JP4393402B2 - 有機電子素子の製造方法および製造装置 - Google Patents

有機電子素子の製造方法および製造装置 Download PDF

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Publication number
JP4393402B2
JP4393402B2 JP2005057445A JP2005057445A JP4393402B2 JP 4393402 B2 JP4393402 B2 JP 4393402B2 JP 2005057445 A JP2005057445 A JP 2005057445A JP 2005057445 A JP2005057445 A JP 2005057445A JP 4393402 B2 JP4393402 B2 JP 4393402B2
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JP
Japan
Prior art keywords
substrate
passivation layer
organic
upper electrode
forming step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005057445A
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English (en)
Japanese (ja)
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JP2005332803A5 (enExample
JP2005332803A (ja
Inventor
浩士 須貝
正博 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005057445A priority Critical patent/JP4393402B2/ja
Priority to US11/105,498 priority patent/US7632704B2/en
Publication of JP2005332803A publication Critical patent/JP2005332803A/ja
Publication of JP2005332803A5 publication Critical patent/JP2005332803A5/ja
Application granted granted Critical
Publication of JP4393402B2 publication Critical patent/JP4393402B2/ja
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005057445A 2004-04-22 2005-03-02 有機電子素子の製造方法および製造装置 Expired - Fee Related JP4393402B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005057445A JP4393402B2 (ja) 2004-04-22 2005-03-02 有機電子素子の製造方法および製造装置
US11/105,498 US7632704B2 (en) 2004-04-22 2005-04-14 Manufacturing method for organic electronic element and manufacturing apparatus therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004126561 2004-04-22
JP2005057445A JP4393402B2 (ja) 2004-04-22 2005-03-02 有機電子素子の製造方法および製造装置

Publications (3)

Publication Number Publication Date
JP2005332803A JP2005332803A (ja) 2005-12-02
JP2005332803A5 JP2005332803A5 (enExample) 2007-02-01
JP4393402B2 true JP4393402B2 (ja) 2010-01-06

Family

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Family Applications (1)

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JP2005057445A Expired - Fee Related JP4393402B2 (ja) 2004-04-22 2005-03-02 有機電子素子の製造方法および製造装置

Country Status (2)

Country Link
US (1) US7632704B2 (enExample)
JP (1) JP4393402B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100065174A (ko) * 2007-10-02 2010-06-15 가부시키가이샤 알박 유기 ｅｌ 소자, 유기 ｅｌ 소자 제조 방법
FR2947097B1 (fr) * 2009-06-23 2011-11-25 Riber Sa Appareil de fabrication de galettes de semi-conducteur et appareil de depot par evaporation de materiaux par jet moleculaire
KR101990555B1 (ko) * 2012-12-24 2019-06-19 삼성디스플레이 주식회사 박막봉지 제조장치 및 박막봉지 제조방법
KR20200002242A (ko) * 2018-06-29 2020-01-08 캐논 톡키 가부시키가이샤 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
DE102019128753A1 (de) * 2019-10-24 2021-04-29 Apeva Se Verfahren zum Abscheiden organischer Schichtstrukturen, insbesondere OLEDs

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JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法
JP3577117B2 (ja) * 1994-10-07 2004-10-13 Ｔｄｋ株式会社 有機エレクトロルミネセンス素子の製法
JPH08111285A (ja) 1994-10-07 1996-04-30 Tdk Corp 有機エレクトロルミネセンス素子の製造方法及びその装置
JP3524711B2 (ja) * 1997-03-18 2004-05-10 三洋電機株式会社 有機エレクトロルミネッセンス素子及びその製造方法
JPH1161386A (ja) * 1997-08-22 1999-03-05 Fuji Electric Co Ltd 有機薄膜発光素子の成膜装置
JP3031356B1 (ja) * 1998-10-05 2000-04-10 日本電気株式会社 有機ｅｌパネル及びその製造方法
US6736985B1 (en) * 1999-05-05 2004-05-18 Agere Systems Inc. High-resolution method for patterning a substrate with micro-printing
US6641933B1 (en) * 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
TW471011B (en) * 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
JP3783099B2 (ja) 2000-05-16 2006-06-07 株式会社豊田中央研究所 有機電界発光素子
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
US7323635B2 (en) * 2001-06-15 2008-01-29 University Of Massachusetts Photovoltaic cell
JP4614588B2 (ja) * 2001-06-29 2011-01-19 三洋電機株式会社 エレクトロルミネッセンス表示装置の製造方法
US6815723B2 (en) * 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
JP2003208978A (ja) * 2002-01-11 2003-07-25 Seiko Epson Corp 有機ｅｌ装置の製造方法及びその装置、電気光学装置、並びに電子機器
US20030146692A1 (en) * 2002-01-11 2003-08-07 Seiko Epson Corporation Organic EL device and manufacturing method therefor, electrooptic apparatus, and electronic apparatus
US7378124B2 (en) * 2002-03-01 2008-05-27 John James Daniels Organic and inorganic light active devices and methods for making the same
JP4651916B2 (ja) * 2002-03-07 2011-03-16 株式会社半導体エネルギー研究所 発光装置の作製方法
EP1354638A3 (en) * 2002-04-15 2004-11-03 Fuji Photo Film Co., Ltd. Method and apparatus for manufacturing pattern members using webs on which coating films have been formed
US6943066B2 (en) * 2002-06-05 2005-09-13 Advantech Global, Ltd Active matrix backplane for controlling controlled elements and method of manufacture thereof
JP2004047179A (ja) * 2002-07-09 2004-02-12 Dainippon Printing Co Ltd 帯電防止有機ｅｌ素子およびその製造方法
JP5072184B2 (ja) * 2002-12-12 2012-11-14 株式会社半導体エネルギー研究所 成膜方法
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US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
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JP4179041B2 (ja) * 2003-04-30 2008-11-12 株式会社島津製作所 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子
US6875320B2 (en) * 2003-05-05 2005-04-05 Eastman Kodak Company Highly transparent top electrode for OLED device
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices

Also Published As

Publication number Publication date
US7632704B2 (en) 2009-12-15
JP2005332803A (ja) 2005-12-02
US20050239232A1 (en) 2005-10-27

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