JP4391512B2 - 静電耐圧評価装置および静電耐圧評価方法 - Google Patents
静電耐圧評価装置および静電耐圧評価方法 Download PDFInfo
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- JP4391512B2 JP4391512B2 JP2006286903A JP2006286903A JP4391512B2 JP 4391512 B2 JP4391512 B2 JP 4391512B2 JP 2006286903 A JP2006286903 A JP 2006286903A JP 2006286903 A JP2006286903 A JP 2006286903A JP 4391512 B2 JP4391512 B2 JP 4391512B2
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- withstand voltage
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- electrostatic withstand
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- 238000011156 evaluation Methods 0.000 title claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000005259 measurement Methods 0.000 claims description 35
- 239000004973 liquid crystal related substance Substances 0.000 description 61
- 230000015556 catabolic process Effects 0.000 description 52
- 239000003990 capacitor Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 239000005001 laminate film Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000007599 discharging Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000013210 evaluation model Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
- G01R31/002—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing where the device under test is an electronic circuit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/04—Display protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
11 スイッチ
12 コンデンサ(容量素子)
13 抵抗
14 インダクタ
15 第1接続部
16 第2接続部
51 共通接続部
52 被測定端子
100 液晶パネル(表示パネル)
108 ゲートライン
111 ソースライン
115 ラミネートフィルム
120 ソースドライバ(測定対象デバイス、表示駆動用半導体装置)
130 ゲートドライバ(測定対象デバイス、表示駆動用半導体装置)
Claims (6)
- 複数の入力端子および出力端子を備える測定対象デバイスの静電耐圧を評価する静電耐圧評価装置において、
上記入力端子または出力端子に接続可能となっており、上記測定対象デバイスに電荷を付与する第1接続部と、
当該第1接続部が接続された端子とは異なる端子に接続可能、かつ、接続した端子を接地可能とする第2接続部とを備え、パルス性の電荷を付与する印加手段と、
上記測定対象デバイスの複数の出力端子に接続可能となっており、かつ、これら複数の出力端子を電気的に1つにまとめる共通接続部とを備えており、
上記測定対象デバイスの出力端子には、上記共通接続部を介して第1接続部または第2接続部を接続するようになっており、
上記出力端子に接続された接続部とは異なる接続部は、上記入力端子のいずれか1つに選択的に接続可能であり、
上記測定対象デバイスは、表示パネルに備えられる表示駆動用半導体装置であり、
上記印加手段は、電荷を蓄える容量素子を備えており、
当該容量素子の容量は、上記表示駆動用半導体装置が上記表示パネルに備えられる場合に当該表示パネルが帯電したときに蓄積される電荷量に基づいて、当該電荷量と等価となるように設定可能となっていることを特徴とする静電耐圧評価装置。 - 上記印加手段は、上記表示駆動用半導体装置が上記表示パネルに備えられる場合の当該表示パネルの内部インピーダンスに基づいて、当該内部インピーダンスと等価となるように設定可能なインピーダンスを有するインピーダンス素子を備えていることを特徴とする請求項1に記載の静電耐圧評価装置。
- 上記容量素子は、容量が1pF〜1μFであることを特徴とする請求項1に記載の静電耐圧評価装置。
- 上記インピーダンスは、1Ω〜100Ωの抵抗により設けられていることを特徴とする請求項2に記載の静電耐圧評価装置。
- さらに、上記インピーダンスには、直列に接続される0.1μH〜10μHのインダクタが含まれることを特徴とする請求項4に記載の静電耐圧評価装置。
- 複数の入力端子および出力端子を備える測定対象デバイスの静電耐圧を評価する静電耐圧評価方法において、
上記複数の出力端子を電気的に1つにまとめる共通接続部を、当該複数の出力端子に接続するステップと、
上記入力端子および共通接続部を介した出力端子の何れか一方の端子に、パルス性の電荷を付与するとともに、他方の端子を接地するステップとを含み、
上記測定対象デバイスは、表示パネルに備えられる表示駆動用半導体装置であり、
上記共通接続部を介した出力端子にパルス性の電荷を付与する場合、上記入力端子のいずれか1つを選択的に接地し、
上記共通接続部を介した出力端子を接地する場合、上記入力端子のいずれか1つに選択的にパルス性の電荷を付与することを特徴とする静電耐圧評価方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006286903A JP4391512B2 (ja) | 2006-10-20 | 2006-10-20 | 静電耐圧評価装置および静電耐圧評価方法 |
CN2007800387648A CN101529263B (zh) | 2006-10-20 | 2007-10-17 | 静电放电耐受能力评价装置和静电放电耐受能力评价方法 |
PCT/JP2007/070259 WO2008047837A1 (fr) | 2006-10-20 | 2007-10-17 | Dispositif d'évaluation de tension de résistance à une décharge électrostatique et tension de résistance à une décharge électrostatique |
US12/311,857 US7990170B2 (en) | 2006-10-20 | 2007-10-17 | Electrostatic discharge withstand voltage evaluating device and electrostatic discharge withstand voltage evaluating method |
TW096139337A TWI352816B (en) | 2006-10-20 | 2007-10-19 | Electrostatic breakdown voltage evaluation apparat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006286903A JP4391512B2 (ja) | 2006-10-20 | 2006-10-20 | 静電耐圧評価装置および静電耐圧評価方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008102101A JP2008102101A (ja) | 2008-05-01 |
JP4391512B2 true JP4391512B2 (ja) | 2009-12-24 |
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JP2006286903A Active JP4391512B2 (ja) | 2006-10-20 | 2006-10-20 | 静電耐圧評価装置および静電耐圧評価方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7990170B2 (ja) |
JP (1) | JP4391512B2 (ja) |
CN (1) | CN101529263B (ja) |
TW (1) | TWI352816B (ja) |
WO (1) | WO2008047837A1 (ja) |
Families Citing this family (13)
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TWI340831B (en) * | 2007-09-17 | 2011-04-21 | Chimei Innolux Corp | Measuring system and method |
TWI375809B (en) * | 2008-04-07 | 2012-11-01 | King Yuan Electronics Co Ltd | Method for continuity test of integrated circuit |
JP5327551B2 (ja) * | 2008-04-21 | 2013-10-30 | オー・エイチ・ティー株式会社 | 回路検査装置及びその回路検査方法 |
TWI424170B (zh) * | 2010-03-12 | 2014-01-21 | Univ Southern Taiwan Tech | 快速判別發光二極體抗靜電能力之方法 |
TWI442069B (zh) * | 2011-04-27 | 2014-06-21 | Sharp Kk | High voltage inspection device |
JP5244212B2 (ja) * | 2011-04-27 | 2013-07-24 | シャープ株式会社 | 高電圧検査装置 |
JP5244211B2 (ja) * | 2011-04-27 | 2013-07-24 | シャープ株式会社 | 高電圧検査装置 |
JP5351214B2 (ja) * | 2011-06-17 | 2013-11-27 | シャープ株式会社 | リペア装置およびリペア方法、デバイスの製造方法 |
WO2013150732A1 (ja) * | 2012-04-04 | 2013-10-10 | シャープ株式会社 | Esd試験検査装置およびesd試験検査方法 |
CN102937689B (zh) * | 2012-11-23 | 2015-04-01 | 深圳市华星光电技术有限公司 | Esd保护芯片数码显示检测系统 |
CN107844010A (zh) * | 2017-11-21 | 2018-03-27 | 武汉华星光电半导体显示技术有限公司 | 阵列基板以及显示装置 |
CN109285510B (zh) * | 2018-09-11 | 2021-04-02 | 重庆惠科金渝光电科技有限公司 | 一种显示器、显示装置和接地电阻调节方法 |
CN111295030B (zh) * | 2020-03-24 | 2023-05-09 | 朔黄铁路发展有限责任公司 | 多功能放电棒 |
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2006
- 2006-10-20 JP JP2006286903A patent/JP4391512B2/ja active Active
-
2007
- 2007-10-17 US US12/311,857 patent/US7990170B2/en active Active
- 2007-10-17 WO PCT/JP2007/070259 patent/WO2008047837A1/ja active Application Filing
- 2007-10-17 CN CN2007800387648A patent/CN101529263B/zh active Active
- 2007-10-19 TW TW096139337A patent/TWI352816B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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TW200831925A (en) | 2008-08-01 |
JP2008102101A (ja) | 2008-05-01 |
US20100301892A1 (en) | 2010-12-02 |
TWI352816B (en) | 2011-11-21 |
US7990170B2 (en) | 2011-08-02 |
CN101529263B (zh) | 2012-08-22 |
WO2008047837A1 (fr) | 2008-04-24 |
CN101529263A (zh) | 2009-09-09 |
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