JP2005182909A5 - - Google Patents

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Publication number
JP2005182909A5
JP2005182909A5 JP2003422119A JP2003422119A JP2005182909A5 JP 2005182909 A5 JP2005182909 A5 JP 2005182909A5 JP 2003422119 A JP2003422119 A JP 2003422119A JP 2003422119 A JP2003422119 A JP 2003422119A JP 2005182909 A5 JP2005182909 A5 JP 2005182909A5
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JP
Japan
Prior art keywords
nonvolatile
memory device
semiconductor memory
refresh block
nonvolatile memory
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JP2003422119A
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English (en)
Japanese (ja)
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JP4335659B2 (ja
JP2005182909A (ja
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Priority claimed from JP2003422119A external-priority patent/JP4335659B2/ja
Priority to JP2003422119A priority Critical patent/JP4335659B2/ja
Priority to TW093133216A priority patent/TW200535847A/zh
Priority to US11/002,794 priority patent/US7286401B2/en
Priority to KR1020040103361A priority patent/KR20050062384A/ko
Priority to CNA200410098557XA priority patent/CN1629983A/zh
Publication of JP2005182909A publication Critical patent/JP2005182909A/ja
Publication of JP2005182909A5 publication Critical patent/JP2005182909A5/ja
Publication of JP4335659B2 publication Critical patent/JP4335659B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003422119A 2003-12-19 2003-12-19 不揮発性半導体記憶装置 Expired - Fee Related JP4335659B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置
TW093133216A TW200535847A (en) 2003-12-19 2004-11-01 Nonvolatile semiconductor memory device
US11/002,794 US7286401B2 (en) 2003-12-19 2004-12-03 Nonvolatile semiconductor memory device
CNA200410098557XA CN1629983A (zh) 2003-12-19 2004-12-09 非易失性半导体存储器件
KR1020040103361A KR20050062384A (ko) 2003-12-19 2004-12-09 불휘발성 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422119A JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005182909A JP2005182909A (ja) 2005-07-07
JP2005182909A5 true JP2005182909A5 (enExample) 2007-02-01
JP4335659B2 JP4335659B2 (ja) 2009-09-30

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ID=34675305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003422119A Expired - Fee Related JP4335659B2 (ja) 2003-12-19 2003-12-19 不揮発性半導体記憶装置

Country Status (5)

Country Link
US (1) US7286401B2 (enExample)
JP (1) JP4335659B2 (enExample)
KR (1) KR20050062384A (enExample)
CN (1) CN1629983A (enExample)
TW (1) TW200535847A (enExample)

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US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
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KR101756111B1 (ko) 2011-04-15 2017-07-10 삼성전자 주식회사 메모리 컨트롤러 구동방법, 메모리 컨트롤러, 메모리 장치 및 메모리 시스템
CN103137202B (zh) * 2011-11-24 2018-01-30 旺宏电子股份有限公司 记忆体及诱发热载子注入与非门串列的选取记忆胞的方法
WO2014019156A1 (en) * 2012-08-01 2014-02-06 Datacard Corporation Variable erase for thermally rewritable cards
CN103049713B (zh) * 2012-12-20 2016-12-07 华为技术有限公司 对存储设备中数据进行巡检的方法、设备及系统
US9325321B2 (en) * 2013-03-13 2016-04-26 Microsemi SoC Corporation Background auto-refresh apparatus and method for non-volatile memory array
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US8971093B2 (en) 2013-05-14 2015-03-03 Kabushiki Kaisha Toshiba Memory device and method of controlling memory device
US9329802B2 (en) 2013-11-11 2016-05-03 Qualcomm Incorporated Fail safe refresh of data stored in NAND memory device
US9240235B2 (en) 2013-12-19 2016-01-19 Sandisk Technologies Inc. Mitigating disturb effects for non-volatile memory
US20150213898A1 (en) * 2014-01-27 2015-07-30 Silicon Storage Technololgy, Inc. Byte Erasable Non-volatile Memory Architecture And Method Of Erasing Same
CN104299556A (zh) * 2014-10-13 2015-01-21 深圳市华星光电技术有限公司 驱动电路及显示装置
WO2016067846A1 (ja) 2014-10-31 2016-05-06 ソニー株式会社 メモリコントローラ、記憶装置、情報処理システムおよびメモリの制御方法
JP6320322B2 (ja) * 2014-12-29 2018-05-09 東芝メモリ株式会社 キャッシュメモリ装置及びプログラム
JP6421042B2 (ja) * 2015-01-16 2018-11-07 ルネサスエレクトロニクス株式会社 情報処理装置
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JP6718248B2 (ja) * 2016-02-17 2020-07-08 ルネサスエレクトロニクス株式会社 半導体装置
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
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US10074438B2 (en) * 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
KR102589259B1 (ko) * 2016-06-20 2023-10-12 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102559530B1 (ko) 2016-09-19 2023-07-27 에스케이하이닉스 주식회사 저항성 메모리 장치, 이를 위한 디스터번스 방지 회로 및 방법
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10354737B2 (en) * 2017-06-22 2019-07-16 Western Digital Technologies, Inc. Non-volatile memory sub-block erasure disturb management scheme
JP6563988B2 (ja) * 2017-08-24 2019-08-21 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP7212239B2 (ja) * 2018-06-05 2023-01-25 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
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