JP4351374B2 - 基板処理システム、サセプタ支持装置、基板支持システム及びサセプタ支持フレーム - Google Patents

基板処理システム、サセプタ支持装置、基板支持システム及びサセプタ支持フレーム Download PDF

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Publication number
JP4351374B2
JP4351374B2 JP2000287265A JP2000287265A JP4351374B2 JP 4351374 B2 JP4351374 B2 JP 4351374B2 JP 2000287265 A JP2000287265 A JP 2000287265A JP 2000287265 A JP2000287265 A JP 2000287265A JP 4351374 B2 JP4351374 B2 JP 4351374B2
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Japan
Prior art keywords
susceptor
support
members
transverse
longitudinal
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Expired - Lifetime
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JP2000287265A
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Japanese (ja)
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JP2001168178A (ja
JP2001168178A5 (enExample
Inventor
エム． ホワイト ジョン
チャン ラリー
ビア エマニュエル
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エーケーティー株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000287265A 1999-09-21 2000-09-21 基板処理システム、サセプタ支持装置、基板支持システム及びサセプタ支持フレーム Expired - Lifetime JP4351374B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/399900 1999-09-21
US09/399,900 US6149365A (en) 1999-09-21 1999-09-21 Support frame for substrates

Publications (3)

Publication Number Publication Date
JP2001168178A JP2001168178A (ja) 2001-06-22
JP2001168178A5 JP2001168178A5 (enExample) 2005-11-04
JP4351374B2 true JP4351374B2 (ja) 2009-10-28

Family

ID=23581415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000287265A Expired - Lifetime JP4351374B2 (ja) 1999-09-21 2000-09-21 基板処理システム、サセプタ支持装置、基板支持システム及びサセプタ支持フレーム

Country Status (5)

Country Link
US (2) US6149365A (enExample)
EP (1) EP1089325A3 (enExample)
JP (1) JP4351374B2 (enExample)
KR (1) KR100445392B1 (enExample)
SG (1) SG86441A1 (enExample)

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KR100819369B1 (ko) * 2001-12-31 2008-04-04 엘지.필립스 엘시디 주식회사 노광용 척
US6899507B2 (en) * 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
KR20040012232A (ko) * 2002-08-01 2004-02-11 삼성전자주식회사 반도체 제조설비
KR100536797B1 (ko) * 2002-12-17 2005-12-14 동부아남반도체 주식회사 화학 기상 증착 장치
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
KR100484017B1 (ko) * 2003-11-11 2005-04-20 주식회사 에이디피엔지니어링 이중 버퍼 및 어라이너가 구비된 로드락 챔버
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US8365682B2 (en) * 2004-06-01 2013-02-05 Applied Materials, Inc. Methods and apparatus for supporting substrates
US20060054090A1 (en) * 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
WO2006056091A1 (en) * 2004-11-24 2006-06-01 Oc Oerlikon Balzers Ag Vacuum processing chamber for very large area substrates
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
JP2006191039A (ja) * 2005-01-05 2006-07-20 Samsung Sdi Co Ltd トレイ移送装置
KR101239694B1 (ko) * 2006-03-02 2013-03-06 주성엔지니어링(주) 가장자리의 처짐 현상을 개선한 기판안치대
JP4195045B2 (ja) * 2006-05-31 2008-12-10 三笠産業株式会社 ランマーの保護カバー構造
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20090109250A1 (en) * 2007-10-26 2009-04-30 Johnston Benjamin M Method and apparatus for supporting a substrate
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
JP5306908B2 (ja) * 2009-06-03 2013-10-02 東京エレクトロン株式会社 搬送モジュール
US10770338B2 (en) 2018-12-19 2020-09-08 Globalfoundries Inc. System comprising a single wafer, reduced volume process chamber

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US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4455467A (en) * 1981-09-21 1984-06-19 General Electric Company Metal rack for microwave oven
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
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US5951770A (en) * 1997-06-04 1999-09-14 Applied Materials, Inc. Carousel wafer transfer system

Also Published As

Publication number Publication date
JP2001168178A (ja) 2001-06-22
SG86441A1 (en) 2002-02-19
EP1089325A2 (en) 2001-04-04
EP1089325A3 (en) 2005-08-17
US6149365A (en) 2000-11-21
US6371712B1 (en) 2002-04-16
KR100445392B1 (ko) 2004-08-25
KR20010050564A (ko) 2001-06-15

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