JP4413008B2 - スパッタターゲットを製造する方法 - Google Patents
スパッタターゲットを製造する方法 Download PDFInfo
- Publication number
- JP4413008B2 JP4413008B2 JP2003520871A JP2003520871A JP4413008B2 JP 4413008 B2 JP4413008 B2 JP 4413008B2 JP 2003520871 A JP2003520871 A JP 2003520871A JP 2003520871 A JP2003520871 A JP 2003520871A JP 4413008 B2 JP4413008 B2 JP 4413008B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- intermediate layer
- layer
- heating
- upper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/26—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Description
相対密度(%)=[(嵩密度)/(真密度)]×100
12 ステンレス鋼管
14 ターゲット材料層
16 上層
18 誘導加熱コイル
Claims (16)
- スパッタターゲットを製造する方法であって、
ターゲットホルダーを準備する工程と、
中間層を前記ターゲットホルダー上に形成する工程と、
上層を前記中間層の上面に形成する工程であって、前記上層は前記中間層の融点よりも実質的に高い融点を有する材料からなるような工程と、
前記中間層および前記上層によって被覆された前記ターゲットホルダーを加熱する工程と、
前記加熱工程後、前記上層を除去する工程と
を含むことを特徴とする方法。 - 剥離層を前記中間層と前記上層間に形成する工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記ターゲットホルダーは板状であることを特徴とする請求項1又は2に記載の方法。
- 前記ターゲットホルダーは管状であることを特徴とする請求項1又は2に記載の方法。
- 前記ターゲットホルダーはステンレス鋼管であることを特徴とする請求項4に記載の方法。
- 前記中間層は金属、金属合金、または金属酸化物からなることを特徴とする請求項1ないし5のいずれか1つに記載の方法。
- 前記中間層を噴霧または浸漬によって形成することを特徴とする請求項1ないし6のいずれか1つに記載の方法。
- 前記中間層を前記ターゲットホルダーの周囲に少なくとも1つのワイヤ、帯片または箔をコイル状に巻き付けるかまたは前記ターゲットホルダーに断片を設けることによって形成することを特徴とする請求項1ないし6のいずれか1つに記載の方法。
- 前記中間層は噴霧された亜鉛または噴霧された亜鉛合金からなることを特徴とする請求項1ないし8のいずれか1つに記載の方法。
- 前記上層の材料は金属、金属合金、または金属酸化物からなることを特徴とする請求項1ないし9のいずれか1つに記載の方法。
- 前記上層を噴霧または浸漬によって形成することを特徴とする請求項1ないし10のいずれか1つに記載の方法。
- 前記上層は前記中間層の上面に噴霧されたステンレス鋼層であることを特徴とする請求項1ないし11のいずれか1つに記載の方法。
- 前記剥離層は金属酸化物からなることを特徴とする請求項2に記載の方法。
- 前記加熱工程は前記中間層の融点と等しいかまたはそれよりも高い温度に加熱する工程であることを特徴とする請求項1ないし13のいずれか1つに記載の方法。
- 前記加熱工程は前記中間層の2つ以上の成分間に拡散が生じる温度に加熱する工程からなることを特徴とする請求項1ないし13のいずれか1つに記載の方法。
- 前記加熱工程の加熱は誘導加熱であることを特徴とする請求項1ないし15のいずれか1つに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01203086 | 2001-08-13 | ||
EP01203091 | 2001-08-13 | ||
PCT/EP2002/007695 WO2003016584A1 (en) | 2001-08-13 | 2002-07-10 | A process for the manufacturing of a sputter target |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004538372A JP2004538372A (ja) | 2004-12-24 |
JP4413008B2 true JP4413008B2 (ja) | 2010-02-10 |
Family
ID=26076977
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003520870A Pending JP2004538371A (ja) | 2001-08-13 | 2002-07-10 | スパッタターゲット |
JP2003520871A Expired - Fee Related JP4413008B2 (ja) | 2001-08-13 | 2002-07-10 | スパッタターゲットを製造する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003520870A Pending JP2004538371A (ja) | 2001-08-13 | 2002-07-10 | スパッタターゲット |
Country Status (6)
Country | Link |
---|---|
US (2) | US20040253382A1 (ja) |
EP (2) | EP1419283A1 (ja) |
JP (2) | JP2004538371A (ja) |
KR (2) | KR20040032907A (ja) |
CN (2) | CN1289709C (ja) |
WO (2) | WO2003016583A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4961672B2 (ja) * | 2004-03-05 | 2012-06-27 | 東ソー株式会社 | 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法 |
TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
WO2006017311A1 (en) | 2004-07-12 | 2006-02-16 | Cardinal Cg Company | Low-maintenance coatings |
US20060144697A1 (en) * | 2005-01-06 | 2006-07-06 | Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.) Dudelange | Method of making coated article by sputtering cast target to form zinc oxide inclusive layer(s) |
FR2881757B1 (fr) * | 2005-02-08 | 2007-03-30 | Saint Gobain | Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium |
CA2560030C (en) * | 2005-11-24 | 2013-11-12 | Sulzer Metco Ag | A thermal spraying material, a thermally sprayed coating, a thermal spraying method an also a thermally coated workpiece |
EP2013150B1 (en) | 2006-04-11 | 2018-02-28 | Cardinal CG Company | Photocatalytic coatings having improved low-maintenance properties |
JP2009541594A (ja) * | 2006-06-26 | 2009-11-26 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | 回転可能なスパッタターゲットを製造する方法 |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
KR101612130B1 (ko) * | 2007-03-20 | 2016-04-12 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 산화물 반도체막 및 반도체 디바이스 |
US20080296352A1 (en) * | 2007-05-30 | 2008-12-04 | Akihiro Hosokawa | Bonding method for cylindrical target |
WO2009036284A1 (en) | 2007-09-14 | 2009-03-19 | Cardinal Cg Company | Low-maintenance coatings, and methods for producing low-maintenance coatings |
TW201101514A (en) * | 2009-05-18 | 2011-01-01 | First Solar Inc | Silicon nitride diffusion barrier layer for cadmium stannate TCO |
DE102011012034A1 (de) * | 2011-02-22 | 2012-08-23 | Heraeus Materials Technology Gmbh & Co. Kg | Rohrförmiges Sputtertarget |
KR101988391B1 (ko) | 2011-06-27 | 2019-06-12 | 솔레라스 리미티드 | 스퍼터링 타겟 |
JP2013019031A (ja) * | 2011-07-12 | 2013-01-31 | Tokuriki Honten Co Ltd | 円筒形ターゲットおよびその製造方法 |
CN103290372B (zh) * | 2013-05-10 | 2015-11-18 | 无锡舒玛天科新能源技术有限公司 | 一种用于薄膜太阳能电池的铜铟镓旋转靶材制备方法 |
CN103317124B (zh) * | 2013-06-05 | 2015-04-08 | 无锡舒玛天科新能源技术有限公司 | 一种铜铟镓旋转靶材的制备方法 |
US9368330B2 (en) * | 2014-05-02 | 2016-06-14 | Bh5773 Ltd | Sputtering targets and methods |
KR102206547B1 (ko) * | 2015-03-18 | 2021-01-22 | 바이탈 씬 필름 머티리얼즈 (광동) 캄파니 리미티드 | 회전 스퍼터링 타겟의 형성 방법 |
US10604442B2 (en) | 2016-11-17 | 2020-03-31 | Cardinal Cg Company | Static-dissipative coating technology |
CN108772567A (zh) * | 2018-06-29 | 2018-11-09 | 米亚索乐装备集成(福建)有限公司 | 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法 |
CN109570931B (zh) * | 2018-12-08 | 2020-11-10 | 东曹(上海)电子材料有限公司 | 一种大尺寸平板显示器用溅射靶材的生产方法 |
CN113308672A (zh) * | 2021-04-15 | 2021-08-27 | 基迈克材料科技(苏州)有限公司 | ZnSn合金靶材及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US3681226A (en) * | 1970-07-02 | 1972-08-01 | Ibm | Sputtering process for making ferroelectric films |
DE3318828C2 (de) * | 1983-05-24 | 1986-01-02 | Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde | Verfahren zum Aufbonden von Targetmaterial |
JPS63290273A (ja) | 1987-05-22 | 1988-11-28 | Furukawa Mining Co Ltd | カルコゲナイド化合物からなるスパッタリングタ−ゲットの接合方法 |
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
JPH07228967A (ja) * | 1994-02-17 | 1995-08-29 | Mitsubishi Materials Corp | 長尺円筒状スパッタリングターゲット |
JPH07331426A (ja) | 1994-06-10 | 1995-12-19 | Hitachi Ltd | スパッタリングターゲット材の接合方法 |
US5593082A (en) * | 1994-11-15 | 1997-01-14 | Tosoh Smd, Inc. | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
JP3112804B2 (ja) * | 1995-03-13 | 2000-11-27 | セントラル硝子株式会社 | 半導体用タングステンターゲット |
US6030514A (en) * | 1997-05-02 | 2000-02-29 | Sony Corporation | Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor |
US6113761A (en) * | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6787003B2 (en) * | 1999-12-03 | 2004-09-07 | N.V. Bekaert S.A. | Sputtering target and methods of making and using same |
-
2002
- 2002-07-10 CN CNB028159063A patent/CN1289709C/zh not_active Expired - Fee Related
- 2002-07-10 WO PCT/EP2002/007694 patent/WO2003016583A1/en not_active Application Discontinuation
- 2002-07-10 JP JP2003520870A patent/JP2004538371A/ja active Pending
- 2002-07-10 US US10/486,649 patent/US20040253382A1/en not_active Abandoned
- 2002-07-10 KR KR10-2004-7002101A patent/KR20040032907A/ko not_active Application Discontinuation
- 2002-07-10 EP EP02748852A patent/EP1419283A1/en not_active Withdrawn
- 2002-07-10 JP JP2003520871A patent/JP4413008B2/ja not_active Expired - Fee Related
- 2002-07-10 EP EP02764663A patent/EP1419284A1/en not_active Withdrawn
- 2002-07-10 WO PCT/EP2002/007695 patent/WO2003016584A1/en active Application Filing
- 2002-07-10 KR KR10-2004-7002102A patent/KR20040030960A/ko not_active Application Discontinuation
- 2002-07-10 CN CNB028159055A patent/CN1289708C/zh not_active Expired - Fee Related
- 2002-07-10 US US10/486,650 patent/US7563488B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20040030960A (ko) | 2004-04-09 |
US7563488B2 (en) | 2009-07-21 |
EP1419283A1 (en) | 2004-05-19 |
CN1289709C (zh) | 2006-12-13 |
JP2004538372A (ja) | 2004-12-24 |
WO2003016583A1 (en) | 2003-02-27 |
US20040253382A1 (en) | 2004-12-16 |
CN1541283A (zh) | 2004-10-27 |
EP1419284A1 (en) | 2004-05-19 |
CN1541282A (zh) | 2004-10-27 |
WO2003016584A1 (en) | 2003-02-27 |
JP2004538371A (ja) | 2004-12-24 |
KR20040032907A (ko) | 2004-04-17 |
US20050118339A1 (en) | 2005-06-02 |
CN1289708C (zh) | 2006-12-13 |
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