体(2)の一方の表面(20)とは反対の側の表面(20′)にコンデンサ(110)が配置されており、該コンデンサ(110)が、誘電体(113)により互いに絶縁された2つの電極(111,112)を備えており、両電極のうちの一方の電極(111)が、互いに逆向きの両電気的な極のうちの一方の電気的な極(−;+)に対応していて、支持体(2)の一方の表面(20)とは反対の側の表面(20′)と面接触しており、他方の電極(112)が他方の電気的な極(+;−)に対応している、請求項1から20までのいずれか1項記載の装置。
- 前記コンデンサ(110)の、支持体(2)の、該支持体(2)一方の表面(20)とは反対の側の表面(20′)と面接触していてかつ一方の電気的な極(−;+)に対応している一方の電極(111)が、同一の電気的な極(−;+)に対応しているバスバー(3)に導電接続されており、前記コンデンサ(110)の他方の電極(112)が、他方の電気的な極(+;−)に対応しているバスバー(3)に導電接続されている、請求項21記載の装置。
- 請求項1から22までのいずれか1項記載の装置の、自動車のエンジンルーム内での使用。
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PCT/DE2002/003354 WO2003032390A2 (de) | 2001-09-28 | 2002-09-10 | Anordnung mit leistungshalbleiterbauelementen zur leistungssteuerung hoher ströme und anwendung der anordnung |
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JP (1) | JP4423031B2 (ja) |
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DE (2) | DE50205066D1 (ja) |
DK (1) | DK1433204T3 (ja) |
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DE102004026061B4 (de) * | 2004-05-25 | 2009-09-10 | Danfoss Silicon Power Gmbh | Leistungshalbleitermodul und Verfahren zum Kühlen eines Leistungshalbleitermoduls |
US7573107B2 (en) * | 2004-09-23 | 2009-08-11 | International Rectifier Corporation | Power module |
JP4106061B2 (ja) * | 2005-04-22 | 2008-06-25 | 三菱電機株式会社 | パワーユニット装置及び電力変換装置 |
DE102005039165B4 (de) * | 2005-08-17 | 2010-12-02 | Infineon Technologies Ag | Draht- und streifengebondetes Halbleiterleistungsbauteil und Verfahren zu dessen Herstellung |
DE102007036048A1 (de) | 2007-08-01 | 2009-02-05 | Siemens Ag | Anordnung mit zumindest einem Halbleiterbauelement, insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme |
CN104682673B (zh) * | 2013-11-29 | 2018-06-01 | 中车大连电力牵引研发中心有限公司 | 轻轨车辆牵引变流器模块及轻轨车辆牵引变流器 |
WO2015093169A1 (ja) * | 2013-12-19 | 2015-06-25 | 富士電機株式会社 | 半導体モジュールおよび電気駆動車両 |
DE102014107271B4 (de) * | 2014-05-23 | 2019-11-07 | Infineon Technologies Ag | Halbleitermodul |
US9842718B1 (en) | 2016-06-10 | 2017-12-12 | Sumitomo Wiring Systems, Ltd. | Fuse array for vehicle electrical system having multiple discrete circuits |
FR3091141B1 (fr) * | 2018-12-21 | 2021-06-25 | Valeo Siemens Eautomotive France Sas | Ensemble électrique d’une barre de connexion électrique et d’un module de refroidissement |
US11682606B2 (en) * | 2019-02-07 | 2023-06-20 | Ford Global Technologies, Llc | Semiconductor with integrated electrically conductive cooling channels |
RU197562U1 (ru) * | 2019-12-11 | 2020-05-13 | Валерий Валерьевич Камаев | Система электротехнических шин и неподвижных контактов с универсальным держателем |
FR3105716B1 (fr) | 2019-12-18 | 2022-07-01 | Valeo Siemens Eautomotive France Sas | Équipement électrique comprenant une barre de connexion électrique refroidie par deux faces d’un dissipateur thermique |
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DE3937045A1 (de) * | 1989-11-07 | 1991-05-08 | Abb Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
DE4005333A1 (de) | 1990-02-20 | 1991-08-22 | Rehm Schweisstechnik Gmbh | Elektronischer leistungs-schalter |
JP2725954B2 (ja) | 1992-07-21 | 1998-03-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5388028A (en) | 1993-07-28 | 1995-02-07 | Kaman Electromagnetics Corporation | Low impedance interconnection assembly for high frequency switching power semiconductor devices and low inductance modular capacitor |
DE4327895A1 (de) | 1993-08-19 | 1995-02-23 | Abb Management Ag | Stromrichtermodul |
US5473190A (en) * | 1993-12-14 | 1995-12-05 | Intel Corporation | Tab tape |
DE4421319A1 (de) * | 1994-06-17 | 1995-12-21 | Abb Management Ag | Niederinduktives Leistungshalbleitermodul |
US5559363A (en) * | 1995-06-06 | 1996-09-24 | Martin Marietta Corporation | Off-chip impedance matching utilizing a dielectric element and high density interconnect technology |
US6521982B1 (en) * | 2000-06-02 | 2003-02-18 | Amkor Technology, Inc. | Packaging high power integrated circuit devices |
FR2802714B1 (fr) | 1999-12-21 | 2002-03-08 | Sagem | Module electrique de puissance et procede pour sa fabrication |
JP2001320171A (ja) * | 2000-05-08 | 2001-11-16 | Shinko Electric Ind Co Ltd | 多層配線基板及び半導体装置 |
JP4044265B2 (ja) * | 2000-05-16 | 2008-02-06 | 三菱電機株式会社 | パワーモジュール |
WO2002041402A2 (en) * | 2000-11-16 | 2002-05-23 | Silicon Wireless Corporation | Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same |
JP2002246515A (ja) * | 2001-02-20 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置 |
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DK1433204T3 (da) | 2006-04-03 |
US20040256710A1 (en) | 2004-12-23 |
US7057275B2 (en) | 2006-06-06 |
ES2248609T3 (es) | 2006-03-16 |
WO2003032390A3 (de) | 2004-01-29 |
DE10294631D2 (de) | 2004-10-07 |
EP1433204B1 (de) | 2005-11-23 |
CN1559087A (zh) | 2004-12-29 |
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CN100477209C (zh) | 2009-04-08 |
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