JPS5780577A - Testing method of semiconductor - Google Patents

Testing method of semiconductor

Info

Publication number
JPS5780577A
JPS5780577A JP15687380A JP15687380A JPS5780577A JP S5780577 A JPS5780577 A JP S5780577A JP 15687380 A JP15687380 A JP 15687380A JP 15687380 A JP15687380 A JP 15687380A JP S5780577 A JPS5780577 A JP S5780577A
Authority
JP
Japan
Prior art keywords
semiconductor
potential
electrode
current stress
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15687380A
Other languages
Japanese (ja)
Other versions
JPS645265B2 (en
Inventor
Masaharu Takeuchi
Keiichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15687380A priority Critical patent/JPS5780577A/en
Publication of JPS5780577A publication Critical patent/JPS5780577A/en
Publication of JPS645265B2 publication Critical patent/JPS645265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
    • G01R31/002—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing where the device under test is an electronic circuit

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To detect a current stress as generated with the intense movement of electric charges given to a semiconductor by a method wherein an outside electrode of the semiconductor device is contacted as electrode having a certain potential after the insulated case thereof is charged with a high potential static electricity. CONSTITUTION:A semiconductor device 1 is left for a period of time required until the overall voltage becomes uniform with a contact electrode 7 contacting an insulated case 6 leaving a switch 8 open. Then, with the closing of the switch 8, a potential difference is given between an outside electrode 2 and other parts of the semiconductor 1. At this moment, an electric charge moves within the semiconductor 1 and applies a current stress thereon. This allows the simulation of current stress with the movement of the electric charge when a semiconductor charged at a certain potential contacts an object with another potential among transportation of the semiconductor, or the like. Thus, it is possible to test the breakdown strength of the semiconductor against the static electricity.
JP15687380A 1980-11-06 1980-11-06 Testing method of semiconductor Granted JPS5780577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15687380A JPS5780577A (en) 1980-11-06 1980-11-06 Testing method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15687380A JPS5780577A (en) 1980-11-06 1980-11-06 Testing method of semiconductor

Publications (2)

Publication Number Publication Date
JPS5780577A true JPS5780577A (en) 1982-05-20
JPS645265B2 JPS645265B2 (en) 1989-01-30

Family

ID=15637250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15687380A Granted JPS5780577A (en) 1980-11-06 1980-11-06 Testing method of semiconductor

Country Status (1)

Country Link
JP (1) JPS5780577A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231458A (en) * 1983-06-15 1984-12-26 Hitachi Micro Comput Eng Ltd Electrostatic destruction testing method
JPS6022332A (en) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp Testing of semiconductor device
JPS6073375A (en) * 1983-09-30 1985-04-25 Oki Electric Ind Co Ltd Method of testing semiconductor apparatus
JPH0315773A (en) * 1990-06-15 1991-01-24 Hitachi Ltd Electrostatic breakdown test equipment for semiconductor device
EP0682264A2 (en) * 1994-05-14 1995-11-15 Gunter Langer Procedure for determining the emi-qualities of integrated circuits and appliance for executing the procedure
JP2003027822A (en) * 2001-07-16 2003-01-29 Misawa Homes Co Ltd Rail structure of window sash and method for reproducing window sash
US7990170B2 (en) 2006-10-20 2011-08-02 Sharp Kabushiki Kaihsa Electrostatic discharge withstand voltage evaluating device and electrostatic discharge withstand voltage evaluating method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231458A (en) * 1983-06-15 1984-12-26 Hitachi Micro Comput Eng Ltd Electrostatic destruction testing method
JPH0480349B2 (en) * 1983-06-15 1992-12-18 Hitachi Maikon Shisutemu Kk
JPS6022332A (en) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp Testing of semiconductor device
JPS6073375A (en) * 1983-09-30 1985-04-25 Oki Electric Ind Co Ltd Method of testing semiconductor apparatus
US4636724A (en) * 1983-09-30 1987-01-13 Oki Electric Industry Co., Ltd. Method and apparatus for examining electrostatic discharge damage to semiconductor devices
JPH0146833B2 (en) * 1983-09-30 1989-10-11 Oki Electric Ind Co Ltd
JPH0315773A (en) * 1990-06-15 1991-01-24 Hitachi Ltd Electrostatic breakdown test equipment for semiconductor device
JPH05668B2 (en) * 1990-06-15 1993-01-06 Hitachi Seisakusho Kk
EP0682264A2 (en) * 1994-05-14 1995-11-15 Gunter Langer Procedure for determining the emi-qualities of integrated circuits and appliance for executing the procedure
EP0682264A3 (en) * 1994-05-14 1997-05-07 Langer Guenter Procedure for determining the emi-qualities of integrated circuits and appliance for executing the procedure.
JP2003027822A (en) * 2001-07-16 2003-01-29 Misawa Homes Co Ltd Rail structure of window sash and method for reproducing window sash
US7990170B2 (en) 2006-10-20 2011-08-02 Sharp Kabushiki Kaihsa Electrostatic discharge withstand voltage evaluating device and electrostatic discharge withstand voltage evaluating method

Also Published As

Publication number Publication date
JPS645265B2 (en) 1989-01-30

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