KR100445392B1 - 기판 지지 프레임 - Google Patents

기판 지지 프레임 Download PDF

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Publication number
KR100445392B1
KR100445392B1 KR10-2000-0055486A KR20000055486A KR100445392B1 KR 100445392 B1 KR100445392 B1 KR 100445392B1 KR 20000055486 A KR20000055486 A KR 20000055486A KR 100445392 B1 KR100445392 B1 KR 100445392B1
Authority
KR
South Korea
Prior art keywords
susceptor
support frame
substrate
support
processing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR10-2000-0055486A
Other languages
English (en)
Korean (ko)
Other versions
KR20010050564A (ko
Inventor
존 엠. 화이트
레리 창
엠마누엘 비어
Original Assignee
어플라이드 고마쯔 테크놀로지, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 고마쯔 테크놀로지, 인코포레이티드 filed Critical 어플라이드 고마쯔 테크놀로지, 인코포레이티드
Publication of KR20010050564A publication Critical patent/KR20010050564A/ko
Application granted granted Critical
Publication of KR100445392B1 publication Critical patent/KR100445392B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR10-2000-0055486A 1999-09-21 2000-09-21 기판 지지 프레임 Expired - Lifetime KR100445392B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9/399,900 1999-09-21
US09/399,900 1999-09-21
US09/399,900 US6149365A (en) 1999-09-21 1999-09-21 Support frame for substrates

Publications (2)

Publication Number Publication Date
KR20010050564A KR20010050564A (ko) 2001-06-15
KR100445392B1 true KR100445392B1 (ko) 2004-08-25

Family

ID=23581415

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0055486A Expired - Lifetime KR100445392B1 (ko) 1999-09-21 2000-09-21 기판 지지 프레임

Country Status (5)

Country Link
US (2) US6149365A (enExample)
EP (1) EP1089325A3 (enExample)
JP (1) JP4351374B2 (enExample)
KR (1) KR100445392B1 (enExample)
SG (1) SG86441A1 (enExample)

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KR100819369B1 (ko) * 2001-12-31 2008-04-04 엘지.필립스 엘시디 주식회사 노광용 척
US6899507B2 (en) * 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
KR20040012232A (ko) * 2002-08-01 2004-02-11 삼성전자주식회사 반도체 제조설비
KR100536797B1 (ko) * 2002-12-17 2005-12-14 동부아남반도체 주식회사 화학 기상 증착 장치
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
KR100484017B1 (ko) * 2003-11-11 2005-04-20 주식회사 에이디피엔지니어링 이중 버퍼 및 어라이너가 구비된 로드락 챔버
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US8365682B2 (en) * 2004-06-01 2013-02-05 Applied Materials, Inc. Methods and apparatus for supporting substrates
US20060054090A1 (en) * 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
DE602005005851T2 (de) * 2004-11-24 2009-04-09 Oc Oerlikon Balzers Ag Vakuumbehandlungskammer für sehr grossflächige substrate
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
JP2006191039A (ja) * 2005-01-05 2006-07-20 Samsung Sdi Co Ltd トレイ移送装置
KR101239694B1 (ko) * 2006-03-02 2013-03-06 주성엔지니어링(주) 가장자리의 처짐 현상을 개선한 기판안치대
JP4195045B2 (ja) * 2006-05-31 2008-12-10 三笠産業株式会社 ランマーの保護カバー構造
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20090109250A1 (en) * 2007-10-26 2009-04-30 Johnston Benjamin M Method and apparatus for supporting a substrate
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
JP5306908B2 (ja) * 2009-06-03 2013-10-02 東京エレクトロン株式会社 搬送モジュール
US10770338B2 (en) 2018-12-19 2020-09-08 Globalfoundries Inc. System comprising a single wafer, reduced volume process chamber

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US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4455467A (en) * 1981-09-21 1984-06-19 General Electric Company Metal rack for microwave oven
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
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US5951770A (en) * 1997-06-04 1999-09-14 Applied Materials, Inc. Carousel wafer transfer system

Also Published As

Publication number Publication date
US6371712B1 (en) 2002-04-16
SG86441A1 (en) 2002-02-19
EP1089325A2 (en) 2001-04-04
US6149365A (en) 2000-11-21
JP2001168178A (ja) 2001-06-22
JP4351374B2 (ja) 2009-10-28
KR20010050564A (ko) 2001-06-15
EP1089325A3 (en) 2005-08-17

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