1290647 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於藉照射雷射光，修復顯示畫面之不良部 分（缺陷畫素）所得到之液晶顯示裝置之製造方法與液晶 顯示裝置，及使用於這些液晶顯示裝置製造方法之雷射修 復裝置。 【先前技術】 近年’作爲使用於個人電腦或文書處理機等之顯示裝 置傾向使用許多消費電力少而薄型且輕量之液晶顯示裝置 (LCD: Liquid Crystal Dislpay)。尤其其中作爲一例，將以 非晶質（amorphous )矽（a-Si)膜，薄膜電晶體（TFT:Thin Film Transistor )對應於畫素作爲開關元件使用之主動矩陣型 液晶顯示裝置’即使以多畫素構成其對比或響應之劣化 少’並且因也可中間色顯示作爲全彩色電視或〇 A機器用 之顯示裝置使用。 然而’此T F T係形成於陣列基板，對於構成畫素之 畫素電極充電·放電電荷使其在陣列基板與對向基板之間 發生電位差’爲了顯示畫素調整其液晶分子之排列。於近 年’隨著液晶顯示裝置顯示部分之大畫面化或高精彩化， 畫素數已變成超過數1 〇萬〜1 〇 〇萬。亦即，不使這些 畫素發生缺陷加以顯示進行製造爲非常困難之事，由於某 種原因致使不能將T F T正常地驅動，不能正常地形成畫 素電極’或’在陣列基板與對向基板之間挾住異物對於畫 -4 - 1290647 (2) 素電極不能施加正確電壓之不妥情形致使發生缺陷畫素， 具有不能顯示正常畫面之問題。 爲了修復這種缺陷畫素，使用雷射光加工配向膜以減 低畫素透過率或反射率之方法修復消除缺陷之方法，爲例 如揭示於例如日本專利特開昭6 0 - 2 4 3 6 3 5號公 報、日本專利特開平5 — 2 9 7 3 8 7號公報、日本專利 特開平5 - 3 1 3 1 6 7號公報、日本專利特開平7 — 225381號公報、曰本專利特開平8 - 15660號 公報、日本專利特開平9 一 2 5 8 1 5 5號公報等（將這 些方法總稱第1習知例）。 並且，裝設救濟T F T動作之冗餘電路（預備配線） 施加直流電壓以修復缺陷畫素之方法，例如揭示於日本專 利特開昭6 3 — 1 3 6 0 7 6號公報、日本專利特開平2 一 3 0 2 3號公報、日本專利特開平9 一 8 0 47 0號公 報、日本專利特開平1 〇 — 1 0 4 6 4 8號公報、日本專 利特開平1 0 — 2 3 2 4 1 2號公報、日本專利特開平 1 〇 — 3 1 9 4 3 8號公報等（將這些方法總稱第2習知 例）。並且，爲了修復缺陷畫素使用雷射光將缺陷部位之 閘電極與汲極電極經由半導體層或層間絕緣膜直接連接施 加直流電壓之方法，也例如揭示於日本專利特開平5 - 2 1 〇 1 1 1號公報（將此方法稱爲第3習知例）。 【發明內容】 [發明所欲解決之問題] -5 - 1290647 (3) 然而，若依據第1習知例，雖然雷射光之照射本身成 功之機率爲高（9 0 %以上），但是因爲修復缺陷畫素之 機制未被充分揭示，會發生過分給與雷射光能量致使傷及 液晶顯示裝置，更且所修正之畫素無法動作而變成黑（常 白模態（normal white mode )之情形時），有時在缺陷畫 素之光透過率或反射率發生不能通過預先所設定之製品規 格之情形發生。又，若依據第2習知例雖然可確保高顯示 品質，但是因要求細腻作業致使雷射光之照射本身成功之 機率就變低。並且，雖然對於起因於T F T之動作不良之 缺陷畫素之修.復有效，但是對於T F T或配線起因於未正 常形成之之缺陷陣列基板與對向基板挾住異物所起因之缺 陷則無效。因其等原因，缺陷畫素之修復成功機率之總計 就變低（30〜50%左右）。 除此之外，若依據第3習知例因施加於畫素電極之直 流電壓，連同液晶分子所存在之離子，就蓄積於對應於缺 陷畫素之畫素電極，導致縮短液晶顯示裝置之壽命。 本發明係依據上述情形所開發者，其目的係藉積極地 利用關於缺陷畫素之修復機制’對於T F T或配線未被正 常形成所起因之缺陷或缺陷基板與對向基板之間挾住異物 所起因之缺陷也可對應，而提供一種達成抑制對於對應於 缺陷畫素之畫素電極之離子蓄積所得到之液晶顯示裝置之 製造方法與液晶顯示裝置’及使用於這些液晶顯示裝置之 製造方法之雷射修復裝置。 1290647 (4) [解決問題之手段] 本發明申請專利範圍第1項之液晶顯示裝置之製造方 法，其係具有： 在第1基板上至少形成第1電極及第1配向膜之步驟 ， 與 在第2基板上至少形成第2電極及第2配向膜之步 驟，與 在該第1基板及該第2基板之間使其具有液晶之狀態 下將這些基板互相使其對向加以密封之步驟，與 在該第1電極與該第2電極之間使其具有電位差以顯 示畫面進行檢查之步驟，與 修復所檢測出之構成該畫面之畫素之缺陷部分之步 驟， 其特徵爲上述修復步驟同時具有：與具缺陷之該畫素 對應地，針對該每一畫素至少有二個分別以機械方式連接 的開關元件，使1個該開關元件選擇性地電連接於該畫素 之步驟；及 對具缺陷之該畫素照射雷射光至少使該第1配向膜或 該第2配向膜變質之步驟。 本發明申請專利範圍第2項’係於申請專利範圍第1 項之液晶顯示裝置之製造方法中’其特徵爲··使上述第1 配向膜或上述第2配向膜變質之步驟，係以進行使一個開 關元件選擇性地電連接於該畫素之步驟後該缺陷乃未被修 復之畫素作爲對象予以進行者。 -7- 1290647 (5) 本發明申請專利範圍第3項，係於申請專利範圍第1 項或第2項之液晶顯示裝置之製造方法中，其特徵爲：上 述雷射光，在將該開關元件與該畫素選擇性地予以電連接 之步驟時具有2 0 n S至2 0 0 n s之脈衝寬度，在使該 第1配向膜或該第2配向膜至少變質之步驟時具有1 0 n s以下之脈衝寬度。 本發明申請專利範圍第4項之液晶顯示裝置之製造方 法，其係具有： 在第1基板上至少形成第1電極及第1配向膜之步驟 > 與 在第2基板上至少形成第2電極及第2配向膜之步驟 ，與 在該第1基板及該第2基板之間具有液晶之狀態下將 彼等基板互相對向加以密封之步驟，與 在該第1電極與該第2電極之間使其具有電位差以顯 示畫面進行檢測之步驟，與 對該檢測所檢測出之構成該畫面之畫素之中產生缺陷 部分之畫素照射雷射光，至少使該第1配向膜或該第2配 向膜變質，以修復發生該缺陷之畫素的步驟，其特徵爲上 述修復步驟具有：對發生該缺陷之畫素將具有較該畫素尺 寸更小照射面之脈衝狀雷射光照射成多數個該照射面成爲 互相分離開之步驟/與 藉由該照射步驟，使該照射面之配向膜大致消失之同 時，對位於該照射面周邊部之配向膜，藉由該雷射光具有 -8- 1290647 (6) 之能量使以上述照射面爲中心以波紋狀堆積飛濺物，藉由 堆積成波紋狀之該飛濺物與該之消失，使發生該缺陷之畫 素對光之透過率或反射率較該雷射光照射前降低的步驟。 本發明申請專利範圍第5項之液晶顯示裝置，其係具 有·· 第1基板，至少形成有第1電極及第1配向膜；與 第2基板，至少形成有第2電極及第2配向膜；與 液晶，被密封於上述第1基板與上述第2基板之間， 並且，依據被賦予該第1配向膜及該第2配向膜之配 向性而排列成特定方向；與 多數個畫素，其可以對應該第1電極與該第2電極之 間所施加電壓而發生之電位差，依據該配向性使該液晶對 光之透過率或反射率發生變化的液晶顯示裝置； 其特徵爲： 上述多數個畫素，係具有：對應於彼等畫素而依該每 一個畫素分別設置之至少二個開關元件，同時， 上述多數個畫素之中至少一個，係具有藉由雷射光照 射可使該第1配向膜或該第2配向膜至少變質之部分。 本發明申請專利範圍第6項之液晶顯示裝置，其係具 有： 第1基板，至少形成有第1電極及第1配向膜；與 第2基板，至少形成有第2電極及第2配向膜；與 液晶，被密封於上述第1基板與上述第2基板之間， 並且，依據被賦予該第1配向膜及該第2配向膜之配 -9- 1290647 (7) 向性而排列成特定方向；與 多數個畫素，其可以對應該第1電極與該第2電極之 . 間所施加電壓而產生之電位差，依據該配向性使該液晶對 _ 光之透過率或反射率發生變化的液晶顯示裝置； / 其特徵爲具有： 1 具有較彼等畫素之尺寸更小照射面之脈衝狀雷射光被 照射成使多數個該照射面互相分離，至少二個該照射面之 配向膜大略消失之部分，及 φ 和該照射面周邊部之配向膜對應地，以該照射面作爲 中心藉由上述雷射光所具備能量堆積飛濺物而呈現波紋狀 之部分。 本發明之雷射修復裝置，其係具有： 雷射光源，用於對構成液晶面板之配向膜照射雷射 光； 雷射光控制裝置，用來調整從該雷射光源射出之雷射 光所具有之脈衝寬度； φ 載置台，設置有該液晶面板；及 掃描裝置，可對該液晶面板進行該雷射光之相對掃 描； 其特徵爲： ' 上述雷射光控制裝置，係藉由爲激發該雷射光源而被 ·' 輸入之能量之調整來調整該脈衝寬度。 本發明另一雷射修復裝置，其係具有： 雷射光源，用於對構成液晶面板之配向膜照射雷射 -10- 1290647 (8) 光； 雷射光控制裝置，甩來調整從該雷射光源射出之雷射 光所具有之脈衝寬度； 載置台，設置有該液晶面板；及 掃描裝置，可對該液晶面板進行該雷射光之相對掃 描； 其特徵爲： 上述雷射光控制裝置，係藉由構成該雷射光源之Q開 關之開/關調整用而被輸入之能量之調整來調整上述脈衝 寬度。 依據這些發明，可以積極利用缺陷畫素修復之相關機 制，可以因應T F T或配線未被正常形成所引起之缺陷或 陣列基板與對向基板之間挾住異物所引起之缺陷，可以抑 制對應於缺陷畫素之畫素電極上之離子蓄積。結果，可以 得到顯示特性良好之液晶顯示裝置。 【實施方式】 茲參照關於本發明之第1實施形態之一例加以簡化之 圖式，以常白模態而透過型且主動矩陣型之液晶顯示裝置 (對角5英吋）爲例說明如下。按，本發明也可適用於常 黑模態之反射型之液晶顯示裝置。 第1圖係表示關於本實施形態之畫素部之剖面圖，第 2圖係表示此畫素部之上視圖。按，第1圖係表示第2圖 之Y - Y ’線之剖面。於此液晶顯示裝置1 ，陣列基板2 -11 - 1290647 Ο) (第1基板之例）與對向基板3 (第2基板之例），爲分 別經由由聚亞胺所成之第1配向膜4及第2配向膜5 ，將 未圖示之間隔件作爲支柱，以保持扭轉向列型之液晶組成 物（以下只稱液晶）6之狀態，以未圖示之密封劑密封。 此液晶6 ，係在陣列基板2與對向基板3之間如扭轉其分 子9 0 ° 。又，在陣列基板2與對向基板3與外面分別有 第1偏光板7與第2偏光板8，爲其等之偏光軸以互相成 直交之狀態（交叉尼哥爾（cross Nicol )狀態）張貼。 按，液晶6之塡充也可以在以此密封劑之密封前將液 晶滴落於陣列.基板2或對向基板3上之後，張貼陣列基板 2與對向基板3，也可以由此密封劑之密封後，對於以此 密封所形成之陣列基板與對向基板之密封空間部內，從密 封劑之注入口注入液晶6或進行真空吸引。 在陣列基板2，係在透明之玻璃基板9上有6 4 0 X 3條之訊號線（亦稱源極電極線）1 0與4 8 0條之掃描 線（亦稱閘電極線）1 1爲配置成約略直交形成。在各個 訊號線1 0與掃描線1 1之交點附近，經由分別屬於開關 元件之TFT1 2配置有畫素電極13。按，此畫素電極 1 3係沿著訊號線1 0之邊爲形成8 0 # m，並且，沿著 掃描線1 1之邊形成爲6 0 // m。像這種畫素電極1 3 ， 爲以1 0 0 // m之節距向縱橫排列配置，以形成液晶顯示 裝置之顯示面。 於第3圖如作爲L C D單元之槪略構成所示，雖然控 制掃描線與訊號線，但是，變成分別由閘驅動器與源極驅 •12- 1290647 (10) 動益所構成之驅動部（雖然未詳細圖示，但是通常爲在顯 示面之外部分別連接驅動器之模組）。在各驅動器分別輸 入來自訊號控制部之影像訊號與同步訊號及電源分之電 力。 閘驅動器，係在1幀（60Hz) 1次，具有選擇各 掃描線機能之數位電路，而在掃描時間（1 5〜4 0 // s )之周期動作。源極驅動器，係由形成於陣列基板2 上之透明之異方性導電膜（以下稱爲I T〇（Indium Tin Oxide )膜）所成之畫素電極1 3 (第1電極之例），與 對於在對向基板3上同樣形成I T〇膜所成之對向電極 (第2電極之例）之間所塡充之液晶6使其發生電位差而 動作。 具體上，爲藉對於掃描線施加電壓形成經由T F T 1 2施加因應影像資訊之電壓之電路。此時，對於液晶6 若持續施加直流電力時顯示就會劣化，所以，對於對向電 極施加交流電力，交替地給與相反極性之電壓。將此稱爲 反相驅動，藉其源極驅動器以20〜100 (Hz)之高 頻率動作。 按，T F T 1 2雖然將掃描線1 1本身作爲源極電 極，但是在玻璃基板9上，首先第一以S i〇X、 S 1 NX 或更且以 TE〇S ( Tetra Ethyl Ortho Silicate:Si 0C2 H5 4 )等所構成之底塗層 (under coat)(絕緣膜）1 4、與屬於含有氫之非晶質半 導體膜之非晶質矽（a - S i : Η )膜（以上只稱半導體 -13- 1290647 (11) 膜）1 5依序疊層加以成膜。按，於此，作爲成膜裝置， 通常係使用 C V D ( Chemical Vapor Deposition)。 在此半導體膜1 5上，在掃描線1 1配置自行整合使 用3 i NX所形成之頻道保護膜1 6。並且，此半導體膜 1 5係經由作爲低電阻半導體膜1 7所配置之η +型a -S i : Η膜及將源極電極1 8，對於各個畫素電極1 3以 電方式連接。又，半導體膜15經由從η+型a—Si : Η膜（低電阻半導體膜）1 7及訊號線1 0延出之汲極電 極1 9，對於訊號線1 0以電方式連接。 又，對於掃描線1 1約略成平行，形成且具有與畫素 電極1 3重複之領域所配置之補助電容線2 0，並且’由 畫素電極1 3與補助電容線2 0形成補助電容（C s )。 按，補助電容線2 0係使其具有與對向基板3約略相同電 位。於對向基板3，在透明玻璃基板9上，於陣列基板2 上之TFT 1 2及訊號線1 0與畫素電極1 3間之空隙， 或掃描線1 1與畫素電極1 3間之間隙分別加以遮光’形 成具有成矩陣狀互相疊層之C r (鉻）與C r〇所構成之 遮光層2 1 ( BM:Black Matrix)。這些構造係經過 EP(Photo Engaving Process)步驟所形成。 按，於遮光層2 1矩陣狀之各圖案內’爲了實現於顯 示面之彩色顯示，由紅（R)、綠（G)、藍（B)之三 原色所構成之濾色器分別設有彩色部2 2 ’並且’經由有 機保護膜2 3具有由透明I T ◦膜所成之對向電極2 4。 關於這種常白模態之液晶顯示裝置1之動作參照第4圖說 -14 - 1290647 (12) 明如下。 按，本說明書係擬以T N模態（Twisted Nematic Mode )爲例說明，但是，因利用配向膜與液晶分子之動 作毫無兩樣，所以對於向列（nematic )型之液晶組成物 或Chiral nematic 型之液晶組成物或添加Chiral化合物 之 STN 模態（Super Twisted Nematic Mode)、DSTN 模態 (Double Super Twisted Nematic Mode)、TSTN 模態（Triple Super Twisted Nematic Mode )之外還有 FSTN 模態 (Film Super Twisted Nematic Mode )、並且以 Chiral Smetic 型之液晶組成物所構成之強電介質性液晶 (FLC )模態（Ferroelectic Liquid Crystal Mode)等，當然 也可成爲本發明之對象。 構成液晶6之液晶分子，因具有個個極性所以施加電 場時就向一定方向排列。以液晶畫面之顯示係利用這種性 質。首先，如第4 (a)圖所示，發生於畫素電極13與 對向電極2 4間之電位差，係從液晶6發生配向之閾値電 壓到0 ( V ) ’射入光係由1偏光板7使其變成直線偏 光，並且，沿著構成液晶6之各個液晶分子之配向方向約 略將偏光軸邊旋光9 0 °通過第2偏光板8。其結果，射 入光射出於液晶顯示裝置1之顯示畫面而將顯示白（明 亮）畫素。此係，因第1偏光板7與第2偏光板8配置於 交叉尼哥爾位置所致。 對此，如第4 (b)圖所示，發生於畫素電極13與 對向電極2 4間之電位差，若液晶6較容易發生之閾値電 -15- 1290647 (13) 壓爲大時，因各個液晶分子係沿著電場排列，射入角係由 第1偏光板7變成直線偏光，並且，欲將液晶6使其照樣 通過。但是，通過液晶6之直線偏光，因第2偏光板8透 過射入光爲具偏移9 0 °之偏光軸，所以不能通過第2偏 光板8。其結果，射入光不射出於液晶顯示裝置1之顯示 畫面而將顯示黑（暗）畫素。此係因第1偏光板7與第2 偏光板8配置成平行尼哥爾位置所致。 上述係常白模態之說明，但是常黑模態時，只有白畫 素與黑畫素之顯示更替而已，作用本身並無改變。在上述 之閾値電壓之上下，因模態之差異只有顯示畫素之顏色更 替而已。 接著，於這種常白模態之液晶顯示裝置1 ，在畫素電 極1 3與對向電極2 4之間導電性異物經過製造步驟之過 程摻入致使畫素電極1 3與對向電極2 4約略變成同電位 之因素、或畫素電極1 3與補助電容線2 0爲因絕緣膜 14之絕緣不良而短路畫素電極13爲與對於對向電極 2 4電位約略相等之補助電容線2 0約略變成同電位之因 素等，所以畫素電極1 3與對向電極2 4間之電位差約略 變成0 ( V )。此情形時，在液晶顯示裝置1之顯示畫面 之透過率經常變高，而發生亮點缺陷。 於本實施形態，將發生亮點缺陷之畫素如下地檢出。 首先，對於液晶顯示裝置1之訊號線1 0，將既定之某電 壓作爲中心依各幀時間施加極性反相爲+ 5 ( V )與一 5 (V )之訊號電壓（Vsig )，並且，對於對向電極2 4藉 -16- 1290647 (14) 施加5 ( V )之對向電壓（Vcom)及對於補助電容線 2 0施加5 ( V )電壓’對於各掃描線1 1依序供給脈衝 狀之掃描電壓（Vg)，以顯示黑色（暗）。 並且，檢出位於顯示畫面之周邊及中央之任意1 〇 〇 個顯示畫素之顯示亮度，將其平均値記憶爲”基準之黑電 平”。其後，依序掃描顯示畫面，檢出對此黑電平所顯示 之亮度爲3 0 %以上之大畫素，而記憶其位置。將對應於 此位置之畫素作爲發生亮點缺陷之畫素加以處理。 像這樣，將所檢出發生亮點缺陷之畫素使用雷射光之 照射修復之方法說明如下。首先，如第5圖表示進行此修 正之雷射修復裝置2 5。雷射振盪器2 6係將未圖示之半 導體雷射 （Laser Diode:以下，稱爲 LD)使用於 AO(acoursto-optic:音響光學）-Q開關動作之Nd:YAG雷射 (Neodymium .-Yttrium Aluminium Garnet Laser)。按，作 爲加工用物鏡透鏡2 7因使用具有汎用性之光學顯微鏡用 之物鏡，所以’從此雷射振盪器2 6之雷射光，係可使用 Nd:YAG雷射或Nd:YLF雷射之基本波、第二高 次諧波，並且’再可使用紫外光之第三高次諧波、第四高 次諧波。又’ L D也可置換爲氪、孤光燈。 本雷射修復裝置2 5也可對應於本說明書之最後所述 之修復方法成爲可變更雷射光之脈衝寬度（”反復頻率x 2 ”之逆數）。一般’於A 0 - Q開關動作之固體雷射係 當雷射諧振器之長度（構成雷射振盪器2 6之一組諧振鏡 間之距離）爲一定時因在激勵輸入（對於LD之施加電力 •17- 1290647 (15) 大小）及雷射諧振器內部之能量損失引起脈衝寬度之變 化。 亦即，利用若此激勵輸入變小或雷射諧振器內部之能 \ 量損失變大時，脈衝寬度變大，在雷射諧振器內部之能量 / 損失，以雷射光所射出之時間改變對於A〇- Q開關之施 ’ 加電力加以控制。若不以對於A〇- Q開關之施加電力進 行控制時，藉改變對於L D之施加電力之大小就可控制。 按，這些電力大小之調整係以來自雷射光源2 8之供應電 φ 力進行調整。 於此，具體上係改變對於L D之施加電力大小之情形 爲例表示。在施加電壓爲一定（通常爲2〜3 (V)左 右）下雷射光之反復頻率爲作爲1 (kHz)以下改變施 加電流時，對於L D之施加電流與雷射光之脈衝寬度之關 係（以虛線表示）及對於L D之施加電流與雷射光所具能 量之關係（以實線表示）係如第6圖所示。此圖表時’因 對於L D之施加電流爲相當於激勵輸入，所以對於L D之 · 施加電流愈小時脈衝寬度變愈長，並且，雷射光所具之能 量曉得會變小。亦即，曉得雷射振盪器之長度爲一定時依 存於激勵輸入雷射光之脈衝寬度會發生變化。 但是，於這種方法改變脈衝寬度時雷射光所具能量也 - 會變化，所以爲了以最佳能量進行缺陷畫素之修復所需於 / 此雷射修復裝置2 5裝設有可變光衰減器（variable1290647 (1) Technical Field of the Invention The present invention relates to a liquid crystal display device manufacturing method and a liquid crystal display device obtained by irradiating laser light and repairing a defective portion (defective pixel) of a display image, and A laser repairing device used in the manufacturing method of these liquid crystal display devices. [Prior Art] In recent years, as a display device used for a personal computer or a word processor or the like, a liquid crystal display device (LCD: Liquid Crystal Dislpay) having a small amount of power consumption and having a small amount of light is used. In particular, as an example, an active matrix liquid crystal display device in which an amorphous (a-Si) film or a thin film transistor (TFT: Thin Film Transistor) is used as a switching element is used The pixels constitute less contrast in their contrast or response, and are also used as display devices for full color televisions or 〇A machines because they can also be displayed in intermediate colors. However, the T F T is formed on the array substrate, and charges and discharge charges are applied to the pixel electrodes constituting the pixels to cause a potential difference between the array substrate and the counter substrate. The alignment of the liquid crystal molecules is adjusted for displaying pixels. In recent years, as the display portion of the liquid crystal display device has been greatly enlarged or highlighted, the number of pixels has become more than 1 million to 1 million. That is, it is very difficult to manufacture such a pixel without displaying defects, and for some reason, the TFT cannot be normally driven, and the pixel electrode 'or 'on the array substrate and the opposite substrate cannot be formed normally. Between holding a foreign object for painting -4 - 1290647 (2) The improper polarity of the electrode can not be applied to cause a defective pixel, which has a problem that the normal picture cannot be displayed. In order to repair such a defective pixel, a method of repairing an alignment film by using a laser light to reduce a pixel transmittance or a reflectance is disclosed, for example, in Japanese Patent Laid-Open No. 60- 2 4 3 6 3 5 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 5 - 3 1 3 3 7 7 , Japanese Patent Laid-Open No. Hei 5 - 3 1 3 1 7 7 , Japanese Patent Laid-Open No. Hei 7-225381, and Japanese Patent Laid-Open No. Hei 8- Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. In addition, a method of applying a DC voltage to repair a defective pixel by a redundant circuit (pre-wiring) for rescuing a TFT operation is disclosed, for example, in Japanese Patent Laid-Open Publication No. SHO 63-136076, Japanese Patent Laid-Open Japanese Patent Laid-Open No. Hei 9-8047, Japanese Patent Laid-Open Patent Publication No. Hei No. 1 0 4 6 4 No., Japanese Patent Laid-Open No. 1 0 — 2 3 2 4 1 Japanese Laid-Open Patent Publication No. Hei No. Hei No. 3 1 9 4 3 8 (these methods are collectively referred to as the second conventional example). Further, in order to repair a defective pixel, a method of applying a direct current voltage by directly connecting a gate electrode of a defect portion and a drain electrode via a semiconductor layer or an interlayer insulating film in order to repair a defective pixel is disclosed, for example, in Japanese Patent Laid-Open No. 5-2 1 〇1 1 Japanese Patent Publication No. 1 (this method is referred to as a third conventional example). [Problem to be Solved by the Invention] -5 - 1290647 (3) However, according to the first conventional example, although the probability of successful irradiation of the laser light itself is high (more than 90%), it is repaired. The mechanism of the defective pixel is not fully revealed, and the excessively applied laser light energy causes damage to the liquid crystal display device, and the corrected pixel becomes incapable of turning into a black (normal white mode) condition. ), sometimes the light transmittance or reflectance of the defective pixel does not pass through the specifications of the product set in advance. Further, according to the second conventional example, high display quality can be ensured, but the probability of successful irradiation of the laser light itself is lowered due to the demand for delicate work. Further, although the repair of the defective pixel due to the malfunction of the T F T is effective, it is ineffective for the defect caused by the defective array substrate and the opposite substrate which are not normally formed by the T F T or the wiring. For other reasons, the total probability of repair of defective pixels is low (about 30 to 50%). In addition, according to the third conventional example, the DC voltage applied to the pixel electrode, together with the ions existing in the liquid crystal molecules, accumulates on the pixel electrode corresponding to the defective pixel, resulting in shortening the life of the liquid crystal display device. . The present invention is based on the above circumstances, and its purpose is to actively utilize the repair mechanism for defective pixels 'the defects caused by the TFT or the wiring not being formed normally or the foreign matter between the defective substrate and the opposite substrate A defect of the cause may be correspondingly provided, and a method for manufacturing a liquid crystal display device obtained by suppressing ion accumulation of a pixel electrode corresponding to a defective pixel, a liquid crystal display device, and a manufacturing method for the liquid crystal display device are provided. Laser repair device. The method for manufacturing a liquid crystal display device according to the first aspect of the present invention, comprising: the step of forming at least a first electrode and a first alignment film on the first substrate, and a step of forming at least a second electrode and a second alignment film on the second substrate, and sealing the substrates against each other in a state where the liquid crystal is provided between the first substrate and the second substrate. a step of inspecting between the first electrode and the second electrode to have a potential difference to display a screen, and a step of repairing the detected defective portion of the pixel of the screen, wherein the repairing step is simultaneous Having: at least two mechanically connected switching elements for each pixel, corresponding to the pixel having the defect, the step of selectively electrically connecting the switching element to the pixel; The step of irradiating the laser with the defective pixel to at least degrade the first alignment film or the second alignment film. In the method of manufacturing a liquid crystal display device according to the first aspect of the invention, the method of the present invention is characterized in that the step of modifying the first alignment film or the second alignment film is performed. After the step of selectively electrically connecting a switching element to the pixel, the defect is performed on the unrepaired pixel. -7- 1290647 (5) The third aspect of the invention is the method of manufacturing a liquid crystal display device according to the first or second aspect of the invention, characterized in that the laser light is in the switching element The step of selectively electrically connecting the pixel has a pulse width of 20 n S to 2 0 0 ns, and has a frequency of at least 10 ns when the first alignment film or the second alignment film is at least deteriorated. Pulse width. A method of manufacturing a liquid crystal display device according to the fourth aspect of the present invention, comprising: forming at least a first electrode and a first alignment film on a first substrate; and forming at least a second electrode on the second substrate And the step of aligning the second alignment film with the liquid crystal between the first substrate and the second substrate, and sealing the substrates against each other, and the first electrode and the second electrode a step of causing a potential difference to display a screen, and irradiating the laser with a pixel having a defect portion among the pixels constituting the screen detected by the detection, and at least the first alignment film or the second The step of modifying the alignment film to repair the pixel in which the defect occurs, wherein the repairing step comprises: illuminating the pulsed laser light having a smaller illumination surface than the pixel size into a plurality of pixels for generating the defect The irradiation surface is separated from each other and the alignment film of the irradiation surface is substantially eliminated by the irradiation step, and the alignment film located at the peripheral portion of the irradiation surface has the laser light -8- 1290647 (6) The energy is such that the spatter is deposited in a corrugated manner around the irradiation surface, and the spatter is deposited in a corrugated shape and disappears, so that the pixel-transmitting transmittance of the defect occurs. Or a step of decreasing the reflectance before the laser light is irradiated. A liquid crystal display device according to claim 5, wherein the first substrate has at least a first electrode and a first alignment film, and at least a second electrode and a second alignment film are formed on the second substrate. And a liquid crystal sealed between the first substrate and the second substrate, and arranged in a specific direction according to the alignment imparted to the first alignment film and the second alignment film; and a plurality of pixels, A liquid crystal display device capable of changing a transmittance of a liquid crystal to light or a reflectance in accordance with a potential difference generated by a voltage applied between the first electrode and the second electrode; characterized in that: The pixels have at least two switching elements respectively disposed corresponding to each of the pixels corresponding to the pixels, and at least one of the plurality of pixels is capable of being irradiated by laser light. The first alignment film or the portion of the second alignment film that is at least deteriorated. The liquid crystal display device of claim 6, comprising: a first substrate having at least a first electrode and a first alignment film; and a second substrate having at least a second electrode and a second alignment film; And the liquid crystal is sealed between the first substrate and the second substrate, and is arranged in a specific direction according to the alignment of the first alignment film and the second alignment film to which the -9-12890647 (7) is applied. And a plurality of pixels, which can correspond to a potential difference generated by a voltage applied between the first electrode and the second electrode, and a liquid crystal whose transmittance or reflectance changes depending on the alignment property. Display device; / characterized in that: 1 pulsed laser light having a smaller illumination surface than the size of the pixels is irradiated such that a plurality of the illumination surfaces are separated from each other, and at least two alignment films of the illumination surface are substantially disappeared The portion and the φ correspond to the alignment film of the peripheral portion of the irradiation surface, and the portion of the irradiation surface is a corrugated portion by the energy accumulation spatter of the laser light. The laser repairing device of the present invention comprises: a laser light source for illuminating the alignment film constituting the liquid crystal panel; and a laser light control device for adjusting a pulse of the laser light emitted from the laser light source a width; a φ mounting table provided with the liquid crystal panel; and a scanning device for performing relative scanning of the laser light; wherein: the laser light control device is configured to excite the laser light source The pulse width is adjusted by the adjustment of the input energy. Another laser repairing device of the present invention has: a laser light source for illuminating an alignment film constituting a liquid crystal panel with laser -10- 1290647 (8) light; and a laser light control device for adjusting the laser light from the laser a pulse width of the laser light emitted from the light source; a mounting table provided with the liquid crystal panel; and a scanning device capable of performing relative scanning of the laser light on the liquid crystal panel; wherein the laser light control device is The ON/OFF adjustment of the Q switch constituting the laser light source is adjusted to adjust the pulse width. According to these inventions, it is possible to actively utilize the related mechanism of the defective pixel repair, and it is possible to suppress defects corresponding to the defects caused by the TFT or the wiring being not normally formed or the foreign matter caught between the array substrate and the opposite substrate, and it is possible to suppress the defect corresponding to the defect. Ion accumulation on the electrodes of the pixels. As a result, a liquid crystal display device having excellent display characteristics can be obtained. [Embodiment] Referring to the simplified embodiment of the first embodiment of the present invention, a liquid crystal display device (diagonally 5 inches) of a normally white mode and a passive matrix type will be described as an example. According to the present invention, the present invention is also applicable to a reflection type liquid crystal display device of a normally black mode. Fig. 1 is a cross-sectional view showing a pixel portion of the embodiment, and Fig. 2 is a top view showing the pixel portion. According to Fig. 1, the cross section of the Y-Y' line of Fig. 2 is shown. The liquid crystal display device 1, the array substrate 2 -11 - 1290647 Ο) (an example of a first substrate), and the counter substrate 3 (an example of a second substrate) are each a first alignment film formed of a polyimide. 4 and the second alignment film 5 are provided with a spacer (not shown) as a support, and are kept in a state of a twisted nematic liquid crystal composition (hereinafter simply referred to as liquid crystal) 6, and sealed with a sealant (not shown). The liquid crystal 6 is twisted between the array substrate 2 and the opposite substrate 3 by a molecular weight of 90 °. Further, the first polarizing plate 7 and the second polarizing plate 8 are provided on the array substrate 2 and the counter substrate 3, respectively, and the polarization axes thereof are orthogonal to each other (cross Nicol state). Posted. According to the charging of the liquid crystal 6, the liquid crystal can be dropped on the substrate 2 or the opposite substrate 3 before the sealing of the sealing agent, and then the array substrate 2 and the opposite substrate 3 are pasted, and the sealing agent can also be used. After the sealing, the liquid crystal 6 is injected from the injection port of the sealant or vacuum suction is applied to the sealed space portion of the array substrate and the counter substrate formed by the sealing. In the array substrate 2, there are 6 4 0 X 3 signal lines (also called source electrode lines) on the transparent glass substrate 9 and 10 (0) scanning lines (also called gate electrode lines) 1 1 Formed to form approximately orthogonal. In the vicinity of the intersection of the respective signal lines 10 and the scanning line 1 1 , the pixel electrodes 13 are disposed via the TFTs 1 2 respectively belonging to the switching elements. According to this, the pixel electrode 13 is formed along the side of the signal line 10 to form 80#m, and is formed along the side of the scanning line 1 1 to be 60 // m. The pixel electrodes 1 3 are arranged in a vertical and horizontal arrangement at a pitch of 1 0 0 // m to form a display surface of the liquid crystal display device. In the third diagram, as shown in the schematic configuration of the LCD unit, although the scanning line and the signal line are controlled, they are respectively driven by the gate driver and the source driver 12-1290647 (10). Not shown in detail, but usually the module that connects the drivers to the outside of the display surface). Each of the drivers inputs the image signal from the signal control unit and the power of the sync signal and the power source. The gate driver is used for one frame (60 Hz) once, and has a digital circuit for selecting each scanning line function, and operates during the scanning time (1 5 to 4 0 // s). The source driver is a pixel electrode 13 (an example of a first electrode) formed of a transparent anisotropic conductive film (hereinafter referred to as an IT (Indium Tin Oxide) film) formed on the array substrate 2, and The liquid crystal 6 charged between the counter electrode (an example of the second electrode) formed by forming the IT film on the counter substrate 3 is operated to cause a potential difference. Specifically, a circuit for applying a voltage corresponding to image information via T F T 1 2 is formed by applying a voltage to the scan line. At this time, if the liquid crystal 6 continues to apply DC power, the display is deteriorated. Therefore, alternating current power is applied to the counter electrode, and voltages of opposite polarities are alternately applied. This is called an inverting drive, and its source driver operates at a high frequency of 20 to 100 (Hz). According to the TFT 1 2, although the scanning line 1 1 itself is used as the source electrode, on the glass substrate 9, first, first, S i 〇 X, S 1 NX or more, TE 〇 S (Tetra Ethyl Ortho Silicate: Si) 0C2 H5 4 ), an undercoat (insulating film) 14 and an amorphous germanium (a - S i : Η ) film belonging to an amorphous semiconductor film containing hydrogen (the above is only called Semiconductor-13- 1290647 (11) Membrane) 1 5 were sequentially laminated to form a film. According to this, as a film forming apparatus, C V D (Chemical Vapor Deposition) is usually used. On this semiconductor film 15, a channel protective film 16 formed by self-integration using 3 i NX is disposed on the scanning line 1 1 . Further, the semiconductor film 15 is electrically connected to the respective pixel electrodes 13 via the η + type a -S i : Η film disposed as the low resistance semiconductor film 17 and the source electrode 18. Further, the semiconductor film 15 is electrically connected to the signal line 10 via the drain electrode 19 which is extended from the n + -type a - Si : germanium film (low resistance semiconductor film) 17 and the signal line 10 . Further, the scanning line 1 1 is formed to be approximately parallel, and has a complementary capacitance line 20 disposed in a field overlapping with the pixel electrode 13 and 'represents a supplementary capacitance from the pixel electrode 13 and the auxiliary capacitance line 20 ( C s ). According to the above, the auxiliary capacitor line 20 is made to have approximately the same potential as the counter substrate 3. On the opposite substrate 3, on the transparent glass substrate 9, between the TFT 1 2 on the array substrate 2 and the gap between the signal line 10 and the pixel electrode 13, or between the scanning line 11 and the pixel electrode 13 The gaps are respectively shielded from light to form a light shielding layer 2 1 (BM: Black Matrix) having C r (chromium) and C r 叠层 laminated in a matrix. These structures are formed by the EP (Photo Engaving Process) step. According to the pattern of the light-shielding layer 2 1 in a matrix shape, in order to realize the color display on the display surface, the color filters composed of the three primary colors of red (R), green (G), and blue (B) are respectively provided with color. The portion 2 2 'and' has a counter electrode 24 formed of a transparent IT ruthenium film via the organic protective film 2 3 . The operation of the liquid crystal display device 1 of such a normally white mode is as follows with reference to Fig. 4 -14 - 1290647 (12). According to the TN mode, the TN mode is used as an example. However, since the alignment film and the liquid crystal molecules are used in the same manner, the nematic liquid crystal composition or the Chiral nematic type is used. The liquid crystal composition or the addition of the Chiral compound's STN mode (Super Twisted Nematic Mode), DSTN mode (Double Super Twisted Nematic Mode), TSTN mode (Triple Super Twisted Nematic Mode) and FSTN mode (Film Super) It is a matter of course that the present invention can also be applied to a ferroelectic liquid crystal (FLC) mode composed of a liquid crystal composition of a Chiral Smetic type. The liquid crystal molecules constituting the liquid crystal 6 are arranged in a certain direction when an electric field is applied because of their respective polarities. The display of the liquid crystal screen utilizes this property. First, as shown in Fig. 4(a), the potential difference between the pixel electrode 13 and the counter electrode 24 is the threshold voltage from the alignment of the liquid crystal 6 to 0 (V). The plate 7 is made to be linearly polarized, and the polarization axis is rotated by 90° through the second polarizing plate 8 approximately along the alignment direction of the liquid crystal molecules constituting the liquid crystal 6. As a result, the incident light is emitted from the display screen of the liquid crystal display device 1, and a white (bright) pixel is displayed. In this case, the first polarizing plate 7 and the second polarizing plate 8 are disposed at the crossed Nicot position. On the other hand, as shown in Fig. 4(b), the potential difference between the pixel electrode 13 and the counter electrode 24 is generated, and if the threshold voltage of the liquid crystal 6 is relatively high, the threshold voltage is -15 - 1290647 (13). Since the liquid crystal molecules are arranged along the electric field, the incident angle is linearly polarized by the first polarizing plate 7, and the liquid crystal 6 is intended to pass therethrough. However, the linear polarized light of the liquid crystal 6 does not pass through the second polarizing plate 8 because the second polarizing plate 8 passes through the incident light as a polarizing axis having an offset of 90°. As a result, the incident light is not emitted from the display screen of the liquid crystal display device 1, and a black (dark) pixel is displayed. This is because the first polarizing plate 7 and the second polarizing plate 8 are arranged in parallel Nikon position. The above is a description of the normally white mode, but in the case of the normal black mode, only the display of white pixels and black pixels is replaced, and the effect itself does not change. Above the threshold 値 voltage above, only the color of the display pixel is replaced due to the difference in modality. Next, in the normally white mode liquid crystal display device 1, the conductive foreign matter between the pixel electrode 13 and the counter electrode 24 is incorporated into the pixel electrode 13 and the counter electrode 2 through a manufacturing process. 4, the factor of the same potential, or the pixel electrode 13 and the auxiliary capacitor line 20 are the insulation failure of the insulating film 14, and the short-circuited pixel electrode 13 is the auxiliary capacitance line 2 which is approximately equal to the potential of the counter electrode 24. Since 0 is approximately the same potential factor, the potential difference between the pixel electrode 13 and the counter electrode 24 is approximately 0 (V). In this case, the transmittance on the display screen of the liquid crystal display device 1 is often high, and a bright spot defect occurs. In the present embodiment, the pixel in which a bright spot defect occurs is detected as follows. First, for the signal line 10 of the liquid crystal display device 1, a predetermined voltage is applied as a center, and a polarity is applied to a signal voltage (Vsig) of +5 (V) and a 5 (V) according to each frame time, and The counter electrode 2 4 applies a bias voltage (Vcom) of 5 (V) to -1690647 (14) and applies a voltage of 5 (V) to the auxiliary capacitor line 20'. Scan voltage (Vg) to display black (dark). Then, the display brightness of any one of the display pixels located at the periphery and the center of the display screen is detected, and the average value is stored as "black level of the reference". Thereafter, the display screen is sequentially scanned, and a large pixel whose luminance is displayed at the black level of 30% or more is detected, and its position is memorized. The pixel corresponding to this position is treated as a pixel with a bright spot defect. As described above, the method of detecting the occurrence of a bright spot defect by the irradiation of the laser light is explained as follows. First, as shown in Fig. 5, the laser repairing device 25 for performing this correction is shown. The laser oscillator 26 uses a semiconductor laser (Laser Diode: hereinafter referred to as LD) (not shown) for AO (acoursto-optic)-Q switching operation of Nd:YAG laser (Neodymium.- Yttrium Aluminium Garnet Laser). According to the use of the objective lens for the optical microscope for general use, the laser lens from the laser oscillator 26 can be used as a basic Nd:YAG laser or Nd:YLF laser. The wave, the second higher harmonic, and 'the third higher harmonic and the fourth higher harmonic of the ultraviolet light can be used again. Also, 'L D can be replaced with a sputum or a lone light. The laser repairing device 25 can also change the pulse width of the laser light (the inverse of the "repetitive frequency x 2 ") in accordance with the repair method described at the end of the present specification. Generally, the solid laser system in the A 0 - Q switching action is when the length of the laser resonator (the distance between the resonant mirrors constituting one of the laser oscillators 26) is constant due to the excitation input (application to the LD). Power • 17-1290647 (15) Size) and the energy loss inside the laser resonator causes a change in pulse width. That is, if the excitation input becomes small or the energy loss inside the laser resonator becomes large, the pulse width becomes large, and the energy/loss inside the laser resonator changes with the time when the laser light is emitted. A〇-Q switch's application 'plus power to control. If the power applied to the A〇-Q switch is not controlled, it can be controlled by changing the magnitude of the applied power to L D . According to these, the adjustment of the power size is adjusted by the supply electric force φ from the laser light source 28. Here, the case where the magnitude of the applied power of L D is specifically changed is shown as an example. The relationship between the applied current of the LD and the pulse width of the laser light when the applied voltage is constant (usually about 2 to 3 (V) or so) is the repetition frequency of the laser light when the applied current is changed as 1 (kHz) or less (in dotted line) The relationship between the applied current and the energy of the laser light (indicated by the solid line) is shown in Fig. 6. In this graph, since the applied current to L D is equivalent to the excitation input, the pulse width becomes longer as the applied current becomes smaller for L D , and the energy of the laser light becomes smaller. That is, when the length of the laser oscillator is constant, the pulse width depending on the excitation input laser light changes. However, the energy of the laser light also changes when the pulse width is changed by this method. Therefore, in order to repair the defective pixel with the optimum energy, the laser repair device 25 is equipped with variable light attenuation. Variable
attenuate!*) 2 9較佳。藉倂用調節此可變光衰減器 2 9 ，與調節對於L D之施加電力之大小或對於A〇一 Q -18- 1290647 (16) 開關之施 可使用1 關於 經過可變 置具有缺 之液晶面 描裝置之 鏡3 3、 鏡2 7、 在 X Y IS 外，還具 力、與供 閉、與可 之控制器 茲關 如下。按 之透過率 板2之背 之透過率 %以下。 電容線2 位差約略 上述閾値 2 4之間 加電力之大小，在最佳能量之缺陷畫素之修復爲 台雷射振盪器就可容易進行。 其他之雷射修復裝置2 5之構成’係具有：進行 光衰減器29之ON/ OFF之擋門30、與載 陷畫素之液晶面板（未完成外裝之液晶顯示裝置 板）3 1使雷射光與液晶面板3 1相對地進行掃 一之XY段3 2、與在XY段3 2引導雷射光之 與對於缺陷畫素聚光照射雷射光之加工用物鏡透 攝像缺陷畫素修復狀況之照相機3 4、與透過設 3 2之照明於液晶面板3 1之燈3 6 。除此之 有控制··從雷射光源2 8供給於L D之施加電 給於A〇一 Q開關之施加電力、與擋門3 0之開 變光衰減器2 9之光衰減率、與X Y段3 2動作 3 7° 於以雷射修復裝置2 5進行之缺陷修復情形說明 ，在此所謂「缺陷畫素之修復」，將到此所說明 作爲基準時，指將6 5 0 ( 1 X )配置於陣列基 面照射，將以下說明具有最苛酷亮點缺陷之畫素 視爲1 0 0 %時，以雷射光之處理後減少到2 0 例如，最苛酷之亮點缺陷係畫素電極1 3與補助 0變成短路，畫素電極1 3與對向電極2 4之電 變成0 ( V )之情形。於此時，較關於液晶6之 電壓更高電壓差施加於畫素電極13與對向電極 時’也與正常之畫素電極同樣地具有大約1 〇 〇 -19· 1290647 (17) %之透過率。 按，如第7圖所示，於此雷射光係從第2配向膜5射 入，進行照射使其在液晶6中連結聚光點較佳。所以不在 陣列基板2或對向基板3上位有聚光點，係爲了防止對於 畫素電極1 3或對向電極2 4本身或第1配向膜4或第2 配向膜5射入強烈能量而給與損傷所致。又，當然，也可 以從第1配向膜4同樣射入雷射光。 從雷射振盪器2 6射出之（N d : Y A G )雷射光， 係於波長1 · 0 6 ( // m )，缺陷畫素上之雷射點（laser spot)之直徑（雷射光之照射面直徑）爲以2 · 5 ( m )狀態照射。此際，反復頻率爲在1 0 0 ( Η z )於 缺陷畫素之掃描速度係成爲1 ( m m / s )，並且，所照 射之雷射光之輸出係成爲2 (//J/pulse)。於此掃描之雷 射光與缺陷畫素之位置關係之槪略係變成如第8圖所示， 雷射光將在缺陷畫素之內部縱橫折返進行掃描。 更詳細則如第9圖所示。沿著掃描線1 1之長向，將 從發生缺陷之畫素電極1 3 —端部（例如該圖中之a地 點）到另端部（例如該圖中之b地點）並行掃描畫素電極 1 3端邊，在另端部將掃描方向向該圖之上方折返（例如 到該圖中之c地點）依序進行掃描。於此，屬於掃描開始 地點之上述一端部（a地點），係以遮光層2 1所定之開 口部（光透過部）端部之距離L ，爲至少離開7 V m較 佳。若此距離L太小時，由後述雷射光所發生之飛濺物， 也飛濺到正常顯示之畫素電極1 3 ，恐有發生新的顯示不 -20- 1290647 (18) 良之虞。 茲說明將第9圖之放大圖以第1 〇圖所示之雷射光照 射之特徵如下。第1 0 ( a )圖係將以前進行之雷射照射 面重疊進行掃描之方法，第1 0 ( b )圖係此次所進行將 雷射照射面以離散性掃描手法，在雷射光之照射面徑相同 作爲前提條件下，來思考輸入能量。按，於第1 1 ( a ) 係表示具有5 0%重疊時之每單位面積之照射面，於第 1 1 ( b )係表示成p / d = 2離散情形以相同每單位面 積之照射面。雙方之圖，形成照射面之單位面積係以虛線 所圍住之部分。 第1 1 ( a )之情形時，因雷射光之照射次數多所以 每一畫素花費3 0秒左右之處理時間。並且，所照射之雷 射光之輸出爲0 · 5 ( // J/pulse )。與此相對，第1 1 (b )之情形時，因雷射光之照射次數少所以每一畫素以 3秒左右之處理時間結束。並且，所照射之雷射光之輸出 係2 ( // J / p u I s e )。比較關於此2種手法之資料時，就可 知照射時間與每1脈衝之積大爲不同。 亦即’第1 1 ( a )之情形時’將變成合計各個照射 面時每單位面積受到8次之照射，所以每單位面積之照射 能量將變成0 · 5x 8 = 4 ( //J/pulse)。與此相對，第 1 1 ( b )之情形時，雖然受到4次之照射，但是，医 P / d = 2之離散性狀態，所以只有斜線部分沒有照射。 因此，將變成每單位面積受到0 · 2 5次之照射，所以， 每單位面積之照射能量將變成2 X 4 X 〇 . 2 5 = ^ ( -21 · 1290647 (19) II J/pulse )。亦即，每單位面積之照射能量之總量變成第 11圖（a)時之1/2。 此結果，每單位面積之照射能量大時爲如第1 1 (b )離散而照射之方法時，曉得照射能量之總量爲少。 除了照射時間少之外，照射能量之總計所以爲少，係考慮 陣列基板2或對向基板3之損傷時爲有效。又’每一 1次 之照射之能量大而照射次數也少，所以可使加工餘裕具有 ± 1 0 %左右。 與此相反，於如第1 1 ( a )圖重疊照射之方法，係 每一 1次之照射能量爲小照射次數也多，所以只可將加工 餘裕變狹爲± 5 %左右。重疊時，每單位面積之照射能量 就變大，依雷射振盪器2 6之輸出變動即使能量些許變 高，彩色部2 2等構造物受到熱能之損傷變成發生新缺陷 之原因。 並且，於此重疊方法，係依照射能量液晶6被加熱液 晶6氣化有時會發生多數之氣泡。有依隨機地發生之氣泡 致使雷射光之照射面之位置或大小起變化，因依此氣泡在 排除液晶6之陣列基板2或對向基板3之表面，因直接給 與雷射光之熱能之損傷會變大，所以變成新缺陷之原因。 原本，第1配向膜與4第2配向膜5係厚度爲經過擦 光處理得到聚亞胺膜’但是於製造步驟此膜厚之偏差度係 被管理在不影響影像之顯示品質之程度（± 1 〇 % )範 圍。於缺陷畫素之修復，起因於此± 1 〇 %之膜厚之偏差 (亦即，干擾）而發生修復良好部位與不良部位，即使以 -22- 1290647 (20) 相同條件處理也出現不能達成充分減少透過率（（修復β 再現性不充分時）之情形。 可容許此干擾之程度關於雷射照射之能量，加工餘辛谷 爲大時，即使以同一條件處理也可得到充分修復再現丨生° 如上述依據本發明以離散照射之方式時，可將加工餘％ $ 爲土 1 0 %，較重疊照射方式可取大的加工餘裕。 實際上，於重疊率5 0 %時之適當修復條件，係胃身寸 點徑爲2 · 5 ( μ m )、掃描速度爲1 ( m m / s ) '反 復頻率爲1 (kHz)、照射能量爲〇 · 50〜0 · 55 (μ J/Pulse )，但是因加工餘裕爲低至+ 5 %，所以缺陷 畫素之修復成功機率爲停於7 0 %。 與此，於P / d = 2時之適當修復條件，雷射點徑爲 2 . 5 ( // m )、掃描速度爲1 (mm/s)、反復頻率 爲1 〇 0 ( k Η z )、照射能量爲1 · 〇〜2 · 0 ( μ J/Pulse )，但是因加工餘裕爲高至± 1 〇 %，所以缺陷 畫素之修復成功機率爲變成1 0 0%。 茲將此離散照射雷射之方法修復缺陷畫素之理由使用 第2圖說明。第1 2 ( a )圖係受到雷射照射之部位之放 大上視圖，第1 2 ( b )係於X — X ’線所視剖面圖。於 第1 2 ( a )圖就可淸楚，將雷射光之照射面3 8作爲中 心，在其周邊部發生波紋狀”混濁”。此”混濁”係於第1習 知例未任何顯示’利用此混濁（於第1習知例未揭示之機 制）進行缺陷畫素之修復爲本發明之特徵。 1 2 ( b )圖就可淸楚，於雷射光之照射面3 8係以 -23- 1290647 (21) 照射能量，第1配向膜4被挖到達I T〇膜所構成之畫素 電極1 3 ，尤其從陣列基板2之側射入雷射光時，也到達 周邊之彩色部2 2而形成第1配向膜4大約消滅之部分。 並且’聚亞胺、I Τ〇或染料之細質固化物或變質之液晶 固化物等所成之飛濺物3 9 ，在雷射光之照射面3 8周圍 ((對應於”混濁”之位置），將如第1 2 ( a )圖所示之 雷射光之照射面3 8爲中心飛濺成波紋狀埋入形成於第1 配向膜4表面之微細擦光溝（未圖示）。藉此，因液晶6 之同調（h 〇 m ο 1 〇 g y )會發生變化，所以微視時形成第1配 向膜4所變質.之部分，而認爲因此發生此混濁。 結果而言，因以飛濺物3 9埋入擦光溝，所以，構成 液晶6之各個液晶分子不能沿著以施加於畫素電極1 3與 對向電極2 4之間之電壓所發生之電場排列。並且，因液 晶6變成不能配向（配向性降低），所以，經由液晶6之 光之通過或反射受到阻礙變成缺陷畫素。 亦即，如以第1 0 ( a )圖所示之重疊方法，除了在 掃描面削去所有配向膜、I T 0膜或彩色部之外，因每1 脈衝之照射能量爲小所以也不形成”混濁”。但是’若依據 此次之方法，迄今也會削掉爲只有雷射光之照射面3 8而 已，因其他領域係以飛濺物3 9阻礙液晶分子之配向，來 實現缺陷畫素之修正（此處係透過率之降低），所以液晶 面板3 1全體之損傷爲少。 又，於此重疊之方法若在8 5 °C之乾燥環境下使其動 作時確認了透過率之上升。對此，於此次之方法透過率幾 -24- 1290647 (22) 乎未變動。此係此次之方法係由飛濺物3 9埋入擦光溝， 認爲即使由雷射照射上升之溫度下降之後也不容易引起配 向之復活。 於第1 3圖，表示P / d與透過率T之關係，於第 1 4圖，表示P / d與照射能量E之關係。也考慮餘裕， 在以斜線所圍住部分雖然各値有變遷，但是依據第1 3圖 時曉得了 P / d爲2〜3時變成最低，也曉得了依第1 4 圖P / d爲2〜3時可使照射能量也變成最大。從這些結 果，曉得了在P / d爲2〜3時以最佳條件下可實現缺陷 畫素之修復。 如上述以離散照射雷射光，利用形成於顯示面之”混 濁”進行缺陷畫素之修復方法，原理上雖然可適用於具有 配向膜之顯示裝置，所以，此方法之適用對象並非限於說 明所舉作爲開關元件使用主動矩陣型之液晶顯示裝置。例 如，也可使用 Μ I M (Metal Insulator Metal)、也可以 使用不使用開關元件之單純矩陣型之液晶顯示裝置。並 且，也可以使用電漿位址型之液晶顯示裝置 (PALC:Plasma Address Liquid Crystal) 〇 又，雖然使用具有亮點缺陷之畫素爲例做了說明，對 於其他缺陷模態本手法也有效。例如，也可適用於因靜電 破壞之開關元件之異常動作或層間絕緣膜之破損引起之電 極或配線之短路，並且畫素電極之脫落或配向異常等。 接著，除了迄今所說明之離散性地照射雷射光以進行 缺陷畫素之修復方法之外，說明另一修復方法如下。本方 -25- 1290647 (23) 法雖然可說是倂具第1習知例與第2習知例之方法，但是 並未揭示各個習知例以互相之方法以補充缺陷畫素之修正 遺漏之思想。按，本方法，係第5圖所示之脈衝寬度爲使 用可變之雷射修復裝置2 5進行較佳。 從第1 5圖到第1 8圖所示方法，與第2習知例相同 對應於1個畫素電極1 3分別設有2個（複數）之T F 丁 (開關元件）。如第1 5圖所示，一方係在畫素電極1 3 以配線機械性且電方式連接之主T F T 4 0，另方係雖然 與畫素電極1 3以機械性連接，但是未以電方式連接（但 是機械性地接觸於從層間絕緣膜4 2所絕緣之掃描線1 1 延出之配線4 3 )之副T F T 4 1 。首先，經過上述畫素 缺陷之檢出，以檢出發生缺陷之畫素。 接著，特定發生畫素缺陷處所時，如第1 6圖所示， 首先，關於因在主TFT4 0之發生動作不良之缺陷畫 素，將連結主T F T 4 0與掃描線1 1之配線4 3將以雷 射修復裝置2 5所使用之雷射光加以切斷。此時之雷射光 之脈衝寬度，係爲了熔化切斷配線設定爲1 〇 ( π s )以 下之短，照射脈衝雷射光加以切斷。 接著，如第1 7圖所示，選擇與畫素電極1 3連接之 副T F 丁 4 1 ，將從主T F T 4 0以層間絕緣膜4 2以電 方式分開之畫素電極1 3與副T F T 4 1照射來自雷射修 復裝置2 5之雷射光選擇性地且以電方式連接。具體上爲 如第1 8圖以第1 7圖之A - A ’線之剖面所示，經由層 間絕緣膜4 2將畫素電極1 3與副T F T 4 1之電極以雷 -26- 1290647 (24) 射光熔化連接。因此，於此雷射光之脈衝寬度爲設定成 1 0 ( n s )之短，以照射脈衝雷射光連接兩者。 藉此處理，關於被修復畫素缺陷者，畫素雖然以正常 動作進行，但是關於並非因T F Τ之動作不良要因之畫素 缺陷就不能修復，也因具有雷射光之加工精度之偏差，所 以只以此方法只能修復畫素缺陷全體之3 0〜5 0 %左 右。 於此，即使進行對於此副T F Τ 4 1之換接之後再檢 查畫素缺陷，假如畫素缺陷還未確認時，例如以如上述所 說明之離散性地照射雷射光之方法，利用如第1習知例所 示配向膜之紊亂進行缺陷畫素之修復者。將這些一系列步 驟於第1 9圖表示流程圖（對於副T F Τ 4 1之換接係對 於冗餘電路換接之一種）。 按，此處理時，於雷射修復裝置2 5所使用之雷射光 之脈衝寬度爲20〜200 (ns)。當然，也可以替代 第1習知例將上述之雷射光以離散性地照射以形成”混濁” 進行缺陷畫素之修復。 又，將作爲開關元件使用T F T之主動矩陣型之液晶 顯示裝置爲例做了說明，但是替代此也可使用Μ I Μ型之 液晶顯示裝置。 [發明之效果] 依據本發明，可達成抑制加於液晶面板之熱性損傷之 缺陷畫素之修正。又，對於將開關元件之動作不良爲首之 -27- 1290647 (25) 各種缺陷模態也可正確地對應之缺陷晝素之修正。亦即， 若依據本發明，可製造達成缺陷畫素進行良好修復之液晶 顯示裝置。又，也可提供一種像這樣供爲修復之雷射修復 裝置。 【圖式簡單說明】 第1圖係表示本發明之液晶顯示裝置。 第2圖係表示本發明之液晶顯示裝置之第1圖中之γ 一 Y ’線之剖面圖。 第3圖係表示本發明之全體液晶顯示裝置之槪略構成 圖。 第4圖係用來說明本發明之液晶顯示裝置之顯示原理 之斜視圖。 第5圖係表示本發明之全體雷射修復裝置之槪略構成 圖。 第6圖係表示本發明之L D之施加電流與雷射光之脈 衝寬度之關係及對於L D之施加電流與雷射光所具之能量 之關係之圖表。 第7圖係表示本發明之液晶顯示裝置之製造方法之雷 射光之照射狀態之剖面圖。 第8圖係表示雷射光之缺陷畫素之位置關係之槪略斜 視圖。 第9圖係表示雷射光之缺陷畫素之位置關係之槪略斜 視圖。 -28- (26) 1290647 第1 0圖（a )係表示使其重疊時之雷射光之各照射 面間之位置關係之上面放大圖，（b )係表示使其離開時 之雷射光之各照射面間之位置關係之上面放大圖。 第1 1圖（a )係表示於第1 〇圖（a )之每單位面 積之上面放大圖，（b)係於第10圖（b)之每單位面 積之上面放大圖。 第1 2圖（a )係依本發明之液晶顯示裝置之製造方 法之受到雷射照射之部位之放大上面圖，（b )係以第 1 2 ( a )之X — X ’線所視之剖面圖。 第13圖係表示P/d與透過率T之關係之圖表。 第1 4圖係表示P / d與照射能量E之關係之圖表。 第1 5圖係表示於本發明之液晶顯示裝置之畫素電極 與主T F T及副T F T之關係之上視圖。 第1 6圖係表示連接第1 5圖之主TFT與畫素電極 之配線爲由雷射光所切斷狀態之上視圖。 第1 7圖係表示連接第1 5圖之副TFT與畫素電極 之配線爲由雷射光所連接狀態之上視圖。 第1 8圖係以第1 8圖之A — A ’線所視之剖面圖。 弟1 9圖係表不％ 1 5圖至第1 7圖之一系列步驟之 流程圖。 [主要元件對照表] 1 液晶顯示裝置 2 陣列基板 -29- 1290647 (27) 3 對 向 基 板 4 第 1 配 向 膜 5 第 2 配 向 膜 6 液 晶 7 第 1 偏 光 板 8 第 2 偏 光 板 9 玻 璃 基 板 1 〇 訊 號 線 1 1 掃 描 線 1 2 丁 F Τ 1 3 畫 素 電 極 1 4 底 塗 層 1 5 非 晶 質 矽 膜 1 6 頻 道 保 護 膜 1 7 η + 型 氫 化 1 8 源 極 電 極 1 9 汲 極 電 極 2 0 補 助 電 容 線 2 1 遮 光 層 2 2 彩 色 部 2 3 有 機 保 護 膜 2 4 對 向 電 極Attenuate!*) 2 9 is better. By adjusting the variable optical attenuator 2 9 , and adjusting the magnitude of the applied power to the LD or for the application of the A 〇 Q -18-1290647 (16) switch, The mirror of the surface scanning device 3 3, the mirror 2 7, in addition to the XY IS, the force, the supply and the closing, and the controller can be closed as follows. According to the transmittance, the transmittance of the back of the board 2 is less than or equal to %. The capacitance line 2 is approximately the same as the above-mentioned threshold 値 2 4 and the power is applied. The repair of the defect pixel at the optimum energy is easy for the laser oscillator. The other laser repairing device 25 has a configuration in which a shutter 30 that performs ON/OFF of the optical attenuator 29 and a liquid crystal panel that has a trapped pixel (a liquid crystal display panel that has not been externally mounted) 3 1 The laser beam is scanned against the liquid crystal panel 31, and the XY segment 3 is scanned, and the laser beam is guided in the XY segment 32, and the processing lens for the defective pixel is irradiated with the laser beam. The camera 3 4 and the lamp 3 6 that illuminates the liquid crystal panel 3 1 through the transmission. In addition, there is control. · The applied electric power supplied from the laser light source 28 to the LD is applied to the power of the A〇-Q switch, and the light attenuation rate of the open-light attenuator 29 of the shutter 30, and XY Section 3 2 Action 3 7° In the case of defect repair by the laser repair device 25, the so-called "repair of defective pixels" will be referred to as 6 0 0 ( 1 X). Configurable on the base surface of the array, the following description of the pixel with the most severe bright spot defects is regarded as 100%, reduced to 2 0 after treatment with laser light. For example, the most demanding bright spot defect is the pixel electrode 1 3 When the subsidy 0 becomes a short circuit, the electric power of the pixel electrode 13 and the counter electrode 24 becomes 0 (V). At this time, when a voltage difference higher than the voltage of the liquid crystal 6 is applied to the pixel electrode 13 and the counter electrode, it also has a transmission of about 1 〇〇-19· 1290647 (17)% as with the normal pixel electrode. rate. According to Fig. 7, the laser light is incident from the second alignment film 5, and is irradiated so that the liquid crystal 6 is connected to the light collecting point. Therefore, there is no condensed spot on the array substrate 2 or the counter substrate 3, in order to prevent strong energy from being incident on the pixel electrode 13 or the counter electrode 24 itself or the first alignment film 4 or the second alignment film 5. Caused by injury. Further, of course, it is also possible to inject laser light from the first alignment film 4 in the same manner. The (N d : YAG ) laser light emitted from the laser oscillator 26 is at a wavelength of 1 · 0 6 ( // m ), the diameter of the laser spot on the defective pixel (the illumination of the laser light) The surface diameter is irradiated in a state of 2 · 5 (m). At this time, the repetition rate is 1 (0) (the scanning speed of the defective pixel is 1 (m m / s), and the output of the irradiated laser light is 2 (//J/pulse). The positional relationship between the laser light and the defective pixel in this scan becomes as shown in Fig. 8, and the laser light is scanned back and forth in the inside and outside of the defective pixel. More details are shown in Figure 9. Along the direction of the scanning line 1 1 , the pixel electrode will be scanned in parallel from the end of the pixel electrode 13 where the defect occurs (for example, the point a in the figure) to the other end (for example, the position b in the figure). 1 3 end edge, at the other end, the scanning direction is folded back above the figure (for example, to the point c in the figure) to scan sequentially. Here, the one end portion (a point) belonging to the scanning start point is preferably a distance L from the end portion of the opening portion (light transmitting portion) defined by the light shielding layer 2 1 so as to be at least 7 V m apart. If the distance L is too small, the spatter generated by the laser light described later also splashes to the pixel electrode 13 which is normally displayed, and a new display may not occur -20- 1290647 (18). It is noted that the magnified image of Fig. 9 is characterized by the laser illumination shown in Fig. 1 as follows. The 10th (a) image is a method of scanning the previously irradiated laser irradiation surface, and the 1st (0)th image is performed by scanning the laser irradiation surface in a discrete scanning manner. Consider the input energy under the premise that the surface diameter is the same. According to Fig. 1 1 ( a ) is an irradiation surface per unit area with 50% overlap, and the first 1 (b) is expressed as p / d = 2 discrete with the same irradiation area per unit area . The map of both sides forms the part of the illuminated surface that is enclosed by the dotted line. In the case of the 1st 1st (a), since the number of times of irradiation of the laser light is large, it takes about 30 seconds for each pixel to be processed. Also, the output of the irradiated laser light is 0 · 5 ( // J/pulse ). On the other hand, in the case of the first 1 (b), since the number of times of irradiation of the laser light is small, each pixel ends with a processing time of about 3 seconds. Also, the output of the irradiated laser light is 2 ( // J / p u I s e ). When comparing the data on these two methods, it is known that the irradiation time is different from the product per pulse. That is, in the case of '1st 1st (a)', it will become 8 times per unit area when the total illumination surface is totaled, so the irradiation energy per unit area will become 0 · 5x 8 = 4 ( //J/pulse ). On the other hand, in the case of the first 1 (b), although it was irradiated four times, the medical P / d = 2 was in a discrete state, so that only the oblique line portion was not irradiated. Therefore, it will become 0. 25 times per unit area, so the irradiation energy per unit area will become 2 X 4 X 〇 . 2 5 = ^ ( -21 · 1290647 (19) II J/pulse ). That is, the total amount of irradiation energy per unit area becomes 1/2 of that in Fig. 11(a). As a result, when the irradiation energy per unit area is large and the method is irradiated as the 1st (1) dispersion, the total amount of the irradiation energy is small. In addition to the small irradiation time, the total amount of irradiation energy is small, which is effective in consideration of damage to the array substrate 2 or the counter substrate 3. Further, the energy per irradiation is large and the number of irradiations is small, so that the processing margin can be about ±10%. On the other hand, in the method of superimposing the irradiation as shown in the above 1 (a), since the irradiation energy per one time is small, the processing allowance is narrowed to about ± 5%. When it overlaps, the irradiation energy per unit area becomes large, and even if the energy of the laser oscillator 26 is slightly increased, the structure such as the color portion 22 is damaged by thermal energy and becomes a new defect. Further, in this superposition method, a large number of bubbles may occur when the liquid crystal 6 is heated by the irradiation liquid crystal 6 by the heating liquid crystal 6. There is a bubble which occurs randomly, which causes the position or size of the irradiation surface of the laser light to change, because the bubble is on the surface of the array substrate 2 or the opposite substrate 3 from which the liquid crystal 6 is excluded, and the thermal energy directly imparted to the laser light is damaged. It will become bigger, so it becomes the cause of new defects. Originally, the thickness of the first alignment film and the 4th alignment film 5 is obtained by polishing to obtain a polyimide film 'but the film thickness deviation in the manufacturing process is managed to a degree that does not affect the display quality of the image (± 1 〇%) range. In the repair of the defective pixel, the repaired part and the defective part occur due to the deviation of the film thickness of ± 1 〇% (that is, interference), even if it is treated under the same conditions of -22-12059647 (20), it cannot be achieved. The transmission rate is sufficiently reduced (when repairing β reproducibility is insufficient). The degree of interference can be tolerated with respect to the energy of laser irradiation. When processing Yu Xingu is large, it can be fully repaired and reproduced even if it is treated under the same conditions. When the above method is used in the form of discrete irradiation according to the present invention, the machining allowance % can be 10% of the soil, and a larger machining allowance can be obtained than the overlapping irradiation mode. Actually, the proper repair condition at the overlap ratio of 50% , the stomach diameter is 2 · 5 ( μ m ), the scanning speed is 1 (mm / s ) 'The repetition frequency is 1 (kHz), and the irradiation energy is 〇· 50~0 · 55 (μ J/Pulse ) However, because the processing margin is as low as + 5 %, the probability of repairing the defective pixel is stopped at 70%. Accordingly, the appropriate repair condition at P / d = 2, the laser spot diameter is 2.5. ( // m ), scan speed 1 (mm/s), repetition frequency 1 〇 0 ( k Η z ), the irradiation energy is 1 · 〇~2 · 0 ( μ J/Pulse ), but the processing margin is as high as ± 1 〇%, so the probability of repairing the defective pixel becomes 100%. The reason for repairing the defective pixel by the method of irradiating the laser is illustrated in Fig. 2. The 1 2 ( a ) image is an enlarged top view of the portion irradiated by the laser, and the 1 2 ( b ) is in the X - X ' line Referring to the cross-sectional view, it can be seen from the first 2 (a) diagram that the illuminating "turbidity" occurs in the peripheral portion with the irradiation surface 38 of the laser light as the center. This "turbidity" is based on the first conventional example. The use of this turbidity (the mechanism not disclosed in the first conventional example) to perform the repair of the defective pixel is not a feature of the present invention. 1 2 (b) The figure can be obscured, and the irradiation surface of the laser light is 3 8 The energy is irradiated by -23- 1290647 (21), and the first alignment film 4 is diced to the pixel electrode 13 formed by the IT film, and when the laser light is incident from the side of the array substrate 2, the color of the periphery is also reached. a portion 2 2 forms a portion where the first alignment film 4 is approximately destroyed. And a fine cured product of polyimine, I ruthenium or dye or deteriorated A spatter object 3 such as a crystal solidified material is placed around the irradiation surface 38 of the laser light ((corresponding to the position of "turbidity"), and the irradiation surface 3 of the laser light as shown in Fig. 1 (a) is used. 8 is a fine polishing groove (not shown) formed on the surface of the first alignment film 4 in a corrugated manner, whereby the homology (h 〇m ο 1 〇gy ) of the liquid crystal 6 changes. When the micro-viewing portion forms part of the deterioration of the first alignment film 4, it is considered that this turbidity occurs. As a result, since the splatter is buried in the polishing groove, the liquid crystal molecules constituting the liquid crystal 6 cannot follow the electric field generated by the voltage applied between the pixel electrode 13 and the counter electrode 24. arrangement. Further, since the liquid crystal 6 becomes unalignable (the alignment is lowered), the passage or reflection of light passing through the liquid crystal 6 is hindered to become a defective pixel. In other words, in the overlap method shown in Fig. 10 ( a ), except that all the alignment films, the IT 0 film, or the color portion are removed on the scanning surface, the irradiation energy per pulse is small, so that it does not form. "turbid". However, according to the method of this time, it has been cut off to only the irradiation surface of the laser light, and the correction of the defective pixel is achieved because the other object is to block the alignment of the liquid crystal molecules by the spatter. Since the transmittance is lowered, the damage of the entire liquid crystal panel 31 is small. Further, when the method of superposition was carried out in a dry environment at 85 ° C, the increase in transmittance was confirmed. In this regard, the transmission rate of this method is -24-1279047 (22) unchanged. This method is buried in the wiper by the spatters 39, and it is considered that even if the temperature rises by the laser irradiation, the resurrection of the alignment is not easily caused. Fig. 13 shows the relationship between P / d and transmittance T, and Fig. 4 shows the relationship between P / d and the irradiation energy E. I also consider Yu Yu. Although there are changes in the area surrounded by the slashes, it is the lowest when P / d is 2 to 3 according to Figure 13. It is also known that P / d is 2 according to Figure 14. When it is ~3, the irradiation energy can also be maximized. From these results, it is known that the defect pixel can be repaired under the optimum conditions when the P / d is 2 to 3. As described above, the laser light is discretely irradiated, and the method of repairing the defective pixel by the "turbidity" formed on the display surface can be applied to a display device having an alignment film in principle. Therefore, the application of the method is not limited to the description. An active matrix type liquid crystal display device is used as the switching element. For example, Μ I M (Metal Insulator Metal) or a simple matrix liquid crystal display device that does not use switching elements can be used. Further, a plasma address type liquid crystal display device (PALC: Plasma Address Liquid Crystal) can also be used. Although a pixel having a bright spot defect is used as an example, it is also effective for other defect mode methods. For example, it can be applied to an abnormal operation of a switching element due to static electricity or a short circuit of an electrode or a wiring due to breakage of an interlayer insulating film, and the pixel electrode is detached or misaligned. Next, in addition to the discrete method of irradiating the laser light to perform the repair method of the defective pixel, the other repairing method will be described as follows. The method of the present invention is not limited to the method of the first conventional example and the second conventional example of the cooking utensils, but it is not disclosed that each of the conventional examples is complementary to the correction of the defective pixel by mutual method. Thought. According to this method, the pulse width shown in Fig. 5 is preferably performed using a variable laser repairing device 25. The method shown in Figs. 15 to 18 is the same as in the second conventional example. Two (complex) T F butyl (switching elements) are provided for each of the pixel electrodes 1 3 . As shown in Fig. 15, one of the main electrodes 40 is electrically and electrically connected to the pixel electrode 13 by a wiring, and the other is mechanically connected to the pixel electrode 13, but is not electrically connected. The sub-TFT 4 1 is connected (but mechanically in contact with the wiring 4 3 extending from the scanning line 1 1 insulated by the interlayer insulating film 4 2 ). First, the above-mentioned pixel defects are detected to detect the pixel in which the defect occurs. Next, when a pixel defect location is specifically generated, as shown in Fig. 16, first, the wiring of the main TFT 40 and the scanning line 1 is connected to the defective pixel due to the malfunction of the main TFT 40. The laser light used by the laser repairing device 25 is cut off. The pulse width of the laser light at this time is set to be shorter than 1 〇 (π s ) for the melt cut wiring, and is irradiated with pulsed laser light to be cut. Next, as shown in Fig. 17, the sub-TF 4 1 connected to the pixel electrode 13 is selected, and the pixel electrode 13 and the sub-TFT which are electrically separated from the main TFT 40 by the interlayer insulating film 4 2 are selected. 4 1 The laser light from the laser repair device 25 is selectively and electrically connected. Specifically, as shown in FIG. 18, the electrode of the pixel electrode 13 and the sub-TFT 4 1 is passed through the interlayer insulating film 42 as shown in the cross section of the A-A' line of FIG. 24) The light is melted and connected. Therefore, the pulse width of the laser light is set to be shorter than 10 (n s ) to illuminate both of the pulsed laser light. According to this processing, although the pixel is repaired in the normal operation, the pixel defect cannot be repaired due to the malfunction of the TF, and the processing precision of the laser light is deviated. Only this method can only repair about 3 to 50% of the pixel defects. Here, even if the pixel defect is checked after the switching of the sub TF Τ 4 1 , if the pixel defect has not been confirmed, for example, the method of irradiating the laser light discretely as described above is used as the first The disorder of the alignment film shown in the conventional example is to repair the defective pixel. These series of steps are shown in Figure 19 as a flow chart (for the replacement of the secondary T F Τ 4 1 for one of the redundant circuit switching). According to this processing, the pulse width of the laser light used in the laser repairing device 25 is 20 to 200 (ns). Of course, instead of the first conventional example, the above-described laser light may be discretely irradiated to form "turbidity" to repair the defective pixel. Further, an active matrix type liquid crystal display device using TF T as a switching element has been described as an example, but a liquid crystal display device of the Μ I Μ type may be used instead. [Effects of the Invention] According to the present invention, it is possible to achieve a correction of a defective pixel that suppresses thermal damage applied to a liquid crystal panel. In addition, for the failure of the switching element, the -27-1290647 (25) various defect modes can also correctly correct the defects. That is, according to the present invention, it is possible to manufacture a liquid crystal display device which achieves a good repair of defective pixels. Further, a laser repairing device for repairing like this can be provided. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a liquid crystal display device of the present invention. Fig. 2 is a cross-sectional view showing the γ-Y' line in Fig. 1 of the liquid crystal display device of the present invention. Fig. 3 is a schematic block diagram showing the entire liquid crystal display device of the present invention. Fig. 4 is a perspective view for explaining the display principle of the liquid crystal display device of the present invention. Fig. 5 is a schematic block diagram showing the entire laser repairing apparatus of the present invention. Fig. 6 is a graph showing the relationship between the applied current of L D of the present invention and the pulse width of the laser light, and the relationship between the applied current of L D and the energy of the laser light. Fig. 7 is a cross-sectional view showing the state of irradiation of the laser light in the method of manufacturing the liquid crystal display device of the present invention. Fig. 8 is a schematic oblique view showing the positional relationship of the defective pixels of the laser light. Fig. 9 is a schematic oblique view showing the positional relationship of the defective pixels of the laser light. -28- (26) 1290647 Fig. 10 (a) shows an enlarged view of the positional relationship between the respective irradiation surfaces of the laser light when superimposed, and (b) shows the laser light when it is separated. An enlarged view of the positional relationship between the illuminated surfaces. Fig. 1(a) is an enlarged view of the upper surface per unit area of Fig. 1(a), and Fig. 1(b) is an enlarged view of the upper surface per unit area of Fig. 10(b). Fig. 1(a) is an enlarged top view of a portion irradiated with laser light according to a method of manufacturing a liquid crystal display device of the present invention, and (b) is viewed as a line X-X' of the 1 2 (a) Sectional view. Figure 13 is a graph showing the relationship between P/d and transmittance T. Fig. 14 is a graph showing the relationship between P / d and the irradiation energy E. Fig. 15 is a top view showing the relationship between the pixel electrodes of the liquid crystal display device of the present invention and the main T F T and the sub-T F T . Fig. 16 is a top view showing a state in which the wiring connecting the main TFT and the pixel electrode of Fig. 5 is cut by laser light. Fig. 17 is a top view showing a state in which the wiring connecting the sub TFT and the pixel electrode of Fig. 15 is connected by laser light. Figure 18 is a cross-sectional view taken along line A - A' of Figure 18. Brother 1 9 shows the flow chart of the series of steps from 1 to 5 of Figure 17. [Main component comparison table] 1 Liquid crystal display device 2 Array substrate -29 - 1290647 (27) 3 Counter substrate 4 First alignment film 5 Second alignment film 6 Liquid crystal 7 First polarizing plate 8 Second polarizing plate 9 Glass substrate 1 〇 signal line 1 1 scan line 1 2 butyl F Τ 1 3 pixel electrode 1 4 undercoat layer 1 5 amorphous enamel film 1 6 channel protection film 1 7 η + type hydrogenation 1 8 source electrode 1 9 汲 electrode 2 0 auxiliary capacitor line 2 1 light shielding layer 2 2 color portion 2 3 organic protective film 2 4 counter electrode
雷射修復裝置 雷射振盪器 -30- 加工用物鏡透鏡 雷射光源 可變光衰減器 擋門 液晶面板 X Y段 鏡 照相機 開口部 燈 控制器 照射面 飛濺物 主T F 丁 副T F 丁 層間絕緣膜 配線 -31 -Laser repair device laser oscillator-30- processing objective lens laser light source variable optical attenuator door LCD panel XY segment mirror camera opening lamp controller irradiation surface splash main TF Ding TF butyl interlayer insulation film wiring -31 -