JP4403665B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4403665B2
JP4403665B2 JP2001072414A JP2001072414A JP4403665B2 JP 4403665 B2 JP4403665 B2 JP 4403665B2 JP 2001072414 A JP2001072414 A JP 2001072414A JP 2001072414 A JP2001072414 A JP 2001072414A JP 4403665 B2 JP4403665 B2 JP 4403665B2
Authority
JP
Japan
Prior art keywords
semiconductor element
bottom electrode
semiconductor device
metal block
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001072414A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002270736A5 (ko
JP2002270736A (ja
Inventor
享 木村
光平 村上
純司 藤野
建一 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001072414A priority Critical patent/JP4403665B2/ja
Publication of JP2002270736A publication Critical patent/JP2002270736A/ja
Publication of JP2002270736A5 publication Critical patent/JP2002270736A5/ja
Application granted granted Critical
Publication of JP4403665B2 publication Critical patent/JP4403665B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2001072414A 2001-03-14 2001-03-14 半導体装置 Expired - Lifetime JP4403665B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001072414A JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001072414A JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009018542A Division JP4864990B2 (ja) 2009-01-29 2009-01-29 半導体装置
JP2009104090A Division JP2009164647A (ja) 2009-04-22 2009-04-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2002270736A JP2002270736A (ja) 2002-09-20
JP2002270736A5 JP2002270736A5 (ko) 2006-11-30
JP4403665B2 true JP4403665B2 (ja) 2010-01-27

Family

ID=18930001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001072414A Expired - Lifetime JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Country Status (1)

Country Link
JP (1) JP4403665B2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847311B2 (en) 2014-11-04 2017-12-19 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method for the semiconductor device
US10103090B2 (en) 2014-03-10 2018-10-16 Toyota Jidosha Kabushiki Kaisha Semiconductor device

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3740116B2 (ja) 2002-11-11 2006-02-01 三菱電機株式会社 モールド樹脂封止型パワー半導体装置及びその製造方法
JP2004349347A (ja) 2003-05-20 2004-12-09 Rohm Co Ltd 半導体装置
JP4015975B2 (ja) 2003-08-27 2007-11-28 三菱電機株式会社 半導体装置
JP2006114716A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 電力用半導体装置
JP4784150B2 (ja) * 2004-11-10 2011-10-05 富士電機株式会社 半導体装置および、半導体装置の製造方法
JP5415823B2 (ja) * 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
JP5947537B2 (ja) 2011-04-19 2016-07-06 トヨタ自動車株式会社 半導体装置及びその製造方法
CN102522340A (zh) * 2011-12-21 2012-06-27 杭州士兰集成电路有限公司 一种大功率模块的散热片安装方法
JP2013171891A (ja) * 2012-02-17 2013-09-02 Toshiba Corp 半導体装置、半導体モジュール、及び半導体モジュールの製造方法
US9312211B2 (en) 2012-03-07 2016-04-12 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method thereof
DE112014004421B4 (de) * 2013-09-27 2021-07-08 Mitsubishi Electric Corporation Verpresster Kühlkörper und Leistungsmodul mit integriertem Kühlkörper
JP5892184B2 (ja) 2014-03-18 2016-03-23 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
WO2016030955A1 (ja) * 2014-08-25 2016-03-03 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
JP2017103434A (ja) 2015-12-04 2017-06-08 トヨタ自動車株式会社 半導体装置
DE102015122259B4 (de) * 2015-12-18 2020-12-24 Infineon Technologies Austria Ag Halbleitervorrichtungen mit einer porösen Isolationsschicht
JP7501453B2 (ja) 2021-06-11 2024-06-18 株式会社村田製作所 回路モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103090B2 (en) 2014-03-10 2018-10-16 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US9847311B2 (en) 2014-11-04 2017-12-19 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method for the semiconductor device

Also Published As

Publication number Publication date
JP2002270736A (ja) 2002-09-20

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