JP4358568B2 - Electroplating apparatus and electroplating method for electronic parts - Google Patents

Electroplating apparatus and electroplating method for electronic parts Download PDF

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JP4358568B2
JP4358568B2 JP2003276539A JP2003276539A JP4358568B2 JP 4358568 B2 JP4358568 B2 JP 4358568B2 JP 2003276539 A JP2003276539 A JP 2003276539A JP 2003276539 A JP2003276539 A JP 2003276539A JP 4358568 B2 JP4358568 B2 JP 4358568B2
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plating
drum
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insulating plate
plating drum
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俊秀 吉田
英二 神谷
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Kamaya Electric Co Ltd
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本発明は、電子部品の電気めっき装置及び電気めっき方法に関する。   The present invention relates to an electroplating apparatus and electroplating method for electronic components.

従来の電気めっき装置としては、特開平10−195698号公報(特許文献1)に記載されたものがあり、この電気めっき装置は、上端部が開口するバレルがめっき槽内で斜め上向きに傾斜した姿勢で支持され、該バレルにはめっき槽に貯留されためっき液の一部が注入されるように、めっき液供給手段が設けられている。そして、この電気めっき装置では、被めっき物を収容したバレルの一部がめっき槽内のめっき液中に浸漬された状態でバレルが回転され、めっき液供給手段からバレル内にめっき液が注入されて、被めっき物にめっき膜が形成される。   As a conventional electroplating apparatus, there is one described in Japanese Patent Application Laid-Open No. 10-195698 (Patent Document 1). In this electroplating apparatus, a barrel whose upper end is open is inclined obliquely upward in a plating tank. A plating solution supply means is provided so that a part of the plating solution stored in the plating tank is poured into the barrel supported by the posture. In this electroplating apparatus, the barrel is rotated with a part of the barrel containing the object to be plated immersed in the plating solution in the plating tank, and the plating solution is injected into the barrel from the plating solution supply means. Thus, a plating film is formed on the object to be plated.

また特許文献1には、電気めっき装置の他の実施態様も記載されており、これは、壁面にめっき液を流通させる複数の透孔を備えた筒状のバレルがめっき槽内で水平に支持され、めっき槽に貯留されためっき液の一部をバレルに注入するためのめっき液供給手段が設けられたものである。そして、この電気めっき装置でも、上記と同様にバレルが回転され、バレル内にめっき液が注入されて被めっき物にめっき膜が形成される。   Patent Document 1 also describes another embodiment of an electroplating apparatus, which is supported by a cylindrical barrel having a plurality of through holes for allowing a plating solution to flow through a wall surface in a plating tank. And a plating solution supply means for injecting a part of the plating solution stored in the plating tank into the barrel. In this electroplating apparatus, the barrel is rotated in the same manner as described above, and a plating solution is injected into the barrel to form a plating film on the object to be plated.

次に、特開平08−239799号公報(特許文献2)には、垂直の駆動軸の上端に固定された水平な円形の底板と、この底板に外周の取付けフランジが固定され中央に開口を有し、底板との間に半径方向外方へ行くにつれて低くなるか又は円筒状の処理室を形成するカバーと、底板と取付けフランジの間に挟持される連続または間欠接触用の通電用の接触リングと、この接触リングの近傍に配置され処理液のみを通す多孔体窓と、開口より処理液等を処理室に供給する供給管と、多孔体窓から飛散した処理液を受ける容器と、容器に溜まった処理液を供給管へ送るポンプと、開口から挿入されてめっき液に接触する電極とを有する電気めっき装置が記載されており、めっき工程中にめっき処理室を繰り返し回転、減速、停止させて、被めっき物にめっき膜を形成している。   Next, Japanese Patent Laid-Open No. 08-239799 (Patent Document 2) discloses a horizontal circular bottom plate fixed to the upper end of a vertical drive shaft, and an outer peripheral mounting flange fixed to the bottom plate and having an opening in the center. And a contact ring for energization for continuous or intermittent contact sandwiched between the bottom plate and the mounting flange, and a cover that forms a processing chamber that is lowered or cylindrically formed in the radial direction between the bottom plate and the bottom plate A porous window that is disposed in the vicinity of the contact ring and passes only the processing liquid, a supply pipe that supplies the processing liquid and the like to the processing chamber through the opening, a container that receives the processing liquid scattered from the porous window, and a container An electroplating apparatus is described that has a pump that feeds the accumulated processing solution to the supply pipe and an electrode that is inserted through the opening and contacts the plating solution. The plating process chamber is repeatedly rotated, decelerated, and stopped during the plating process. And covered Forming a plating film on the object.

特開平10−195698号公報JP-A-10-195698 特開平08−239799号公報Japanese Patent Laid-Open No. 08-239799

しかしながら、特許文献1に記載された装置では、めっき液中で傾斜姿勢または水平姿勢で支持されたバレル槽内に、被めっき物に接触するような陰極の先端部、いわゆるダンギュラを有するケーブルを挿入し、かつ被めっき物と解砕を促すメディア(スチール製小球、ステンレスやジルコニアなどの硬いダミー粒子)を同時に投入したうえ、陽極を配置しためっき液にバレル槽の一部又は全部を浸漬して緩やかに一方向に回転させて、被めっき物とメディアの混合・攪拌に伴なうダンギュラとの接触通電の機会を捉えて、めっき膜を形成するバレルめっき方式であり、これは外形と自重が比較的大きな被めっき物へのめっき膜形成には好適であるとされている。
しかしながら、このバレルめっき方式は、めっき装置の簡略化が可能な反面、特に、小型な被めっき物は自重が軽く、めっき液の浮力も受け易いので、この対応策として、被めっき物よりも小粒なメディアを被めっき物よりも多量に投入した試みも行なわれているが、小型及び小粒であるが故に電流密度の過多及び過小な部位の発生が避けられず、電流密度の過多な部位では、めっき析出の成長過多によるめっき凝集、かつ被めっき物の浮きなどの甚だしい離散もあって、安定しためっき膜が得られず、めっき処理経過に伴ない過剰に成長するメディア径の選別又は管理された一定の粒径の再投入を必要とし、また、めっき処理に長時間を必要とするなど、生産効率の低下、管理工数の増加が強いられている。
However, in the apparatus described in Patent Document 1, a cable having a so-called dangling tip, which is in contact with an object to be plated, is inserted into a barrel vessel supported in an inclined or horizontal position in a plating solution. At the same time, the material to be plated and the medium (hard steel particles such as stainless steel, zirconia, etc.) that facilitates crushing are added, and part or all of the barrel tank is immersed in the plating solution on which the anode is placed. This is a barrel plating method in which a plating film is formed by slowly rotating in one direction to capture the opportunity of contact energization between the workpiece and the dangula accompanying mixing and stirring of the media. Is suitable for forming a plating film on a relatively large workpiece.
However, while this barrel plating method can simplify the plating apparatus, in particular, a small object to be plated is light in weight and easily receives the buoyancy of the plating solution. Attempts have been made to put a large amount of media in a larger amount than the object to be plated, but because of the small size and small grains, excessive current density and generation of excessive parts are unavoidable, and in parts where the current density is excessive, Stable plating film could not be obtained due to plating aggregation due to excessive growth of plating precipitation and floating of the object to be plated, etc., and the media diameter that grows excessively with the progress of plating processing was selected or controlled A reduction in production efficiency and an increase in management man-hours are required, for example, a re-input of a certain particle size is required and a long time is required for the plating process.

また特許文献2に記載された装置では、小物に対するめっき膜の形成を目的とするものであるが、めっき液排出用の多孔窓を一体に結合してセルを形成しためっき処理室を回転させながら、上部開口よりめっき液を供給しつつ遠心力の働く周縁の多孔窓よりめっき液が排出することで、めっき膜を形成するが、めっき装置内部のめっき液の濃度が時間の経過と共に変化するのを防ぐために、めっき液の供給を電気ポンプと液面センサの組み合わせによって行なっているため、複雑な制御が必要となり、また、駆動モータとシャフトはめっき処理室の下に位置するため、めっき液の漏れや絶縁の処理など、構造も複雑となり、めっき装置も固定化して汎用性に乏しく、多大な設備投資が強いられていた。   In addition, the apparatus described in Patent Document 2 is intended to form a plating film for small objects, while rotating a plating processing chamber in which a porous window for discharging a plating solution is integrally connected to form a cell. A plating film is formed by discharging the plating solution from the peripheral porous window where centrifugal force works while supplying the plating solution from the upper opening, but the concentration of the plating solution inside the plating device changes over time. In order to prevent this, the plating solution is supplied by a combination of an electric pump and a liquid level sensor. Therefore, complicated control is required, and the drive motor and shaft are located under the plating process chamber. Structures such as leakage and insulation have become complicated, and the plating apparatus has been fixed, so that it has poor versatility.

なお、最近の携帯情報端末に観られる電子機器の軽薄短小化が進展するなか、回路基板に載置される角形、円筒形、円柱形等の形状を有する電子部品、例えば、抵抗、コンデンサ、インダクタ、サーミスタまたはヒューズなどのチップ形電子部品にあっても、これに呼応して形状や外形寸法が小型・薄型化しており、例えば、公称長さ×公称幅は、1.0mm×0.5mm、0.6mm×0.3mm、0.4mm×0.2mmといった推移で小型化が進展している。これらチップ形電子部品においては、電極に関する要求も厳格になっており、電極の専有面積も相対的に小さくなり、めっき膜も略均一な厚さを備え、かつ回路基板の電極ランドとの良好なはんだ付け性が要求されている。   In addition, electronic devices having a rectangular shape, a cylindrical shape, a cylindrical shape, and the like mounted on a circuit board, such as resistors, capacitors, inductors, etc., are being developed as electronic devices seen in recent portable information terminals are becoming lighter and thinner. Even in chip-type electronic components such as thermistors or fuses, the shape and outer dimensions are reduced in size and thickness in response to this, for example, nominal length x nominal width is 1.0 mm x 0.5 mm, Miniaturization is progressing with changes of 0.6 mm × 0.3 mm and 0.4 mm × 0.2 mm. In these chip-type electronic components, the requirements for the electrodes are stricter, the area occupied by the electrodes is relatively small, the plating film has a substantially uniform thickness, and the electrode land on the circuit board is good. Solderability is required.

本発明は、このような従来の問題を解決するものであり、形状及び外形寸法が極めて軽薄短小な電子部品であっても、メディアの投入を不要とし、めっき装置の構造も小型・簡略化することが可能であり、メンテナンスが容易で処理槽間での移動の汎用性に富み、所望するめっき膜を短時間に且つ略均一な厚さで確保し得る電子部品の電気めっき装置及び電気めっき方法を提供することを目的とする。   The present invention solves such a conventional problem, and even if the electronic components have extremely light and thin shapes and external dimensions, it is not necessary to insert media, and the structure of the plating apparatus is reduced in size and simplified. Electroplating apparatus and electroplating method for electronic components capable of ensuring a desired plating film in a short time and with a substantially uniform thickness The purpose is to provide.

上記課題を解決するために、本発明では、陽極が付設されためっき槽内において、めっきドラムが回転駆動され得るように駆動シャフトの下端に設けられ、該めっきドラムは、内壁に陰極リングが付設された絶縁リングと、該絶縁リングの底を密閉する底部絶縁板と、前記絶縁リングの上側に固定された上部絶縁板とを備え、該上部絶縁板には、めっきドラムが回転駆動されたときに作用する遠心力により、めっき液がめっきドラムの内部から外部へ流出すると共に外部から内部に流入するように貫通孔が設けられたものであることを特徴とする電子部品の電気めっき装置が提供される。
上記本発明の電気めっき装置において、めっきドラムは駆動シャフトの下端に取り付けられてめっき槽内に浸漬され、駆動シャフトはめっきドラムのみを回転駆動するものであるため、回転駆動系統の装置構成は比較的簡略なものにすることが可能であり、被めっき物である電子部品の仕様に応じて、めっきドラムの取り換えを行なうといったことも比較的容易に行い得るものである。また被めっき物の形状や外形寸法が軽薄短小であっても、本発明の装置では、めっきドラムを単に回転させるだけで、被めっき物を陰極リングに集めることができると共に、めっき液を上部絶縁板の孔からめっきドラム中に対流させることができるものであるため、形状や外形寸法が軽薄短小な電子部品に、略均一で所望の厚さのめっき膜を比較的確実に形成することが可能になる。
In order to solve the above problems, in the present invention, in a plating tank provided with an anode, the plating drum is provided at the lower end of the drive shaft so as to be driven to rotate, and the plating drum is provided with a cathode ring on the inner wall. An insulating ring, a bottom insulating plate that seals a bottom of the insulating ring, and an upper insulating plate fixed to the upper side of the insulating ring, and the upper insulating plate is rotated when the plating drum is driven to rotate. Provided with an electroplating device for electronic parts, wherein a through hole is provided so that the plating solution flows from the inside of the plating drum to the outside and flows from the outside to the inside by the centrifugal force acting on Is done.
In the electroplating apparatus of the present invention, the plating drum is attached to the lower end of the drive shaft and immersed in the plating tank, and the drive shaft rotates only the plating drum. The plating drum can be replaced relatively easily in accordance with the specifications of the electronic component that is the object to be plated. Moreover, even if the shape and outer dimensions of the object to be plated are light, thin and small, the apparatus of the present invention can collect the object to be plated on the cathode ring by simply rotating the plating drum, and the plating solution can be insulated from the upper part. Since it can be convected from the hole in the plate into the plating drum, it is possible to relatively reliably form a plating film with a desired thickness and a uniform thickness on electronic components with light and thin shapes and external dimensions. become.

また本発明の電子部品の電気めっき装置では、前記上部絶縁の貫通孔が、第一貫通孔と第二貫通孔とで構成され、前記第一貫通孔は、めっき液が前記陰極リングよりも内側で同心円状にめっきドラム内から流出するように前記陰極リングから所定長離間した位置に少なくとも1つ設けられ、該第二貫通孔は、前記第一貫通孔よりも内側でめっきドラム内にめっき液が流入するように設けることができる。
ここで、前記第一貫通孔と前記陰極リングとの離間長さと、陰極リングの内周面における電流密度との関係について言及すれば、両者が近接して設けられた場合、めっきドラムを回転駆動させながら通電すると、陰極リングの内周面では局部的に電流密度が高くなり、ここに過剰なめっきが析出して貫通孔を塞ぐといった問題を生じ易くなる。一方、両者が適度に離間されて設けられている場合、同様に、めっきドラムを回転駆動させながら通電しても、陰極リングの内周面では電流密度がほぼ均一になるため、電子部品には、所望の厚さで略均一のめっき膜を比較的確実に形成することが可能である。
したがって、本発明の電気めっき装置において、前記第一貫通孔と前記陰極リングとの離間長さは、めっきドラムを回転駆動させながら通電したときに、陰極リングの内周面における電流密度がほぼ均一になるような長さに設定されるものである。
以上の構成の電気めっき装置では、めっき液が流出する第一貫通孔の近傍と陰極リングの内周上頂部での電流密度過多を緩和して、陰極リングの内周面において安定した電流密度を得ることができる。また、陽極がめっきドラムの外延に付設してあっても、陰極リングよりも内側で所定長離間した位置に、めっき液流出のための第一貫通孔を設けているので、第一貫通孔付近に過剰にめっきが析出することが防止され得るものであり、めっき槽内でめっきドラムを回転させると、第一貫通孔からはめっき液が流出し、第二貫通孔からはめっき液が流入することで、めっき液のめっきドラム内における対流が促され、めっきドラム内の特に陰極リング近傍におけるめっき液のメタル濃度低下を抑制することができる。
In the electronic component electroplating apparatus according to the present invention, the upper insulating through hole is composed of a first through hole and a second through hole, and the first through hole has a plating solution inside the cathode ring. At least one of the second through holes is provided at a position spaced apart from the cathode ring by a predetermined length so as to flow out of the plating drum concentrically, and the second through hole is disposed inside the plating drum inside the first through hole. Can flow in.
Here, referring to the relationship between the distance between the first through hole and the cathode ring and the current density on the inner peripheral surface of the cathode ring, the plating drum is driven to rotate when both are provided close to each other. When energized, the current density is locally increased on the inner peripheral surface of the cathode ring, and it is easy to cause a problem that excessive plating precipitates and blocks the through-hole. On the other hand, when both are provided with a moderate separation, the current density is substantially uniform on the inner peripheral surface of the cathode ring even if the plating drum is energized while being rotationally driven. It is possible to relatively reliably form a substantially uniform plating film with a desired thickness.
Therefore, in the electroplating apparatus of the present invention, the separation distance between the first through hole and the cathode ring is such that the current density on the inner peripheral surface of the cathode ring is substantially uniform when energized while rotating the plating drum. Is set to a length such that
In the electroplating apparatus having the above-described configuration, the current density excess in the vicinity of the first through hole from which the plating solution flows out and at the top of the inner periphery of the cathode ring is alleviated, and a stable current density is achieved on the inner peripheral surface of the cathode ring. Obtainable. In addition, even if the anode is attached to the outside of the plating drum, the first through hole for the plating solution outflow is provided at a position spaced apart by a predetermined length inside the cathode ring, so the vicinity of the first through hole The plating solution can be prevented from being excessively deposited on the plating tank. When the plating drum is rotated in the plating tank, the plating solution flows out from the first through hole and the plating solution flows from the second through hole. Thus, convection of the plating solution in the plating drum is promoted, and a decrease in the metal concentration of the plating solution in the plating drum, particularly in the vicinity of the cathode ring, can be suppressed.

本発明の電気めっき装置では、前記底部絶縁板に、めっきドラムの回転中心に向けて下り傾斜に形成された面を設けても良い。
上記本発明の電気めっき装置は、めっきドラムが徐速、定速、減速、停止のサイクルで正逆両方向に回転制御されるものであるため、めっきドラムが定速回転しているときには、被めっき物は遠心力を受けて陰極リングに集合して接触通電しているが、めっきドラムが減速されて停止するまでの過程では、遠心力の低下に伴なって被めっき物が下り傾斜面に沿って陰極リングから離れる方向に移動し、このときに被めっき物の攪拌・混合が促進される。逆に、めっきドラムが徐速されて定速回転に至るまでの過程では、遠心力の増加に伴なって被めっき物が攪拌・混合されながら再び陰極リングまで移動する。このような被めっき物の攪拌・混合作用により、めっき膜は、被めっき物毎にバラツキがほとんど生じず、それぞれに所望の厚さで略均一のめっき膜を形成することが可能になる。
In the electroplating apparatus of the present invention, the bottom insulating plate may be provided with a surface formed to be inclined downward toward the rotation center of the plating drum.
In the electroplating apparatus of the present invention, since the plating drum is controlled to rotate in both forward and reverse directions in a cycle of slow speed, constant speed, deceleration, and stop, when the plating drum rotates at a constant speed, The object is subjected to centrifugal force and gathers in the cathode ring and is energized in contact. However, in the process until the plating drum is decelerated and stopped, the object to be plated moves along the downward inclined surface as the centrifugal force decreases. Then, it moves in a direction away from the cathode ring, and at this time, stirring and mixing of the object to be plated is promoted. On the other hand, in the process from the slowing of the plating drum to the constant speed rotation, the object to be plated moves again to the cathode ring while being stirred and mixed as the centrifugal force increases. By such a stirring / mixing action of the object to be plated, the plating film hardly varies from object to object, and it becomes possible to form a substantially uniform plating film with a desired thickness for each object.

本発明の電気めっき装置では、前記第二貫通孔からのめっき液の逆流を防止するように逆流防止弁を設けても良い。
このように逆流防止弁を設ければ、めっきドラムを正回転から逆回転に移行したり、または逆回転から正回転に移行するときに、めっき液や被めっき物が第二貫通孔から流出する可能性を極めて小さなものにできる。
In the electroplating apparatus of the present invention, a backflow prevention valve may be provided so as to prevent backflow of the plating solution from the second through hole.
If the backflow prevention valve is provided in this way, the plating solution or the object to be plated flows out from the second through hole when the plating drum shifts from the normal rotation to the reverse rotation or when the plating drum shifts from the reverse rotation to the normal rotation. The possibility can be made extremely small.

本発明の電気めっき装置では、めっきドラムの直径をめっきドラムの回転軸方向の長さよりも大きくしても良い。このように構成によれば、めっきドラムの小型化・簡略化が図られる。すなわち、被めっき物が、軽薄短小な形状や外形寸法を有する小型のチップ形電子部品である場合には、めっきドラムの回転軸方向の長さを比較的短くしても、めっき膜を形成するという点においては充分な効果が得られるものであり、しかも、電気めっき装置の小型化・簡略化も可能にするものである。   In the electroplating apparatus of the present invention, the diameter of the plating drum may be larger than the length of the plating drum in the rotation axis direction. According to this configuration, the plating drum can be reduced in size and simplified. That is, when the object to be plated is a small chip-type electronic component having a light, thin and small shape and external dimensions, the plating film is formed even if the length of the plating drum in the rotation axis direction is relatively short. In this respect, a sufficient effect can be obtained, and the electroplating apparatus can be reduced in size and simplified.

本発明の電気めっき装置では、前記駆動シャフトの内面に、めっき槽と前記めっきドラム内のめっき液の循環を促すようにめっき液導入貫通孔を備える構成にしても良い。このような構成によれば、めっきドラムの容積と被めっき物の量に応じて、めっき液の対流・循環を強制的に促進することが可能になる。   In the electroplating apparatus of the present invention, a plating solution introduction through hole may be provided on the inner surface of the drive shaft so as to promote the circulation of the plating solution in the plating tank and the plating drum. According to such a configuration, it becomes possible to forcibly promote the convection / circulation of the plating solution according to the volume of the plating drum and the amount of the object to be plated.

本発明の電気めっき装置において、前記上部絶縁板には、めっき液がめっきドラム内へ流入する貫通孔と、めっき液がめっきドラム内から流出する貫通孔とが、同じ貫通孔で共用されるように、前記陰極リングよりも内側に離間した位置に形成することも可能である。このように構成にすれば、軽薄短小な形状や外形寸法を有する小型のチップ形電子部品を被めっき物とする電気めっき装置において、めっきドラムの更なる小型化・簡略化が可能になる。   In the electroplating apparatus of the present invention, the upper insulating plate may share a through hole through which the plating solution flows into the plating drum and a through hole through which the plating solution flows out of the plating drum. It is also possible to form the cathode ring at a position separated from the inside of the cathode ring. With this configuration, it is possible to further reduce the size and simplify the plating drum in an electroplating apparatus that uses a small chip-type electronic component having a light, thin, small shape and external dimensions as an object to be plated.

本発明では、少なくとも、絶縁リングの内壁に付設した陰極リングと、絶縁リングの底を密閉する底部絶縁板と、前記陰極リングの内側へめっき液を出入りさせ得る貫通孔とを備えるめっきドラムに、被めっき物であるチップ形電子部品を収容し、陽極を付設しためっき槽中にめっきドラムを浸漬すると共に、前記底部絶縁板がほぼ水平となるようにめっきドラムを保持しながら回転駆動させ、該めっきドラムの回転遠心力により、前記めっき槽中と前記陰極リング内側でめっき液を対流させると共に前記陰極リングにチップ形電子部品を集合させて接触通電し、かつ該回転の徐速または減速及び停止による攪拌・混合と離散とを繰り返すことで所望のめっき膜を形成することを特徴とする電子部品の電気めっき方法が提供される。
本発明の電気めっき方法では、回転遠心力により、めっき液を対流させると共に陰極リングに被めっき物である電子部品を集合させ、かつ回転の徐速または減速及び停止による回転遠心力の増減変化により、被めっき物の攪拌・混合と離散とを繰り返し行なうものであるため、めっき膜は被めっき物ごとにバラツクことなく、略均一で所望の厚さに形成することが可能になった。
In the present invention, a plating drum provided with at least a cathode ring attached to the inner wall of the insulating ring, a bottom insulating plate that seals the bottom of the insulating ring, and a through hole that allows a plating solution to enter and exit the inside of the cathode ring, A chip-type electronic component, which is an object to be plated, is accommodated, the plating drum is immersed in a plating tank provided with an anode, and is rotated while holding the plating drum so that the bottom insulating plate is substantially horizontal. The plating solution is convected in the plating tank and inside the cathode ring by the rotating centrifugal force of the plating drum, and chip-type electronic components are gathered in the cathode ring and contacted and energized, and the rotation speed is gradually reduced or reduced and stopped. There is provided an electroplating method for an electronic component characterized in that a desired plating film is formed by repeating agitation / mixing and discrete steps.
In the electroplating method of the present invention, the plating solution is convected by the rotating centrifugal force, the electronic parts as the objects to be plated are gathered on the cathode ring, and the rotating centrifugal force is increased or decreased by slowing or decelerating and stopping the rotation. Since the object to be plated is agitated / mixed and discretely repeated, the plating film can be formed in a substantially uniform and desired thickness without variation for each object to be plated.

本発明の電子部品の電気めっき方法では、前記めっきドラムは正転と逆転とを含む工程で1サイクルが構成され、前記正転工程と前記逆転工程の各工程では、徐速、定速回転、減速及び停止のステップを有し、かつ定速回転中に通電するように構成可能である。
以上の構成によれば、めっき液に浸漬しためっきドラムの外延に陽極が付設した構成として、遠心力によって陰極リングの表面を覆うように被めっき物が集合して通電されるので、陰極リングへの過剰なめっき析出が抑制され、正逆転を繰り返すことで、被めっき物の混合と攪拌が円滑に進むので、めっき膜の厚さにバラツキが少なく、めっき膜表面の凹凸が抑制されるといった効果が得られる。
In the electroplating method for an electronic component according to the present invention, the plating drum includes one cycle including a forward rotation and a reverse rotation. In each of the forward rotation step and the reverse rotation step, a slow speed, a constant speed rotation, It has a step of decelerating and stopping, and can be configured to energize during constant speed rotation.
According to the above configuration, since the anode is attached to the outside of the plating drum immersed in the plating solution, the objects to be plated are gathered and energized so as to cover the surface of the cathode ring by centrifugal force. By suppressing the excessive plating deposition and repeating forward and reverse, the mixing and stirring of the object to be plated proceed smoothly, so there is little variation in the thickness of the plating film, and the unevenness of the plating film surface is suppressed Is obtained.

発明の電子部品の電気めっき方法では、めっきドラム内で被めっき物中にメディアを混在させずに、めっき膜を形成することも可能である。
以上の構成によれば、めっき電流は効率よく、被めっき物だけのめっき析出のために利用されるので、めっき材料の無駄な減少も少なく、めっき材料コストを削減できる。またメディアを使用しないことにより、メディアの管理や被めっき物との分離の必要もなく、めっき工程の作業も簡略化することができるといった効果が得られる。
発明の電子部品の電気めっき方法では、少なくとも、絶縁リングの内壁に付設した陰極リングと、絶縁リングの底を密閉する底部絶縁板と、前記絶縁リングの上側に固定された上部絶縁板と、該上部絶縁板にはめっきドラムの内部へめっき液を出入りさせ得る貫通孔とを備えるめっきドラムに、被めっき物であるチップ形電子部品を収容し、陽極を付設しためっき槽中にめっきドラムを浸漬すると共に、前記底部絶縁板がほぼ水平となるようにめっきドラムを保持しながら回転駆動させ、該めっきドラムの回転遠心力により、前記めっき槽中と前記めっきドラム内部とでめっき液を対流させると共に、前記めっきドラムの回転駆動における正転工程と逆転工程の定速回転中に前記陰極リングにチップ形電子部品を集合させて接触通電し、かつ該回転の徐速または減速及び停止による攪拌・混合と離散とを繰り返すことで所望のめっき膜を形成することを特徴とする電子部品の電気めっき方法も提供される。
In the electroplating method for an electronic component according to the invention, it is also possible to form a plating film without mixing media in an object to be plated in a plating drum.
According to the above configuration, since the plating current is efficiently used for plating deposition of only the object to be plated, there is little wasteful reduction of the plating material, and the plating material cost can be reduced. Also, by not using media, there is no need for media management or separation from the object to be plated, and it is possible to obtain an effect that the work of the plating process can be simplified.
In the electroplating method of the electronic component of the invention, at least a cathode ring attached to the inner wall of the insulating ring, a bottom insulating plate for sealing the bottom of the insulating ring, an upper insulating plate fixed on the upper side of the insulating ring, The upper insulating plate has a through-hole that allows the plating solution to enter and exit the plating drum. The chip-type electronic component, which is the object to be plated, is accommodated in the plating drum, and the plating drum is immersed in a plating tank provided with an anode. In addition, the plating drum is rotated while being held so that the bottom insulating plate is substantially horizontal, and the plating solution is convected in the plating tank and inside the plating drum by the rotational centrifugal force of the plating drum. , the plating drum are assembled chip-type electronic component on the cathode ring during constant speed rotation of the normal rotation process and the reverse rotation process in the rotational drive of the contact energized, and Electroplating method of an electronic component and forming a desired plated film by repeating the agitation and mixing by the slow or deceleration and stopping of the rotation discrete and are also provided.

本発明は、陽極を付設しためっき槽のめっき液中にめっきドラムを浸漬して遠心回転力を得てめっき析出を行なうものであり、軽薄短小な形状や外形寸法を有する小型のチップ形電子部品であっても、必ずしも、めっきドラム内にメディアの投入を必要とせず、まためっき装置自体の構造も小型・簡略化することができるので、めっき処理における脱脂、洗浄又は所要のめっき膜形成に続く、他のめっき膜形成処理に際しても、めっきドラムを他の処理槽へも容易に移設できるなどの汎用性に富み、かつメンテナンスも容易で、さらに、比較的短時間で略均一で所望の厚さのめっき膜を形成可能にするものである。   The present invention is a compact chip-type electronic component having a thin, short and small shape and external dimensions, in which a plating drum is immersed in a plating solution in a plating tank provided with an anode to obtain a centrifugal rotational force to perform plating deposition. Even so, it is not always necessary to insert media into the plating drum, and the structure of the plating apparatus itself can be reduced in size and simplified, so that it can be followed by degreasing, washing, or forming the required plating film in the plating process. Also, in other plating film formation processing, the plating drum can be easily transferred to other processing tanks, and is versatile, easy to maintain, and has a uniform thickness and a desired thickness in a relatively short time. The plating film can be formed.

本発明の実施の形態を図1乃至図6を参照して説明する。
図1(a)は被めっき物、すなわち、抵抗、コンデンサ、インダクタ又はサーミスタ等のチップ形電子部品の製造過程における斜視図であって、この被めっき物には表電極膜1a、裏電極膜1c及び端面電極膜1b等からなる下層電極膜1が形成されている。また図1(b)は、図1(a)の被めっき物にめっき膜2を形成した態様を示した斜視図である。本発明では、このように下層電極膜1の表面に、更に、めっき膜2を形成する必要のあるチップ形電子部品を「被めっき物」と記述して説明する。めっき膜2は、例えば、下層電極膜1の溶出を防止する、電極部の抵抗分を下げる、並びに回路基板の電極ランドとのはんだ接合を良好にするなど、を目的とするものであり、少なくとも一層以上が形成される。また、めっき膜は、例えば、Cu系、Ni系、Sn系またはSn/Pb系などの金属を析出させたものであり、ここで「系」とは、単一若しくは、少なくとも1つ以上の金属を含有する材料をいう。なお、本発明の装置及び方法は、図示したような絶縁基板を有する角形のチップ形電子部品に限定されるものではなく、例えば、円筒形や円柱形等の形状を有する電子部品にも適用可能である。
An embodiment of the present invention will be described with reference to FIGS.
FIG. 1A is a perspective view in the process of manufacturing a chip-type electronic component such as a resistor, a capacitor, an inductor, or a thermistor, and includes a front electrode film 1a and a back electrode film 1c. The lower electrode film 1 made of the end face electrode film 1b and the like is formed. Moreover, FIG.1 (b) is the perspective view which showed the aspect which formed the plating film 2 in the to-be-plated object of Fig.1 (a). In the present invention, a chip-type electronic component that requires the plating film 2 to be further formed on the surface of the lower electrode film 1 as described above will be described as a “plated object”. The plated film 2 is intended to prevent, for example, elution of the lower electrode film 1, lower the resistance of the electrode portion, and improve solder bonding with the electrode land of the circuit board. One or more layers are formed. The plating film is formed by depositing, for example, a Cu-based, Ni-based, Sn-based, or Sn / Pb-based metal. Here, the “system” refers to a single or at least one or more metals. A material containing The apparatus and method of the present invention are not limited to rectangular chip-shaped electronic components having an insulating substrate as shown in the figure, and can be applied to, for example, electronic components having a cylindrical shape or a cylindrical shape. It is.

図2は本発明の電気めっき装置10を模式的に示した断面図であり、図3(a)はめっきドラム20の平面図、図3(b)はめっきドラム20の断面図である。本発明の電気めっき装置10では、駆動モータ11がめっき槽8の上方で支持アーム12により支持・固定され、この駆動モータ11から駆動シャフト15が下方に延び、この駆動シャフト15の下端にアーム18を介してめっきドラム20が取り付けられ、めっきドラム20はめっき液7に浸漬されるように支持されている。なお、駆動モータ11は、駆動シャフト15を正逆の両方向に適宜切り替え可能に制御される得るものである。   2A and 2B are cross-sectional views schematically showing the electroplating apparatus 10 of the present invention. FIG. 3A is a plan view of the plating drum 20, and FIG. 3B is a cross-sectional view of the plating drum 20. In the electroplating apparatus 10 of the present invention, the drive motor 11 is supported and fixed above the plating tank 8 by the support arm 12, the drive shaft 15 extends downward from the drive motor 11, and the arm 18 is attached to the lower end of the drive shaft 15. The plating drum 20 is attached via the, and the plating drum 20 is supported so as to be immersed in the plating solution 7. Note that the drive motor 11 can be controlled so that the drive shaft 15 can be switched appropriately in both forward and reverse directions.

ここで、前記駆動シャフト15は、めっきドラム20の中心に位置するように設けられている。また駆動シャフト15には摺動リング16が設けられ、この摺動リング16に接触するようにブラシ端子17が設けられ、このブラシ端子17には、陰極電源まで延びるコード13が接続されている。一方、めっき槽8の内部には陽極板6が浸漬されており、この陽極板6には陰極電源まで延びるコード5が接続されている。   Here, the drive shaft 15 is provided so as to be positioned at the center of the plating drum 20. The drive shaft 15 is provided with a sliding ring 16, and a brush terminal 17 is provided so as to contact the sliding ring 16, and a cord 13 extending to the cathode power source is connected to the brush terminal 17. On the other hand, an anode plate 6 is immersed in the plating tank 8, and a cord 5 extending to the cathode power source is connected to the anode plate 6.

前記めっきドラム20は、図3(a)(b)に示したように、絶縁リング22の上下開口にそれぞれ上部絶縁板21と底部絶縁板23とがボルト・ナット27により固定され、絶縁リング22の内壁に金属製の陰極リング24が付設されている。このようなボルト・ナット27による締め付け固定は、めっきドラム20からの被めっき物の投入や取出し、更には、分解、メインテナンスを容易ならしめるものである。
めっきドラム20は、上部絶縁板21のうえにボルト・ナット25でアーム18が取り付けられ、このアーム18に駆動シャフト15の下端が固定されることにより、めっき液面に対してめっきドラム20の上部絶縁板21や底部絶縁板23が略平行になるように支持されるものであり、このような構成ゆえに、めっきドラム20と、これを回転駆動する駆動モータ11や駆動シャフト15などが一体化して、めっき槽8からの取り出し、または脱脂、洗浄さらに所定のめっき膜形成に続く、他のめっき膜形成処理のための移動も容易に行ない得るものである。
陰極リング24には、アーム18とめっきドラム20との固定に用いたボルト・ナット25が接触しており、これにより、陰極の導電路が形成される。すなわち、陰極電源から陰極リング24までを繋ぐ電気的な導通路として、コード13、ブラシ端子17、摺動リング16、駆動シャフト15、アーム18、ボルト・ナット25が、この順番でそれぞれ通電可能に接続するように構成されており、このような陰極の導電路形成により、電気めっき装置の小型化及び簡略化が図られる。この場合、締め付けボルト・ナット27、アーム18及び駆動シャフト15のめっき液に暴露される表面は絶縁するような好適な絶縁処理が施される。
また、上述は陰極の導電路形成の一例であって、別途、被覆導体で導電路形成しても良い。なお、めっきドラムの形状は、回転中にめっき槽内でめっき液が過度に波立たないように、表面の凹凸を少なくすることが望ましい。
As shown in FIGS. 3A and 3B, the plating drum 20 has an upper insulating plate 21 and a bottom insulating plate 23 fixed to the upper and lower openings of the insulating ring 22 by bolts and nuts 27, respectively. A metal cathode ring 24 is attached to the inner wall. Such tightening and fixing with the bolts and nuts 27 facilitates the introduction and removal of the object to be plated from the plating drum 20, and further facilitates disassembly and maintenance.
The plating drum 20 has an arm 18 attached to the upper insulating plate 21 with bolts and nuts 25, and the lower end of the drive shaft 15 is fixed to the arm 18. The insulating plate 21 and the bottom insulating plate 23 are supported so as to be substantially parallel. Due to such a configuration, the plating drum 20 is integrated with the drive motor 11 and the drive shaft 15 that rotationally drive the plating drum 20. Then, removal from the plating tank 8 or degreasing, cleaning, and movement for another plating film forming process following the formation of a predetermined plating film can be easily performed.
Bolts and nuts 25 used for fixing the arm 18 and the plating drum 20 are in contact with the cathode ring 24, whereby a cathode conductive path is formed. That is, as an electrical conduction path connecting the cathode power source to the cathode ring 24, the cord 13, the brush terminal 17, the sliding ring 16, the drive shaft 15, the arm 18, and the bolt / nut 25 can be energized in this order. It is comprised so that it may connect, and size reduction and simplification of an electroplating apparatus are achieved by forming the conductive path of such a cathode. In this case, a suitable insulation treatment is performed so as to insulate the surfaces of the fastening bolts / nuts 27, the arm 18, and the drive shaft 15 exposed to the plating solution.
The above is an example of forming the conductive path of the cathode, and the conductive path may be separately formed with a coated conductor. In addition, as for the shape of a plating drum, it is desirable to reduce the unevenness | corrugation of a surface so that a plating solution may not excessively ripple in a plating tank during rotation.

めっきドラム20の底部絶縁板23は、絶縁リング22の底部開口を密封するように無孔板が使用される。一方、上部絶縁板21には、陰極リング24の上端よりもドラム回転中心側へ所定長さ離間した位置に第一貫通孔21aが穿設され、さらに、第一貫通孔21aよりもドラム回転中心側へ所定長さ離間した位置に第二貫通孔21bが穿設されている。第一貫通孔21aは、陰極リング24とほぼ同心円の配置で少なくとも1つ以上のスリット状に形成され、第二貫通孔21bは上部絶縁板21のほぼ中央に位置している。
なお、上部絶縁板21の内面側には、図3(a)(b)に示したようにメッシュ網26を設けても良い。これは、めっきドラム20の回転数を上げる必要がない場合に有効であり、これにより、めっきドラム20を回転駆動させたときにも、被めっき物3が第一貫通孔21aと第二貫通孔21bから流出することを防止できる。また第一貫通孔21aは円形または多角形などの形状に形成することも可能である。また図3(a)(b)では第一貫通孔21aが垂直に穿設されているが、第一貫通孔21aは外周に向けて斜めに形成しても良く、これにより、めっきドラム20からめっき液を排出する効率を高めることができる。
上記めっきドラム20では、図3(b)に図示したように、めっきドラムの直径Rがめっきドラムの回転軸方向の長さLよりも大きくなるように形成することにより、よりコンパクトなめっきドラムが提供されるものである。
The bottom insulating plate 23 of the plating drum 20 is a non-porous plate so as to seal the bottom opening of the insulating ring 22. On the other hand, the upper insulating plate 21 is provided with a first through hole 21a at a position spaced a predetermined length from the upper end of the cathode ring 24 toward the drum rotation center side, and further, the drum rotation center than the first through hole 21a. A second through hole 21b is formed at a position spaced a predetermined length toward the side. The first through-hole 21 a is formed in at least one or more slits in a substantially concentric arrangement with the cathode ring 24, and the second through-hole 21 b is located substantially at the center of the upper insulating plate 21.
Note that a mesh net 26 may be provided on the inner surface side of the upper insulating plate 21 as shown in FIGS. This is effective when it is not necessary to increase the number of revolutions of the plating drum 20. Thus, even when the plating drum 20 is driven to rotate, the object to be plated 3 remains in the first through hole 21 a and the second through hole. Outflow from 21b can be prevented. The first through hole 21a can be formed in a circular shape or a polygonal shape. 3 (a) and 3 (b), the first through hole 21a is formed vertically, but the first through hole 21a may be formed obliquely toward the outer periphery. The efficiency of discharging the plating solution can be increased.
In the plating drum 20, as shown in FIG. 3B, a more compact plating drum can be obtained by forming the plating drum so that the diameter R of the plating drum is larger than the length L of the plating drum in the rotation axis direction. It is provided.

以上のように、第二貫通孔21bをめっきドラム20の回転中心付近に配置し、第一貫通孔21aをめっきドラム20の外周付近に配置したことにより、めっきドラム20を回転駆動すると、めっき液は、第二貫通孔21bからめっきドラム20内に流入し、第一貫通孔21aからめっきドラム20外へ流出し、めっき槽9とめっきドラム20内とでめっき液10の対流が促進される。このように対流が促進されることにより、陰極リング2の近傍でめっき液中のメタル濃度が低下することなく、所定のメタル濃度に維持される。めっきドラム20内には、被めっき物であるチップ形電子部品3が収容されるものであり、回転駆動が停止しているときには、図3(b)に示したように、チップ形電子部品3は拡散しているが、めっきドラム20が回転駆動しているときには、被めっき物3は回転遠心力とめっき液の流れを受けて、陰極リング2に接触するように集合する。
このように、第一貫通孔21aは、めっきドラム20内部からめっき液をめっき槽9へ環流させる排出口として機能するものであるが、このめっき液の排出口である第一貫通孔21aは、上述したように、陰極リング2の上端部からドラムの回転中心側へ所定長さ離間して設けられているため、陰極リング2の上端部近傍で電流密度が高まることがなく、したがって、陰極リング2の内側で略均一な電流密度を得ることができ、めっき液の排出口である第一貫通孔21a近傍におけるめっき析出が、極めて効果的に抑制される。
As described above, when the second through hole 21b is disposed near the rotation center of the plating drum 20 and the first through hole 21a is disposed near the outer periphery of the plating drum 20, when the plating drum 20 is driven to rotate, the plating solution Flows into the plating drum 20 from the second through hole 21b, flows out of the plating drum 20 from the first through hole 21a, and convection of the plating solution 10 is promoted between the plating tank 9 and the plating drum 20. By promoting the convection in this way, the metal concentration in the plating solution is maintained in the vicinity of the cathode ring 2 and maintained at a predetermined metal concentration. In the plating drum 20, the chip-type electronic component 3 which is an object to be plated is accommodated, and when the rotation drive is stopped, as shown in FIG. However, when the plating drum 20 is driven to rotate, the objects to be plated 3 receive the rotational centrifugal force and the flow of the plating solution, and gather to come into contact with the cathode ring 2.
Thus, the first through hole 21a functions as a discharge port for circulating the plating solution from the inside of the plating drum 20 to the plating tank 9, but the first through hole 21a, which is a discharge port for this plating solution, As described above, the current density does not increase in the vicinity of the upper end portion of the cathode ring 2 because it is spaced from the upper end portion of the cathode ring 2 toward the rotation center side of the drum by a predetermined length. 2, a substantially uniform current density can be obtained, and plating deposition in the vicinity of the first through hole 21 a that is a plating solution discharge port is extremely effectively suppressed.

めっき槽8は、めっき膜形成における生産効率の観点から、所要のめっき処理回数に耐え得るように好適なメタル濃度及び液温が維持できる容量を備えたものであり、めっきドラムの両側又は周囲に位置するように、内壁近傍に陽極板6が配設されたものであり、単槽形式に構成しても良く、あるいは、好適なメタル濃度及び液温に保たれるように循環形式(図示せず)で構成しても良い。   The plating tank 8 has a capacity capable of maintaining a suitable metal concentration and liquid temperature so as to withstand the required number of plating processes from the viewpoint of production efficiency in plating film formation, and is provided on both sides or around the plating drum. The anode plate 6 is disposed in the vicinity of the inner wall so as to be positioned, and may be configured as a single tank type, or a circulation type (not shown) so as to maintain a suitable metal concentration and liquid temperature. )).

図2及び図3により説明したような基本構成を備える電気めっき装置により、被めっき物にめっき膜を施す方法について説明する。
駆動シャフト15とアーム18により懸垂されためっきドラム20に被めっき物3を投入し、その後に、めっきドラム20をめっき槽8中に浸漬する。
次に、駆動モータ11を稼動し、図4のタイミングチャートに示したようなサイクルで制御する。すなわち、1サイクルは正転区間Aと逆転区間Cとで構成され、正転区間Aでは停止Pから徐速するステップeを経て、定速回転Bに至り、減速するステップfにより停止点P1に至る。一方、逆転区間Cでは逆転方向に回転を開始し、同様に、徐速ステップe’、定速回転D、減速ステップf’を備えている。
そして、めっきドラムの回転停止点P、P1、P2では、たとえ、小型で自重の軽い被めっき物3であっても、図3(b)に示すように、陰極リング2から離散して不通電となっている。このめっきドラムが、徐速ステップe,e’を得て回転速度が徐々に上昇していく過程で、離散していた被めっき物3が攪拌混合されながら、陰極リング2の内壁に徐々に集合して接触が促される。定速回転B,Dの区間中には、遠心力の作用により被めっき物3が陰極リング24に接触するように密に集合し、接触通電も確実に行なわれ、めっき液も遠心力の作用により対流が促進されて被めっき物3に迎合することで、被めっき物3にめっき膜の形成が行なわれる。そして、定速回転B,Dの後には、減速ステップf,f’で被めっき物3の集合が放たれて攪拌・混合が始まり、停止によって離散に至る。
なお、特許文献1における攪拌・混合及び通電による方式と比べ、本発明は1サイクル中に正転と逆転を内包することで集合・通電、攪拌・混合及び離散が強制的に行なわれるので、従来技術のようなメディアを必ずしも投入する必要が無いものである。
ここで、図4のタイミングチャートでは、減速、停止及び徐速と連続したチャートになっているが、回転数、減速及び徐速の勾配との関係を考慮して、攪拌・混合及び離散の促進を図るため、所定長の停止時間を設けても良い。
A method of applying a plating film to an object to be plated by an electroplating apparatus having the basic configuration as described with reference to FIGS. 2 and 3 will be described.
The object 3 to be plated is put into the plating drum 20 suspended by the drive shaft 15 and the arm 18, and then the plating drum 20 is immersed in the plating tank 8.
Next, the drive motor 11 is operated and controlled in a cycle as shown in the timing chart of FIG. That is, one cycle is composed of a forward rotation section A and a reverse rotation section C, and in the forward rotation section A, the step e that slows down from the stop P reaches the constant speed rotation B, and the stop point P1 is reached by the step f that decelerates. It reaches. On the other hand, in the reverse rotation section C, the rotation starts in the reverse rotation direction, and similarly includes a slow speed step e ′, a constant speed rotation D, and a deceleration step f ′.
At the rotation stop points P, P1, and P2 of the plating drum, even if the object 3 is small and light in weight, it is discrete from the cathode ring 2 and de-energized as shown in FIG. It has become. This plating drum gradually gathers on the inner wall of the cathode ring 2 while the discrete workpieces 3 are agitated and mixed in the process of gradually increasing the rotational speed by obtaining the slow steps e and e ′. Contact is encouraged. During the section of constant speed rotation B, D, the objects to be plated 3 gather together so as to come into contact with the cathode ring 24 by the action of centrifugal force, contact energization is performed reliably, and the plating solution also acts by the centrifugal force. As a result of convection being promoted by and accepting the object 3 to be plated, a plating film is formed on the object 3 to be plated. Then, after the constant speed rotations B and D, the set of the objects to be plated 3 is released at the deceleration steps f and f ′, and the stirring / mixing is started.
Compared to the method of stirring / mixing and energization in Patent Document 1, the present invention forcibly performs set / energization, stirring / mixing, and discrete by including normal rotation and reverse rotation in one cycle. It is not always necessary to insert media such as technology.
Here, in the timing chart of FIG. 4, the chart is continuous with deceleration, stop, and slow speed. However, stirring / mixing and discrete acceleration are considered in consideration of the relationship between the rotational speed, the gradient of slowdown, and slow speed. Therefore, a predetermined length of stop time may be provided.

次に、図2及び図3とは異なる電気めっき装置の態様について、それぞれ図5乃至図9を参照しながら説明する。なお、図5乃至図9において、図2及び図3と同じ構成については同じ符号を付して、更なる説明は省略する。
図5は、めっきドラムの断面を示したものであり、ここでは、傾斜面33aが、めっきドラムの回転中心に向けて下り勾配になるように、底部絶縁板33の外周部分に設けられている。この傾斜面33aは、底部絶縁板33の中央部分の厚さを薄くすることにより形成されたものである。このような傾斜面33aを設ければ、めっきドラム20を定速回転B,Dから減速する過程で、被めっき物が傾斜面33aに沿って下り方向に移動し、これにより攪拌・混合及び離散が促進されるものである。逆に、徐速ステップにおいては、陰極リング24付近が底部絶縁板33の中央部付近よりも狭くなっているため、被めっき物の陰極リング2の内壁への密集が、より効果的に促進されるものである。
なお、図5では絶縁リング22と陰極リング24の付設態様が、図6(a)のように形成されているが、投入する被めっき物の形状及び寸法と、被めっき物の陰極リング24への集合状況、そのときの電流密度などを考慮して、図6(b)(c)(d)に図示したような形状に、絶縁リング22と陰極リング24を構成しても良い。
Next, aspects of the electroplating apparatus different from those in FIGS. 2 and 3 will be described with reference to FIGS. 5 to 9, the same components as those in FIGS. 2 and 3 are denoted by the same reference numerals, and further description thereof is omitted.
FIG. 5 shows a cross section of the plating drum. Here, the inclined surface 33a is provided on the outer peripheral portion of the bottom insulating plate 33 so as to be inclined downward toward the rotation center of the plating drum. . The inclined surface 33 a is formed by reducing the thickness of the central portion of the bottom insulating plate 33. If such an inclined surface 33a is provided, the object to be plated moves in the downward direction along the inclined surface 33a in the process of decelerating the plating drum 20 from the constant speed rotations B and D, thereby stirring, mixing, and discrete Will be promoted. On the contrary, in the slow speed step, the vicinity of the cathode ring 24 is narrower than the vicinity of the central portion of the bottom insulating plate 33, so that the density of the objects to be plated on the inner wall of the cathode ring 2 is more effectively promoted. Is.
In FIG. 5, the attachment mode of the insulating ring 22 and the cathode ring 24 is formed as shown in FIG. 6A. However, the shape and size of the object to be plated and the cathode ring 24 of the object to be plated are shown. The insulating ring 22 and the cathode ring 24 may be configured in the shapes shown in FIGS. 6B, 6C, and 6D in consideration of the gathering state of the current and the current density at that time.

次に、図7は、上部絶縁板21の第二貫通孔21bを開閉自在に覆う逆流防止弁38を示した図である。これは、正回転から逆回転、または逆回転から正回転へ急激に移行させる場合に、第二貫通孔21bからめっき液が逆流するのを防止したり、この逆流に伴なって被めっき物がめっきドラムから流出ことを防止するものである。この逆流防止弁38は、上下動可能に設けられたシャフト38aの下端に閉鎖板38cが枢着され、シャフト38aには閉鎖板38cを上方に引上げるように付勢するバネ38bが環装されており、回転が停止に近づくと、閉鎖板38cが第二貫通孔21bを閉じるように作用し、回転中にあっては、めっき液が第一貫通孔21aからのめっき液流出に伴うめっきドラム20内の圧力が低下し、このとき、めっき液を補うように圧力を得て閉鎖板38cが開き、めっき液が流入する。
また図8(a)〜(c)は、図7とは異なる態様の逆流防止弁39を示した図である。この逆流防止弁39では、第二貫通孔21bに固定された導入筒39aの内部に導入リング39bが固定され、導入リング39bはシャフト挿通孔39b−1とめっき液流通路39b−2とを備え、シャフト挿通孔39b−1にシャフト39cが上下動自在に挿通され、シャフト39cの下端には閉鎖板39dが枢着され、シャフト39cの上端にはバネ固定具39eが固定され、シャフト39cに環装されたバネ39fは、その上下端がバネ固定具39eと導入リング39bとに当接している。したがって、閉鎖板39dに外力が作用していないとき、すなわち、めっきドラム20が回転を停止し、めっき液が第二貫通孔21bを通過していないときには、図8(b)に示したように、バネ39fがシャフト39cを上方に押し上げて、閉鎖板39dは導入筒39aの下端を閉じている。また同様に、めっきドラム20が回転を減速しているときにも、閉鎖板39dは第二貫通孔21bを閉鎖する。逆に、めっきドラム20が回転しているときには、めっき液が第二貫通孔21bからめっきドラム20内に流入する圧力で、閉鎖板38cは、図8(a)に示したように開放状態にされる。
Next, FIG. 7 is a view showing a backflow prevention valve 38 that covers the second through hole 21b of the upper insulating plate 21 so as to be freely opened and closed. This is to prevent the plating solution from flowing backward from the second through-hole 21b in the case of abrupt transition from normal rotation to reverse rotation, or from reverse rotation to normal rotation. This prevents it from flowing out of the plating drum. In the backflow prevention valve 38, a closing plate 38c is pivotally attached to a lower end of a shaft 38a provided so as to be movable up and down, and a spring 38b for energizing the closing plate 38c upward is mounted on the shaft 38a. When the rotation approaches the stop, the closing plate 38c acts so as to close the second through hole 21b. During the rotation, the plating solution is accompanied by the plating solution flowing out of the first through hole 21a. At this time, the pressure is obtained so as to supplement the plating solution, the closing plate 38c is opened, and the plating solution flows in.
FIGS. 8A to 8C are views showing a backflow prevention valve 39 in a mode different from that in FIG. In the backflow prevention valve 39, an introduction ring 39b is fixed inside an introduction cylinder 39a fixed to the second through hole 21b, and the introduction ring 39b includes a shaft insertion hole 39b-1 and a plating solution flow passage 39b-2. The shaft 39c is inserted into the shaft insertion hole 39b-1 so as to be movable up and down, a closing plate 39d is pivotally attached to the lower end of the shaft 39c, and a spring fixture 39e is fixed to the upper end of the shaft 39c. The upper and lower ends of the mounted spring 39f are in contact with the spring fixture 39e and the introduction ring 39b. Therefore, when no external force is applied to the closing plate 39d, that is, when the plating drum 20 stops rotating and the plating solution does not pass through the second through hole 21b, as shown in FIG. The spring 39f pushes the shaft 39c upward, and the closing plate 39d closes the lower end of the introduction tube 39a. Similarly, the closing plate 39d closes the second through hole 21b even when the plating drum 20 decelerates the rotation. On the other hand, when the plating drum 20 is rotating, the closing plate 38c is opened as shown in FIG. 8A by the pressure at which the plating solution flows into the plating drum 20 from the second through hole 21b. Is done.

図9の態様は、上部絶縁板21に単独の孔21c、すなわち共用貫通孔21cを設けたものであり、この共用貫通孔21cは、図3(a)における第一貫通孔21aと第二貫通孔21bとの機能を兼ね備えるものであり、共用貫通孔21cを通してめっき液が流出・流入する。この共用貫通孔21cには、図示の如くメッシュ網28が張られることが好ましい。共用貫通孔21cは、その孔の縁が陰極リング24の上端部から所定長さ離間した位置に設けられたものである。図8のような構成により、回転数が低速の場合であっても、より軽薄短小で小型なチップ形電子部品に、コンパクトなめっきドラムを用いて好適なめっき膜を形成することができる。   In the embodiment of FIG. 9, the upper insulating plate 21 is provided with a single hole 21c, that is, a shared through hole 21c. The shared through hole 21c is formed by the first through hole 21a and the second through hole in FIG. It has a function with the hole 21b, and the plating solution flows out and flows in through the common through hole 21c. The common through hole 21c is preferably stretched with a mesh net 28 as shown. The shared through-hole 21 c is provided at a position where the edge of the hole is separated from the upper end of the cathode ring 24 by a predetermined length. With the configuration as shown in FIG. 8, even when the rotational speed is low, a suitable plating film can be formed on a lighter, thinner, smaller and smaller chip-type electronic component using a compact plating drum.

図10は、電気めっき装置における駆動シャフト15とアーム18のみを図示したものであり、図示はしていないが、アーム18の下方には第二貫通孔b21が設けられている。図10において、駆動シャフト15にはめっき液を通すための配管15aが設けられており、この配管15aはアーム18の下面に吹き出し口を備え、この吹き出し口は第二貫通孔21bに対向する配置に設けられている。配管15aは、めっき槽9から吸い上げためっき液を、第二貫通孔21bを通過させて、めっきドラム20内に導入するものである。この態様によれば、被めっき物の形状及び寸法を考慮して、被めっき物の離散が過多にならない程度の流入速度で、めっき液をめっきドラム20内に導入すれば、めっき液の対流を効果的に促進させることができるものである。このとき、めっき液に暴露する部分は絶縁被覆される。   FIG. 10 illustrates only the drive shaft 15 and the arm 18 in the electroplating apparatus. Although not illustrated, a second through hole b21 is provided below the arm 18. In FIG. 10, the drive shaft 15 is provided with a pipe 15a for allowing the plating solution to pass through. The pipe 15a has a blowout port on the lower surface of the arm 18, and this blowout port is disposed opposite the second through hole 21b. Is provided. The pipe 15a is for introducing the plating solution sucked up from the plating tank 9 into the plating drum 20 through the second through hole 21b. According to this aspect, in consideration of the shape and dimensions of the object to be plated, if the plating solution is introduced into the plating drum 20 at an inflow rate that does not cause excessive dispersion of the object to be plated, the convection of the plating solution can be achieved. It can be effectively promoted. At this time, the portion exposed to the plating solution is covered with insulation.

上述する実施の形態において、図3(a)(b)の上部絶縁板21及び底部絶縁板23を備えてなる、めっきドラム20を用いて、公称長さが0.6mm×公称幅0.3mmの角形の形状を有するチップ形抵抗器で、公称抵抗値10kΩのものを被めっき物の試料とし、めっきドラム20にメディアを投入しないで被めっき物だけを略30万個を収容して、図1(a)の下層の電極膜が形成されて露出した表面に、Niめっき膜の形成に続き、Snめっき膜を形成した実施例を示す。   In the embodiment described above, the nominal length is 0.6 mm × the nominal width is 0.3 mm using the plating drum 20 including the upper insulating plate 21 and the bottom insulating plate 23 of FIGS. A chip-type resistor having a rectangular shape having a nominal resistance value of 10 kΩ is used as a sample of an object to be plated, and approximately 300,000 pieces of the object to be plated are accommodated without putting media in the plating drum 20. An example is shown in which an Sn plating film is formed on the exposed surface of the lower electrode film 1 (a) following the formation of the Ni plating film.

めっき析出タイミングチャートは、図4と同様のプロファイルを用い、析出されためっき膜の厚さを観測した結果を表1及び表2に示す。なお、試料はそれぞれのめっき膜の形成が完了したものから、各20個抽出して試料の長さ方向ほぼ中央を切断し、それぞれのめっき膜厚さ測定した結果を示す。

Figure 0004358568
Figure 0004358568
The plating deposition timing chart shows the results of observing the thickness of the deposited plating film using the same profile as in FIG. In addition, 20 samples are extracted from the samples in which the formation of each plating film is completed, and the results of measuring the plating film thickness are shown by cutting almost the center in the length direction of the sample.
Figure 0004358568
Figure 0004358568

実施例の結果が示すように、メディアを投入しないで、めっき凝集が生じることもなく、めっき膜表面も密で、めっき膜厚さにおいても、バラツキが安定しためっき膜が得られた。また従来は一般的に、抵抗値が高い場合は、大きな電流の供給が必要であり、めっき時間も長くなっていたのであるが、実施例の結果によれば、従来の装置より大幅なめっき時間の短縮が可能であり、抵抗器のめっき膜形成に見られるように、定格抵抗値の定数に依存することなく、めっき電流も略一定の値で短時間にめっき膜を形成することができる。なお、本発明の実施例では、表1及び表2において、所定の外形寸法を有する被めっき物を試料として例示したが、本発明の適用範囲は特にこれに限定されるものではない。   As shown in the results of the examples, without adding media, plating agglomeration did not occur, the plating film surface was dense, and a plating film with stable variations in plating film thickness was obtained. Further, in general, when the resistance value is high, it is necessary to supply a large current, and the plating time is also long. According to the results of the examples, the plating time is significantly longer than that of the conventional apparatus. As can be seen in the formation of the plating film of the resistor, the plating film can be formed in a short time with a substantially constant value of the plating current without depending on the constant of the rated resistance value. In the examples of the present invention, the objects to be plated having predetermined external dimensions are exemplified as samples in Tables 1 and 2, but the scope of the present invention is not particularly limited thereto.

(a)は被めっき物の製造過程における斜視図であり、(b)は(a)の被めっき物にめっき膜を形成した態様を示した斜視図である。(A) is the perspective view in the manufacture process of to-be-plated object, (b) is the perspective view which showed the aspect which formed the plating film in the to-be-plated object of (a). 本発明の電気めっき装置を模式的に示した断面図である。It is sectional drawing which showed typically the electroplating apparatus of this invention. (a)はめっきドラムの平面図、(b)はめっきドラムの断面図である(A) is a top view of a plating drum, (b) is sectional drawing of a plating drum. めっきドラムを回転駆動させる際のタイミングチャートである。It is a timing chart at the time of rotating a plating drum. 図2及び図3とは異なる態様の電気めっき装置を例示する部分的な断面図である。FIG. 4 is a partial cross-sectional view illustrating an electroplating apparatus of a mode different from those in FIGS. 2 and 3. 図5のめっきドラムにおける絶縁リングと陰極リングの異なる付設状況を例示した部分的な断面図である。FIG. 6 is a partial cross-sectional view illustrating different attachment states of an insulating ring and a cathode ring in the plating drum of FIG. 5. 第二貫通孔を開閉自在に覆う逆流防止弁を示した図である。It is the figure which showed the backflow prevention valve which covers a 2nd through-hole so that opening and closing is possible. (a)〜(c)は図7とは異なる態様の逆流防止弁を示した図である。(A)-(c) is the figure which showed the backflow prevention valve of the aspect different from FIG. 上部絶縁板に共用貫通孔を設けた態様である。This is a mode in which a common through hole is provided in the upper insulating plate. 図2及び図3とは異なる態様の電気めっき装置における駆動シャフトとアームのみを図示したものである。Only the drive shaft and the arm in the electroplating apparatus of the aspect different from FIG.2 and FIG.3 are shown in figure.

符号の説明Explanation of symbols

1 被めっき物
6 陽極
7 めっき液
8 めっき槽
10 電気めっき装置
15 駆動シャフト
18 アーム
20 めっきドラム
21 上部絶縁板
21a 第一貫通孔
21b 第二貫通孔
21c 共用貫通孔
22 絶縁リング
23 底部絶縁板
24 陰極リング
38 逆流防止弁
39 逆流防止弁
DESCRIPTION OF SYMBOLS 1 To-be-plated object 6 Anode 7 Plating solution 8 Plating tank 10 Electroplating apparatus 15 Drive shaft 18 Arm 20 Plating drum 21 Upper insulating plate 21a First through hole 21b Second through hole 21c Common through hole 22 Insulating ring 23 Bottom insulating plate 24 Cathode ring 38 Backflow prevention valve 39 Backflow prevention valve

Claims (11)

陽極が付設されためっき槽内において、めっきドラムが回転駆動され得るように駆動シャフトの下端に設けられ、該めっきドラムは、内壁に陰極リングが付設された絶縁リングと、該絶縁リングの底を密閉する底部絶縁板と、前記絶縁リングの上側に固定された上部絶縁板とを備え、該上部絶縁板には、めっきドラムが回転駆動されたときに作用する遠心力により、めっき液がめっきドラムの内部から外部へ流出すると共に外部から内部に流入するように貫通孔が設けられたものであることを特徴とする電子部品の電気めっき装置。 In the plating tank provided with the anode, the plating drum is provided at the lower end of the drive shaft so that the plating drum can be rotationally driven. The plating drum has an insulating ring with a cathode ring attached to the inner wall, and a bottom of the insulating ring. A bottom insulating plate to be sealed; and an upper insulating plate fixed to the upper side of the insulating ring. The plating solution is applied to the upper insulating plate by centrifugal force acting when the plating drum is driven to rotate. An electroplating apparatus for electronic parts, wherein a through hole is provided so as to flow out from the inside to the outside and to flow from the outside into the inside. 前記上部絶縁板の貫通孔が、第一貫通孔と第二貫通孔とで構成され、前記第一貫通孔は、めっき液が前記陰極リングよりも内側で同心円状にめっきドラム内から流出するように前記陰極リングから所定長離間した位置に少なくとも1つ設けられ、該第二貫通孔は、前記第一貫通孔よりも内側でめっきドラム内にめっき液が流入するように設けられたことを特徴とする請求項1に記載の電子部品の電気めっき装置。 The through hole of the upper insulating plate is composed of a first through hole and a second through hole, and the first through hole allows the plating solution to flow out of the plating drum concentrically inside the cathode ring. Wherein at least one of the second through holes is provided at a position spaced apart from the cathode ring by a predetermined length, and the plating solution flows into the plating drum inside the first through hole. The electroplating apparatus for electronic parts according to claim 1. 前記底部絶縁板は、めっきドラムの回転中心に向けて下り傾斜に形成された面を有することを特徴とする請求項1または請求項2に記載の電子部品の電気めっき装置。 3. The electroplating apparatus for an electronic component according to claim 1, wherein the bottom insulating plate has a surface formed so as to be inclined downward toward the rotation center of the plating drum. めっき液が前記第二貫通孔から逆流することを防止するように逆流防止弁を備えることを特徴とする請求項2に記載の電子部品の電気めっき装置。 The electroplating device for an electronic component according to claim 2, further comprising a backflow prevention valve so as to prevent the plating solution from flowing back from the second through hole. 前記めっきドラムの直径が、前記めっきドラムの回転軸方向の長さよりも大きいことを特徴とする請求項1乃至請求項4のいずれかに記載の電子部品の電気めっき装置。 The electroplating apparatus for an electronic component according to any one of claims 1 to 4, wherein a diameter of the plating drum is larger than a length of the plating drum in a rotation axis direction. 前記駆動シャフトの内面に、前記めっき槽と前記めっきドラム内のめっき液の循環を促すようにめっき液導入貫通孔を備えることを特徴とする請求項1乃至請求項5のいずれかに記載の電子部品の電気めっき装置。 The inner surface of the drive shaft, electrons according to any of claims 1 to 5, characterized in that it comprises a plating liquid introduction holes to encourage circulation of the plating solution of the plating tank and the plating in the drum Electroplating equipment for parts. 前記上部絶縁板には、めっき液が前記めっきドラム内へ流入する貫通孔と、めっき液が前記めっきドラム内から流出する貫通孔とが、同じ貫通孔で共用されるように、前記陰極リングよりも内側に離間した位置に形成されたことを特徴とする請求項1に記載の電子部品の電気めっき装置。 In the upper insulating plate, from the cathode ring, a through hole through which the plating solution flows into the plating drum and a through hole through which the plating solution flows out from the plating drum are shared by the same through hole. The electroplating apparatus for an electronic component according to claim 1, wherein the electroplating apparatus is also formed at a position spaced inward. 少なくとも、絶縁リングの内壁に付設した陰極リングと、絶縁リングの底を密閉する底部絶縁板と、前記絶縁リングの上側に固定された上部絶縁板と、該上部絶縁板にはめっきドラムの内部へめっき液を出入りさせ得る貫通孔とを備えるめっきドラムに、被めっき物であるチップ形電子部品を収容し、陽極を付設しためっき槽中にめっきドラムを浸漬すると共に、前記底部絶縁板がほぼ水平となるようにめっきドラムを保持しながら回転駆動させ、該めっきドラムの回転遠心力により、前記めっき槽中と前記めっきドラム内部とでめっき液を対流させると共に前記陰極リングにチップ形電子部品を集合させて接触通電し、かつ該回転の徐速または減速及び停止による攪拌・混合と離散とを繰り返すことで所望のめっき膜を形成することを特徴とする電子部品の電気めっき方法。 At least a cathode ring attached to the inner wall of the insulating ring, a bottom insulating plate for sealing the bottom of the insulating ring, an upper insulating plate fixed to the upper side of the insulating ring, and the upper insulating plate to the inside of the plating drum A plating drum having a through-hole through which a plating solution can enter and exit is accommodated with a chip-type electronic component that is an object to be plated. The plating drum is immersed in a plating tank provided with an anode, and the bottom insulating plate is substantially horizontal. a plating drum is rotated while holding the so, the centrifugal force of the plating drum, causes convection of the plating solution in said plating drum interior and the plating bath, the chip-type electronic part on the cathode ring It is characterized by forming a desired plating film by collecting and energizing contact, and repeating stirring / mixing and discrete by slowing down or slowing down and stopping the rotation. Electroplating method of the electronic component to be. 前記めっきドラムは正転と逆転とを含む工程で1サイクルが構成され、前記正転工程と前記逆転工程の各工程では、徐速、定速回転、減速及び停止のステップを有し、かつ定速回転中に通電することを特徴とする請求項8に記載の電子部品の電気めっき方法。 The plating drum is composed of one cycle including forward rotation and reverse rotation, and each of the forward rotation step and the reverse rotation step includes a step of slow speed, constant speed rotation, deceleration and stop, and a constant speed. The method of electroplating an electronic component according to claim 8, wherein energization is performed during high-speed rotation. めっきドラム内では、被めっき物中にメディアを混在させずに、めっき膜を形成することを特徴とする請求項9に記載の電子部品の電気めっき方法。 The electroplating method for an electronic component according to claim 9, wherein a plating film is formed in the plating drum without mixing media in an object to be plated. 少なくとも、絶縁リングの内壁に付設した陰極リングと、絶縁リングの底を密閉する底部絶縁板と、前記絶縁リングの上側に固定された上部絶縁板と、該上部絶縁板にはめっきドラムの内部へめっき液を出入りさせ得る貫通孔とを備えるめっきドラムに、被めっき物であるチップ形電子部品を収容し、陽極を付設しためっき槽中にめっきドラムを浸漬すると共に、前記底部絶縁板がほぼ水平となるようにめっきドラムを保持しながら回転駆動させ、該めっきドラムの回転遠心力により、前記めっき槽中と前記めっきドラム内部とでめっき液を対流させると共に、前記めっきドラムの回転駆動における正転工程と逆転工程の定速回転中に前記陰極リングにチップ形電子部品を集合させて接触通電し、かつ該回転の徐速または減速及び停止による攪拌・混合と離散とを繰り返すことで所望のめっき膜を形成することを特徴とする電子部品の電気めっき方法。 At least a cathode ring attached to the inner wall of the insulating ring, a bottom insulating plate for sealing the bottom of the insulating ring, an upper insulating plate fixed to the upper side of the insulating ring, and the upper insulating plate to the inside of the plating drum A plating drum having a through-hole through which a plating solution can enter and exit is accommodated with a chip-type electronic component that is an object to be plated. The plating drum is immersed in a plating tank provided with an anode, and the bottom insulating plate is substantially horizontal. The plating drum is rotated while being held so that the plating solution is convected by the rotating centrifugal force of the plating drum in the plating tank and inside the plating drum, and the forward rotation in the rotation driving of the plating drum is performed. During the constant speed rotation of the process and the reverse rotation process, the chip-type electronic components are assembled on the cathode ring and contacted with electricity, and the rotation is slowed down, decelerated, and stopped. Electroplating method of an electronic component and forming a desired plated film by repeating the discrete and 拌 and mixing.
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