JP4373919B2 - 薄膜トランジスタアレイ基板及びその製造方法 - Google Patents
薄膜トランジスタアレイ基板及びその製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 136
- 238000005530 etching Methods 0.000 claims description 74
- 239000004065 semiconductor Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 description 15
- 230000003068 static effect Effects 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Description
本発明の実施例による薄膜トランジスタアレイ基板及びその製造方法では、半導体層とデータ配線を一つの感光膜パターンを利用した写真エッチング工程で形成し、これについて図面を参照して詳細に説明する。
図1は、本発明の第1実施例による液晶表示装置用薄膜トランジスタ基板の配置図であり、図2乃至図4は、図1に示した薄膜トランジスタアレイ基板のII−II´、III−III´及びIV−IV´線による各々の断面図である。
一方、半導体パターン152は、薄膜トランジスタのチャンネル部(C)を除けば、データ配線171、173、175、179、第2静電気保護用配線174、178、及び抵抗性接触層パターン163、165と同一な模様をしている。具体的には、薄膜トランジスタのチャンネル部(C)でデータ線部171、179、173、特にソース電極173とドレイン電極175とが分離されており、データ線抵抗性接触層163とドレイン電極用抵抗性接触層パターン165も分離されているが、薄膜トランジスタ用半導体パターン152はここで切れずに連結されて、薄膜トランジスタのチャンネルを生成する。
まず、図5A乃至5Dに図示したように、絶縁基板110の上部に、モリブデンもしくはモリブデン合金又はクロムなどの下部膜201と、アルミニウム又はアルミニウム合金などの上部膜202とを順に積層し、マスクを利用した写真エッチング工程で上部膜202と下部膜201を共にパターニングして、ゲート線121、ゲート電極123、及びゲートパッド125を含むゲート配線と、ゲート短絡線128及び静電気保護用連結線124を含む第1静電気保護用配線と、維持電極線131及び維持電極133を含む維持配線とをテーパ構造に形成する。
96 静電気保護用連結パターン
97 補助データパッド
110 絶縁基板
111 データ線
121 ゲート線
123 ゲート電極
125 ゲートパッド
133 維持電極
140 ゲート絶縁膜
150 半導体層
152 半導体パターン
158 エッチング補助用パターン
160 中間層
163 抵抗性接触層パターン
165 中間層パターン
168 ソース/ドレイン抵抗性接触層パターン
170 導電体層
173 ソース電極
174 静電気保護用連結線
175 ドレイン電極
178 データ短絡線
178’ エッチング補助層
179 データパッド
180 保護膜
182、184、185、186、189 接触孔
190 画素電極
201、701 下部膜
202、702 上部膜
212、214 感光膜パターン
Claims (4)
- 基板上にゲート線及びゲート電極を含むゲート配線を形成する段階と、
前記基板及び前記ゲート配線上にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜の上部に半導体層、クロム、モリブデン又はモリブデン合金からなる下部膜及び銀、銀合金、アルミニウム又はアルミニウム合金からなる上部膜を順次形成する段階と、
前記下部膜及び上部膜をパターニングすることにより、ソース/ドレイン用導電体パターン及びエッチング補助層を形成する段階と、
前記半導体層をパターニングすることにより、半導体パターン及びエッチング補助用パターンを形成する段階と、
湿式エッチングで前記エッチング補助層を除去しながら前記ソース/ドレイン用導電体パターンの一部をエッチングして、ソース電極及びドレイン電極を含むデータ配線を形成する段階と、及び
前記ドレイン電極に連結される画素電極を形成する段階とを含み、
前記湿式エッチングは、前記下部膜と前記上部膜とでガルバニ電池をなすエッチング液を用いて行われ、前記エッチング液に対して露出された前記下部膜の面積が前記上部膜の面積の3倍より大きくなるように前記エッチング補助層及び前記エッチング補助用パターンを形成することを特徴とする薄膜トランジスタアレイ基板の製造方法。 - 前記ソース/ドレイン用導電体パターン及びエッチング補助層を形成する段階、及び、前記半導体パターン及びエッチング補助用パターンを形成する段階は、第1感光膜パターンを利用したエッチング工程によって行われ、
前記第1感光膜パターンは、第1厚さを有する第1部分と、前記第1厚さより厚い第2部分からなり、前記第1部分は、薄膜トランジスタのチャネル部及び前記エッチング補助層に対応し、前記第2部分は、前記ソース電極及びドレイン電極を含むデータ配線に対応し、
前記ソース電極及びドレイン電極を含むデータ配線を形成する段階は、前記第1感光膜パターンをアッシング又はエッチ・バックすることによって、前記第1部分を除去し、前記第2部分を残した第2感光膜パターンを利用したエッチング工程によって行われる請求項1に記載の薄膜トランジスタ基板の製造方法。 - 前記第1感光膜パターンを利用したエッチング工程に用いられるマスクは、光が一部だけ透過できる第1部分と、光が完全にブロックされる第2部分、及び光が完全に透過できる第3部分とを含み、
前記第1感光膜パターンは陽性感光膜であり、前記マスクの第1、第2部分は、露光過程で前記第1感光膜パターンの第1、第2部分に各々対応するように整列される請求項2に記載の薄膜トランジスタ基板の製造方法。 - 前記半導体層と下部膜との間に接触層を形成する段階と、
前記接触層をパターニングすることにより、前記半導体パターンと前記ソース電極及びドレイン電極を含むデータ配線の間に接触層パターンを形成する段階とをさらに含み、
前記第1感光膜パターン及び前記第2感光膜パターンを利用したエッチング工程によって前記接触層パターンを形成する請求項2に記載の薄膜トランジスタ基板の製造方法。
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KR1020020062409A KR100878242B1 (ko) | 2002-10-14 | 2002-10-14 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
PCT/KR2003/000146 WO2004036303A1 (en) | 2002-10-14 | 2003-01-23 | A thin film translator array panel and a method for manufacturing the panel |
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CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
KR101087398B1 (ko) * | 2004-06-30 | 2011-11-25 | 엘지디스플레이 주식회사 | 액정표시장치의 패드 구조 및 그 제조방법 |
JP4685154B2 (ja) * | 2006-02-24 | 2011-05-18 | シャープ株式会社 | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
KR101587936B1 (ko) * | 2009-10-26 | 2016-01-25 | 삼성디스플레이 주식회사 | 표시 장치용 모기판 및 이의 제조 방법 |
TWI467673B (zh) * | 2011-06-09 | 2015-01-01 | Chunghwa Picture Tubes Ltd | 配線裝置與顯示器 |
TWI460516B (zh) * | 2012-10-23 | 2014-11-11 | Au Optronics Corp | 畫素結構及其製作方法 |
CN103928453B (zh) * | 2013-01-11 | 2016-09-28 | 北京京东方光电科技有限公司 | 一种阵列基板及其制造方法 |
CN104951594B (zh) * | 2015-05-28 | 2023-07-21 | 格科微电子(上海)有限公司 | 集成电路的布线方法以及集成电路结构 |
CN107706196B (zh) * | 2017-09-28 | 2021-05-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
WO2022082636A1 (zh) * | 2020-10-22 | 2022-04-28 | 京东方科技集团股份有限公司 | 显示背板及其制造方法、显示面板及其制造方法 |
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US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
JPH03148636A (ja) * | 1989-11-06 | 1991-06-25 | Toshiba Corp | アクティブマトリクス型液晶表示素子の製造方法 |
KR100213191B1 (ko) * | 1995-12-30 | 1999-08-02 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
KR100271037B1 (ko) * | 1997-09-05 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same) |
KR100312259B1 (ko) * | 1999-02-05 | 2001-11-03 | 구본준, 론 위라하디락사 | 액정표시장치의 불량패턴 제거방법 및 액정표시장치 구조 |
KR100312757B1 (ko) * | 1999-02-08 | 2001-11-03 | 윤종용 | 박막 트랜지스터 기판의 제조 방법 및 박막의 사진 식각 방법 |
KR100537879B1 (ko) * | 1999-04-01 | 2005-12-20 | 삼성전자주식회사 | 박막 트랜지스터의 제조 방법 및 이를 포함하는 액정 표시 장치용 기판의 제조 방법 |
KR100333983B1 (ko) * | 1999-05-13 | 2002-04-26 | 윤종용 | 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법 |
JP4102912B2 (ja) | 1999-11-24 | 2008-06-18 | カシオ計算機株式会社 | アクティブ型液晶表示パネル |
KR100590755B1 (ko) * | 2000-01-20 | 2006-06-15 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
KR100646790B1 (ko) * | 2000-07-14 | 2006-11-17 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR100796746B1 (ko) * | 2001-03-13 | 2008-01-22 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
JP4398601B2 (ja) * | 2001-05-18 | 2010-01-13 | エーユー オプトロニクス コーポレイション | 薄膜トランジスタ・アレイ基板、薄膜トランジスタ・アレイ基板の製造方法および表示装置 |
-
2002
- 2002-10-14 KR KR1020020062409A patent/KR100878242B1/ko not_active IP Right Cessation
-
2003
- 2003-01-23 JP JP2004545011A patent/JP4373919B2/ja not_active Expired - Fee Related
- 2003-01-23 WO PCT/KR2003/000146 patent/WO2004036303A1/en active Application Filing
- 2003-01-23 US US10/531,442 patent/US7605416B2/en not_active Expired - Fee Related
- 2003-01-23 AU AU2003206173A patent/AU2003206173A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2006503435A (ja) | 2006-01-26 |
WO2004036303A1 (en) | 2004-04-29 |
KR20040033354A (ko) | 2004-04-28 |
US7605416B2 (en) | 2009-10-20 |
KR100878242B1 (ko) | 2009-01-13 |
AU2003206173A1 (en) | 2004-05-04 |
US20060194368A1 (en) | 2006-08-31 |
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