JP4334308B2 - 配線修正装置 - Google Patents
配線修正装置 Download PDFInfo
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- JP4334308B2 JP4334308B2 JP2003332211A JP2003332211A JP4334308B2 JP 4334308 B2 JP4334308 B2 JP 4334308B2 JP 2003332211 A JP2003332211 A JP 2003332211A JP 2003332211 A JP2003332211 A JP 2003332211A JP 4334308 B2 JP4334308 B2 JP 4334308B2
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- JP
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- Prior art keywords
- gas
- cvd
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
2;基板
3;第1の対物レンズ
4;第2の対物レンズ
5;レボルバ
6;ネジ
7;モータ
8;顕微レーザ光学系
9;AFコントローラ
10;スリット照明
11;レーザ光源
12;カメラ
13;第1のハーフミラー
14;スリット
15;第2のハーフミラー
16;第3のハーフミラー
17;XYステージ
18;照明
19;テレビモニタ
20;AF光学系
21;リレーレンズ
22;支持体
30;レーザ光
31;配線修正装置
32;レーザ光源ユニット
33a、33b;CVDガスユニット
41;打消ガス入口
42;原料ガス入口
43;窓パージガス入口
44;吸込ガス出口
45;吸込口
46;開口部
47、48;ノズル
49;窓
51;窓パージガス吹出口
52、53;円板
101;LCD
102;第1のガラス基板
103;液晶セル
104;画素
105;MOSFET
106;キャパシタ
107;ゲート電極
108;ゲート絶縁膜
109;機能膜
109a;下層
109b;上層
110;ソース電極
111;ドレイン電極
112;保護膜
C;共通電極
Cs;容量電極
G、G1〜Gm;ゲート線
S、S1〜Sn;ソース線
Claims (4)
- 基板上に形成された配線の欠陥部分をレーザCVDにより修正する配線修正装置において、前記欠陥部分にレーザ光を照射するレーザ光源ユニットと、相互に異なるCVDの原料ガスを生成する第1のCVDガスユニット及び第2のCVDガスユニットを含む複数のCVDガスユニットと、前記第1のCVDガスユニット及び前記第2のCVDガスユニットに夫々対応して設けられた第1のガスウインドウ及び第2のガスウインドウを含み前記複数のCVDガスユニットから供給された前記原料ガスを前記基板における前記レーザ光の照射部分に供給する複数のガスウインドウと、
前記第1のCVDガスユニットを前記第1のガスウインドウに接続する第1のガス路、及び前記第2のCVDガスユニットを前記第2のガスウインドウに接続する第2のガス路を含む複数のガス路と、を有し、
前記ガスウインドウは、前記レーザ光を透過して前記基板の欠陥部分に照射させる窓と、前記欠陥部分を修正した後の原料ガスを吸い込む吸込口と、この吸込口から吸い込んだ原料ガスを外部へと排出する吸込ガス出口と、を有し、
前記第1のCVDガスユニットには液体原料が供給され、前記液体原料を気化させて前記第1のガスウインドウに原料ガスを供給し、
前記第2のCVDガスユニットには固体原料が供給され、前記固体原料を昇華させて前記第2のガスウインドウに原料ガスを供給し、
前記ガスウインドウが前記CVDガスユニットの数と同じ数だけ設けられており、前記複数のCVDガスユニットが生成する原料ガスが相互に異なるガスウインドウに供給され、
相互に異なる材質からなる複数種類の配線を修正する際に、修正対象の各配線の材質に合わせて夫々前記複数のガスウインドウのうちの1つを選択して前記レーザ光源ユニットと前記基板との間に配置し、選択したガスウインドウに設けられた前記窓を介して前記レーザ光を欠陥部分に照射しながら、選択したガスウインドウに対応した原料ガスを供給して前記欠陥部分を修正すると共に、選択したガスウインドウに設けられた前記吸込口及び吸込ガス出口を介して前記欠陥修正後の原料ガスを外部へと排出することを特徴とする配線修正装置。 - 前記第1のCVDガスユニットから供給される原料ガスがDMAHガスであることを特徴とする請求項1に記載の配線修正装置。
- 前記第2のCVDガスユニットから供給される原料ガスがCr(CO)6ガスであることを特徴とする請求項1又は2に記載の配線修正装置。
- 前記レーザ光が、波長が349nmのNd:YAGレーザの第三高調波であることを特徴とする請求項1乃至3のいずれか1項に記載の配線修正装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003332211A JP4334308B2 (ja) | 2003-09-24 | 2003-09-24 | 配線修正装置 |
TW093127446A TWI315353B (en) | 2003-09-24 | 2004-09-10 | Wiring repair apparatus |
US10/940,982 US7371286B2 (en) | 2003-09-24 | 2004-09-15 | Wiring repair apparatus |
KR1020040076587A KR100787725B1 (ko) | 2003-09-24 | 2004-09-23 | 배선 수정 장치 |
CNB200410079893XA CN100334253C (zh) | 2003-09-24 | 2004-09-24 | 布线修复设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003332211A JP4334308B2 (ja) | 2003-09-24 | 2003-09-24 | 配線修正装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101222A JP2005101222A (ja) | 2005-04-14 |
JP4334308B2 true JP4334308B2 (ja) | 2009-09-30 |
Family
ID=34308968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003332211A Expired - Fee Related JP4334308B2 (ja) | 2003-09-24 | 2003-09-24 | 配線修正装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7371286B2 (ja) |
JP (1) | JP4334308B2 (ja) |
KR (1) | KR100787725B1 (ja) |
CN (1) | CN100334253C (ja) |
TW (1) | TWI315353B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
JP2006317726A (ja) * | 2005-05-13 | 2006-11-24 | Nec Lcd Technologies Ltd | 断線修正方法及びアクティブマトリックス基板の製造方法並びに表示装置 |
JP4980672B2 (ja) * | 2006-08-23 | 2012-07-18 | 大陽日酸株式会社 | 気相成長装置 |
WO2008023697A1 (fr) * | 2006-08-23 | 2008-02-28 | Taiyo Nippon Sanso Corporation | système de croissance en phase vapeur |
JP5214862B2 (ja) * | 2006-08-23 | 2013-06-19 | 大陽日酸株式会社 | 気相成長装置 |
TWI421916B (zh) * | 2006-09-07 | 2014-01-01 | Ntn Toyo Bearing Co Ltd | A pattern correction method and a pattern correction device |
JP4987435B2 (ja) * | 2006-11-15 | 2012-07-25 | Ntn株式会社 | 欠陥修正方法および欠陥修正装置 |
KR100824964B1 (ko) * | 2006-12-26 | 2008-04-28 | 주식회사 코윈디에스티 | 레이저를 이용한 금속박막 형성장치 및 그 방법 |
JP5481715B2 (ja) * | 2007-10-22 | 2014-04-23 | 株式会社ブイ・テクノロジー | レーザ加工装置及びレーザ加工方法 |
JP5206979B2 (ja) * | 2009-03-13 | 2013-06-12 | オムロン株式会社 | レーザcvdによる薄膜形成方法、及び同方法に好適なガスウィンドウ |
US8211782B2 (en) | 2009-10-23 | 2012-07-03 | Palo Alto Research Center Incorporated | Printed material constrained by well structures |
JP5476519B2 (ja) * | 2010-01-20 | 2014-04-23 | 株式会社ブイ・テクノロジー | レーザ加工装置 |
KR101069809B1 (ko) * | 2010-04-08 | 2011-10-04 | 주식회사 코윈디에스티 | 패드 패턴 수리장치 |
CN102759829A (zh) * | 2012-07-03 | 2012-10-31 | 深圳市华星光电技术有限公司 | 阵列基板的断线修补装置及修补方法 |
CN102828166B (zh) * | 2012-08-24 | 2014-07-16 | 京东方科技集团股份有限公司 | 化学气相沉积维修设备 |
CN103074614B (zh) * | 2012-12-25 | 2015-10-28 | 王奉瑾 | 激光cvd镀膜设备 |
JP5663776B1 (ja) * | 2014-03-27 | 2015-02-04 | 福井県 | 吸引方法及び吸引装置並びにレーザ加工方法及びレーザ加工装置 |
CN105970210B (zh) * | 2016-05-26 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种阵列基板的断线修复装置及阵列基板的断线修复方法 |
CN106773177B (zh) * | 2017-01-03 | 2020-03-06 | 京东方科技集团股份有限公司 | 一种信号线的修复系统及修复方法 |
CN109927288B (zh) * | 2017-12-18 | 2021-12-03 | 上海微电子装备(集团)股份有限公司 | 一种增材制造装置和制造方法 |
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US4778693A (en) * | 1986-10-17 | 1988-10-18 | Quantronix Corporation | Photolithographic mask repair system |
JPH0799746B2 (ja) * | 1994-02-10 | 1995-10-25 | 株式会社日立製作所 | 配線形成装置 |
KR0126101B1 (ko) * | 1994-07-07 | 1997-12-26 | 김주용 | 리페어 마스크 형성방법 |
KR0158780B1 (ko) * | 1994-12-22 | 1998-11-16 | 가네꼬 히사시 | 화학 증착법에 의한 박막형성 방법 및 장치 |
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-
2003
- 2003-09-24 JP JP2003332211A patent/JP4334308B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-10 TW TW093127446A patent/TWI315353B/zh not_active IP Right Cessation
- 2004-09-15 US US10/940,982 patent/US7371286B2/en not_active Expired - Fee Related
- 2004-09-23 KR KR1020040076587A patent/KR100787725B1/ko active IP Right Grant
- 2004-09-24 CN CNB200410079893XA patent/CN100334253C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200512312A (en) | 2005-04-01 |
US7371286B2 (en) | 2008-05-13 |
US20050061780A1 (en) | 2005-03-24 |
CN1614085A (zh) | 2005-05-11 |
JP2005101222A (ja) | 2005-04-14 |
TWI315353B (en) | 2009-10-01 |
KR20050030155A (ko) | 2005-03-29 |
KR100787725B1 (ko) | 2007-12-24 |
CN100334253C (zh) | 2007-08-29 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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