JP4335659B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP4335659B2
JP4335659B2 JP2003422119A JP2003422119A JP4335659B2 JP 4335659 B2 JP4335659 B2 JP 4335659B2 JP 2003422119 A JP2003422119 A JP 2003422119A JP 2003422119 A JP2003422119 A JP 2003422119A JP 4335659 B2 JP4335659 B2 JP 4335659B2
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Japan
Prior art keywords
nonvolatile
memory device
semiconductor memory
information
nonvolatile semiconductor
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Expired - Fee Related
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JP2003422119A
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English (en)
Japanese (ja)
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JP2005182909A5 (enExample
JP2005182909A (ja
Inventor
哲也 石丸
孝徳 山添
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2003422119A priority Critical patent/JP4335659B2/ja
Priority to TW093133216A priority patent/TW200535847A/zh
Priority to US11/002,794 priority patent/US7286401B2/en
Priority to CNA200410098557XA priority patent/CN1629983A/zh
Priority to KR1020040103361A priority patent/KR20050062384A/ko
Publication of JP2005182909A publication Critical patent/JP2005182909A/ja
Publication of JP2005182909A5 publication Critical patent/JP2005182909A5/ja
Application granted granted Critical
Publication of JP4335659B2 publication Critical patent/JP4335659B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2003422119A 2003-12-19 2003-12-19 不揮発性半導体記憶装置 Expired - Fee Related JP4335659B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置
TW093133216A TW200535847A (en) 2003-12-19 2004-11-01 Nonvolatile semiconductor memory device
US11/002,794 US7286401B2 (en) 2003-12-19 2004-12-03 Nonvolatile semiconductor memory device
CNA200410098557XA CN1629983A (zh) 2003-12-19 2004-12-09 非易失性半导体存储器件
KR1020040103361A KR20050062384A (ko) 2003-12-19 2004-12-09 불휘발성 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005182909A JP2005182909A (ja) 2005-07-07
JP2005182909A5 JP2005182909A5 (enExample) 2007-02-01
JP4335659B2 true JP4335659B2 (ja) 2009-09-30

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Family Applications (1)

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JP2003422119A Expired - Fee Related JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置

Country Status (5)

Country Link
US (1) US7286401B2 (enExample)
JP (1) JP4335659B2 (enExample)
KR (1) KR20050062384A (enExample)
CN (1) CN1629983A (enExample)
TW (1) TW200535847A (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1717817B8 (en) * 2005-04-29 2016-05-18 Micron Technology, Inc. A semiconductor memory device with information loss self-detect capability
JP4696715B2 (ja) * 2005-06-21 2011-06-08 ソニー株式会社 記憶装置及び記憶装置の駆動方法
EP1814121A1 (en) * 2006-01-31 2007-08-01 STMicroelectronics S.r.l. Non-volatile EEPROM type memory architecture
US7324365B2 (en) * 2006-03-02 2008-01-29 Infineon Technologies Ag Phase change memory fabricated using self-aligned processing
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
KR100875292B1 (ko) 2006-09-19 2008-12-23 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
TWI320180B (en) * 2007-01-12 2010-02-01 A driving method and a driving system for writing the phase change memory
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR20090086816A (ko) 2008-02-11 2009-08-14 삼성전자주식회사 상변화 메모리 장치, 그것의 기록 방법, 그리고 그것을포함하는 시스템
US8767450B2 (en) 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
WO2009042298A1 (en) * 2007-09-26 2009-04-02 Rambus Inc. Flash memory refresh
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US7855916B2 (en) * 2007-10-24 2010-12-21 Rao G R Mohan Nonvolatile memory systems with embedded fast read and write memories
JP2009158633A (ja) * 2007-12-26 2009-07-16 Sanyo Electric Co Ltd 不揮発性半導体記憶装置およびその製造方法
US8189385B2 (en) * 2007-12-26 2012-05-29 Semiconductor Components Industries, Llc Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
KR101437123B1 (ko) * 2008-04-01 2014-09-02 삼성전자 주식회사 메모리 시스템 및 그것의 마모도 관리 방법
US8031521B1 (en) * 2008-05-20 2011-10-04 Marvell International Ltd. Reprogramming non-volatile memory devices for read disturbance mitigation
US7719876B2 (en) 2008-07-31 2010-05-18 Unity Semiconductor Corporation Preservation circuit and methods to maintain values representing data in one or more layers of memory
JP5422984B2 (ja) * 2008-12-08 2014-02-19 富士通株式会社 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法
US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
JP2011170941A (ja) * 2010-02-22 2011-09-01 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
JP2012069199A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体記憶装置
KR101756111B1 (ko) 2011-04-15 2017-07-10 삼성전자 주식회사 메모리 컨트롤러 구동방법, 메모리 컨트롤러, 메모리 장치 및 메모리 시스템
CN103137202B (zh) * 2011-11-24 2018-01-30 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
WO2014019156A1 (en) * 2012-08-01 2014-02-06 Datacard Corporation Variable erase for thermally rewritable cards
CN103049713B (zh) * 2012-12-20 2016-12-07 华为技术有限公司 对存储设备中数据进行巡检的方法、设备及系统
US9325321B2 (en) * 2013-03-13 2016-04-26 Microsemi SoC Corporation Background auto-refresh apparatus and method for non-volatile memory array
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US8971093B2 (en) 2013-05-14 2015-03-03 Kabushiki Kaisha Toshiba Memory device and method of controlling memory device
US9329802B2 (en) 2013-11-11 2016-05-03 Qualcomm Incorporated Fail safe refresh of data stored in NAND memory device
US9240235B2 (en) 2013-12-19 2016-01-19 Sandisk Technologies Inc. Mitigating disturb effects for non-volatile memory
US20150213898A1 (en) * 2014-01-27 2015-07-30 Silicon Storage Technololgy, Inc. Byte Erasable Non-volatile Memory Architecture And Method Of Erasing Same
CN104299556A (zh) * 2014-10-13 2015-01-21 深圳市华星光电技术有限公司 驱动电路及显示装置
WO2016067846A1 (ja) 2014-10-31 2016-05-06 ソニー株式会社 メモリコントローラ、記憶装置、情報処理システムおよびメモリの制御方法
JP6320322B2 (ja) * 2014-12-29 2018-05-09 東芝メモリ株式会社 キャッシュメモリ装置及びプログラム
JP6421042B2 (ja) * 2015-01-16 2018-11-07 ルネサスエレクトロニクス株式会社 情報処理装置
WO2016154144A1 (en) * 2015-03-21 2016-09-29 NEO Semiconductor, Inc. Sonos byte-erasable eeprom
CN106708650B (zh) * 2015-11-17 2022-02-08 恩智浦美国有限公司 保护嵌入式非易失性存储器免受干扰
KR102513505B1 (ko) * 2016-01-29 2023-03-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 그것을 포함하는 데이터 저장 장치의 동작 방법
JP6718248B2 (ja) * 2016-02-17 2020-07-08 ルネサスエレクトロニクス株式会社 半導体装置
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
US10269440B2 (en) * 2016-05-17 2019-04-23 Silicon Storage Technology, Inc. Flash memory array with individual memory cell read, program and erase
US10074438B2 (en) * 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
KR102589259B1 (ko) * 2016-06-20 2023-10-12 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102559530B1 (ko) 2016-09-19 2023-07-27 에스케이하이닉스 주식회사 저항성 메모리 장치, 이를 위한 디스터번스 방지 회로 및 방법
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10354737B2 (en) * 2017-06-22 2019-07-16 Western Digital Technologies, Inc. Non-volatile memory sub-block erasure disturb management scheme
JP6563988B2 (ja) * 2017-08-24 2019-08-21 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP7212239B2 (ja) * 2018-06-05 2023-01-25 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
CN110703993B (zh) * 2019-09-20 2023-07-04 上海新储集成电路有限公司 一种用于短时非易失性存储器的数据刷新方法
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
CN114093405A (zh) * 2021-10-25 2022-02-25 长江存储科技有限责任公司 存储器数据的擦除方法、存储装置及存储系统

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JP3155847B2 (ja) * 1993-01-13 2001-04-16 株式会社東芝 不揮発性半導体記憶装置およびこれを用いた記憶システム
US5969383A (en) * 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
JP3599541B2 (ja) * 1997-11-27 2004-12-08 シャープ株式会社 不揮発性半導体記憶装置
US6005810A (en) * 1998-08-10 1999-12-21 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations
JP4132323B2 (ja) * 1998-12-17 2008-08-13 富士通株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の内部動作方法
US6396744B1 (en) * 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
JP2004030738A (ja) * 2002-06-24 2004-01-29 Toshiba Corp ダイナミック型半導体メモリ装置
FR2851074B1 (fr) * 2003-02-10 2005-04-22 St Microelectronics Sa Memoire flash sectorisee comprenant des moyens de controle et de rafraichissement de cellules memoire

Also Published As

Publication number Publication date
KR20050062384A (ko) 2005-06-23
US20050135155A1 (en) 2005-06-23
US7286401B2 (en) 2007-10-23
CN1629983A (zh) 2005-06-22
JP2005182909A (ja) 2005-07-07
TW200535847A (en) 2005-11-01

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