KR20050062384A - 불휘발성 반도체 기억 장치 - Google Patents

불휘발성 반도체 기억 장치 Download PDF

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Publication number
KR20050062384A
KR20050062384A KR1020040103361A KR20040103361A KR20050062384A KR 20050062384 A KR20050062384 A KR 20050062384A KR 1020040103361 A KR1020040103361 A KR 1020040103361A KR 20040103361 A KR20040103361 A KR 20040103361A KR 20050062384 A KR20050062384 A KR 20050062384A
Authority
KR
South Korea
Prior art keywords
data
refresh
block
refresh block
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020040103361A
Other languages
English (en)
Korean (ko)
Inventor
데쯔야 이시마루
야마조에다까노리
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20050062384A publication Critical patent/KR20050062384A/ko
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020040103361A 2003-12-19 2004-12-09 불휘발성 반도체 기억 장치 Abandoned KR20050062384A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置
JPJP-P-2003-00422119 2003-12-19

Publications (1)

Publication Number Publication Date
KR20050062384A true KR20050062384A (ko) 2005-06-23

Family

ID=34675305

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040103361A Abandoned KR20050062384A (ko) 2003-12-19 2004-12-09 불휘발성 반도체 기억 장치

Country Status (5)

Country Link
US (1) US7286401B2 (enExample)
JP (1) JP4335659B2 (enExample)
KR (1) KR20050062384A (enExample)
CN (1) CN1629983A (enExample)
TW (1) TW200535847A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR100805857B1 (ko) * 2006-03-02 2008-02-21 키몬다 아게 자기-정렬된 처리를 이용하여 제조된 상 변화 메모리
KR101125390B1 (ko) * 2008-12-08 2012-03-27 후지쯔 가부시끼가이샤 비휘발성 메모리, 메모리 제어 장치, 메모리 제어 시스템, 및 비휘발성 메모리의 제어 방법
US8767450B2 (en) 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR20210079393A (ko) * 2019-12-05 2021-06-29 샌디스크 테크놀로지스 엘엘씨 메모리 셀들에 대한 온도 및 사이클링 의존적 리프레시 동작

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EP1717817B8 (en) * 2005-04-29 2016-05-18 Micron Technology, Inc. A semiconductor memory device with information loss self-detect capability
JP4696715B2 (ja) * 2005-06-21 2011-06-08 ソニー株式会社 記憶装置及び記憶装置の駆動方法
EP1814121A1 (en) * 2006-01-31 2007-08-01 STMicroelectronics S.r.l. Non-volatile EEPROM type memory architecture
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
KR100875292B1 (ko) 2006-09-19 2008-12-23 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
TWI320180B (en) * 2007-01-12 2010-02-01 A driving method and a driving system for writing the phase change memory
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR20090086816A (ko) 2008-02-11 2009-08-14 삼성전자주식회사 상변화 메모리 장치, 그것의 기록 방법, 그리고 그것을포함하는 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
WO2009042298A1 (en) * 2007-09-26 2009-04-02 Rambus Inc. Flash memory refresh
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US7855916B2 (en) * 2007-10-24 2010-12-21 Rao G R Mohan Nonvolatile memory systems with embedded fast read and write memories
JP2009158633A (ja) * 2007-12-26 2009-07-16 Sanyo Electric Co Ltd 不揮発性半導体記憶装置およびその製造方法
US8189385B2 (en) * 2007-12-26 2012-05-29 Semiconductor Components Industries, Llc Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
KR101437123B1 (ko) * 2008-04-01 2014-09-02 삼성전자 주식회사 메모리 시스템 및 그것의 마모도 관리 방법
US8031521B1 (en) * 2008-05-20 2011-10-04 Marvell International Ltd. Reprogramming non-volatile memory devices for read disturbance mitigation
US7719876B2 (en) 2008-07-31 2010-05-18 Unity Semiconductor Corporation Preservation circuit and methods to maintain values representing data in one or more layers of memory
US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
JP2011170941A (ja) * 2010-02-22 2011-09-01 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
JP2012069199A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体記憶装置
KR101756111B1 (ko) 2011-04-15 2017-07-10 삼성전자 주식회사 메모리 컨트롤러 구동방법, 메모리 컨트롤러, 메모리 장치 및 메모리 시스템
CN103137202B (zh) * 2011-11-24 2018-01-30 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
WO2014019156A1 (en) * 2012-08-01 2014-02-06 Datacard Corporation Variable erase for thermally rewritable cards
CN103049713B (zh) * 2012-12-20 2016-12-07 华为技术有限公司 对存储设备中数据进行巡检的方法、设备及系统
US9325321B2 (en) * 2013-03-13 2016-04-26 Microsemi SoC Corporation Background auto-refresh apparatus and method for non-volatile memory array
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US8971093B2 (en) 2013-05-14 2015-03-03 Kabushiki Kaisha Toshiba Memory device and method of controlling memory device
US9329802B2 (en) 2013-11-11 2016-05-03 Qualcomm Incorporated Fail safe refresh of data stored in NAND memory device
US9240235B2 (en) 2013-12-19 2016-01-19 Sandisk Technologies Inc. Mitigating disturb effects for non-volatile memory
US20150213898A1 (en) * 2014-01-27 2015-07-30 Silicon Storage Technololgy, Inc. Byte Erasable Non-volatile Memory Architecture And Method Of Erasing Same
CN104299556A (zh) * 2014-10-13 2015-01-21 深圳市华星光电技术有限公司 驱动电路及显示装置
WO2016067846A1 (ja) 2014-10-31 2016-05-06 ソニー株式会社 メモリコントローラ、記憶装置、情報処理システムおよびメモリの制御方法
JP6320322B2 (ja) * 2014-12-29 2018-05-09 東芝メモリ株式会社 キャッシュメモリ装置及びプログラム
JP6421042B2 (ja) * 2015-01-16 2018-11-07 ルネサスエレクトロニクス株式会社 情報処理装置
WO2016154144A1 (en) * 2015-03-21 2016-09-29 NEO Semiconductor, Inc. Sonos byte-erasable eeprom
CN106708650B (zh) * 2015-11-17 2022-02-08 恩智浦美国有限公司 保护嵌入式非易失性存储器免受干扰
KR102513505B1 (ko) * 2016-01-29 2023-03-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 그것을 포함하는 데이터 저장 장치의 동작 방법
JP6718248B2 (ja) * 2016-02-17 2020-07-08 ルネサスエレクトロニクス株式会社 半導体装置
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
US10269440B2 (en) * 2016-05-17 2019-04-23 Silicon Storage Technology, Inc. Flash memory array with individual memory cell read, program and erase
US10074438B2 (en) * 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
KR102589259B1 (ko) * 2016-06-20 2023-10-12 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102559530B1 (ko) 2016-09-19 2023-07-27 에스케이하이닉스 주식회사 저항성 메모리 장치, 이를 위한 디스터번스 방지 회로 및 방법
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10354737B2 (en) * 2017-06-22 2019-07-16 Western Digital Technologies, Inc. Non-volatile memory sub-block erasure disturb management scheme
JP6563988B2 (ja) * 2017-08-24 2019-08-21 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP7212239B2 (ja) * 2018-06-05 2023-01-25 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
CN110703993B (zh) * 2019-09-20 2023-07-04 上海新储集成电路有限公司 一种用于短时非易失性存储器的数据刷新方法
CN114093405A (zh) * 2021-10-25 2022-02-25 长江存储科技有限责任公司 存储器数据的擦除方法、存储装置及存储系统

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805857B1 (ko) * 2006-03-02 2008-02-21 키몬다 아게 자기-정렬된 처리를 이용하여 제조된 상 변화 메모리
US8767450B2 (en) 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR101125390B1 (ko) * 2008-12-08 2012-03-27 후지쯔 가부시끼가이샤 비휘발성 메모리, 메모리 제어 장치, 메모리 제어 시스템, 및 비휘발성 메모리의 제어 방법
US8391067B2 (en) 2008-12-08 2013-03-05 Fujitsu Limited Nonvolatile memory
KR20210079393A (ko) * 2019-12-05 2021-06-29 샌디스크 테크놀로지스 엘엘씨 메모리 셀들에 대한 온도 및 사이클링 의존적 리프레시 동작

Also Published As

Publication number Publication date
JP4335659B2 (ja) 2009-09-30
US20050135155A1 (en) 2005-06-23
US7286401B2 (en) 2007-10-23
CN1629983A (zh) 2005-06-22
JP2005182909A (ja) 2005-07-07
TW200535847A (en) 2005-11-01

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