CN1629983A - 非易失性半导体存储器件 - Google Patents

非易失性半导体存储器件 Download PDF

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Publication number
CN1629983A
CN1629983A CNA200410098557XA CN200410098557A CN1629983A CN 1629983 A CN1629983 A CN 1629983A CN A200410098557X A CNA200410098557X A CN A200410098557XA CN 200410098557 A CN200410098557 A CN 200410098557A CN 1629983 A CN1629983 A CN 1629983A
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China
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mentioned
volatile memory
piece
data
semiconductor device
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CNA200410098557XA
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English (en)
Chinese (zh)
Inventor
石丸哲也
山添孝德
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1629983A publication Critical patent/CN1629983A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
CNA200410098557XA 2003-12-19 2004-12-09 非易失性半导体存储器件 Pending CN1629983A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置
JP422119/2003 2003-12-19

Publications (1)

Publication Number Publication Date
CN1629983A true CN1629983A (zh) 2005-06-22

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Family Applications (1)

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CNA200410098557XA Pending CN1629983A (zh) 2003-12-19 2004-12-09 非易失性半导体存储器件

Country Status (5)

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US (1) US7286401B2 (enExample)
JP (1) JP4335659B2 (enExample)
KR (1) KR20050062384A (enExample)
CN (1) CN1629983A (enExample)
TW (1) TW200535847A (enExample)

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CN102411988A (zh) * 2010-09-22 2012-04-11 株式会社东芝 半导体存储装置
US8189385B2 (en) 2007-12-26 2012-05-29 Semiconductor Components Industries, Llc Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
CN103049713A (zh) * 2012-12-20 2013-04-17 华为技术有限公司 对存储设备中数据进行巡检的方法、设备及系统
CN103137202A (zh) * 2011-11-24 2013-06-05 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
CN101471383B (zh) * 2007-12-26 2013-06-26 三洋电机株式会社 非易失性半导体存储装置,其制造方法以及非易失性存储器阵列
WO2014019156A1 (en) * 2012-08-01 2014-02-06 Datacard Corporation Variable erase for thermally rewritable cards
CN104299556A (zh) * 2014-10-13 2015-01-21 深圳市华星光电技术有限公司 驱动电路及显示装置
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
CN105808456A (zh) * 2015-01-16 2016-07-27 瑞萨电子株式会社 信息处理设备和闪速存储器控制方法
CN105934795A (zh) * 2014-01-27 2016-09-07 硅存储技术公司 字节可擦除非易失性存储器架构及其擦除方法
CN106205708A (zh) * 2014-12-29 2016-12-07 株式会社东芝 高速缓冲存储器装置
CN107025942A (zh) * 2016-01-29 2017-08-08 爱思开海力士有限公司 非易失性存储器装置及包括其的数据存储装置的操作方法
CN107430875A (zh) * 2015-03-21 2017-12-01 Neo半导体公司 Sonos字节可擦除的eeprom
CN107845400A (zh) * 2016-09-19 2018-03-27 爱思开海力士有限公司 阻变存储装置及用于操作其的电路和方法
CN110703993A (zh) * 2019-09-20 2020-01-17 上海新储集成电路有限公司 一种用于短时非易失性存储器的数据刷新方法
CN111863089A (zh) * 2019-04-24 2020-10-30 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法

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JP4696715B2 (ja) * 2005-06-21 2011-06-08 ソニー株式会社 記憶装置及び記憶装置の駆動方法
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US7324365B2 (en) * 2006-03-02 2008-01-29 Infineon Technologies Ag Phase change memory fabricated using self-aligned processing
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KR100875292B1 (ko) 2006-09-19 2008-12-23 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
TWI320180B (en) * 2007-01-12 2010-02-01 A driving method and a driving system for writing the phase change memory
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8767450B2 (en) 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR20090086816A (ko) 2008-02-11 2009-08-14 삼성전자주식회사 상변화 메모리 장치, 그것의 기록 방법, 그리고 그것을포함하는 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
WO2009042298A1 (en) * 2007-09-26 2009-04-02 Rambus Inc. Flash memory refresh
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US7855916B2 (en) * 2007-10-24 2010-12-21 Rao G R Mohan Nonvolatile memory systems with embedded fast read and write memories
KR101437123B1 (ko) * 2008-04-01 2014-09-02 삼성전자 주식회사 메모리 시스템 및 그것의 마모도 관리 방법
US8031521B1 (en) * 2008-05-20 2011-10-04 Marvell International Ltd. Reprogramming non-volatile memory devices for read disturbance mitigation
US7719876B2 (en) 2008-07-31 2010-05-18 Unity Semiconductor Corporation Preservation circuit and methods to maintain values representing data in one or more layers of memory
JP5422984B2 (ja) * 2008-12-08 2014-02-19 富士通株式会社 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法
US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
JP2011170941A (ja) * 2010-02-22 2011-09-01 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
KR101756111B1 (ko) 2011-04-15 2017-07-10 삼성전자 주식회사 메모리 컨트롤러 구동방법, 메모리 컨트롤러, 메모리 장치 및 메모리 시스템
US9325321B2 (en) * 2013-03-13 2016-04-26 Microsemi SoC Corporation Background auto-refresh apparatus and method for non-volatile memory array
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US8971093B2 (en) 2013-05-14 2015-03-03 Kabushiki Kaisha Toshiba Memory device and method of controlling memory device
US9329802B2 (en) 2013-11-11 2016-05-03 Qualcomm Incorporated Fail safe refresh of data stored in NAND memory device
US9240235B2 (en) 2013-12-19 2016-01-19 Sandisk Technologies Inc. Mitigating disturb effects for non-volatile memory
US9978448B2 (en) 2014-10-31 2018-05-22 Sony Corporation Memory controller, storage device, information processing system, and memory controlling method
CN106708650B (zh) * 2015-11-17 2022-02-08 恩智浦美国有限公司 保护嵌入式非易失性存储器免受干扰
JP6718248B2 (ja) * 2016-02-17 2020-07-08 ルネサスエレクトロニクス株式会社 半導体装置
US10269440B2 (en) * 2016-05-17 2019-04-23 Silicon Storage Technology, Inc. Flash memory array with individual memory cell read, program and erase
US10074438B2 (en) 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
KR102589259B1 (ko) * 2016-06-20 2023-10-12 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10354737B2 (en) * 2017-06-22 2019-07-16 Western Digital Technologies, Inc. Non-volatile memory sub-block erasure disturb management scheme
JP6563988B2 (ja) * 2017-08-24 2019-08-21 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP7212239B2 (ja) * 2018-06-05 2023-01-25 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法
US11037641B1 (en) * 2019-12-05 2021-06-15 Sandisk Technologies Llc Temperature and cycling dependent refresh operation for memory cells
CN114093405A (zh) * 2021-10-25 2022-02-25 长江存储科技有限责任公司 存储器数据的擦除方法、存储装置及存储系统

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Cited By (23)

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Publication number Priority date Publication date Assignee Title
US8189385B2 (en) 2007-12-26 2012-05-29 Semiconductor Components Industries, Llc Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
CN101471383B (zh) * 2007-12-26 2013-06-26 三洋电机株式会社 非易失性半导体存储装置,其制造方法以及非易失性存储器阵列
CN102411988A (zh) * 2010-09-22 2012-04-11 株式会社东芝 半导体存储装置
CN103137202A (zh) * 2011-11-24 2013-06-05 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
CN103137202B (zh) * 2011-11-24 2018-01-30 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
WO2014019156A1 (en) * 2012-08-01 2014-02-06 Datacard Corporation Variable erase for thermally rewritable cards
CN103049713A (zh) * 2012-12-20 2013-04-17 华为技术有限公司 对存储设备中数据进行巡检的方法、设备及系统
CN105934795A (zh) * 2014-01-27 2016-09-07 硅存储技术公司 字节可擦除非易失性存储器架构及其擦除方法
CN104299556A (zh) * 2014-10-13 2015-01-21 深圳市华星光电技术有限公司 驱动电路及显示装置
CN106205708A (zh) * 2014-12-29 2016-12-07 株式会社东芝 高速缓冲存储器装置
CN106205708B (zh) * 2014-12-29 2019-12-10 东芝存储器株式会社 高速缓冲存储器装置
CN105808456A (zh) * 2015-01-16 2016-07-27 瑞萨电子株式会社 信息处理设备和闪速存储器控制方法
CN107430875A (zh) * 2015-03-21 2017-12-01 Neo半导体公司 Sonos字节可擦除的eeprom
CN107025942B (zh) * 2016-01-29 2020-10-09 爱思开海力士有限公司 非易失性存储器装置及包括其的数据存储装置的操作方法
CN107025942A (zh) * 2016-01-29 2017-08-08 爱思开海力士有限公司 非易失性存储器装置及包括其的数据存储装置的操作方法
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
US10866734B2 (en) 2016-09-19 2020-12-15 SK Hynix Inc. Resistance variable memory apparatus, and circuit and method for operating therefor
CN107845400A (zh) * 2016-09-19 2018-03-27 爱思开海力士有限公司 阻变存储装置及用于操作其的电路和方法
CN107845400B (zh) * 2016-09-19 2021-06-11 爱思开海力士有限公司 阻变存储装置及用于操作其的电路和方法
CN111863089A (zh) * 2019-04-24 2020-10-30 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
CN110703993A (zh) * 2019-09-20 2020-01-17 上海新储集成电路有限公司 一种用于短时非易失性存储器的数据刷新方法
CN110703993B (zh) * 2019-09-20 2023-07-04 上海新储集成电路有限公司 一种用于短时非易失性存储器的数据刷新方法

Also Published As

Publication number Publication date
US7286401B2 (en) 2007-10-23
US20050135155A1 (en) 2005-06-23
TW200535847A (en) 2005-11-01
KR20050062384A (ko) 2005-06-23
JP4335659B2 (ja) 2009-09-30
JP2005182909A (ja) 2005-07-07

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