TWI495765B - Plating device - Google Patents

Description

Plating device

The present invention relates to a plating apparatus for a substrate particle having conductivity on a surface.

As an example of a technique of performing electroplating on a substrate particle having conductivity on the surface, there is a method of forming a solder-coated Cu core ball (hereinafter abbreviated as a Cu core ball) by plating a solder on a surface of a core ball mainly composed of Cu. Technology. Further, in order to clarify the problems of the prior art, the electroplating technique is described by taking a Cu core ball as an example, but the present invention is not limited to the Cu core ball.

In recent years, semiconductor packages such as Ball Grid Array (BGA) or Chip Scale Package (CSP) have been advanced in high-density packaging by multi-pitch and narrow pitch. In the case of the bump for the input/output terminal, a Cu core ball having a small diameter is applied.

Since the Cu core ball does not melt during reflow soldering, it can maintain a fixed distance between the semiconductor element and the substrate, and can secure a thermal cycle load due to starting and stopping of the semiconductor element. Connection reliability.

As a Cu core ball manufacturing technique, a barrel plating method is known in which a core ball is housed in a cylinder having a plurality of openings through which a plating liquid can flow, and the tube is covered by soldering in a plating bath. However, especially when a Cu core ball having a small diameter of 100 μm or less is manufactured, the agitation of the core ball caused by the rotation of the core ball accompanying the rotation of the cylinder is insufficient. As a result, the core balls are connected and aggregated via the plating layer, or the surface of the plating layer is roughened, and the thickness of the plating layer is locally uneven, resulting in a problem of a decrease in yield.

An example of a technique for eliminating the problem of the barrel plating method is described in Patent Document 1. Patent Document 1 discloses a small-sized rotary plating apparatus in which a contact ring and a porous ring are integrally joined to form a cell in order to obtain a sufficient and uniform plating layer in a short time. The contact ring presses the plated material between the lower surface of the outer peripheral portion of the lower open bowl-shaped doom having the open upper end and the upper surface of the outer peripheral portion of the resin base plate during the rotation, and the porous ring circulates the treatment liquid. Fixing the upper end of a conductive drive shaft that is perpendicular to the lower surface of the central portion of the conductive plate that supports the unit and that is electrically connected to the contact ring, and presses a contact brush to the shaft And connected to a minus pole, an anode basket is disposed in the above-mentioned dome, and a cover covering the unit is provided. Further, according to the rotary plating apparatus having such a configuration, the object to be plated stored in the unit is forcibly pressed to the contact ring by the centrifugal force generated by the rotation of the unit, and the rotation or stop or deceleration of the reverse unit is performed. With uniform mixing, the renewal of the plating solution on the surface of the plated material also becomes active, so that a plating layer having a uniform thickness can be formed.

However, the rotary plating apparatus of Patent Document 1 has a problem in industrial production efficiency. That is, in order to stir the electroplated material, the electroplating apparatus sufficiently circulates the plating liquid to the surface thereof, and it is necessary to repeatedly rotate, stop, or decelerate the unit. Further, the actual plating treatment of the object to be plated is performed only during the period in which the unit is rotated and the plated material is in contact with the contact ring by the centrifugal force, and is not performed during the period of stopping or decelerating, so that compared with the plating treatment time The overall manufacturing time is longer. Further, in the plating treatment, since the stirring force of the ball does not function, in particular, in the case of a Cu core ball having a diameter of 100 μm or less used in a semiconductor package, the aggregation of the core ball in the cell becomes Significantly, the smoothness of the surface of the Cu core ball after the plating treatment also deteriorated. In order to eliminate the aggregation, there is a method in which the rotation, stop, or deceleration of the unit is frequently repeated, but the plating efficiency is further lowered.

Further, another example of a technique for eliminating the problem of the barrel plating method is described in Patent Document 2. Patent Document 2 discloses an electroplating apparatus which aims to prevent deformation of a work having particularly flexible properties during plating, and the like, which is characterized in that "the plating chamber having the opening as the upper surface and the occlusion are provided The loading and unloading cover having an open upper surface of the plating tank includes a cathode on a bottom surface of the plating tank, an anode on a back surface of the loading and unloading cover, and a circumferential wall facing the bottom surface of the plating tank. Spray nozzle (nozzle) of the plating solution. Further, Patent Document 2 discloses that the workpiece placed in the plating tank is rotated in the plating tank together with the plating solution sprayed from the injection nozzle, and is subjected to plating treatment in accordance with the rotation. There is no collision or the like which causes bending or deformation, and all the workpieces can be finished in the state of maintaining the original shape.

However, the plating apparatus of Patent Document 2 is insufficient in forming a plating layer having a uniform thickness on the substrate particles. That is, when the substrate particles are plated by the plating apparatus of Patent Document 2, the substrate particles are stirred by the plating solution swirled in the plating tank on the one hand, and the swirling motion is performed on the one hand, but the particles are multiplied by the liquid flow. When moving, the probability that the electrode disposed on the bottom surface is in contact with the particles is small, and the probability is not uniform for each particle. As a result, there is a possibility that the thickness of the plating layer is different for various substrate particles.

Furthermore, in the following Patent Document 3, a device for coating a metal on a surface of a fine powder such as a metal or an inorganic material having a particle diameter of 0.1 μm to 10 μm in a uniform and high-yield manner by a plating method is disclosed. There is a "micro-powder electroplating apparatus comprising: a cylindrical container for accommodating a plating solution and longitudinally arranging a shaft, a cathode plate for arranging a conductive surface at a bottom portion of the container, and a liquid surface adjacent to the plating solution; The anode, a power supply device that supplies a predetermined potential between the cathode plate and the anode, and a suction pipe having a suction opening in the liquid between the cathode plate and the anode, and a liquid is discharged from the liquid between the cathode plate and the anode. a discharge passage of the opening, a circulation path of the fluid from the suction pipe to the discharge pipe, and a pump for fluid circulation interposed in the circulation path, the discharge opening of the discharge pipe is directed toward the conduction surface of the cathode plate The direction of the suction pipe is set downward, and the suction opening of the suction pipe is disposed below the lower end of the anode, so that the conductive fine powder having a particle diameter of 0.1 μm to 10.0 μm as an electroplated product and plating are provided. Together circulates in the circulation path, while continuously to the cathode collision plate. " Further, according to the plating apparatus, it is described that a fine powder suspension having a predetermined suspension concentration and having a predetermined suspension concentration in the plating solution is suspended in the plating solution, and the fine powder suspension liquid is substantially formed. The upper surface is not in contact with the anode, but only collides with the cathode plate at a predetermined speed component, so that the surface of each fine powder can be plated uniformly and in high yield.

However, according to the plating apparatus of Patent Document 3, since the fine powder flows only by the fine powder suspension flow, the probability of contact with the cathode plate is not uniform between the fine powders, and the reason is the same as that of the plating apparatus of Patent Document 2. It is not sufficient to form a plating layer having a uniform thickness on each of the substrate particles.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 8-239799

[Patent Document 2] Japanese Patent Publication No. 7-6267

[Patent Document 3] Japanese Patent Laid-Open No. 1-272792

The present invention has been made in view of the above problems of the prior art, and an object thereof is to provide a plating apparatus capable of efficiently forming a plating layer having a uniform thickness on a substrate particle having conductivity on a surface.

An electroplating apparatus of the present invention which solves the above problems is an electroplating apparatus having surface-conducting substrate particles, comprising: a plating bath having a plating chamber having a bottom surface on which the substrate particles can be contacted and circulated, and along a peripheral wall surface of the bottom surface of the bottom surface, and a particle group including the substrate particles and a plating solution; the plating solution supply pipe having a supply port opened upward from a bottom surface of the plating chamber, and along the plating a plating solution is supplied from the supply port by a circumferential wall surface of the chamber; a plating solution discharge pipe having a discharge port opening to the plating chamber; and a cathode contacting the substrate particles disposed on a bottom surface of the plating chamber; A position is placed in the plating solution accommodated in the plating chamber; and a power source is connected to the cathode and the anode.

The plating apparatus functions as described below. That is, the plating solution supplied from the supply port of the plating solution supply pipe is swirled along the peripheral wall surface of the plating chamber and flows downward toward the bottom surface side thereof. Further, when the plating chamber is filled with the plating solution, it is discharged from the plating solution discharge pipe through the discharge port opened to the plating chamber, and a new plating solution is supplied from the plating solution supply pipe, whereby the plating chamber is always freshly plated. The liquid is full.

The swirling flowing plating solution that reaches the bottom surface of the plating chamber causes the particle group accommodated in the plating chamber to contact the bottom surface of the plating chamber and to rotate. The substrate particles that are in contact with the cathode on the bottom surface are plated between the anodes disposed at the positions immersed in the plating solution to form a plating layer on the surface of the substrate particles. Here, by swirling the flowing plating solution, the particle groups do not disperse and mix with each other, and contact the bottom surface to rotate and perform a whirling motion on the bottom surface. Therefore, the aggregation of the substrate particles is suppressed, and the chances of the respective portions of the surface of the substrate particles contacting the plating solution become equal, and as a result, a plating layer having a uniform thickness can be formed. Furthermore, once the particles that begin the convoluted motion do not float, they repeatedly contact the bottom surface intermittently and continue to rotate.

Further, by the swirling flow of the plating solution, the substrate particles are brought into contact with the bottom surface of the plating chamber and rotated, so that the probability of the substrate particles coming into contact with the other substrate particles is increased, and thus the substrate particles contacting the cathode can be electrically exchanged at a high frequency. The connection is performed, and the treatment of the continuous plating is performed, so that the plating layer can be efficiently formed on the substrate particles, and further, the formed plating layer is smoothed by the contact of the substrate particles, and the surface can be formed extremely A smooth and uniform thickness of the plating layer.

[Effects of the Invention]

As described in the above description, the electroplating apparatus according to the present invention can attain the object of the invention, that is, to solve the problems of the prior art, and to provide a surface which can be efficiently and smoothly formed on the surface of the substrate having conductivity on the surface. Electroplating device for the thickness of the plating layer. In the following, preferred embodiments of the plating apparatus and effects thereof will be described in detail.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Hereinafter, the plating apparatus of the present invention will be described with reference to the drawings based on the first to sixth embodiments. In the following embodiments, a plating apparatus in which a plating layer mainly composed of Sn is a surface of a spherical core ball having Cu as a main component is described as an example. However, the present invention is not limited thereto. For example, it can be applied to a surface of a resin or ceramics particle having a conductive metal layer such as nickel formed on the surface by electroless plating, and other surface of the substrate particle having conductivity on the surface. A case where a metal coating layer is formed by electroplating. Further, it can be applied not only to substrate particles having a spherical shape like a core ball but also to needle-shaped substrate particles having a long axis and a short axis or amorphous substrate particles having no shape characteristics. Further, each component of the plating apparatus described below may be used singly or in an appropriate combination.

[First Embodiment]

FIG. 1 is a front view showing a schematic configuration of a plating apparatus according to a first embodiment, and FIG. 2(a) is a plan view showing a state in which the sealing lid 1L of FIG. 1 is removed. The plating apparatus 1 includes a main body 1a and a plating solution. The plating pipe 1e and the plating liquid discharge pipe 1c are connected to the plating liquid circulation mechanism 1b of the main body 1a and the DC power supply circuit 1h as a basic configuration. The plating apparatus 1 is provided with a core ball supply mechanism 1g and vibration. Mechanism 1i and magnetic force generating mechanism 1s.

In the main body portion 1a, reference numeral 1j is a plating tank in which a plating chamber 1m is formed, and the plating chamber 1m has a circular bottom surface 1p and a truncated cone-shaped peripheral wall surface 1q which is reduced in diameter toward the bottom surface 1p. The plating tank 1j which consists of a resin which is a non-conductive insulating material which has corrosion resistance to a plating liquid, has the bowl-shaped container 1k of the upper opening, and the sealing of the upper surface of the container 1k so that the upper opening may be closed. Cover 1L. The space formed by the container 1k and the sealing lid 1L constitutes a plating chamber 1m, and a ball group (particle group) 9 including a plurality of core balls 91 and a predetermined amount of plating liquid L are accommodated in the plating chamber 1m.

One end of the plating solution supply pipe 1e is horizontally connected to the plating tank 1j so that its axial center is along the tangential direction of the peripheral wall surface 1q of the plating chamber 1m, and the plating solution supply port 1f is opened at the upper portion of the plating chamber 1m. One end is connected to the plating liquid circulation mechanism 1b. One end of the plating solution discharge pipe 1c is connected to the plating tank 1j so that the plating liquid discharge port 1d is opened to the plating chamber 1m coaxially with the core of the plating chamber 1m at the center portion of the sealing lid 1L, and the other end thereof is connected to Plating solution circulation mechanism 1b. The plating solution circulation mechanism 1b is composed of a plating liquid storage tank (not shown), a plating liquid circulation pump, a plating liquid purification filter (filter), a flow rate control valve, and the like, and a plating liquid sent from the plating liquid circulation mechanism 1b. L flows through the plating solution supply pipe 1e, is supplied from the plating solution supply port 1f to the plating chamber 1m, and swirls along the peripheral wall surface 1q of the plating chamber 1m as indicated by a broken line a in Fig. 1 and Fig. 2(a). Flow down. Further, the plating solution circulation pump or the flow rate control valve of the plating solution circulation mechanism 1b can be adjusted so that the flow rate or flow rate of the plating solution L supplied to the plating chamber 1m changes with time. Further, the plating solution circulation mechanism 1b may be provided so that the plating solution L can be supplied from the plating chamber 1m not only by the plating solution supply pipe 1e but also by the plating solution discharge pipe 1c. Further, a plurality of the plating solution supply pipes 1e may be provided. In this case, the plating solution supply pipe may be disposed such that the plurality of plating solution supply ports 1f are opened at a fixed angular interval on the same circumference of the peripheral wall surface 1q of the plating chamber 1m, as shown in FIG. 4(c). In the plating apparatus 22 as shown, the plating solution supply pipe 22e is disposed such that the plurality of plating solution supply ports 22f are opened along the spiral flow a of the plating solution L under the swirling flow. According to the above configuration, as shown in FIG. 1, the plating solution L swirls along the peripheral wall surface 1q which is inclined downward, and flows downward in a spiral shape to reach the bottom surface 1p of the plating chamber 1m, and then, as shown in FIG. As shown by the broken line b, the upward flow is formed, and is discharged from the plating solution discharge pipe 1c through the plating solution discharge port 1d, and is returned to the plating solution circulation mechanism 1b.

Further, the core ball 91 may be opened and closed to the plating chamber 1m at any time, but as shown in FIG. 1, a predetermined number of core balls may be provided in the supply system including the plating solution supply pipe 1e. The supply mechanism 1g of 91 supplies the core ball 91 together with the plating solution L to the plating chamber 1m through the piping of the plating solution supply pipe 1e. The specific configuration of the supply mechanism 1g will be described in detail in the plating apparatus of the fourth aspect.

Reference numeral 1n is a disk-shaped cathode disposed at the bottom of the container 1k, and the upper surface of the cathode 1n is provided as a bottom surface 1p of the plating chamber 1m. The cathode 1n connected to the negative electrode of the DC power supply circuit 1h is formed of, for example, stainless steel, titanium, titanium plated with platinum, or the like. The ball group 9 is rotated by the plating liquid L in the plating chamber 1m, as shown by the symbol C in the figure, and is in contact with the bottom surface 1p on the one hand in the predetermined range from the outer peripheral end in the radial direction. Thereby, the core ball 91 is rotated above the bottom surface 1p while being stirred.

Here, as shown in FIG. 3(a), the cathode 3n may be disposed to be exposed to a part of the bottom surface 3p of the plating chamber 1m, or the cathode 3m may be disposed and disposed as shown in FIG. 3(b). The core balls 91 on the bottom surface 3p are in contact. However, when the cathodes 3n, 3m are disposed so as to be in contact with only a very small portion of the plurality of core balls 91, the core balls 91 not in contact with the cathodes 3n, 3m pass through the core balls 91 in contact with the cathodes 3n, 3m. When the current is applied, there is a possibility that the potential of the core ball 91 at a position away from the cathode 3n is lowered due to the contact resistance of the core balls 91, and the current density in the core ball 91 becomes low, so that the plating efficiency is lowered. Therefore, it is preferable that the cathode and the ball group 9 have a sufficient contact area in plan view, and it is preferable to form a disk shape as in the present embodiment. In this case, the container 1k itself may be formed of a cathode material, and the side surface of the container 1k may be coated with a resin having corrosion resistance and insulation, so that the bottom surface of the container 1k functions as the cathode 1n.

On the other hand, as shown in Fig. 1 and Fig. 2(a), when the bottom surface 1p of the plating chamber 1m is entirely composed of the cathode 1n, the formation speed of the plating layer may be lowered. In other words, the ball group 9 is swirled in the predetermined region C of the outer peripheral edge portion of the bottom surface 1p (the upper surface of the cathode 1n) by the swirling flowing plating liquid L, and therefore the upper surface of the cathode 1n of the ball group 9 is not present. The central government will also unconditionally deposit plating. Therefore, it is preferable that, as shown by the symbol 2n in FIG. 2(b) and a cross-sectional view along the center line thereof, FIG. 2(c), the region where the cathode and the ball group 9 make a whirling motion corresponds to a ring. The outer peripheral edge of the bottom surface 2p is provided, and the central portion 2z of the bottom surface 2p is made of an electrically insulating material. In the case of FIG. 2(b) and FIG. 2(c), the central portion 2z is integrally formed with the container 1k. For example, the central portion 2z may be formed separately from an insulating ceramic or the like. Into the container 1k.

Further, as shown in FIG. 2(c), the cathode 2n may have not only the first cathode 2y which is exposed on the surface of the container 1k so as to form the same plane as the bottom surface 2p, but also the surface thereof to be formed. The second cathode 2x is exposed so that the peripheral wall surface 1q is the same inner peripheral surface. As shown in the figure, the cathodes 2x and 2y can be placed in the container 1k as cathodes 2n joined at their respective ends in a "<" shape in a cross section. By providing the second cathode 2x, the ball group 9 that reciprocates in the peripheral portion of the bottom surface 2p as the plating liquid flows can be brought into contact with the second cathode 2x, so that the area of the cathode 2n that the ball group 9 can contact can be made. When the increase is made, a uniform plating layer can be formed on the core ball 91 while maintaining high plating efficiency. Further, by combining with the anode structure of the plating apparatus according to the sixth embodiment to be described later, the electric resistance between the anode and the cathode can be reduced, and a favorable plating layer having reduced defects such as voids can be formed. Further, in order to prevent deposition of plating on the surface of the cathode 2n to improve plating efficiency, it is preferable that the cathode 2n is included in the range C in which the cluster 9 is swirled as shown in Fig. 2(c). Further, the cathode 2n shown in Fig. 2(b) is formed in a circular ring shape continuous in the circumferential direction. However, even if a portion has a discontinuous portion, it may be formed substantially in an annular shape.

Further, in order to improve the smoothness of the outer surface by rubbing the outer peripheral surfaces of the plating layer formed on the surface of the core ball 91 by the rotation of the core ball 91, the bottom surface 1p of the plating chamber 1m (that is, the cathode) can be used. The upper surface of 1n) sets a fixed rough surface. On the other hand, from the viewpoint of preventing damage to the surface of the core ball 91 or the surface of the plating layer caused by friction with the bottom surface 1p of the plating chamber 1m, the bottom surface 1p may be a smooth surface. Further, as shown in Fig. 3(c), in order to stabilize the swirling motion of the core ball 91 on the bottom surface 1p of the plating chamber 1m, it is preferable to form an annular guide groove 4y on the bottom surface 1p. The guide groove 4y is formed along the swirling direction of the plating solution L to guide the core ball 91.

In Fig. 1, reference numeral 1o is an anode containing tin disposed opposite to the cathode 1n in the upper portion of the plating chamber 1m. The anode 1o is fixed to the hermetic cover 1L via a support member 1r such as stainless steel, titanium, or platinum-plated titanium, and is connected to the DC power supply circuit 1h so as to be immersed in the plating solution L filled in the plating chamber 1m. The positive pole.

Here, a preferred embodiment of the anode will be described below. When the plurality of core balls 91 are plated, the sum of the surface areas of all the core balls 91 becomes very large. In order to allow a fixed current to flow between the plurality of core balls 91 and the anode, and to ensure a prescribed current density (ie, a value obtained by dividing the current value by the sum of the surface areas of the core balls 91), the core ball 91 is thereby used. The plating layer is uniformly and efficiently formed, and preferably, the lower surface of the anode 1o and the upper surface of the cathode 1n are disposed in an opposing manner, and the range C of the cluster 9 including the swirling motion on the cathode 1n is disposed. In the manner of a ring shape, the anode 1o is formed. Further, as shown in Fig. 4(a), a front cross section of the upper right portion of the main body portion 1a, a surface area with the core ball 91 can be formed on the anode 14o by providing irregularities on the bottom surface of the anode 14o opposed to the cathode. The corresponding area. Further, when it is desired to further increase the surface area of the anode, the anode portion 15o may be formed as shown in Fig. 4(b). The anode portion 15o has an anode which is connected to the positive electrode of the DC power supply circuit and is composed of a plurality of conductive particles 15y, and a substantially annular shape which is fixed to the sealing lid 1L via a support member and accommodates the plurality of conductive particles 15y. Conductive particle storage container 15x. Preferably, the mesh-shaped conductive particle storage container 15x made of a non-conductive material such as a resin has an opening through which the plurality of conductive particles 15y cannot pass, and the plating solution can flow, and the bottom surface and the bottom surface are not shown. The cathodes are opposed to each other and are disposed above the plating solution supply port 1f so as not to impede the flow of the supplied plating solution. Further, the conductive particle storage container 15x may be made of a conductive material such as stainless steel, titanium, or platinum-plated titanium. The conductive particles 15y accommodated in the conductive particle storage container 15x can be appropriately selected depending on the material to be plated on the core ball. For example, when the core ball is plated with tin, particles made of tin are selected. According to the anode portion 15o of this aspect, since the anode is constituted by the plurality of conductive particles 15y, an anode having a compact but large surface area can be formed as compared with the case of the flat anode. The surface area of the anode can be freely adjusted by adjusting the size or the number of the respective conductive particles 15y.

In Fig. 1, reference numeral 1i is a vibration mechanism disposed on the bottom surface side of the container 1k. In a preferred embodiment of the plating apparatus of the present invention, the vibration mechanism 1i to be incorporated is specifically a vibration mechanism that applies vibration to the container 1k at a predetermined frequency, and the vibration or the core ball 91 is prevented from adhering to each other or the core. The ball 91 is attached to the bottom surface 1p, and the attached core ball 91 is separated to prevent aggregation of the core ball 91.

The symbol 1s is a magnetic force generating mechanism disposed below the plating tank 1j. The magnetic force generating means 1s is a component which is effective when the core ball 91 has magnetism or when the plating layer coated on the core ball 91 is magnetic, for example, Ni or Fe, and the core ball 91 is formed by magnetic force. The core ball 91 of the plating layer is attracted downward to contact the bottom surface 1p of the plating chamber 1m (the upper surface of the cathode 1n) and to perform a whirling motion. Further, the magnetic force generating mechanism 1s may be provided on the outer periphery of the lower side of the plating tank 1j. Further, in order to prevent the core ball 91 from being dispersed by the ball group 9 staying in the swirling region C, the magnetic force generating mechanism 1s is preferably constituted by a substantially annular permanent magnet having a size corresponding to the swirling range C.

The operation of the plating apparatus 1 described above will be described. The first is the preparation step. In the preparation step, the sealing cover 1L is opened, a predetermined number of core balls 91 are placed on the bottom surface 1p of the plating chamber 1m (the upper surface of the cathode 1n), and the plating solution L is stored in the plating solution storage tank of the plating liquid circulation mechanism 1b. Inside. Further, as the core ball 91, a core ball which is cleaned by pickling treatment may be used, and a core ball having a nickel plating layer as a base layer formed on the surface as needed may be used. In addition, the plating solution for solder plating can be, for example, a product of the product "DAIN TINSIL SBB 2" manufactured by Yamato Chemical Co., Ltd. having a liquid composition of Sn-Ag-Cu type, or a product name "SOLDERON BP SAC5000" manufactured by Rohm and Haas. An additive is added thereto, and is appropriately adjusted to be used in a well-known plating bath such as a borofluoride bath. The particles constituting the ball group 9 are not limited to the core ball 91. For example, a conductive ball mainly composed of solder or steel or a non-conductive ball containing resin or ceramics may be added in an appropriate amount. As a stirring accelerator for promoting the stirring of the ball group 9, for example.

After the sealing lid 1L is closed and the plating chamber 1m is placed in a sealed space, the plating apparatus 1 is actuated. The plating apparatus 1 operates the plating liquid circulation mechanism 1b to supply the plating liquid L to the plating chamber 1m at a predetermined flow rate through the plating liquid supply pipe 1e. When the plating chamber 1m is filled with the plating solution L, the plating solution L is swirled along the peripheral wall surface 1q of the plating chamber 1m, and swirls a downwardly flowing toward the bottom surface 1p along the inclination of the peripheral wall surface 1q. Further, in the initial stage of the supply of the plating solution L, the flow of the plating solution L is unstable, and therefore the core ball 91 may flow out of the plating chamber 1m by the flow of the unstable plating solution L. In order to prevent the outflow of the core ball 91, it is preferable that the plating chamber 1m is previously filled with the plating solution L in the preparation step, and then the plating solution L is supplied to the plating chamber 1m. Further, it is preferable that the flow rate of the plating solution L can be reduced and gradually increased to a predetermined flow rate in the initial stage of the supply of the plating solution L.

The plating solution L swirling in the plating chamber 1m along the peripheral wall surface 1q of the plating chamber 1m having a truncated cone shape which is reduced in diameter downward increases the swirling speed as it approaches the bottom surface 1p, and reaches the bottom surface 1p. The swirling flow a of the plating solution L reaching the bottom surface 1p presses the ball group 9 contacting the bottom surface 1p against the bottom surface 1p and performs a swirling motion. Here, the core ball 91 contained in the ball group 9 is in contact with the bottom surface 1p, that is, the upper surface of the cathode 1n connected to the negative electrode of the DC power supply circuit 1h, so that plating treatment is performed between the anodes 1o, thereby being in the core The surface of the ball 91 forms a plating layer. In addition, the plating liquid L that has reached the bottom surface 1p of the plating chamber 1m becomes the upward flow b in the central portion of the bottom surface 1p, is discharged from the plating liquid discharge pipe 1c through the plating liquid discharge port 1d, and is returned to the plating liquid circulation mechanism 1b, so that there is always freshness. The plating solution L is supplied to the plating chamber 1m, so that the state of the plating solution L in the plating chamber 1m can be always fixed, and as a result, a plating layer having a uniform thickness can be formed on the surface of the core ball 91. Further, it is preferable that after the plating chamber 1m is filled with the plating solution L, the plating solution L is sucked by the plating solution discharge pipe 1c because the swirling flow of the plating solution L can be further rectified. Thereby, the whirling motion of the core ball 91 is stabilized.

The core ball 91 that contacts the bottom surface 1p of the plating chamber 1m and rotates is rotated on the bottom surface 1p, and the core balls 91 collide with each other in a frictional manner, so that the core balls 91 are hard to adhere to each other, thereby preventing aggregation of the core ball 91, and The chance of the surface of the core ball 91 contacting the bottom surface 1p by rotation is made uniform, so that a plating layer having a uniform thickness can be formed. Here, it can be presumed that the plating layer is gradually formed on the surface of the core ball 91 when it is indirectly contacted with the cathode 1n directly or via other core balls 91 during the plating process. Therefore, in the initial stage of the plating treatment, a plating layer is formed only on a part of the surface. If the rotation of the core ball 91 is insufficient, a plated Cu core ball may be coated on the core ball 91 by forming a plating layer m having a projection as shown in Fig. 14(a). It is conceivable that the protruding portion of the plating layer is a result of selectively forming a plating layer starting from a plating layer initially formed on a part of the surface of the core ball 91. However, by causing the core ball 91 to rotate sufficiently to cause the core balls 91 to collide with each other, the smoothing effect of the surface of the plating layer can be produced as shown in FIG. 14(b), that is, other core balls that utilize rotation 91b to rub the plating layer m1 formed on a part of the surface of the core ball 91a to spread it to prevent selective formation of a plating layer on a part of the surface, so that the surface can be formed extremely smooth and the internal void of the plating layer (void) less uniform thickness of the plating layer. Such a Cu core ball having a plating layer and having a very high sphericity is particularly suitable when it is used as a connecting member for a flip chip.

Further, when the core ball 91 is supplied to the plating chamber 1m by using the core ball supply mechanism 1g shown in Fig. 1, the core ball 91 is rotated by the swirling flowing plating liquid L, and is pressed by the centrifugal force. It is lowered by 1q on the peripheral wall surface and descends to the bottom surface 1p of the plating chamber 1m, so that a stable and stable swirling motion can be maintained.

In the above state, the core ball 91 is subjected to a plating treatment for a predetermined period of time to form a Cu core ball having a solder plating layer having a predetermined thickness. From the viewpoint of preventing aggregation of the core ball 91, it is advantageous to appropriately adjust the plating solution circulation pump or the flow rate adjustment valve of the plating solution circulation mechanism 1b so that the flow rate or flow rate of the plating solution L supplied in the plating process occurs over time. The vibration is applied to the ball group 91 by the vibration mechanism 1i via the container 1k.

A plating apparatus of a preferred embodiment of the plating apparatus 1 will be described with reference to Figs. 5 and 6(a) and 6(b). In FIGS. 5 and 6(a) and 6(b), the same components as those of the plating apparatus 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

The plating apparatus 5 shown in FIG. 5 is in a state in which the plating liquid discharge pipe 5c is disposed so as to protrude into the plating chamber 1m through the center portion of the sealing cover 1L, and the plating liquid discharge port 5d is oriented in the axial direction. The upper portion of the plating chamber 1m is located, specifically, the plating solution discharge port 5d is located below the plating solution supply port 1f, and further, the plating solution discharge pipe 5c can be along the axial direction as indicated by the arrow d. mobile. As shown in FIG. 5, when the anode 5o is disposed on the outer peripheral surface of the plating solution discharge pipe 5c, it is preferable that the anode 5o is disposed so as not to protrude from the outer peripheral surface of the plating solution discharge pipe 5c. According to the plating apparatus 5, since the plating solution discharge port 5d is close to the bottom surface 1p of the plating chamber 1m, the upward flow b of the plating solution L is discharged in the vicinity of the bottom surface 1p, and the influence of the upward flow b on the swirling flow a is suppressed. The whirling motion of the core ball 91 on the bottom surface 1p is stabilized. Further, in the initial stage of the supply of the plating solution L, the protruding length of the plating solution discharge pipe 5c from the sealing lid 1L is shortened until the swirling flow a of the plating chamber 1m is stabilized, and after the swirling flow is stabilized, the plating liquid discharge pipe 5c is turned to Moving downward and lengthening the protruding length of the self-sealing cover 1L and positioning it to a predetermined position, thereby preventing the core ball 91 from flowing out to the plating chamber from the stage before the plating process of the plating solution L to the plating chamber 1m until the plating process is completed. 1m away. In the case of a plating apparatus that rectifies a plating solution that swirls in a plating chamber or a plating apparatus that supplies a core ball to a plating chamber, as in the plating apparatus of the second to fourth aspects, which will be described later, The plating solution discharge pipe 5c may be fixed to the sealing cover 1L so as to be disposed in the vertical direction as shown in the figure, so that the plating solution discharge port 5d is disposed in the vicinity of the upper surface of the bottom surface 1p.

The plating apparatus shown in Fig. 6(a) is a form in which a bottom surface 6p (an upper surface of the cathode 6n) is formed in a conical shape in the plating chamber 1m so that the central portion is higher in the radial direction with respect to the peripheral portion. According to the plating apparatus of this aspect, the ball group 9 stably swings at the peripheral portion where the height of the bottom surface 6p is low, whereby the concentration of the ball on the bottom surface 6p can be increased. Further, as shown in FIG. 6(b), the bottom surface 7p (the upper surface of the cathode 7n) having the columnar projections 7y is formed in the plating chamber 1m so that the central portion is higher in the radial direction with respect to the peripheral portion. The same effect can be exerted. However, in this case, it is preferable to form a taper surface on the upper periphery of the projection 7y so as not to impede the flow of the plating solution L.

[Second Embodiment]

Hereinafter, a plating apparatus according to a second embodiment will be described with reference to FIGS. 7(a), 7(b), 8(a), and 8(b). Further, in FIGS. 7(a), 7(b), 8(a), and 8(b), the plating apparatus 1 of the first aspect and the plating apparatus 5 of the preferred embodiment are the same. The constituent elements are denoted by the same reference numerals, and detailed descriptions thereof will be omitted (the same applies to the plating apparatuses of the third to sixth aspects).

As shown in Fig. 7 (a), the plating apparatus 8 of the second embodiment is different from the plating apparatus 1 of the first embodiment in that the plating chamber 1m formed in the same manner as the first embodiment has a guiding mechanism 8v. The guiding mechanism 8v of Fig. 7(a) is provided to guide the plating liquid L supplied through the plating solution supply port 1f toward the bottom surface 1p of the plating chamber 1m. That is, the guiding mechanism 8v is a guiding plate 8w made of a non-conductive material formed with a spiral which is a plating liquid L which swirls along the peripheral wall surface 1q of the plating chamber 1m and flows down toward the bottom surface 1p. The flow line a extends in the direction. The upper portion 8x is disposed below the plating solution supply port 1f, and the guide plate 8w disposed at a predetermined gap between the lower portion 8y and the bottom surface 1p of the plating chamber 1m is wound around the plating solution discharge pipe 5c of the sealing cover 1L in the longitudinal direction. The outer peripheral surface is in close contact with the peripheral wall surface 1q. Further, in order to smoothly discharge the plating solution L from the plating chamber 1m, the lower end of the guiding mechanism 8x is preferably located above the plating solution discharge port.

According to the guide plate 8w, the plating solution L supplied from the plating solution supply port 1f is spirally branched by the guide plate 8w, the outer peripheral surface of the plating solution discharge pipe 5c, and the peripheral wall surface 1q of the plating chamber 1m. Among the passages 8z, as shown by a broken line a, the flow flows from the upper side toward the lower side, and is guided to the bottom surface 1p of the plating chamber 1m. Here, the guide plate 8w is formed in a spiral shape along the flow line a of the plating solution L supplied from the plating solution supply port 1f and swirled down, and the flow path 8z is formed as a closed passage, and therefore, The plating solution L supplied from the plating solution supply port 1f or the flowing plating solution L interfere with each other to cause turbulent flow of the plating solution L under the swirling flow, and the rectified plating solution L reaches the bottom surface 1p. Further, as shown by the symbol b2 in the figure, even if a part of the flow b of the plating solution L which is an upward flow toward the plating solution discharge port exists outside the plating solution discharge pipe 5c due to the discharge from the plating solution discharge pipe 5c, The flow is also blocked by the lower portion 8y of the guide plate 8w, so that the flow a of the plating solution L under the swirling flow is not disturbed. As a result, the swirling motion of the ball group on the bottom surface 1p is stabilized, so that a Cu core ball having a uniform plating layer can be formed.

Further, as in the plating apparatus 16 shown in FIG. 7(b), which is a modification of the plating apparatus 8, the plating liquid L may be swirled on the peripheral wall surface 1q, and the guide plate 16w may be in the radial direction to A fixed gap 16z is formed between the outer peripheral surfaces of the plating solution discharge pipe 5c, and is disposed in the plating chamber 1m. However, in order to function to smoothly guide the swirling flow a of the plating solution L to the guide plate 16w of the bottom surface 1p, it is desirable that the width of the gap 16z is not arbitrarily made so that the swirling flow a does not leak from the gap 16z. The passage is made larger, and the passage through which the plating solution L flows is formed as close as possible.

The plating apparatus 10 shown in FIGS. 8(a) and 8(b) is another example of the plating apparatus of the second aspect, and has a guide body 10w as the guide mechanism 10v. The guide body 10w having the bottom surface 10z and being made of a non-conductive material having a substantially truncated conical shape has an outer peripheral surface 10x of the peripheral wall surface 1q of the plating chamber 1m having a substantially conical shape which is reduced in diameter toward the bottom surface 1p. The guide body 10w which is joined to the sealing lid 1L at the upper portion has a plating solution discharge pipe 5c which is fixed to the sealing lid 1L and extends in the longitudinal direction at the center portion, and the plating liquid discharge pipe 5c is surrounded by the outer peripheral surface 10x. Further, the guide body 10w is disposed in the plating chamber 1m in the horizontal direction so that the outer peripheral surface 10x faces the peripheral wall surface 1q of the plating chamber 1m via the gap 10y of the fixed dimension g. Further, in the longitudinal direction, since the ball group 9 is provided in a region where the swirling motion can be performed on the bottom surface 1p of the plating chamber 1m, the bottom surface 10z of the guide body 10w has a predetermined gap with respect to the bottom surface 1p of the plating chamber 1m. And configuration. Further, in the plating apparatus 10 of the present embodiment, the anode 10o mainly composed of tin is provided on the bottom surface 10z of the guide body 10w.

By arranging the guide body 10w as the above-described guide mechanism in the central portion of the plating chamber 1m, the same function as the above-described guide plate 8w can be exhibited. In other words, the plating solution L supplied from the plating solution supply port 1f is in the gap 10y formed by the outer peripheral surface 10x of the guide body 10w and the peripheral wall surface 1q of the plating chamber 1m, as shown by a broken line a, from the upper side toward the lower side. The swirling flow is carried out and guided to the bottom surface 1p of the plating chamber 1m. Since the plating solution L under the swirling flow flows in the relatively narrow gap 10y surrounded by the outer peripheral surface 10x of the guide body 10w and the peripheral wall surface 1q of the plating chamber 1m, it is not caused by the plating solution supply port 1f. The supplied plating solution L or the flowing plating solution L interfere with each other to cause turbulent flow of the plating solution L under the swirling flow, and the rectified plating solution L reaches the bottom surface 1p. Further, as shown in the diagram b2, even if a part of the flow b of the plating solution L which is the upward flow toward the plating solution discharge port 5d is discharged from the plating solution discharge pipe 5c, the flow is present outside the plating solution discharge pipe 5c. It is also blocked by the bottom surface 10z of the guide body 10w, so that the flow a of the plating solution L under the swirling flow is not disturbed. As a result, the swirling motion of the ball group on the bottom surface 1p is stabilized, so that a Cu core ball having a uniform plating layer can be formed. Further, the guide plate 8w may be incorporated in the gap 10y between the guide body 10w and the peripheral wall surface 1q.

Further, the anode portion described with reference to Fig. 4 (b) can be incorporated in a plating apparatus having the above-described guide body. In other words, as shown in the plating apparatus 21 of Fig. 8(b), the guide body 21w composed of a mesh-shaped non-conductive material also serves as a conductive particle storage container of the anode portion, and accommodates a plurality of anodes constituting the anode therein. The conductive particles 21o have a small opening in which the plurality of conductive particles 21o cannot pass and the plating solution can slightly flow. Further, the opening provided in the guide body 21w is smaller than the size of the conductive particles 21o, and the resistance during the flow of the plating solution is large, so that the upward flow of the plating solution will pass through the guide body 21w while maintaining the flow rate. Without disturbing the swirling flow of the plating solution.

[Third embodiment]

Hereinafter, a plating apparatus according to a third embodiment and a modification thereof will be described with reference to FIGS. 9(a), 9(b), and 9(c). The plating apparatus of the third embodiment is different from the plating apparatus 1 of the first embodiment in that a plating chamber 1m formed in the same manner as the first embodiment has a rectifying mechanism. Hereinafter, various aspects of the rectifying mechanism will be described.

The rectifying mechanism 17v of Fig. 9(a) is a plate-like member 17w made of a non-conductive material, which is supplied from the plating solution supply port 1f and swirls and flows down along the peripheral wall surface 1q of the plating chamber 1m. The flow of the plating solution L is rectified in a fixed direction. A spiral plate-like member 17w extending in the direction of the flow line of the plating solution L swirling down along the peripheral wall surface 1q of the plating chamber 1m is formed, and the upper portion 17x is disposed below the plating solution supply port 1f, and the lower portion 17y is disposed so as to be spaced apart from the bottom surface 1p of the plating chamber 1m by a predetermined gap and the outer peripheral surface is in close contact with the peripheral wall surface 1q. According to the plate-like member 17w, the plating liquid L supplied from the plating solution supply port 1f so as to swirl around the peripheral wall surface 1p of the plating chamber 1m is rectified by the plate-like member 17w. It is stably maintained and reaches the bottom surface 1p, and the ball group contacting the bottom surface 1p of the plating chamber 1m is pressed against the bottom surface 1p and is rotated. In order to function as the rectifying member 17w that rectifies the swirling reflow of the plating liquid L along the peripheral wall surface 1q, the rectifying member 17w is disposed so that the flow of the plating liquid L under the swirling flow is not hindered by the rectifying member 17w. That is, it is desirable that the rectifying member 17w and the plating solution discharge pipe 5c are arranged to have a sufficient gap formed therebetween in the radial direction as shown in the drawing.

Further, as shown in FIG. 9(b), which is a modification of the rectifying mechanism 17v, a plurality of fin-shaped plate-like members 18q, 18r, and 18s and the above-described plate-like member may be interposed between the gap portions 18t. Similarly to 17w, the 17w is spirally arranged in a line along the flow line of the swirling flow of the plating solution L to constitute the rectifying mechanism 18v. Further, as shown in FIG. 9(c), the rectifying mechanism 19v may be configured such that the plurality of plate-like members 19q to 19r are spirally arranged in a line along the flow line of the swirling flow of the plating solution L, and Below the plate-like members 19q to 19r, the plate-like members 19s to 19t are arranged in a zigzag shape so as to fill the gap portions 19u between the plate-like members 19q to 19r, thereby having two rows of plate-like members.

[Fourth embodiment]

Hereinafter, a plating apparatus according to a fourth embodiment and a modification thereof will be described with reference to FIGS. 10(a) and 10(b) to 12. The plating apparatus of the fourth aspect is different from the plating apparatus of the first aspect in that it has a supply mechanism that supplies a ball group to the plating chamber and a recovery mechanism that collects the ball group. Hereinafter, the plating apparatus of the fourth aspect will be described centering on the supply mechanism and the recovery mechanism. Further, the supply mechanism and the recovery mechanism may each be separately loaded into the plating apparatus.

First, the supply mechanism will be described. 10(a) is a front cross-sectional view and a plan view showing a state in which the sealing lid 1L is removed from the container 1k of FIG. 10(a), that is, FIG. 10(b), the supply mechanism 11q of the present embodiment has a storage supply. The accommodating portion 11r of the plurality of core balls 92 to the plating chamber 1m and the plating liquid inlet pipe 11u and the ball supply pipe 11v whose one end is connected to the accommodating portion 11r and the other end thereof is connected to the plating tank 1j. Further, in Fig. 10(a), above the AA line is a B arrow diagram on the upper side of the center line E of the plating tank 11 shown in Fig. 10(b), and below the AA line is the lower side of the observation center line E. C arrow diagram.

The accommodating portion 11r is composed of a container 11s that can accommodate the plurality of core balls 92 and a lid 11t that closes the upper portion of the closing container 11s, and the core ball 92 is supplied to the container 11s by the opening and closing cover 11t. One end of the plating solution inflow pipe 11u is connected to the side wall of the accommodating portion 11r via a valve 11w, and the other end of the plating solution inflow pipe 11u is opened (plating solution inlet) 11y to the plating chamber 1m. The opening is connected to the plating tank 1j. Here, the plating solution inflow pipe 11u is disposed such that its axial center is located substantially on the same line as the plating solution supply pipe 1e, that is, in the upper portion of the plating tank 1j and along the tangential direction of the peripheral wall surface 1q of the plating chamber 1m. The plating solution inflow port 11y welcomes the flow a of the swirling plating solution. Therefore, in the plan view, the plating solution inlet port 11y and the plating solution supply port 1f are opposed to each other via the center line F of the plating chamber 1m. Therefore, the plating solution supply port 1f is formed from the plating solution supply port 1f as indicated by a broken line a. The plating solution supplied so as to swirl along the peripheral wall surface 1q flows into the plating solution inflow pipe 11u through the plating solution inflow port 11y.

One end of the ball supply tube 11v is connected to the bottom of the accommodating portion 11r, and the other end of the ball supply tube 11v is connected to the plating tank 1j so that the opening (ball supply port) 11z opens to the bottom of the plating chamber 1m. Here, as shown in Fig. 10 (b), the ball supply tube 11v is disposed such that its axial edge is opposite to the plating solution inflow pipe 11u at the center line E of the plating chamber 1m when viewed in plan. In the tangential direction of the plating chamber 1 m, the ball supply port 11z is along the flow a of the swirling plating solution. Thereby, the core ball 92 can be supplied by the flow a of the plating liquid supplied from the plating solution supply port 1f and flowing down along the peripheral wall surface 1q and swirling on the bottom surface 1p. In the figure, reference numeral 11x is a space valve for holding the core ball 92 to be supplied in the accommodating portion 11r. The spacer valve 11x is preferably configured to automatically supply the core ball 92 to the plating chamber 1m, and the spacer valve 11x is not necessarily required when the core ball is manually supplied.

Next, the recovery mechanism 11a including the ball group 9 of the core ball 91 after the plating treatment will be described. The cathode 11n of the present embodiment is slidably fitted to the inner surface of the cylindrical portion 11L formed in the lower portion of the container 1k as a part of the components of the recovery mechanism 11a, and is provided on the outer peripheral surface of the disk having a disk shape. An O-ring (not shown) that prevents the plating solution from leaking out. Further, on the inner surface of the cylindrical portion 11L, an opening (ball recovery port) 11c for the one end of the ball recovery tube 11b including the ball group in which the core ball of the plating layer is formed is opened, and the ball recovery tube 11b is further provided. One end is connected to the recovery container 11e. Further, as shown in Fig. 10 (b), the ball collecting tube 11b is disposed so as to be axially edged at a position opposite to the ball supply tube 11v across the center line F of the plating chamber 1m in plan view. In the tangential direction of the plating chamber 1 m, the ball recovery port 11c welcomes the flow a of the swirling plating solution.

Here, the cathode 11n is moved in the cylindrical portion 11L in the vertical direction indicated by the symbol h by the vertical drive unit 11d such as an air cylinder, and the upper surface 11p is also at the position of the rising end. The bottom surface of the plating chamber 1m is in contact with the lower end edge of the peripheral wall surface 1q of the plating chamber 1m, and the ball recovery port 11c is closed by the outer peripheral surface thereof, and the ball recovery port 11c is opened at the lower end position. Further, in the plating apparatus 11 of the present embodiment, the cathode 11n is generally used as a valve, and the ball recovery port 11c is opened and closed by moving the cathode 11n up and down. However, the recovery mechanism may be provided as in the plating apparatus 1 of the first aspect. The cathode is fixed to the bottom of the plating chamber, and the ball recovery tube is connected to the plating tank via a valve, and the ball recovery port is directly opened to the plating chamber, thereby recovering the core ball by opening and closing the valve. At this time, it is preferable to arrange the ball recovery port above the bottom surface of the plating chamber so as not to hinder the movement of the core ball which is swirled on the bottom surface of the plating chamber.

The operation of the plating apparatus 11 including the supply mechanism 11q and the recovery mechanism 11a will be described with reference to Figs. 11(a), 11(b), and 11(c). The lid 11t of the accommodating portion 11r shown in Fig. 11(a) is opened, a predetermined number of core balls 92 are supplied to the container 11s, and then the lid 11t is closed. At this time, the valve 11w and the interval valve 11x are in a closed state. Further, the cathode 11n which is raised by the vertical driving portion 11d is at the rising end position, and the ball recovery port 11c is in the closed state.

Then, the plating apparatus 11 is actuated to supply the plating solution L from the plating solution supply port 1f. When the plating chamber 1m is filled with the plating solution L after a fixed period of time, as shown in Fig. 11 (a), the plating solution L is swirled along the peripheral wall surface 1q of the plating chamber 1m, and is oriented along the inclination of the peripheral wall surface 1q. The bottom surface 11p has a stable swirling flow a flowing downward in a spiral shape.

After the plating solution L is supplied and the flow state of the plating solution L in the plating chamber 1m is stabilized for a fixed period of time, the plating apparatus 11 opens the valve 11w to partially swirl the plating liquid L as shown by the arrow e in Fig. 11(b). The plating solution inflow pipe 11u flows into the accommodating portion 11r through the plating liquid inflow port 11y, and opens the interval valve 11x. Then, the core ball 92 accommodated in the accommodating portion 11r is extruded from the accommodating portion 11r by the plating solution L that has flowed in, flows through the tube of the ball supply tube 11v together with the plating solution L, and is self-balling as the arrow f The supply port 11z is discharged and supplied to the plating chamber 1m. The plating apparatus 11 closes the valve 11w and the interval valve 11x after all the core balls 92 are supplied to the plating chamber 1m. Here, since the ball supply tube 11v is disposed as described above, the core ball 92 supplied from the ball supply port 11z is multiplied by the swirling flow a of the plating solution L, and then smoothly swirled on the bottom surface 11p of the plating chamber 1m. Exercise and get electroplated. In this manner, after the plating solution L is supplied to the plating chamber 1m for a fixed period of time, and the swirling flow of the plating solution in the plating chamber is stabilized, the core ball 92 is supplied to the plating chamber 1m, so that the core ball 91 flows out from the plating chamber 1m. The case is small, and the core ball 91 can be plated with a high yield.

When the core ball 92 is manually supplied, the interval valve 11x is not provided in the path of the ball supply tube 11v, and after the flow state of the plating solution L is stabilized, the valve 11w is opened, and the plating liquid inflow pipe 11u and the storage portion 11r are used. After the plating liquid L flows through the path of the ball supply tube 11v, a predetermined number of core balls 92 may be supplied to the accommodating portion 11r.

Then, as shown in FIG. 11(c), when the plating apparatus 11 lowers the cathode 11n to the lower end by the vertical driving portion 11d and opens the ball recovery port 11c, the ball group including the core ball 91 on which the plating layer is formed is formed. 9 passes through the ball recovery port 11c and flows into the ball recovery pipe 11b as indicated by an arrow i, and is then recovered into the recovery container 11e. Further, when a valve is provided in the plating solution discharge pipe 5c and the valve is tightened together with the lowering of the cathode 11n, most of the plating solution L is discharged through the ball recovery pipe 11b, so that the ball group can be more smoothly recovered. 9.

The plating apparatus 12 shown in FIG. 12 is another example of the plating apparatus of the fourth aspect, and has a supply mechanism 12q provided on the path of the plating solution supply pipe 1e. In other words, one end of the plating solution inflow pipe 11u of the supply mechanism 12q is connected to the upstream side of the plating solution supply pipe 1e, and one end of the ball supply pipe 11v is connected to the downstream side of the plating solution supply pipe 1e, and the tubes are The other end is connected to the accommodating portion 11r via a valve 11w and a space valve 11x. According to the supply mechanism 12q, when the valve 11w and the space valve 11x are opened after the flow state of the plating solution L in the plating chamber 1m is stabilized, a part of the plating solution L flowing in the plating solution supply pipe 1e passes through the plating solution into the pipe 11u. The flow enters the storage unit 11r. Then, the core ball 92 accommodated in the accommodating portion 11r is extruded by the inflowing plating solution L, flows into the plating solution supply pipe 1e through the ball supply tube 11v, and is supplied from the plating solution supply port 1f together with the plating solution L. The plating chamber is 1m. Further, in order to smoothly flow the plating solution in the supply mechanism 12q, it is preferable to thicken the inner diameter of the plating solution into the upstream side of the plating solution supply pipe 1e to which the tube 11u is connected, and to supply the ball supply tube 11v. The inner diameter of the downstream side of the connection is thinner than the upstream side. Further, in order to prevent the core ball 92 from remaining in the supply mechanism 12q and flowing into the plating solution supply pipe 1e, it is preferable that the bottom surface of the accommodating portion 11r does not exist between the plating liquid inflow pipe 11u and the bottom surface of the ball supply pipe 11v. The difference is the segment.

[Fifth Embodiment]

Hereinafter, a plating apparatus according to a fifth aspect will be described with reference to FIGS. 13(a), 13(b), 13(c), and 13(d). Fig. 13 (a) is a front cross-sectional view showing a schematic configuration of a plating apparatus as an example of a fifth embodiment, wherein Fig. 13 (b) is a D arrow diagram of Fig. 13 (a), and Fig. 13 (c) is a A front cross-sectional view showing a schematic configuration of another example of the plating apparatus of the fifth embodiment, and (d) of FIG. 13 is an E-arrow diagram of FIG. 13(c).

In the plating apparatus according to the first to fourth aspects, the plating apparatus having the plating chamber, the plating solution supply pipe, and the respective components of the plating liquid discharge pipe disposed along the axis of the plating chamber has been described. The plating apparatus of the fifth aspect is not limited to the preferred embodiment, and the plating chamber has a circular bottom surface as a bottom surface of the plating chamber in which the core ball can be contacted and wound, and the diameter is reduced toward the bottom surface. The plating liquid supply pipe is disposed horizontally on the substantially truncated conical shape of the periphery of the bottom surface, and the plating solution supply port is opened in a tangential direction of the plating chamber having a circular cross section.

As shown in Fig. 13 (b), the plating apparatus 13 of the fifth embodiment has a substantially elliptical bottom surface 13p as a bottom surface on which the core ball 91 can be wound, and a peripheral wall surface 13q which is erected on the periphery of the bottom surface 13p in the longitudinal direction. The plating chamber 13m is formed in the same cross section, that is, in a straight tubular shape. Further, the plating solution supply pipe 13e that supplies the plating solution L to the plating chamber 13m is connected to the plating tank 1j with its axial center facing downward in order to generate a flow of the plating solution L that swirls down along the peripheral wall surface 13q. In addition, it is preferable that the plating solution supply pipe 13e is connected to the plating tank 1j via a joint or the like which can freely set the attachment angle to the peripheral wall surface 13q, because the core ball to be subjected to the plating treatment can be thus obtained. The size and number of the plating etc. are appropriately set to the angle under which the plating liquid L swirls. In order to smoothly discharge the upward flow b of the plating solution L from the plating chamber 13m, the plating solution discharge pipe 1c for discharging the plating solution L from the plating chamber 13m is preferably provided in the sealing cover in the same manner as the plating device 1 of the first embodiment. In the central portion of the 1L, the arrangement of the plating solution discharge pipe is not limited thereto, and may be provided on the outer periphery of the sealing lid 1L to overflow the plating chamber 13m as in the plating liquid discharge pipe 13c shown by a broken line (overflow) The plating solution L is discharged.

The operation of the plating apparatus 13 described above will be described. The ball group 9 is placed on the bottom surface 13p of the plating chamber 13m, and then the sealing lid 1L is closed to make the plating chamber 13m a sealed space, and the plating apparatus 13 is actuated. The plating apparatus 13 supplies the plating solution L to the plating chamber 13m through the plating solution supply pipe 13e. When the plating chamber 13m is filled with the plating solution L, the plating solution L supplied from the plating solution supply pipe 13e arranged as described above becomes the swirling flow a which spirally flows down along the peripheral wall surface 13q of the plating chamber 13m. The plating solution L which swirls down and reaches the bottom surface 13p presses the ball group 9 contacting the bottom surface 13p to the bottom surface 13p and performs a swirling motion to form a plating layer on the surface of the core ball 91. Similarly to the plating apparatus 1 of the first embodiment, the core ball 91 that is in contact with the bottom surface 13p of the plating chamber 13m and rotates on the bottom surface 13p is rotated, so that the core balls 91 are hard to adhere to each other, thereby preventing aggregation of the core ball 91, and The chance of the surface of the core ball 91 contacting the bottom surface 13p by rotation is made uniform, so that a plating layer having a uniform thickness can be formed. Since the plating solution L supplied to the plating chamber 13m is discharged from the plating solution discharge pipe 1c, fresh plating solution L is always supplied to the plating chamber 13m, so that a plating layer having a uniform thickness can be formed.

The plating apparatus 20 of another example of the fifth aspect shown in FIGS. 13(c) and 13(d) has a plating chamber 20m, and a plating chamber 20m is formed in the same manner in the longitudinal direction in the cross section of the plating chamber 20m. The bottom surface 20p having an annular shape of 20 m serves as a bottom surface that can be wound by the core ball 91, an outer peripheral wall surface 20q that stands up along the outer peripheral edge of the bottom surface 20p, and an inner peripheral wall surface 20x that is erected along the inner peripheral edge. In the plating apparatus 20, a plating layer is formed on the core ball 91 substantially in the same manner as the plating apparatus 13, but the cathode 20n constituting the bottom surface 20p itself is formed in an annular shape, so that it can be used as shown in FIG. (b) The cathode structure described in Fig. 2(c) similarly improves the effect of plating efficiency.

[Sixth embodiment]

Hereinafter, a plating apparatus according to a sixth aspect and a modification thereof will be described with reference to FIGS. 15(a), 15(b) to 16(a), and 16(b). As shown in Fig. 15 (a), Fig. 15 (b) to Fig. 16 (a), and Fig. 16 (b), in the plating apparatuses 23 to 26 of the sixth embodiment, reference is made to Fig. 2 (b) and Fig. 2 (c). The cathode 2n having the second cathode 2x described above is disposed at the bottom of the vessel 1k. The difference from the plating apparatus of the first aspect is that the anodes 23o to 26o are constant for the inner peripheral surface 2z of the second cathode 2x (the contact surface contacted by the core ball 91) which is flush with the peripheral wall surface 1q. The gap c is arranged on the outer peripheral surface (surface) 23v to 26v. Hereinafter, the structures of the anodes 23o to 26o will be described in the order of the plating apparatuses 23 to 26.

As shown in the plating apparatus 23 of Fig. 15 (a), the anode 23o formed mainly of tin has a size in which the plating core discharge port 1d is inserted from the bottom surface 1p of the container 1k in a posture in which the core is erected. Slightly cylindrical shape. The diameter of the anode 23o is so small that it does not hinder the plating solution from the plating solution discharge pipe 1c, and is sufficiently smaller than the diameter of the plating solution discharge port 1d. The symbol 23t in the figure is a position in which the anode 23o is positioned in the up and down direction, and is simultaneously supplied to the feeding electrode of the anode 23o. The power supply electrode 23t formed of titanium having a slightly columnar shape of a slightly flat upper surface 23x is fitted into the center of the attachment member 23s disposed at the central portion of the bottom surface of the container 1k, and is connected to the positive electrode of a DC power supply circuit (not shown). . The mounting member 23s in which the power supply electrode 23t is embedded is composed of a non-conductive material such as a resin insulated from the cathode 2n and the feeding electrode 23t connected to the negative electrode, and the upper surface of the first cathode 2y is formed thereon. The manner of being located on the same plane is fixed to the bottom surface of the container 1k. Here, the anode 23o is in a state in which the axis core is erected, and the bottom surface 23w is disposed in a state of being connected to the upper surface 23x of the power supply electrode 23t disposed only at a distance d higher than the bottom surface 1p of the container 1k. According to such an arrangement, the anode 23o in the vertical direction can be positioned, and the outer peripheral surface 23v of the lower portion of the anode 23o is in a state of being close to and facing the inner peripheral surface 2z of the second cathode 2x. Further, although the anode 23o does not need to be disposed only at a distance d higher than the bottom surface 1p of the container 1k, it is preferable to suppress excessive current flow when the first cathode 2y and the anode 23o are close to each other. In this way, the quality of the plating layer formed on each ball can be made uniform.

The symbol 23r in Fig. 15(a) is a holding member, and the anode 23o is positioned in the center of the plating chamber 1m in the horizontal plane, and has a plurality of openings, so that the core ball 91 is not allowed to pass but the plating liquid can be circulated. The holding member 23r as the permeation film is formed of a non-conductive material such as a resin and does not allow the core ball 91 to pass through the mesh. The size of the substantially cylindrical holding member 23r having the through hole through which the anode 23o can be inserted in the axial direction is such that the plating liquid discharge port 1d can be inserted from the direction of the bottom surface 1p of the container 1k in a posture in which the axis core is erected. Further, the diameter does not hinder the discharge of the plating solution from the plating solution discharge pipe 1c and is sufficiently smaller than the diameter of the plating solution discharge port 1d. Further, the holding member 23r is disposed such that its axial center substantially coincides with the axial center of the plating chamber 1m in the horizontal plane, and the upper portion thereof is inserted into the plating solution discharge port 1d, and is disposed at the plating solution discharge port 1d. The internal support member 23u is supported. The bottom of the holding member 23r is fitted into the annular groove formed so as to surround the power supply electrode 23t on the upper surface of the mounting member 23s, and the flow of the plating liquid that is rotated on the bottom surface 23p is immobile. Fixed. The anode 23o is inserted into the through hole of the holding member 23u thus arranged in the axial direction, whereby the position of the horizontal plane of the anode 23o is fixed. As a result, the position of the vertical direction is set by the above-described power supply electrode 23t, and a predetermined gap c is formed along the entire circumference between the outer peripheral surface 23v of the anode 23o and the inner peripheral surface 2z of the first cathode 2x. The density of the current between the two faces is uniform. In addition, the holding member 23r of the present embodiment is fixed to the upper and lower sides by the support member 23u and the attachment member 23s provided by the plating solution discharge port 1d from the viewpoint of the fixing strength of the liquid streams a and b of the plating solution. When the bottom of the holding member 23r is fixed only to make the strength sufficient, the support member 23u may be omitted, and the bottom of the holding member 23r may be fixed only by the attachment member 23s.

Here, the holding member 23r has a function of allowing the core ball 91 to pass but allowing the plating solution to flow, and the core ball 91 which is rotated by the plating solution on the bottom surface 1p can prevent it from coming into contact with the anode even if it is close to the anode 23o. 23o. However, only the peripheral portion of the bottom surface 6p or 7p as illustrated in Figs. 6(a) to 6(b) is used to define the reciprocating motion of the ball group 9, if the core ball 91 is in contact with the revolving motion. When the possibility of the anode is low, the holding member 23r is not necessary. In this case, the bottom of the anode 23o for positioning the anode 23o in the horizontal plane may be fixed to the container 1k.

Further, as shown in the plating apparatus 24 of Fig. 15 (b), the outer peripheral surface 24v of the anode 24o is desirably formed into a conical shape having a reduced diameter to the lower side at the same angle as the inner peripheral surface 2z of the second cathode 2x. In this way, the gap c between the both faces is constant in the up and down direction, so the current density is uniform throughout the entire surface.

The operation of the plating apparatus 23 of the sixth embodiment having the anode structure having the above-described configuration is basically the same as that of the above-described first to fifth embodiments, and thus will not be described. According to the plating apparatus 23, the flow a and b of the plating solution L are not hindered, and the electric resistance between the anode 23o and the cathode 2n can be lowered, and the liquid temperature of the plating solution L can be suppressed from rising or deteriorating, so that it can be formed. A good quality plating layer having few defects such as voids. That is to say, in order to lower the electric resistance between the anode and the cathode, it is necessary to face the respective roles of the anode and the cathode while arranging the two acting surfaces as close as possible. Here, in the case of the plating apparatus 1 described with reference to Fig. 1, when the anode 1o and the cathode 1n are brought close to each other, and the cathode 1n disposed at the bottom of the container 1k is disposed below the anode 1o, the plating chamber is placed. The flow a of the plating solution under the 1 m circumferential wall surface 1q may be hindered by the anode 1o. In the case of the plating apparatus 5 described with reference to Fig. 5, the anode 5o disposed on the outer peripheral surface of the tip end of the plating solution discharge pipe 5c is close to the cathode 1n, and the plating liquid discharge port 5d is close to the bottom surface 1p. When the liquid discharge pipe 5c protrudes further downward, the core ball 91 which is rotated over the bottom surface 1p of the plating chamber 1m may flow upward from the plating chamber 1m with the plating liquid b toward the plating liquid discharge pipe 5c. It is discharged. These problems can be solved by optimizing the shape or arrangement position of the anodes 1o, 5o, and the cathode 1n, but still require other conditions such as the specification (size, quality) or throughput of the core ball to be processed. And for each individual optimization.

In the other hand, the plating apparatus according to the sixth embodiment of FIGS. 15(a) and 15(b) is disposed at the base end of the container 1k so as to form the inner peripheral surface 2z which is the same as the peripheral wall surface 1q of the container 1k. In the second cathode 2x of the portion, the anode 23o is disposed as described above, and the outer peripheral surface 23v of the anode 23o faces the inner peripheral surface 2z of the second cathode 2x, and a gap is formed between the both surfaces, so that the peripheral wall surface is not hindered. 1q is a liquid flow a of the plating solution L under reflux. Further, the anode 23o is disposed so as to be vertically aligned along the liquid flow b-axis of the plating solution L that rises toward the plating solution discharge pipe 1c, so that the plating liquid L in the plating chamber 1m is circulated without blocking the rising liquid flow b. The core ball 91 is rotated back and forth on the bottom surface 1p, and the plating treatment can be smoothly performed. In the plating apparatus of the sixth embodiment, since the anode 23o and the cathode 2n are brought into close contact with each other without hindering the flow of the plating solution, the electric resistance between the two can be lowered, so that a very good plating layer can be formed.

A modification of the plating apparatus 23 described above will be described with reference to FIGS. 16(a) and 16(b). The plating apparatus 25 of Fig. 16 (a) is different from the above-described plating apparatus 23 in that it has an anode 25o which is a columnar shape extending upward from the plating liquid discharge pipe 1c in a posture in which the tip end portion faces downward. The tip end portion has an outer peripheral surface 25v that faces the inner peripheral surface 2z of the second cathode 2x with a constant gap c. Further, the plating apparatus 25 further includes a supply device (not shown) that tracks the uniform consumption of the outer peripheral surface 25v of the anode 25o over time and transports the anode 25o downward (arrow e). The consumption is caused by the fact that the crucible constituting the anode 25o is sucked into the plating solution L as the plating treatment proceeds. In the outer peripheral surface 25v of the anode 25o, similarly to the outer peripheral surface 24v of the anode 24o described with reference to Fig. 15(b), the taper is reduced downward at the same angle as the inner peripheral surface 2z of the second cathode 2x. shape. The anode 25o is inserted into the through hole of the holding member 23r in the axial direction by the tip end portion having the outer peripheral surface 25v, and is positioned in the horizontal direction in this manner, and the outer peripheral surface 25v is uniformly consumed as time passes during the plating process. The amount is maintained such that the distance d between the tip end and the bottom surface 1p of the container 1k is maintained, and the state in which the two do not collide is controlled by the supply device to position the vertical direction. The plating apparatus 25 configured as described above is particularly suitable for a case where a large number of core balls 91 are processed, a thick plating layer is formed, a processing time is long, and the consumption of the anode 25o cannot be ignored.

The plating apparatus 26 of FIG. 16(b) is different from the above-described plating apparatus 23 in that a ring-shaped anode 26o disposed below the plating solution discharge pipe 1c, a holding member 26r formed to cover the surface of the anode 26o, The support member 26u of the holding member 26r that protrudes from the lower end surface of the plating solution discharge pipe 1c is supported. Here, the outer peripheral surface 26v of the anode 26o whose axial core is aligned with the axial core of the plating chamber 1m is a slightly conical shape which is reduced in diameter to the lower side at the same angle as the inner peripheral surface 2z of the second cathode 2x. The outer peripheral surface 26v is opposed to the inner peripheral surface 2z of the second cathode 2x, and is supported by the support member 26u positioned in the vertical direction in this manner. Thereby, similarly to the above-described anodes 23o to 25o, a constant gap c is formed between the outer peripheral surface 26v of the anode 26o and the inner peripheral surface 2z of the second cathode 2x. Further, since the anode 26o has a circular shape, the flow of the plating solution rising toward the plating solution discharge port 1d is not hindered. According to the anode 26o of the present embodiment, the degree of freedom in the anode arrangement is higher than that of the plating apparatuses 23 to 25 in which the anodes 23o to 25o are disposed in the plating solution discharge port 1d, and the anode 26o can be brought closer to the cathode 2n. A plating apparatus having a large-capacity plating chamber 1 m for processing a plurality of core balls 91.

[Examples]

In the plating apparatus 1 of the first embodiment, 500,000 core balls having a diameter of 50 μm are placed, and a thickness of 20 μm is used as a target value, and plating treatment is performed under predetermined conditions by the method described above to obtain Sn-Ag-formed. A Cu core ball of a Cu-based plating layer. 600 specimens were selected from 500,000 core balls and Cu core balls, and the measured diameter and roundness distributions are shown in Fig. 17 (a) and Fig. 17 (b). Further, an appearance photograph and a cross-sectional photograph of the Cu core ball at the time of plating using the plating apparatus 1 of the first embodiment and the plating apparatus using the plating apparatus of the prior art document 1 are shown in Fig. 18 (a). 18(b), 18(c), and 18(d).

As shown in Fig. 17 (a) and Fig. 17 (b), the average value of the diameter of the Cu core ball was approximately 90 μm with respect to the average value of the core ball diameter of 50.4 μm, and a plating layer having a target value of 20 μm was formed. Further, the Cu core ball has a roundness of 0.9965, and a Cu core ball having a roundness of more than 0.9960, which is a core particle of the substrate particle, is formed. In addition, the standard deviation of the diameter and roundness of the Cu core ball is 1.776 and 0.0018, respectively, which is lower than 2.108 and 0.0075 of the core ball, and a Cu core ball having a small variation in diameter and roundness can be obtained.

As shown in Fig. 18 (a) and Fig. 18 (b), the surface of the Cu core ball in which the plating layer is formed by the plating apparatus 1 of the first embodiment is very smooth and smoothed, and is uniformly formed on the surface of the core ball. There is an electroplated layer, and thus no void is generated inside the plating layer. On the other hand, as shown in Fig. 16 (c) and Fig. 16 (d), the Cu core ball in which the plating layer was formed by the plating apparatus of the prior art document 1 was confirmed to have voids on the surface of the plating layer. The unevenness of the cause is low in roundness and large in variation in diameter and roundness due to the unevenness.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

1, 5, 8, 10, 11, 12, 13, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26. . . Plating device

1a, 5a. . . Body part

1b. . . Plating solution circulation mechanism

1c, 5c, 13c. . . Electroplating solution discharge pipe

1d, 5d. . . Plating solution discharge

1e, 13e, 22e. . . Plating solution supply tube

1f, 22f. . . Plating solution supply port

1g, 11q, 12q. . . Supply agency

1h. . . DC power circuit

1i. . . Vibration mechanism

1j. . . Plating tank

1k. . . container

1L. . . Sealing cover

1m, 13m, 20m. . . Plating chamber

1n, 2n, 3n, 3m, 6n, 7n, 11n, 13n, 20n. . . cathode

1o, 5o, 10o, 14o, 15o, 23o, 24o, 25o, 26o. . . anode

1p, 2p, 3p, 6p, 7p, 10z, 13p, 20p. . . Bottom

1q, 13q. . . Wall surface

1r. . . Support component

1s. . . Magnetic generating mechanism

2x. . . Second cathode

2y. . . First cathode

2z. . . Central department

4y. . . Guide groove

7y. . . Protrusion

8v, 10v, 16v. . . Guiding mechanism

8w, 16w. . . Guide plate

8x, 17x. . . Upper

8y, 17y. . . Lower part

8z. . . Flow path

9. . . Ball group

10w, 21w. . . Guide body

10x. . . Peripheral surface

10y, 16z. . . gap

11a. . . Recycling agency

11b. . . Ball recovery tube

11c. . . Ball recovery port

11d. . . Upper and lower drive

11e. . . Recycling container

11L. . . Cylindrical part

11p. . . Upper surface

11q. . . Supply agency

11r. . . Storage department

11s. . . container

11t. . . cover

11u. . . Plating solution inflow tube

11v. . . Ball supply tube

11w‧‧‧ valve

11x‧‧‧ interval valve

11y‧‧‧ plating solution inlet

11z‧‧‧ ball supply port

15x‧‧‧Electrical particle storage container

15y, 21o‧‧‧ conductive particles

17v, 18v, 19v‧‧ ‧ rectification mechanism

17w, 18w, 19w, 18q, 18r, 18s, 19q, 19r, 19s, 19t‧‧‧ plate-like members

18t, 19u‧‧‧ gap

20q‧‧‧outer wall

20x‧‧‧ inner wall

91, 91a, 91b, 92‧‧ ‧ core ball

a, b‧‧‧ flow

d, e, f‧‧‧ arrows

F‧‧‧ center line

g‧‧‧Fixed size

L‧‧‧ plating solution

M1‧‧‧ plating layer

FIG. 1 is a view showing a schematic configuration of a plating apparatus according to a first embodiment of the present invention.

2(a), 2(b), and 2(c) are plan views of the plating apparatus of Fig. 1 and a plating apparatus of a preferred embodiment.

3(a), 3(b), and 3(c) are partially enlarged views of a plating apparatus according to another preferred embodiment of the plating apparatus of Fig. 1.

4(a), 4(b), and 4(c) are partially enlarged views of a plating apparatus according to another preferred embodiment of the plating apparatus of Fig. 1.

Fig. 5 is a front elevational view showing a plating apparatus of another preferred embodiment of the plating apparatus of Fig. 1.

6(a) and 6(b) are enlarged front views of a plating apparatus according to another preferred embodiment of the plating apparatus of Fig. 1.

7(a) and 7(b) are perspective views of a plating apparatus according to a second embodiment of the present invention.

(a) and (b) of FIG. 8 are views showing a schematic configuration of another example of the plating apparatus of the second embodiment.

9(a), 9(b), and 9(c) are perspective views of a plating apparatus according to a third embodiment of the present invention.

10(a) and 10(b) are perspective views of a plating apparatus according to a fourth embodiment of the present invention.

11(a), 11(b), and 11(c) are views for explaining the operation of the plating apparatus of Figs. 10(a) and 10(b).

FIG. 12 is a view showing a schematic configuration of another example of the plating apparatus of the fourth embodiment.

(a), (b), (c), and (d) of FIG. 13 are views showing a schematic configuration of a plating apparatus according to a fifth embodiment of the present invention.

14(a) and 14(b) are diagrams for explaining behavior in plating of a core ball.

(a) and (b) of FIG. 15 are views showing a schematic configuration of a plating apparatus according to a sixth embodiment of the present invention.

(a) and (b) of FIG. 16 are views showing a schematic configuration of another example of the plating apparatus according to the sixth embodiment of the present invention.

17(a) and 17(b) are views for explaining an example of the plating apparatus of Fig. 1.

18(a), 18(b), 18(c), and 18(d) are other views for explaining an example of the plating apparatus of Fig. 1.

1. . . Plating device

1a. . . Body part

1b. . . Plating solution circulation mechanism

1c. . . Electroplating solution discharge pipe

1d. . . Plating solution discharge

1e. . . Plating solution supply tube

1f. . . Plating solution supply port

1g. . . Supply agency

1h. . . DC power circuit

1i. . . Vibration mechanism

1j. . . Plating tank

1k. . . container

1L. . . Sealing cover

1m. . . Plating chamber

1n. . . cathode

1o. . . anode

1p. . . Bottom

1q. . . Wall surface

1r. . . Support component

1s. . . Magnetic generating mechanism

9. . . Ball group

91. . . Core ball

a, b. . . flow

L. . . Plating solution

Claims (22)

An electroplating apparatus is an electroplating apparatus having substrate particles having conductivity on a surface, comprising: a plating tank having a plating chamber having a bottom surface on which the substrate particles can be contacted and circulated, and a periphery along the bottom surface And a standing wall surface, and a particle group including the substrate particles and a plating solution; the plating solution supply pipe having a supply port opened upward from a bottom surface of the plating chamber and having a peripheral wall surface along the plating chamber And the method of swirling supplies the plating solution from the supply port; the plating solution discharge pipe has a discharge port that is open to the plating chamber coaxially with the axis of the plating chamber; and a cathode and the base disposed on the bottom surface of the plating chamber The material particles are in contact; the anode is disposed at a position immersed in the plating solution contained in the plating chamber; and a power source is connected to the cathode and the anode. The plating apparatus according to claim 1, wherein a bottom surface of the plating chamber has a circular shape, and a peripheral wall surface of the plating chamber has a conical shape which is reduced in diameter toward a bottom surface of the plating chamber, and the plating liquid discharge pipe is It is disposed coaxially with the axis of the plating chamber. The plating apparatus according to claim 2, wherein the discharge port is disposed below the supply port. The electroplating apparatus according to claim 2, wherein the electroplating liquid discharge pipe is disposed to be along a core of the plating chamber Move in the direction. The plating apparatus according to claim 2, wherein the cathode is disposed in a substantially annular shape at a peripheral portion of a bottom surface of the plating chamber. The plating apparatus according to claim 2, wherein the cathode is disposed in a substantially annular shape at a base end portion of a peripheral wall surface of the plating chamber. The plating apparatus according to claim 6, wherein the anode has a surface provided in a cathode which is disposed in a substantially annular shape on a base end portion of a peripheral wall surface of the plating chamber, and the substrate The contact surface where the particles are in contact has a certain gap. The plating apparatus according to claim 2, wherein the bottom surface of the plating chamber is formed such that a central portion thereof is higher with respect to the peripheral portion in a radial direction thereof. The plating apparatus according to claim 1, wherein the anode is composed of a plurality of conductive particles connected to the power source. The plating apparatus according to any one of the items 1 to 9, wherein the plating chamber has a guiding mechanism that directs a plating liquid supplied from a supply port of the plating solution supply pipe Guided by the bottom surface of the plating chamber. The electroplating apparatus according to claim 10, wherein the guiding mechanism is a guiding plate disposed in a spiral shape. The electroplating apparatus according to claim 10, wherein The guide means is a guide body having an outer peripheral surface formed along a peripheral wall surface of the plating chamber, and has a predetermined gap between the peripheral wall surface and the outer peripheral surface. The plating apparatus according to any one of the items 1 to 9, wherein the plating chamber has a rectifying mechanism that rectifies a plating solution supplied from a supply port of the plating solution supply pipe. The plating apparatus according to claim 13, wherein the rectifying means is a plate-like member provided on a peripheral wall surface of the plating chamber. The electroplating apparatus according to any one of claims 1 to 9, wherein the electroplating apparatus is provided to suction the plating solution from the discharge port of the electroplating liquid discharge pipe. The plating apparatus according to any one of the items 1 to 9, wherein the plating apparatus is configured such that a flow rate or a flow rate of the plating solution supplied from the plating solution supply tube changes with time. The plating apparatus according to any one of the items 1 to 9, wherein a guide groove is formed on a bottom surface of the plating chamber, and the guide groove is supplied along a plating solution supplied from the plating solution supply tube. The direction of the whirling is formed to guide the above-mentioned particle group. As described in any one of claims 1 to 9 The plating apparatus includes a vibration mechanism connected to the plating tank. The plating apparatus according to any one of claims 1 to 9, comprising a magnetic force generating mechanism disposed at a lower portion or a lower side portion of the plating chamber, and configured to be magnetically generated by the magnetic force generating mechanism The substrate particles having soft magnetic properties are pulled toward the bottom surface of the plating chamber. The plating apparatus according to any one of claims 1 to 9, comprising a supply mechanism that is indirectly connected to the plating chamber directly or via the plating liquid supply tube to perform the plating The chamber supplies the above-mentioned particle group. The plating apparatus according to claim 20, wherein the supply mechanism includes a accommodating portion that accommodates the particle group, and a substrate particle supply tube that has one end connected to the accommodating portion and the other end connected to the periphery of the plating chamber And a plating liquid inflow pipe having one end connected to the storage portion and the other end connected to a peripheral wall surface of the plating chamber and being higher than the other end of the substrate particle supply pipe. The electroplating apparatus according to any one of claims 1 to 9, further comprising a recovery mechanism that recovers the particle group accommodated in the plating chamber.