200426446 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於藉照射雷射光，修復顯示畫面之不良部 分（缺陷畫素）所得到之液晶顯示裝置之製造方法與液晶 顯示裝置，及使用於這些液晶顯示裝置製造方法之雷射修 復裝置。 【先前技術】 近年，作爲使用於個人電腦或文書處理機等之顯示裝 置傾向使用許多消費電力少而薄型且輕量之液晶顯示裝置 (LCD:Liquid Crystal Dislpay)。尤其其中作爲一例，將以 非晶質（amorphous )矽（a-Si)膜，薄膜電晶體（TFT:Thin Film Transistor )對應於畫素作爲開關元件使用之主動矩陣型 液晶顯示裝置，即使以多畫素構成其對比或響應之劣化 少’並且因也可中間色顯示作爲全彩色電視或〇 A機器用 之顯示裝置使用。 然而’此T F T係形成於陣列基板，對於構成畫素之 畫素電極充電·放電電荷使其在陣列基板與對向基板之間 發生電位差’爲了顯示畫素調整其液晶分子之排列。於近 年’隨著液晶顯示裝置顯示部分之大畫面化或高精彩化， 畫素數已變成超過數1 〇萬〜1 〇 〇萬。亦即，不使這些 畫素發生缺陷加以顯示進行製造爲非常困難之事，由於某 種原因致使不能將T F 丁正常地驅動，不能正常地形成畫 素電極’或’在陣列基板與對向基板之間挾住異物對於畫 -4- (2) (2)200426446 素電極不能施加正確電壓之不妥情形致使發生缺陷畫素， 具有不能顯示正常畫面之問題。 爲了修復這種缺陷畫素，使用雷射光加工配向膜以減 低畫素透過率或反射率之方法修復消除缺陷之方法，爲例 如揭示於例如日本專利特開昭6 0 - 2 4 3 6 3 5號公 報、日本專利特開平5 - 2 9 7 3 8 7號公報、日本專利 特開平5 - 3 1 3 1 6 7號公報、日本專利特開平7 — 225381號公報、曰本專利特開平8—15660號 公報、日本專利特開平9 — 2 5 8 1 5 5號公報等（將這 些方法總稱第1習知例）。 並且，裝設救濟T F T動作之冗餘電路（預備配線） 施加直流電壓以修復缺陷畫素之方法，例如揭示於日本專 利特開昭6 3 - 1 3 6 0 7 6號公報、日本專利特開平2 一3023號公報、日本專利特開平9一80470號公 報、日本專利特開平1 〇 — 1 〇 4 6 4 8號公報、日本專 利特開平1 0 — 2 3 2 4 1 2號公報、日本專利特開平 1 0 — 3 1 9 4 3 8號公報等（將這些方法總稱第2習知 例）。並且，爲了修復缺陷畫素使用雷射光將缺陷部位之 閛電極與汲極電極經由半導體層或層間絕緣膜直接連接施 加直流電壓之方法，也例如揭示於日本專利特開平5 - 2 1 0 1 1 1號公報（將此方法稱爲第3習知例）。 【發明內容】 [發明所欲解決之問題] -5- (3) (3)200426446 然而，若依據第1習知例，雖然雷射光之照射本身成 功之機率爲局（9 0%以上）’但是因爲修復缺陷畫素之 機制未被充分揭示，會發生過分給與雷射光能量致使傷及 液晶顯示裝置，更且所修正之畫素無法動作而變成黑（常 白模態（η 〇 r m a 1 w h i t e m 〇 d e )之情形時），有時在缺陷畫 素之光透過率或反射率發生不能通過預先所設定之製品規 格之情形發生。又，若依據第2習知例雖然可確保高顯示 品質，但是因要求細腻作業致使雷射光之照射本身成功之 機率就變低。並且，雖然對於起因於T F T之動作不良之 缺陷畫素之修復有效，但是對於T F T或配線起因於未正 常形成之之缺陷陣列基板與對向基板挾住異物所起因之缺 陷則無效。因其等原因，缺陷畫素之修復成功機率之總計 就變低（30〜50%左右）。 除此之外，若依據第3習知例因施加於畫素電極之直 流電壓，連同液晶分子所存在之離子，就蓄積於對應於缺 陷畫素之畫素電極，導致縮短液晶顯示裝置之壽命。 本發明係依據上述情形所開發者，其目的係藉積極地 利用關於缺陷畫素之修復機制，對於T F T或配線未被正 常形成所起因之缺陷或缺陷基板與對向基板之間挾住異物 所起因之缺陷也可對應，而提供一種達成抑制對於對應於 缺陷畫素之畫素電極之離子蓄積所得到之液晶顯示裝置之 製造方法與液晶顯示裝置，及使用於這些液晶顯示裝置之 製造方法之雷射修復裝置。 -6 - (4) (4)200426446 [解決問題之手段] 本發明申請專利範圍第1項之液晶顯示裝置之製造方 法，其係具有： 在第1基板上至少形成第1電極及第1配向膜之步驟 5 與 在第2基板上至少形成第2電極及第2配向膜之步 驟，與 在該第1基板及該第2基板之間使其具有液晶之狀態 下將這些基板互相使其對向加以密封之步驟，與 在該第1電極與該第2電極之間使其具有電位差以顯 示畫面進行檢查之步驟，與 修復所檢測出之構成該畫面之畫素之缺陷部分之步 驟， 其特徵爲上述修復步驟同時具有：與具缺陷之該畫素 對應地，針對該每一畫素至少有二個分別以機械方式連接 的開關元件，使1個該開關元件選擇性地電連接於該畫素 之步驟；及 對具缺陷之該畫素照射雷射光至少使該第1配向膜或 該第2配向膜變質之步驟。 本發明申請專利範圍第2項，係於申請專利範圍第1 項之液晶顯示裝置之製造方法中，其特徵爲··使上述第1 配向膜或上述第2配向膜變質之步驟，係以進行使一個開 關元件選擇性地電連接於該畫素之步驟後該缺陷乃未被修 復之畫素作爲對象予以進行者。 (5) (5)200426446 本發明申請專利範圍第3項，係於申請專利範圍第1 項或第2項之液晶顯示裝置之製造方法中，其特徵爲：上 述雷射光，在將該開關元件與該畫素選擇性地予以電連接 之步驟時具有2 0 n s至2 0 0 n s之脈衝寬度，在使該 第1配向膜或該第2配向膜至少變質之步驟時具有1 0 n s以下之脈衝寬度。 本發明申請專利範圍第4項之液晶顯示裝置之製造方 法，其係具有： 在第1基板上至少形成第1電極及第1配向膜之步驟 ，與 在第2基板上至少形成第2電極及第2配向膜之步驟 ，與 在該第1基板及該第2基板之間具有液晶之狀態下將 彼等基板互相對向加以密封之步驟，與 在該第1電極與該第2電極之間使其具有電位差以顯 示畫面進行檢測之步驟，與 對該檢測所檢測出之構成該畫面之畫素之中產生缺陷 部分之畫素照射雷射光，至少使該第1配向膜或該第2配 向膜變質，以修復發生該缺陷之畫素的步驟，其特徵爲上 述修復步驟具有：對發生該缺陷之畫素將具有較該畫素尺 寸更小照射面之脈衝狀雷射光照射成多數個該照射面成爲 互相分離開之步驟，與 藉由該照射步驟，使該照射面之配向膜大致消失之同 時’對位於該照射面周邊部之配向膜，藉由該雷射光具有 -8- (6) (6)200426446 之能量使以上述照射面爲中心以波紋狀堆積飛濺物，藉由 堆積成波紋狀之該飛濺物與該之消失，使發生該缺陷之畫 素對光之透過率或反射率較該雷射光照射前降低的步驟。 本發明申請專利範圍第5項之液晶顯示裝置，其係具 有： 第1基板，至少形成有第1電極及第1配向膜；與 第2基板，至少形成有第2電極及第2配向膜；與 液晶’被密封於上述第1基板與上述第2基板之間， 並且’依據被賦予該第1配向膜及該第2配向膜之配 向性而排列成特定方向；與 多數個畫素，其可以對應該第1電極與該第2電極之 間所施加電壓而發生之電位差，依據該配向性使該液晶對 光之透過率或反射率發生變化的液晶顯示裝置； 其特徵爲： 上述多數個畫素，係具有：對應於彼等畫素而依該每 一個畫素分別設置之至少二個開關元件，同時， 上述多數個畫素之中至少一個，係具有藉由雷射光照 射可使該第1配向膜或該第2配向膜至少變質之部分。 本發明申請專利範圍第6項之液晶顯示裝置，其係具 有： 第1基板’至少形成有第1電極及第1配向膜；與 第2基板’至少形成有第2電極及第2配向膜；與 液晶’被密封於上述第1基板與上述第2基板之間， Μ且’依據被賦予該第1配向膜及該第2配向膜之配 -9- (7) (7)200426446 向性而排列成特定方向；與 多數個畫素，其可以對應該第1電極與該第2電極之 間所施加電壓而產生之電位差，依據該配向性使該液晶對 光之透過率或反射率發生變化的液晶顯示裝置； 其特徵爲具有： 具有較彼等畫素之尺寸更小照射面之脈衝狀雷射光被 照射成使多數個該照射面互相分離，至少二個該照射面之 配向膜大略消失之部分，及 和該照射面周邊部之配向膜對應地，以該照射面作爲 中心藉由上述雷射光所具備能量堆積飛濺物而呈現波紋狀 之部分。 本發明之雷射修復裝置，其係具有= 雷射光源，用於對構成液晶面板之配向膜照射雷射 光； 雷射光控制裝置，用來調整從該雷射光源射出之雷射 光所具有之脈衝寬度； 載置台，設置有該液晶面板；及 掃描裝置，可對該液晶面板進行該雷射光之相對掃 描； 其特徵爲= 上述雷射光控制裝置，係藉由爲激發該雷射光源而被 輸入之能量之調整來調整該脈衝寬度。 本發明另一雷射修復裝置，其係具有： 雷射光源，用於對構成液晶面板之配向膜照射雷射 -10- (8) (8)200426446 光； 雷射光控制裝置，用來調整從該雷射光源射出之雷射 光所具有之脈衝寬度； 載置台，設置有該液晶面板；及 掃描裝置’可對該液晶面板進行該雷射光之相對掃 描； 其特徵爲： 上述雷射光控制裝置，係藉由構成該雷射光源之Q開 關之開/關調整用而被輸入之能量之調整來調整上述脈衝 寬度。 依據這些發明，可以積極利用缺陷畫素修復之相關機 制，可以因應T F T或配線未被正常形成所引起之缺陷或 陣列基板與對向基板之間挾住異物所引起之缺陷，可以抑 制對應於缺陷畫素之畫素電極上之離子蓄積。結果，可以 得到顯示特性良好之液晶顯示裝置。 【實施方式】 么么爹照關於本發明之弟1貫Stfi形態之一例加以簡化之 圖式，以常白模態而透過型且主動矩陣型之液晶顯示裝置 (對角5英吋）爲例說明如下。按，本發明也可適用於常 黑模態之反射型之液晶顯示裝置。 第1圖係表示關於本實施形態之畫素部之剖面圖，第 2圖係表示此畫素部之上視圖。按，第1圖係表示第2圖 之"V - \ 線之剖面。於此被晶顯不裝置1 ，陣列基板2 -11 - 200426446 Ο) (第1基板之例）與對向基板3 (第2基板之例），爲分 別經由由聚亞胺所成之第1配向膜4及第2配向膜5 ，將 未圖示之間隔件作爲支柱，以保持扭轉向列型之液晶組成 物（以下只稱液晶）6之狀態，以未圖示之密封劑密封。 此液晶6 ，係在陣列基板2與對向基板3之間如扭轉其分 子9 0 ° 。又，在陣列基板2與對向基板3與外面分別有 第1偏光板7與第2偏光板8，爲其等之偏光軸以互相成 直交之狀態（交叉尼哥爾（cross Ni col )狀態）張貼。 按，液晶6之塡充也可以在以此密封劑之密封前將液 晶滴落於陣列基板2或對向基板3上之後，張貼陣列基板 2與對向基板3 ，也可以由此密封劑之密封後，對於以此 密封所形成之陣列基板與對向基板之密封空間部內，從密 封劑之注入口注入液晶6或進行真空吸引。 在陣列基板2 ，係在透明之玻璃基板9上有6 4 0 X 3條之訊號線（亦稱源極電極線）1 0與4 8 0條之掃描 線（亦稱閘電極線）1 1爲配置成約略直交形成。在各個 訊號線1 〇與掃描線1 1之交點附近，經由分別屬於開關 元件之TFT 1 2配置有畫素電極1 3。按，此畫素電極 1 3係沿著訊號線1 0之邊爲形成8 0 // m，並且，沿著 掃描線1 1之邊形成爲6 0 // m。像這種畫素電極1 3 ， 爲以1 0 0 // m之節距向縱橫排列配置，以形成液晶顯示 裝置之顯示面。 於第3圖如作爲L C D單元之槪略構成所示，雖然控 制掃描線與訊號線，但是，變成分別由閘驅動器與源極驅 -12- (10) (10)200426446 動器所構成之驅動部（雖然未詳細圖示，但是通常爲在顯 示面之外部分別連接驅動器之模組）。在各驅動器分別輸 入來自訊號控制部之影像訊號與同步訊號及電源分之電 力。 閘驅動器，係在1幀（6 0 H z ) 1次，具有選擇各 掃描線機能之數位電路，而在掃描時間（1 5〜4 0 // s )之周期動作。源極驅動器，係由形成於陣列基板2 上之透明之異方性導電膜（以下稱爲I Τ〇（Indium Tin Oxide )膜）所成之畫素電極13 (第1電極之例），與 對於在對向基板3上同樣形成I 丁 0膜所成之對向電極 (第2電極之例）之間所塡充之液晶6使其發生電位差而 動作。 具體上，爲藉對於掃描線施加電壓形成經由T F T 1 2施加因應影像資訊之電壓之電路。此時，對於液晶6 若持續施加直流電力時顯示就會劣化，所以，對於對向電 極施加交流電力，交替地給與相反極性之電壓。將此稱爲 反相驅動，藉其源極驅動器以2 0〜1 〇 〇 ( Η z )之高 頻率動作。 按，T F Τ 1 2雖然將掃描線1 1本身作爲源極電 極，但是在玻璃基板9上，首先第一以S 1〇Χ、 S 1 Ν X 或更且以 Τ Ε 〇 S ( Tetra Ethyl Ortho Silicate·· Si 0C2 H5 4 )等所構成之底塗層 (under coat)(絕緣膜）1 4、與屬於含有氫之非晶質半 導體膜之非晶質矽（a - S i : Η )膜（以上只稱半導體 -13- (11) (11)200426446 膜）1 5依序疊層加以成膜。按，於此，作爲成膜裝置， 通吊係使用 C V D ( Chemical Vapor Deposition)。 在此半導體膜1 5上，在掃描線1 1配置自行整合使 用S 1 N X所形成之頻道保護膜1 6。並且，此半導體膜 1 5係經由作爲低電阻半導體膜1 7所配置之η +型a -S i : Η膜及將源極電極1 8，對於各個畫素電極1 3以 電方式連接。又，半導體膜15經由從η+型a - Si : Η膜（低電阻半導體膜）1 7及訊號線1 0延出之汲極電 極1 9 ，對於訊號線1 0以電方式連接。 又，對於掃描線1 1約略成平行，形成且具有與畫素 電極1 3重複之領域所配置之補助電容線2 0，並且，由 畫素電極1 3與補助電容線2 0形成補助電容（C s )。 按，補助電容線2 0係使其具有與對向基板3約略相同電 位。於對向基板3，在透明玻璃基板9上，於陣列基板2 上之TFT 1 2及訊號線1 0與畫素電極1 3間之空隙， 或掃描線1 1與畫素電極1 3間之間隙分別加以遮光，形 成具有成矩陣狀互相疊層之C r (鉻）與C I*〇所構成之 遮光層2 1 ( BM:Black Matrix)。這些構造係經過 EP(Photo Engaving Process)步驟所形成。 按，於遮光層2 1矩陣狀之各圖案內，爲了實現於顯 示面之彩色顯示，由紅（R)、綠（G)、藍（B)之三 原色所構成之濾色器分別設有彩色部2 2 ，並且’經由有 機保護膜2 3具有由透明I TO膜所成之對向電極2 4 ° 關於這種常白模態之液晶顯示裝置1之動作參照第4圖說 -14- (12) (12)200426446 明如下。 按，本說明書係擬以TN模態（Twisted Nematic Mode )爲例說明，但是，因利用配向膜與液晶分子之動 作毫無兩樣，所以對於向列（nematic )型之液晶組成物 或C h i r a 1 n e m a t i c 型之液晶組成物或添加C h i r a 1化合物 之 STN 模態（Super Twisted Nematic Mode)、DSTN 模態 (Double Super Twisted Nematic Mode) > T S TN 模態（Tri p 1 e Super Twisted Nematic Mode )之外還有 FSTN 模態 (Film Super Twisted Nematic Mode )、並且以 Chiral Smetic 型之液晶組成物所構成之強電介質性液晶 (FLC )模態（Ferroelectic Liquid Crystal Mode)等，當然 也可成爲本發明之對象。 構成液晶6之液晶分子，因具有個個極性所以施加電 場時就向一定方向排列。以液晶畫面之顯示係利用這種性 質。首先，如第4 (a)圖所示，發生於畫素電極13與 對向電極2 4間之電位差，係從液晶6發生配向之閾値電 壓到0 ( V )，射入光係由1偏光板7使其變成直線偏 光，並且，沿著構成液晶6之各個液晶分子之配向方向約 略將偏光軸邊旋光9 0 °通過第2偏光板8。其結果，射 入光射出於液晶顯示裝置1之顯示畫面而將顯示白（明 亮）畫素。此係，因第1偏光板7與第2偏光板8配置於 交叉尼哥爾位置所致。 對此，如第4 (b)圖所示，發生於畫素電極13與 對向電極2 4間之電位差，若液晶6較容易發生之閾値電 -15- (13) (13)200426446 壓爲大時，因各個液晶分子係沿者電場排列，射入角係由 第1偏光板7變成直線偏光，並且，欲將液晶6使其照樣 通過。但是，通過液晶6之直線偏光，因第2偏光板8透 過射入光爲具偏移9 0 °之偏光軸，所以不能通過第2偏 光板8。其結果，射入光不射出於液晶顯示裝置1之顯示 畫面而將顯示黑（暗）畫素。此係因第1偏光板7與第2 偏光板8配置成平行尼哥爾位置所致。 上述係常白模態之說明，但是常黑模態時，只有白畫 素與黑畫素之顯示更替而已，作用本身並無改變。在上述 之閾値電壓之上下，因模態之差異只有顯示畫素之顏色更 替而已。 接著，於這種常白模態之液晶顯示裝置1 ，在畫素電 極1 3與對向電極2 4之間導電性異物經過製造步驟之過 程摻入致使畫素電極1 3與對向電極2 4約略變成同電位 之因素、或畫素電極1 3與補助電容線2 0爲因絕緣膜 14之絕緣不良而短路畫素電極13爲與對於對向電極 2 4電位約略相等之補助電容線2 0約略變成同電位之因 素等，所以畫素電極1 3與對向電極2 4間之電位差約略 變成0 ( V )。此情形時，在液晶顯示裝置1之顯示畫面 之透過率經常變高，而發生亮點缺陷。 於本實施形態，將發生亮點缺陷之畫素如下地檢出。 首先’對於液晶顯示裝置1之訊號線1 〇 ，將既定之某電 壓作爲中心依各幀時間施加極性反相爲+ 5 ( V )與一 5 (V )之訊號電壓（Vsig) ’並且，對於對向電極2 4藉 -16· (14) (14)200426446 施加5 ( V )之對向電壓（Vcom )及對於補助電容線 2 0施加5 ( V )電壓，對於各掃描線1 1依序供給脈衝 狀之掃描電壓（V g )，以顯示黑色（暗）。 並且，檢出位於顯不畫面之周邊及中央之任意1 〇〇 個顯示畫素之顯示亮度，將其平均値記憶爲”基準之黑電 平”。其後，依序掃描顯示畫面，檢出對此黑電平所顯示 之亮度爲3 0 %以上之大畫素，而記憶其位置。將對應於 此位置之畫素作爲發生亮點缺陷之畫素加以處理。 像這樣，將所檢出發生亮點缺陷之畫素使用雷射光之 照射修復之方法說明如下。首先，如第5圖表示進行此修 正之雷射修復裝置2 5。雷射振盪器2 6係將未圖示之半 導體雷射 （Laser Diode:以下，稱爲 LD)使用於 ACKacoursto-optic:音響光學）-Q開關動作之Nd:YAG雷射 (Neodymium:Yttrium Aluminium Garnet Laser ) ° 按，作 爲加工用物鏡透鏡2 7因使用具有汎用性之光學顯微鏡用 之物鏡，所以，從此雷射振盪器2 6之雷射光，係可使用 Nd:YAG雷射或Nd:YLF雷射之基本波、第二高 次諧波，並且，再可使用紫外光之第三高次諧波、第四高 次諧波。又，L D也可置換爲氪、孤光燈。 本雷射修復裝置2 5也可對應於本說明書之最後所述 之修復方法成爲可變更雷射光之脈衝寬度（’’反復頻率X 2 ’’之逆數）。一般’於A 0 - Q開關動作之固體雷射係 當雷射諧振器之長度（構成雷射振盪器2 6之一組諧振鏡 間之距離）爲一定時因在激勵輸入（對於L D之施加電力 -17- (15) (15)200426446 大小）及雷射諧振器內部之能量損失引起脈衝寬度之變 化。 亦即，利用若此激勵輸入變小或雷射諧振器內部之能 量損失變大時，脈衝寬度變大，在雷射諧振器內部之能量 損失’以雷射光所射出之時間改變對於A ◦ - Q開關之施 加電力加以控制。若不以對於A〇一 Q開關之施加電力進 行控制時，藉改變對於L D之施加電力之大小就可控制。 按’這些電力大小之調整係以來自雷射光源2 8之供應電 力進行調整。 於此，具體上係改變對於L D之施加電力大小之情形 爲例表示。在施加電壓爲一定（通常爲2〜3 (V)左 右）下雷射光之反復頻率爲作爲1 (kHz)以下改變施 加電流時，對於L D之施加電流與雷射光之脈衝寬度之關 係（以虛線表示）及對於L D之施加電流與雷射光所具能 量之關係（以實線表示）係如第6圖所示。此圖表時，因 對於L D之施加電流爲相當於激勵輸入，所以對於L D之 施加電流愈小時脈衝寬度變愈長，並且，雷射光所具之能 量曉得會變小。亦即，曉得雷射振盪器之長度爲一定時依 存於激勵輸入雷射光之脈衝寬度會發生變化。 但是，於這種方法改變脈衝寬度時雷射光所具能量也 會變化，所以爲了以最佳能量進行缺陷畫素之修復所需於 此雷射修復裝置2 5裝設有可變光衰減器（variable200426446 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a liquid crystal display device and a liquid crystal display device obtained by irradiating laser light to repair a defective portion (defective pixel) of a display screen, and Laser repair device used in these liquid crystal display device manufacturing methods. [Prior Art] In recent years, as a display device used in a personal computer or a word processor, many liquid crystal display devices (LCD: Liquid Crystal Dislpay), which consume less power and are thin and light, have tended to be used. In particular, as an example, an active-matrix liquid crystal display device using an amorphous silicon (a-Si) film and a thin film transistor (TFT: Thin Film Transistor) corresponding to pixels as switching elements is used. The pixels constitute less degradation in contrast or response, and can also be used as a display device for full-color televisions or OA devices because of the intermediate color display. However, "this T F T is formed on the array substrate, and charges and discharges electric charges on the pixel electrodes constituting the pixels to cause a potential difference between the array substrate and the counter substrate" to adjust the alignment of the liquid crystal molecules for the display pixels. In recent years, as the display portion of the liquid crystal display device has become larger or brighter, the number of pixels has become more than one million to one million. That is, it is very difficult to manufacture these pixels without displaying defects in them. For some reason, it is impossible to drive the TFs normally, and the pixel electrodes cannot be formed normally. The problem of holding a foreign object between them is that (4) (2) (2) 200426446 The incorrect situation in which the pixel electrode cannot apply the correct voltage causes a defective pixel to occur, which has the problem that a normal screen cannot be displayed. In order to repair such defective pixels, a method of repairing and eliminating defects using a laser processing alignment film to reduce pixel transmittance or reflectance is disclosed in, for example, Japanese Patent Laid-Open No. Sho 6 0-2 4 3 6 3 5 Japanese Patent Laid-Open No. 5-2 9 7 3 8 7 Japanese Patent Laid-Open No. 5-3 1 3 1 6 7 Japanese Patent Laid-Open No. 7-225381, Japanese Patent Laid-Open No. 8- Publication No. 15660, Japanese Patent Laid-Open Publication No. 9-2 5 8 1 5 5 and the like (these methods are collectively referred to as the first known example). In addition, a redundant circuit (prepared wiring) for relief TFT operation is provided. A method of applying a DC voltage to repair defective pixels is disclosed in, for example, Japanese Patent Laid-Open No. 6 3-1 3 6 0 7 6 and Japanese Patent Laid-Open No. 6 2 Japanese Patent Publication No. 3023, Japanese Patent Application Laid-Open No. 9-80470, Japanese Patent Application Laid-Open No. 10-104, 4-8, Japanese Patent Application Laid-Open No. 10--2 3 2 4 12, Japanese Patent Japanese Patent Application Laid-Open No. 10 — 3 1 9 4 3 8 etc. (these methods are collectively referred to as the second known example). In addition, in order to repair defective pixels, a method in which laser light is used to directly connect a dysprosium electrode and a drain electrode of a defective part via a semiconductor layer or an interlayer insulating film to apply a DC voltage is also disclosed in Japanese Patent Laid-Open No. 5-2 1 0 1 1 Publication No. 1 (this method is referred to as the third conventional example). [Summary of the Invention] [Problems to be Solved by the Invention] -5- (3) (3) 200426446 However, according to the first known example, although the probability of success of laser light irradiation itself is partial (90% or more) ' However, because the mechanism of repairing defective pixels is not fully revealed, excessive laser light energy may be applied to cause damage to the liquid crystal display device, and the modified pixels cannot be operated and become black (normally white mode (η 〇rma 1 whitem 〇)), sometimes the light transmittance or reflectance of defective pixels may not pass the product specifications set in advance. In addition, according to the second conventional example, although high display quality can be ensured, the delicate work requires the laser light irradiation itself to have a low probability of success. In addition, although it is effective for repairing defective pixels caused by poor operation of T F T, it is not effective for defects caused by T F T or wiring due to foreign matter trapping the defective array substrate and the counter substrate due to abnormal formation. For these reasons, the total probability of successful repair of defective pixels becomes low (around 30-50%). In addition, if the DC voltage applied to the pixel electrode and the ions existing in the liquid crystal molecules are accumulated in the pixel electrode corresponding to the defective pixel according to the third conventional example, the life of the liquid crystal display device is shortened. . The present invention was developed based on the above situation, and its purpose is to actively use the repair mechanism for defective pixels to trap foreign objects between defects or defective substrates caused by TFTs or wiring not being formed normally and the opposing substrate. Caused defects can also be dealt with, and a method for manufacturing a liquid crystal display device and a liquid crystal display device that are capable of suppressing the ion accumulation of pixel electrodes corresponding to defective pixels, and a method for manufacturing these liquid crystal display devices are provided. Laser repair device. -6-(4) (4) 200426446 [Means for solving problems] The method for manufacturing a liquid crystal display device according to the first patent application scope of the present invention includes: forming at least a first electrode and a first alignment on a first substrate Step 5 of the film and the step of forming at least a second electrode and a second alignment film on the second substrate, and aligning the substrates with each other in a state where liquid crystal is provided between the first substrate and the second substrate. A step of sealing, a step of making a potential difference between the first electrode and the second electrode to display a screen for inspection, and a step of repairing a defective portion of a pixel constituting the screen detected, which It is characterized in that the above repairing step also has: corresponding to the pixel with the defect, for each pixel there are at least two switching elements mechanically connected respectively, so that one of the switching elements is selectively electrically connected to the pixel A pixel step; and a step of irradiating the defective pixel with laser light to at least deteriorate the first alignment film or the second alignment film. The second item of the patent application scope of the present invention is the method for manufacturing a liquid crystal display device of the first item of the patent application scope, and is characterized by the step of deteriorating the first alignment film or the second alignment film. After the step of selectively electrically connecting a switching element to the pixel, the defect is performed on an unrepaired pixel as an object. (5) (5) 200426446 The third item of the patent application scope of the present invention is the method for manufacturing a liquid crystal display device of the first or second patent application scope, characterized in that the above-mentioned laser light is used in the switching element. The step of selectively electrically connecting with the pixel has a pulse width of 20 ns to 200 ns, and a step of at least deteriorating the first alignment film or the second alignment film has a pulse width of 10 ns or less. Pulse Width. The method for manufacturing a liquid crystal display device according to claim 4 of the present invention includes the steps of forming at least a first electrode and a first alignment film on a first substrate, and forming at least a second electrode on a second substrate, and A step of the second alignment film, a step of sealing the substrates facing each other in a state where there is liquid crystal between the first substrate and the second substrate, and a step between the first electrode and the second electrode The step of making it have a potential difference to display the screen, and irradiating laser light to the pixels that have a defective portion among the pixels constituting the screen detected by the test, at least the first alignment film or the second alignment The step of modifying the film to repair the pixel in which the defect occurs, characterized in that the above-mentioned repairing step includes: irradiating the pulsed laser light having an irradiation surface smaller than the size of the pixel into a plurality of The irradiation surface becomes a step separate from each other, and at the same time that the alignment film of the irradiation surface is substantially disappeared by the irradiation step, the alignment film located at the peripheral portion of the irradiation surface is provided with the laser light. The energy of -8- (6) (6) 200426446 causes the spatter to accumulate in a corrugated shape with the above irradiation surface as the center, and the spatter accumulated in the corrugation and disappears, so that the pixels where the defect occurs are directed to the light. A step of reducing the transmittance or reflectance as compared with that before the laser light irradiation. The liquid crystal display device according to claim 5 of the present invention includes: a first substrate having at least a first electrode and a first alignment film; and a second substrate having at least a second electrode and a second alignment film; And “liquid crystal” are sealed between the first substrate and the second substrate, and are aligned in a specific direction according to the orientation given to the first alignment film and the second alignment film; and a plurality of pixels, which A liquid crystal display device capable of responding to a potential difference caused by a voltage applied between the first electrode and the second electrode and changing the transmittance or reflectance of the liquid crystal to light according to the alignment; the characteristics are: The pixels have: at least two switching elements corresponding to the pixels and each pixel is provided, and at least one of the plurality of pixels is provided by laser light to make the At least a part of the first alignment film or the second alignment film that has deteriorated. The liquid crystal display device according to claim 6 of the present invention, which includes: a first substrate 'at least formed with a first electrode and a first alignment film; and a second substrate' at least formed with a second electrode and a second alignment film; It is sealed with the liquid crystal between the first substrate and the second substrate, and M is based on the orientation given to the first alignment film and the second alignment film. 9- (7) (7) 200426446 Arranged in a specific direction; with many pixels, it can correspond to the potential difference generated by the voltage applied between the first electrode and the second electrode, and change the transmittance or reflectance of the liquid crystal to light according to the alignment The liquid crystal display device is characterized in that: pulsed laser light having an irradiation surface smaller than the size of their pixels is irradiated so that a plurality of the irradiation surfaces are separated from each other, and at least two alignment films of the irradiation surfaces are almost disappeared Corresponding to the alignment film on the periphery of the irradiation surface, the irradiation surface is used as a center, and the wavy shape is formed by accumulating spatters with the energy of the laser light. The laser repairing device of the present invention has: a laser light source for irradiating laser light to the alignment film constituting the liquid crystal panel; a laser light control device for adjusting the pulses of the laser light emitted from the laser light source Width; a mounting table provided with the liquid crystal panel; and a scanning device that can perform a relative scanning of the laser light on the liquid crystal panel; characterized in that the above-mentioned laser light control device is inputted to excite the laser light source The energy is adjusted to adjust the pulse width. Another laser repairing device according to the present invention includes: a laser light source for irradiating the alignment film constituting the liquid crystal panel with laser -10- (8) (8) 200426446 light; a laser light control device for adjusting The pulse width of the laser light emitted by the laser light source; a mounting table provided with the liquid crystal panel; and a scanning device 'can perform a relative scanning of the laser light on the liquid crystal panel; characterized by: the above-mentioned laser light control device, The pulse width is adjusted by adjusting the input energy for the on / off adjustment of the Q switch constituting the laser light source. According to these inventions, the related mechanism of defective pixel repair can be actively used, which can respond to defects caused by TFT or wiring not being formed normally or defects caused by foreign objects trapped between the array substrate and the counter substrate, and can suppress the corresponding defects. Ion accumulation on pixel electrodes. As a result, a liquid crystal display device having good display characteristics can be obtained. [Embodiment] Moda Photo is a simplified diagram of an example of the consistent Stfi form of the younger brother of the present invention, taking a normally white mode transmissive and active matrix type liquid crystal display device (5 inches diagonal) as an example. described as follows. Therefore, the present invention can also be applied to a reflective liquid crystal display device having a normally black mode. Fig. 1 is a cross-sectional view of a pixel portion of this embodiment, and Fig. 2 is a top view of the pixel portion. Press. Figure 1 shows the cross-section of the " V-\ line in Figure 2. Here, the crystal display device 1 is used, the array substrate 2 -11-200426446 〇) (the example of the first substrate) and the counter substrate 3 (the example of the second substrate) are the first through polyimide, respectively. The alignment film 4 and the second alignment film 5 use a spacer (not shown) as a pillar to maintain the state of the twisted nematic liquid crystal composition (hereinafter simply referred to as liquid crystal) 6, and are sealed with a sealant (not shown). This liquid crystal 6 is connected between the array substrate 2 and the counter substrate 3 by twisting its molecule 90 °. In addition, a first polarizing plate 7 and a second polarizing plate 8 are provided on the array substrate 2, the counter substrate 3, and the outside, respectively, so that their polarizing axes are orthogonal to each other (a cross Ni col state). ) Post. Press, the liquid crystal 6 can also drop the liquid crystal on the array substrate 2 or the opposite substrate 3 before sealing with this sealant, and then post the array substrate 2 and the opposite substrate 3, or use the sealant. After the sealing, the liquid crystal 6 is injected into the sealed space portion of the array substrate and the counter substrate formed by the sealing from the injection port of the sealant or vacuum suction is performed. On the array substrate 2, there are 6 4 0 X 3 signal lines (also called source electrode lines) 1 and 4 8 0 scan lines (also called gate electrode lines) on a transparent glass substrate 9 1 1 Formed to be arranged approximately orthogonally. The pixel electrodes 13 are arranged near the intersections of the signal lines 10 and the scanning lines 11 through the TFTs 12 respectively belonging to the switching elements. Press, the pixel electrode 1 3 is formed along the signal line 1 0 to form 8 0 // m, and the pixel electrode 13 is formed along the scanning line 11 to form 6 0 // m. The pixel electrodes 1 3 are arranged vertically and horizontally at a pitch of 100 // m to form a display surface of a liquid crystal display device. In Figure 3, as shown in the schematic configuration of the LCD unit, although the scanning lines and signal lines are controlled, they are driven by a gate driver and a source driver, respectively. 12- (10) (10) 200426446 (Although it is not shown in detail, it is usually a module that connects the driver to the outside of the display surface). Input the image signal and synchronization signal from the signal control unit and the power of the power supply to each driver. The gate driver is a digital circuit which is selected once per frame (60 Hz). It has a digital circuit that selects the function of each scanning line, and operates at a period of scanning time (15 ~ 4 0 // s). The source driver is a pixel electrode 13 (an example of a first electrode) made of a transparent anisotropic conductive film (hereinafter referred to as an I TO (Indium Tin Oxide) film) formed on the array substrate 2 and The liquid crystal 6 filled between the counter electrodes (example of the second electrode) formed by forming the I but 0 film on the counter substrate 3 similarly causes a potential difference to occur and operates. Specifically, a circuit for applying a voltage corresponding to image information via T F T 1 2 is formed by applying a voltage to a scanning line. At this time, the display deteriorates when the DC power is continuously applied to the liquid crystal 6. Therefore, when AC power is applied to the opposite electrode, voltages of opposite polarities are alternately given. This is called an inverting drive, and its source driver operates at a high frequency of 20 to 100 (Ηz). According to TF Τ 1 2 although the scanning line 1 1 itself is used as the source electrode, on the glass substrate 9, firstly S 1〇 ×, S 1 Ν X or more and Τ Ε 〇S (Tetra Ethyl Ortho Silicate ·· Si 0C2 H5 4) and other under coats (insulating films) 1 4 and amorphous silicon (a-S i: Η) films that are hydrogen-containing amorphous semiconductor films (These are only referred to as "Semiconductor-13- (11) (11) 200426446 film") 15 are sequentially stacked to form a film. Here, as the film-forming device, C V D (Chemical Vapor Deposition) is used as the through-hole system. On this semiconductor film 15, a channel protection film 16 formed by self-integration and using S 1 N X is arranged on the scanning line 11. The semiconductor film 15 is electrically connected to each of the pixel electrodes 13 via an η + -type a -S i: Η film arranged as a low-resistance semiconductor film 17 and a source electrode 18. The semiconductor film 15 is electrically connected to the signal line 10 via a drain electrode 19 extending from the η + type a-Si: Η film (low-resistance semiconductor film) 17 and the signal line 10. In addition, the scan line 11 is formed approximately parallel to the auxiliary capacitor line 20 formed in a region overlapping the pixel electrode 13, and the pixel electrode 13 and the auxiliary capacitor line 20 form a auxiliary capacitor ( C s). Pressing the auxiliary capacitor line 20 causes it to have a potential approximately the same as that of the counter substrate 3. On the opposite substrate 3, on the transparent glass substrate 9, the TFT 12 and the gap between the signal line 10 and the pixel electrode 13 on the array substrate 2, or between the scanning line 11 and the pixel electrode 13 The gaps are shielded from light to form a light-shielding layer 2 1 (BM: Black Matrix) composed of C r (chromium) and CI * 〇 laminated on each other in a matrix. These structures are formed through EP (Photo Engaving Process) steps. Press, in each matrix-like pattern of the light-shielding layer 21, in order to realize color display on the display surface, color filters composed of three primary colors of red (R), green (G), and blue (B) are provided with colors, respectively.部 2 2, and 'the counter electrode 2 made of a transparent I TO film through the organic protective film 23 has a 4 ° ° Regarding the operation of the liquid crystal display device 1 of this normally white mode, please refer to FIG. 4-14- (12 ) (12) 200426446 is as follows. According to this description, the TN mode (Twisted Nematic Mode) is intended as an example. However, since the alignment film and the liquid crystal molecules behave the same, the nematic liquid crystal composition or Chira 1 Nematic liquid crystal composition or STN mode (Super Twisted Nematic Mode), DSTN mode (Double Super Twisted Nematic Mode) > TS TN mode (Tri p 1 e Super Twisted Nematic Mode) In addition, there are FSTN mode (Film Super Twisted Nematic Mode), and Ferroelectic Liquid Crystal Mode (Ferroelectic Liquid Crystal Mode) composed of Chiral Smetic type liquid crystal composition. Of course, it can also become the invention Object. Since the liquid crystal molecules constituting the liquid crystal 6 have polarities, they are aligned in a certain direction when an electric field is applied. LCD screens take advantage of this property. First, as shown in Figure 4 (a), the potential difference between the pixel electrode 13 and the counter electrode 24 is a threshold voltage from the alignment of the liquid crystal 6 to 0 (V), and the incident light is polarized by 1. The plate 7 causes it to be linearly polarized, and rotates the polarization axis by 90 ° approximately through the second polarizing plate 8 along the alignment direction of each liquid crystal molecule constituting the liquid crystal 6. As a result, the incident light is emitted from the display screen of the liquid crystal display device 1 and white (bright) pixels are displayed. This is because the first polarizing plate 7 and the second polarizing plate 8 are arranged at a position crossing Nicol. In this regard, as shown in FIG. 4 (b), the threshold voltage between the pixel electrode 13 and the counter electrode 24 is generated. If the liquid crystal 6 is more likely to occur, the threshold voltage -15- (13) (13) 200426446 is When it is large, because the liquid crystal molecules are aligned along the electric field, the incident angle is changed from the first polarizing plate 7 to linearly polarized light, and the liquid crystal 6 is intended to pass through the same. However, the linearly polarized light passing through the liquid crystal 6 cannot pass through the second polarizing plate 8 because the incident light transmitted through the second polarizing plate 8 has a polarization axis with an offset of 90 °. As a result, the incident light is not emitted from the display screen of the liquid crystal display device 1, and black (dark) pixels are displayed. This is due to the fact that the first polarizing plate 7 and the second polarizing plate 8 are arranged in a parallel Nicol position. The above is the description of the normally white mode, but in the normally black mode, only the display of white pixels and black pixels is replaced, and the effect itself does not change. Above and below the threshold voltage, only the color of the display pixel is changed due to the difference in modes. Next, in such a normally white mode liquid crystal display device 1, conductive foreign matter is incorporated between the pixel electrode 13 and the counter electrode 24 through a manufacturing process to cause the pixel electrode 13 and the counter electrode 2 4 is a factor of approximately the same potential, or the pixel electrode 1 3 and the auxiliary capacitor line 2 0 are short-circuited due to poor insulation of the insulating film 14 The pixel electrode 13 is an auxiliary capacitor line 2 that is approximately equal to the potential of the counter electrode 2 4 0 becomes a factor of the same potential, etc., so the potential difference between the pixel electrode 13 and the counter electrode 24 is approximately 0 (V). In this case, the transmittance of the display screen of the liquid crystal display device 1 often becomes high, and bright spot defects occur. In this embodiment, pixels in which bright spot defects occur are detected as follows. First, 'for the signal line 1 of the liquid crystal display device 1, apply a certain voltage as a center and apply a signal voltage (Vsig) whose polarity is reversed to + 5 (V) and a 5 (V) at each frame time', and for The counter electrode 2 4 applies -16 · (14) (14) 200426446 to apply a voltage (Vcom) of 5 (V) and a voltage of 5 (V) to the auxiliary capacitor line 20, and sequentially for each scan line 1 1 A pulsed scanning voltage (V g) is supplied to display black (dark). In addition, the display brightness of any one hundred display pixels located at the periphery and center of the display screen is detected, and the average value is stored as the "reference black level". After that, the display screen is sequentially scanned, and large pixels with a brightness of 30% or more displayed on the black level are detected, and their positions are memorized. The pixel corresponding to this position is treated as a pixel where a bright spot defect occurs. In this way, the method of repairing the detected pixels with bright spot defects using laser light irradiation is described below. First, as shown in Fig. 5, a laser repairing device 25 for performing this correction is shown. Laser Oscillator 2 6 uses a laser diode (Laser Diode: LD) (not shown) for ACKacoursto-optic: acoustic optics-Nd: YAG laser (Neodymium: Yttrium Aluminium Garnet) Laser) ° Press, as the objective lens 2 7 for processing uses a general-purpose optical microscope objective lens, so the laser light of the laser oscillator 26 can be Nd: YAG laser or Nd: YLF laser. Radiated fundamental wave, second harmonic wave, and the third harmonic wave and fourth harmonic wave of ultraviolet light can be used. In addition, L D can be replaced with a chirped or solitary lamp. The laser repairing device 25 can also change the pulse width (the inverse number of '' repetition frequency X 2 '') of the laser light corresponding to the repairing method described at the end of this specification. Generally, the solid-state laser that operates in A 0-Q switching is when the length of the laser resonator (the distance between a group of resonant mirrors constituting the laser oscillator 26) is constant due to the excitation input (for the application of LD) Electricity-17- (15) (15) 200426446 size) and energy loss inside the laser resonator cause the pulse width to change. That is, if this excitation input becomes smaller or the energy loss inside the laser resonator becomes larger, the pulse width becomes larger, and the energy loss inside the laser resonator 'changes with the time when the laser light is emitted for A ◦- The applied power of the Q switch is controlled. If the power applied to the A0-Q switch is not controlled, it can be controlled by changing the amount of power applied to the L D. The adjustments according to these power levels are adjusted with the power supplied from the laser light source 28. Here, the case where the magnitude of the applied power to L D is specifically changed is shown as an example. When the applied voltage is constant (usually about 2 to 3 (V)), the repetition frequency of laser light is 1 (kHz) or less. When the applied current is changed, the relationship between the applied current to LD and the pulse width of laser light The relationship between the applied current to the LD and the energy of the laser light (indicated by the solid line) is shown in Figure 6. In this chart, since the applied current to L D is equivalent to the excitation input, the pulse width becomes longer as the applied current to L D becomes smaller, and the energy of the laser light becomes smaller. That is, it is known that when the length of the laser oscillator is constant, the pulse width depending on the excitation input laser light changes. However, when the pulse width is changed by this method, the energy of the laser light will also change, so in order to repair the defective pixels with the best energy, the laser repair device 25 is equipped with a variable optical attenuator ( variable
attenuate!· ) 2 9較佳。藉倂用調節此可變光衰減器 2 9 ，與調節對於L D之施加電力之大小或對於A〇一 Q -18- (16) (16)200426446 開關之施加電力之大小，在最佳能量之缺陷畫素之修復爲 可使用1台雷射振盪器就可容易進行。 關於其他之雷射修復裝置2 5之構成，係具有：進行 經過可變光衰減器29之ON/ OFF之擋門30、與載 置具有缺陷畫素之液晶面板（未完成外裝之液晶顯示裝置 之液晶面板）3 1使雷射光與液晶面板3 1相對地進行掃 描裝置之一之XY段3 2、與在XY段3 2引導雷射光之 鏡3 3、與對於缺陷畫素聚光照射雷射光之加工用物鏡透 鏡2 7、攝像缺陷畫素修復狀況之照相機3 4、與透過設 在X Y段3 2之照明於液晶面板3 1之燈3 6 。除此之 外，還具有控制：從雷射光源2 8供給於L D之施加電 力、與供給於A〇- Q開關之施加電力、與擋門3 0之開 閉、與可變光衰減器2 9之光衰減率、與XY段3 2動作 之控制器3 7。 茲關於以雷射修復裝置2 5進行之缺陷修復情形說明 如下。按，在此所謂「缺陷畫素之修復」，將到此所說明 之透過率作爲基準時，指將6 5 0 ( 1 X )配置於陣列基 板2之背面照射，將以下說明具有最苛酷亮點缺陷之畫素 之透過率視爲1 0 0 %時，以雷射光之處理後減少到2 0 %以下。例如，最苛酷之亮點缺陷係畫素電極1 3與補助 電容線2 0變成短路，畫素電極1 3與對向電極2 4之電 位差約略變成〇 ( V )之情形。於此時，較關於液晶6之 上述閾値電壓更高電壓差施加於畫素電極1 3與對向電極 2 4之間時，也與正常之畫素電極同樣地具有大約1 〇〇 -19- (17) (17)200426446 %之透過率。 按，如第7圖所示，於此雷射光係從第2配向膜5射 入，進行照射使其在液晶6中連結聚光點較佳。所以不在 陣列基板2或對向基板3上位有聚光點，係爲了防止對於 畫素電極1 3或對向電極2 4本身或第1配向膜4或第2 配向膜5射入強烈能量而給與損傷所致。又，當然，也可 以從第1配向膜4同樣射入雷射光。 從雷射振盪器2 6射出之（Nd : YAG)雷射光， 係於波長1 · 0 6 ( # m )，缺陷畫素上之雷射點（1 a s e r S P 〇 t)之直徑（雷射光之照射面直徑）爲以2 · 5 ( V m )狀態照射。此際，反復頻率爲在1 0 0 ( Η z )於 缺陷畫素之掃描速度係成爲1 ( ni m / s )，並且’所照 射之雷射光之輸出係成爲2 (//J/pulse)。於此掃描之雷 射光與缺陷畫素之位置關係之槪略係變成如第8圖所示’ 雷射光將在缺陷畫素之內部縱橫折返進行掃描。 更詳細則如第9圖所示。沿著掃描線1 1之長向’將 從發生缺陷之畫素電極1 3 —端部（例如該圖中之a地 點）到另端部（例如該圖中之b地點）並行掃描畫素電極 1 3端邊，在另端部將掃描方向向該圖之上方折返（例如 到該圖中之c地點）依序進行掃描。於此’屬於掃描開始 地點之上述一端部（a地點）’係以遮光層2 1所定之開 口部（光透過部）端部之距離L ’爲至少離開7 # m較 佳。若此距離L太小時’由後述雷射光所發生之飛濺物’ 也飛濺到正常顯示之畫素電極1 3 ’恐有發生新的顯示不 >20- (18) (18)200426446 良之虞。 茲說明將第9圖之放大圖以第1 0圖所示之雷射光照 射之特徵如下。第1 0 ( a )圖係將以前進行之雷射照射 面重疊進行掃描之方法，第1 0 ( b )圖係此次所進行將 雷射照射面以離散性掃描手法，在雷射光之照射面徑相同 作爲前提條件下，來思考輸入能量。按，於第1 1 ( a ) 係表示具有5 0 %重疊時之每單位面積之照射面，於第 1 1 ( b )係表示成P / d = 2離散情形以相同每單位面 積之照射面。雙方之圖，形成照射面之單位面積係以虛線 所圍住之部分。 第1 1 ( a )之情形時，因雷射光之照射次數多所以 每一畫素花費3 0秒左右之處理時間。並且，所照射之雷 射光之輸出爲0 · 5 (// J/pulse )。與此相對，第1 1 (b )之情形時，因雷射光之照射次數少所以每一畫素以 3秒左右之處理時間結束。並且’所照射之雷射光之輸出 係2 ( // J / p u 1 s e )。比較關於此2種手法之資料時，就可 知照射時間與每1脈衝之積大爲不同° 亦即，第1 1 ( a )之情形時’將變成合計各個照射 面時每單位面積受到8次之照射，所以每單位面積之照射 能量將變成0 · 5 X 8 = 4 ( β J/Pulse )。與此相對，第 1 1 ( b )之情形時，雖然受到4次之照射，但是，因係 P / d二2之離散性狀態，所以只有斜線部分沒有照射。 因此，將變成每單位面積受到0 · 2 5次之照射，所以’ 每單位面積之照射能量將變成2 X 4 X 0 · 2 5二2 ( -21 - (19) (19)200426446 // J /p u 1 s e )。亦即，每單位面積之照射能量之總量變成第 11圖（a)時之1/2。 此結果，每單位面積之照射能量大時爲如第1 1 (b )離散而照射之方法時，曉得照射能量之總量爲少。 除了照射時間少之外，照射能量之總計所以爲少，係考慮 陣列基板2或對向基板3之損傷時爲有效。又’每一 1次 之照射之能量大而照射次數也少，所以可使加工餘裕具有 ± 1 0 %左右。 與此相反，於如第1 1 ( a )圖重疊照射之方法’係 每一 1次之照射能量爲小照射次數也多，所以只可將加工 餘裕變狹爲± 5 %左右。重疊時，每單位面積之照射能量 就變大，依雷射振盪器2 6之輸出變動即使能量些許變 高，彩色部2 2等構造物受到熱能之損傷變成發生新缺陷 之原因。 並且，於此重疊方法，係依照射能量液晶6被加熱液 晶6氣化有時會發生多數之氣泡。有依隨機地發生之氣泡 致使雷射光之照射面之位置或大小起變化，因依此氣泡在 排除液晶6之陣列基板2或對向基板3之表面，因直接給 與雷射光之熱能之損傷會變大，所以變成新缺陷之原因。 原本，第1配向膜與4第2配向膜5係厚度爲經過擦 光處理得到聚亞胺膜，但是於製造步驟此膜厚之偏差度係 被管理在不影響影像之顯示品質之程度（± 1 〇 % )範 圍。於缺陷畫素之修復，起因於此土 1 0 %之膜厚之偏差 (亦即，干擾）而發生修復良好部位與不良部位，即使以 -22- (20) (20)200426446 相同條件處理也出現不能達成充分減少透過率（（修iS & 再現性不充分時）之情形。 可容許此干擾之程度關於雷射照射之能量，加X _ @ 爲大時，即使以同一條件處理也可得到充分修復再^ 14 ° 如上述依據本發明以離散照射之方式時，可將加工# % $ 爲± 1 0 %，較重疊照射方式可取大的加工餘裕。 實際上，於重疊率5 0 %時之適當修復條件W Μ 點徑爲2 · 5 ( // m )、掃描速度爲1 ( m m / s ) ^ 復頻率爲1 ( k Η z )、照射能量爲0 · 5 0〜〇 · 5 5 (β J/Pulse )，但是因加工餘裕爲低至+ 5 %，所以缺陷 畫素之修復成功機率爲停於7 0 %。 與此，於P / d = 2時之適當修復條件，雷射點徑爲 2 . 5 ( /i m )、掃描速度爲1 (mm/s)、反復頻率 爲1 0 0 ( k Η z )、照射能量爲1 · 0〜2 · 0 ( β J/Pulse )，但是因加工餘裕爲高至± 1 〇 %，所以缺陷 畫素之修復成功機率爲變成1 0 0 %。 茲將此離散照射雷射之方法修復缺陷畫素之理由使用 第2圖說明。第1 2 ( a )圖係受到雷射照射之部位之放 大上視圖，第1 2 ( b )係於X - X ’線所視剖面圖。於 第1 2 ( a )圖就可淸楚，將雷射光之照射面3 8作爲中 心，在其周邊部發生波紋狀”混濁”。此”混濁”係於第1習 知例未任何顯示，利用此混濁（於第1習知例未揭示之機 制）進行缺陷畫素之修復爲本發明之特徵。 1 2 ( b )圖就可淸楚，於雷射光之照射面3 8係以 -23- (21) (21)200426446 照射能量，第1配向膜4被挖到達I T〇膜所構成之畫素 電極1 3 ，尤其從陣列基板2之側射入雷射光時，也到達 周邊之彩色部2 2而形成第1配向膜4大約消滅之部分。 並且，聚亞胺、I Τ〇或染料之細質固化物或變質之液晶 固化物等所成之飛濺物3 9 ，在雷射光之照射面3 8周圍 ((對應於”混濁”之位置），將如第1 2 ( a )圖所示之 雷射光之照射面3 8爲中心飛濺成波紋狀埋入形成於第1 配向膜4表面之微細擦光溝（未圖示）。藉此，因液晶6 之同調（h 〇 m ο 1 〇 g y )會發生變化，所以微視時形成第1配 向膜4所變質之部分，而認爲因此發生此混濁。 結果而言，因以飛濺物3 9埋入擦光溝，所以’構成 液晶6之各個液晶分子不能沿著以施加於畫素電極1 3與 對向電極2 4之間之電壓所發生之電場排列。並且，因液 晶6變成不能配向（配向性降低），所以，經由液晶6之 光之通過或反射受到阻礙變成缺陷畫素。 亦即，如以第1 〇 ( a )圖所示之重疊方法，除了在 掃描面削去所有配向膜、I T〇膜或彩色部之外，因每1 脈衝之照射能量爲小所以也不形成”混濁”。但是，若依據 此次之方法，迄今也會削掉爲只有雷射光之照射面3 8而 已，因其他領域係以飛濺物3 9阻礙液晶分子之配向’來 實現缺陷畫素之修正（此處係透過率之降低），所以 '液晶 面板3 1全體之損傷爲少。 又，於此重疊之方法若在8 5 t之乾燥環境下使其動 作時確認了透過率之上升。對此，於此次之方法透過率幾 -24- (22) (22)200426446 乎未變動。此係此次之方法係由飛濺物3 9埋入擦光溝， 認爲即使由雷射照射上升之溫度下降之後也不容易引起配 向之復活。 於第1 3圖’表示與透過率τ之關係，於第 1 4圖’表示P / d與照射能量E之關係。也考慮餘裕， 在以斜線所圍住部分雖然各値有變遷，但是依據第1 3圖 時曉得了 P / d爲2〜3時變成最低，也曉得了依第1 4 圖P / d爲2〜3時可使照射能量也變成最大。從這些結 果’曉得了在P / d爲2〜3時以最佳條件下可實現缺陷 畫素之修復。 如上述以離散照射雷射光，利用形成於顯示面之”混 濁’’進行缺陷畫素之修復方法，原理上雖然可適用於具有 配向膜之顯示裝置，所以，此方法之適用對象並非限於說 明所舉作爲開關元件使用主動矩陣型之液晶顯示裝置。例 如’也可使用 Μ I M (Metal Insulator Metal)、也可以 使用不使用開關元件之單純矩陣型之液晶顯示裝置。並 且’也可以使用電漿位址型之液晶顯示裝置 (PALC:Plasma Address Liquid Crystal)。 又，雖然使用具有亮點缺陷之畫素爲例做了說明，對 於其他缺陷模態本手法也有效。例如，也可適用於因靜電 破壞之開關元件之異常動作或層間絕緣膜之破損引起之電 極或配線之短路，並且畫素電極之脫落或配向異常等。 接著，除了迄今所說明之離散性地照射雷射光以進行 缺陷畫素之修復方法之外，說明另一修復方法如下。本方 - 25- (23) (23)200426446 法雖然可說是倂具第1習知例與第2習知例之方法，但是 Μ未揭示各個習知例以互相之方法以補充缺陷畫素之修正 遺漏之思想。按’本方法，係第5圖所示之脈衝寬度爲使 用可變之雷射修復裝置2 5進行較佳。 從第1 5圖到第1 8圖所示方法，與第2習知例相同 ^寸應於1個畫素電極1 3分別設有2個（複數）之T F Τ (開關元件）。如第1 5圖所示，一方係在畫素電極1 3 以配線機械性且電方式連接之主T F T 4 0，另方係雖然 與畫素電極1 3以機械性連接，但是未以電方式連接（但 是機械性地接觸於從層間絕緣膜4 2所絕緣之掃描線1 1 延出之配線4 3 )之副T F T 4 1。首先，經過上述畫素 缺陷之檢出，以檢出發生缺陷之畫素。 接著，特定發生畫素缺陷處所時，如第1 6圖所示， 首先，關於因在主T F T 4 0之發生動作不良之缺陷畫 素，將連結主T F T 4 0與掃描線1 1之配線4 3將以雷 射修復裝置2 5所使用之雷射光加以切斷。此時之雷射光 之脈衝寬度，係爲了熔化切斷配線設定爲1 〇 ( n s )以 下之短，照射脈衝雷射光加以切斷。 接著，如第1 7圖所示，選擇與畫素電極1 3連接之 副T F Τ 4 1 ，將從主T F Τ 4 0以層間絕緣膜4 2以電 方式分開之畫素電極1 3與副T F Τ 4 1照射來自雷射修 復裝置2 5之雷射光選擇性地且以電方式連接。具體上爲 如第1 8圖以第1 7圖之Α 一 Α ’線之剖面所示，經由層 間絕緣膜4 2將畫素電極1 3與副T F Τ 4： 1之電極以雷 -26- (24) (24)200426446 射光熔化連接。因此，於此雷射光之脈衝寬度爲設定成 1 0 ( n s )之短，以照射脈衝雷射光連接兩者。 藉此處理，關於被修復畫素缺陷者，畫素雖然以正常 動作進行，但是關於並非因T F Τ之動作不良要因之畫素 缺陷就不能修復，也因具有雷射光之加工精度之偏差，所 以只以此方法只能修復畫素缺陷全體之3 0〜5 0 %左 右。 於此，即使進行對於此副T F Τ 4 1之換接之後再檢 查畫素缺陷，假如畫素缺陷還未確認時，例如以如上述所 說明之離散性地照射雷射光之方法，利用如第1習知例所 示配向膜之紊亂進行缺陷畫素之修復者。將這些一系列步 驟於第1 9圖表示流程圖（對於副T F Τ 4 1之換接係對 於冗餘電路換接之一種）。 按，此處理時，於雷射修復裝置2 5所使用之雷射光 之脈衝寬度爲2 0〜2 0 0 ( n s )。當然’也可以替代 第1習知例將上述之雷射光以離散性地照射以形成”混濁’’ 進行缺陷畫素之修復。 又，將作爲開關元件使用T F Τ之主動矩陣型之液晶 顯示裝置爲例做了說明，但是替代此也可使用Μ I Μ型之 液晶顯示裝置。 [發明之效果] 依據本發明，可達成抑制加於液晶面板之熱性損傷之 缺陷畫素之修正。又，對於將開關元件之動作不良爲首之 -27- (25) (25)200426446 各種缺陷模態也可正確地對應之缺陷畫素之修正。亦即， 若依據本發明，可製造達成缺陷畫素進行良好修復之液晶 顯示裝置。又，也可提供一種像這樣供爲修復之雷射修復 裝置。 【圖式簡單說明】 第1圖係表示本發明之液晶顯示裝置。 第2圖係表示本發明之液晶顯示裝置之第1圖中之Y 一 Y ’線之剖面圖。 第3圖係表示本發明之全體液晶顯示裝置之槪略構成 圖。 第4圖係用來說明本發明之液晶顯示裝置之顯示原理 之斜視圖。 第5圖係表示本發明之全體雷射修復裝置之槪略構成 圖。 第6圖係表示本發明之L D之施加電流與雷射光之脈 衝寬度之關係及對於L D之施加電流與雷射光所具之能量 之關係之圖表。 第7圖係表示本發明之液晶顯示裝置之製造方法之雷 射光之照射狀態之剖面圖。 第8圖係表示雷射光之缺陷畫素之位置關係之槪略斜 視圖。 第9圖係表示雷射光之缺陷畫素之位置關係之槪略斜 視圖c -28- (26) (26)200426446 第1 0圖（a )係表示使其重疊時之雷射光之各照射 面間之位置關係之上面放大圖，（b )係表示使其離開時 之雷射光之各照射面間之位置關係之上面放大圖。 第1 1圖（a )係表示於第1 〇圖（a )之每單位面 積之上面放大圖，（b)係於第1〇圖（b)之每單位面 積之上面放大圖。 第1 2圖（a )係依本發明之液晶顯示裝置之製造方 法之受到雷射照射之部位之放大上面圖，（b )係以第 1 2 ( a )之X — X ’線所視之剖面圖。 第13圖係表示P/d與透過率T之關係之圖表。 第1 4圖係表示P / d與照射能量E之關係之圖表。 第1 5圖係表示於本發明之液晶顯示裝置之畫素電極 與主T F T及副T F T之關係之上視圖。 第16圖係表示連接第15圖之主TFT與畫素電極 之配線爲由雷射光所切斷狀態之上視圖。 第1 7圖係表示連接第1 5圖之副TFT與畫素電極 之配線爲由雷射光所連接狀態之上視圖。 第1 8圖係以第1 8圖之A - A ’線所視之剖面圖。 第1 9圖係表示第1 5圖至第1 7圖之一系列步驟之 流程圖。 [主要元件對照表] 1 液晶顯示裝置 2 陣列基板 -29- (27) 對向基板 第1配向膜 第2配向膜 液晶 第1偏光板 第2偏光板 玻璃基板 訊號線 掃描線 TFT 畫素電極 底塗層 非晶質矽膜 頻道保護膜 η +型氫化非晶質矽膜 源極電極 汲極電極 補助電容線 遮光層 彩色部 有機保護膜 對向電極 雷射修復裝置 雷射振盪器 -30- (28) 加工用物鏡透鏡 雷射光源 可變光衰減器 擋門 液晶面板 X Y段 鏡 照相機 開口部 燈 控制器 照射面 飛濺物 主T F T 副T F T 層間絕緣膜 配線 -31 -attenuate! ·) 2 9 is better. By adjusting the variable optical attenuator 29, and adjusting the magnitude of the applied power to the LD or the magnitude of the applied power to the A0-Q-18- (16) (16) 200426446 switch, Defective pixels can be easily repaired using a laser oscillator. The structure of the other laser repairing device 25 includes a shutter 30 that is turned ON / OFF through a variable optical attenuator 29, and a liquid crystal panel (unfinished exterior liquid crystal display) mounted with defective pixels. The LCD panel of the device) 3 1 Makes the laser light opposite to the LCD panel 3 1 XY segment 3 which is one of the scanning devices 2, 2 and XY segment 3 2 guides the laser light mirror 3 3, and condenses the defective pixels Objective lens 27 for processing of laser light, camera 3 4 for repairing defective pixels of the camera, and a lamp 3 6 that transmits the illumination on the liquid crystal panel 3 1 through the XY section 32. In addition, there are controls: the applied power supplied from the laser light source 28 to the LD, the applied power supplied to the A0-Q switch, the opening and closing of the door 30, and the variable optical attenuator 2 9 The light attenuation rate, the controller 3 7 with the XY segment 3 2 operation. Defect repair with laser repair device 25 is described below. Press, the so-called "repair of defective pixels", when the transmittance explained here is used as a reference, it means that 650 (1 X) is arranged on the back of the array substrate 2 and illuminated, and the following description has the most harsh highlights When the defective pixel's transmittance is regarded as 100%, it is reduced to less than 20% after treatment with laser light. For example, the most severe bright spot defect is a situation where the pixel electrode 13 and the auxiliary capacitor line 20 become short-circuited, and the potential difference between the pixel electrode 13 and the counter electrode 24 becomes approximately 0 (V). At this time, when a higher voltage difference is applied between the pixel electrode 13 and the counter electrode 24 than the above threshold voltage of the liquid crystal 6, it also has about 100-19- like the normal pixel electrode. (17) (17) 200426446% transmittance. As shown in Fig. 7, it is preferable that the laser light enters from the second alignment film 5 and is irradiated to connect the condensing points in the liquid crystal 6. Therefore, there is no light-condensing spot on the array substrate 2 or the counter substrate 3, in order to prevent the pixel electrode 13 or the counter electrode 2 4 itself or the first alignment film 4 or the second alignment film 5 from injecting strong energy into it. And damage. It goes without saying that laser light can also be incident from the first alignment film 4 as well. The (Nd: YAG) laser light emitted from the laser oscillator 2 6 is at a wavelength of 1.06 (# m), the diameter of the laser point (1 aser SP 〇t) on the defective pixel (of the laser light) Irradiation surface diameter) is irradiated in a state of 2 · 5 (V m). At this time, the repetition frequency is 1 (ni m / s) at the scanning speed of the defective pixel at 100 (Η z), and the output of the irradiated laser light is 2 (// J / pulse) . The positional relationship between the laser light and the defective pixels scanned here is changed as shown in Fig. 8 'The laser light will be turned back and forth within the defective pixels for scanning. More details are shown in Figure 9. Scanning the pixel electrode in parallel along the scanning line 11 from the pixel electrode 1 3 where the defect occurred to the end (for example, point a in the figure) to the other end (for example, point b in the figure) 1 At the 3 end edges, turn the scanning direction back to the top of the figure at the other end (for example, go to point c in the figure) and scan in sequence. Here, the above-mentioned one end portion (a point) belonging to the scanning start point is preferably at least 7 # m away from the end portion of the opening portion (light transmitting portion) defined by the light-shielding layer 21. If the distance L is too small, 'spatters generated by the laser light described later' will also splash on the pixel electrodes 1 3 'which are normally displayed, and there is a possibility that a new display will not occur > 20- (18) (18) 200426446. The following describes the characteristics of the enlarged view of FIG. 9 with the laser light shown in FIG. 10 as follows. Figure 10 (a) is a method of scanning the previously irradiated laser surfaces in an overlapping manner. Figure 10 (b) is a discrete scanning method of laser irradiated surfaces and irradiated with laser light. Consider the input energy with the same area diameter as a prerequisite. Press, at 1 1 (a) is the irradiation surface per unit area with 50% overlap, and at 1 1 (b) is the irradiation surface with the same per unit area in P / d = 2 discrete cases . In the drawings of both sides, the unit area forming the irradiation surface is the part enclosed by the dotted line. In the case of 11 (a), since the laser light is irradiated many times, each pixel takes about 30 seconds of processing time. In addition, the output of the irradiated laser light is 0 · 5 (// J / pulse). In contrast, in the case of 1 1 (b), since the number of times of laser light irradiation is small, each pixel ends with a processing time of about 3 seconds. And the output of the irradiated laser light is 2 (// J / p u 1 s e). When comparing the data about these two methods, it can be seen that the irradiation time is greatly different from the product of each pulse. That is, in the case of the first 1 (a), it will become 8 times per unit area when the total irradiation surface is received. Irradiation, so the irradiation energy per unit area will become 0 · 5 X 8 = 4 (β J / Pulse). On the other hand, in the case of 1 1 (b), although it was irradiated 4 times, but because of the discrete state of P / d 22, only the oblique line part is not irradiated. Therefore, it will become 0 · 25 times per unit area, so the irradiation energy per unit area will become 2 X 4 X 0 · 2 5 2 2 (-21-(19) (19) 200426446 // J / pu 1 se). That is, the total amount of irradiation energy per unit area becomes 1/2 of that in Fig. 11 (a). As a result, when the irradiation energy per unit area is large, it is known that the total irradiation energy is small when the irradiation method is discrete as in Section 1 (b). In addition to the short irradiation time, the total amount of irradiation energy is small, which is effective when the damage to the array substrate 2 or the counter substrate 3 is considered. Since the energy of each irradiation is large and the number of irradiations is small, the machining margin can be about ± 10%. In contrast, in the method of overlapping irradiation as shown in Fig. 11 (a), the irradiation energy per time is small and the number of irradiations is large, so the machining margin can only be narrowed to about 5%. When overlapped, the irradiation energy per unit area becomes larger. Even if the output of the laser oscillator 26 changes slightly, the structural parts such as the color section 22 are damaged by thermal energy and become the cause of new defects. In addition, in this superimposing method, the liquid crystal 6 is heated in accordance with the radiant energy, and the liquid crystal 6 may vaporize, and many bubbles may be generated. The position or size of the irradiated surface of the laser light varies depending on the bubbles generated randomly. Therefore, the bubbles directly damage the thermal energy of the laser light on the surface of the array substrate 2 or the opposite substrate 3 that excludes the liquid crystal 6 It becomes larger, so it becomes the cause of new defects. Originally, the thicknesses of the first alignment film and the fourth alignment film of the 5th series were polyimide films obtained by polishing. However, the deviation of this film thickness during the manufacturing process was managed to the extent that it did not affect the image display quality (± 10%) range. For the repair of defective pixels, due to the deviation of the film thickness (ie, interference) of 10% of this soil, good repair and bad repair occur, even if treated under the same conditions as -22- (20) (20) 200426446 It may not be possible to achieve a sufficient reduction in transmittance ((when iS & reproducibility is not sufficient). The extent of this interference is allowed. Regarding the energy of laser irradiation, when X _ @ is large, it can be processed even under the same conditions. Fully restored and then ^ 14 ° As described above in the case of discrete irradiation in accordance with the present invention, the processing #% $ can be ± 10%, which can take a larger processing margin than the overlapping irradiation method. In fact, the overlap rate is 50% Appropriate repair conditions at the time W MW spot diameter is 2.5 · (// m), scanning speed is 1 (mm / s) ^ complex frequency is 1 (k Η z), and irradiation energy is 0 · 5 0 ~ 〇 · 5 5 (β J / Pulse), but because the machining margin is as low as + 5%, the chance of successful repair of defective pixels is stopped at 70%. Meanwhile, the appropriate repair conditions at P / d = 2 The shot diameter is 2.5 (/ im), the scanning speed is 1 (mm / s), the repetition frequency is 100 (k Η z), the irradiation energy It is 1 · 0 ~ 2 · 0 (β J / Pulse), but because the processing margin is as high as ± 10%, the probability of successful repair of the defective pixels becomes 100%. The discrete irradiation laser is The reason for the method of repairing defective pixels is illustrated in Fig. 2. Fig. 12 (a) is an enlarged top view of a part irradiated with laser light, and Fig. 12 (b) is a cross-sectional view taken along line X-X '. As can be seen in Figure 12 (a), the irradiated surface 38 of the laser light is used as the center, and a wavy "turbidity" occurs at the periphery. This "turbidity" is not shown in the first conventional example. Using this turbidity (a mechanism not disclosed in the first conventional example) to repair defective pixels is a feature of the present invention. 1 2 (b) The picture can be seen clearly on the irradiation surface of the laser light. -(21) (21) 200426446 Irradiated with energy, the first alignment film 4 is dug to reach the pixel electrode 1 3 composed of the IT0 film, especially when laser light is incident from the side of the array substrate 2 to the surrounding color portion 2 2 to form an approximately extinct portion of the first alignment film 4. In addition, a fine cured product of polyimide, I TO or a dye or a deteriorated liquid crystal is cured After the formed spatter 3 9, around the irradiation surface 38 of the laser light ((corresponding to the position of “cloudiness”), the irradiation surface 38 of the laser light as shown in FIG. 12 (a) is centered It is splashed in a wave shape and is embedded in a fine polishing groove (not shown) formed on the surface of the first alignment film 4. As a result, the coherence (h 〇m ο 1 〇gy) of the liquid crystal 6 changes, so when the microscopic view The deteriorated portion of the first alignment film 4 is formed, and it is considered that this turbidity occurs as a result. As a result, since the rubbing groove is buried with the spatter 39, the liquid crystal molecules constituting the liquid crystal 6 cannot follow the electric field generated by the voltage applied between the pixel electrode 13 and the counter electrode 24. arrangement. In addition, since the liquid crystal 6 becomes non-alignable (reduced alignment), the passage or reflection of light passing through the liquid crystal 6 is blocked and becomes a defective pixel. That is, as shown in FIG. 10 (a), the overlapping method does not form all the alignment films, IT0 films, or color parts except that the irradiation energy per pulse is small, except that all alignment films, IT0 films, and color sections are cut off. "turbid". However, according to this method, only the irradiation surface 3 8 of laser light will be cut so far. In other fields, the correction of defective pixels is achieved by the spatter 39 9 blocking the alignment of liquid crystal molecules (here Is a decrease in transmittance), so the 'LCD panel 31 is less damaged as a whole. In addition, when the method overlapped with this method was used to operate in a dry environment of 8 5 t, the transmittance was confirmed to increase. In this regard, the transmittance of the method at this time is almost unchanged -24- (22) (22) 200426446. In this method, the spatter 39 is buried in the polishing groove, and it is considered that it is not easy to cause the resurrection of the alignment even after the temperature increased by the laser irradiation. Fig. 13 shows the relationship with transmittance τ, and Fig. 14 shows the relationship between P / d and irradiation energy E. The margin is also considered. Although there are changes in the area surrounded by diagonal lines, according to Fig. 13, I know that P / d becomes the lowest when 2 to 3, and I also know that P / d is 2 according to Fig. 14 At ~ 3, the irradiation energy can also be maximized. From these results, it is known that when the P / d is 2 to 3, repair of defective pixels can be achieved under optimal conditions. As described above, the method of repairing defective pixels by discretely irradiating laser light and using "cloudiness" formed on the display surface is in principle applicable to a display device having an alignment film, so the applicable object of this method is not limited to the description For example, an active matrix type liquid crystal display device is used as a switching element. For example, 'M IM (Metal Insulator Metal) may also be used, and a simple matrix type liquid crystal display device not using a switching element may be used. Also, a plasma level may be used. Address type liquid crystal display device (PALC: Plasma Address Liquid Crystal). Also, although a pixel with bright dot defects has been used as an example, this method is also effective for other defect modes. For example, it can also be applied to damage caused by static electricity. Short circuit of electrodes or wiring caused by abnormal operation of the switching element or damage of the interlayer insulating film, and the pixel electrodes fall off or the alignment is abnormal, etc. Next, in addition to the discrete light explained above, laser light is irradiated discretely to perform defective pixel In addition to the repair method, another repair method is described below. This party-25- (23) (23) 200426446 Although it can be said that the method is equipped with the first and second known examples, M does not disclose the idea of correcting the omissions of each known example in a mutual way to supplement the defective pixels. According to this method, The pulse width shown in Fig. 5 is preferably performed using a variable laser repair device 25. The method shown in Fig. 15 to Fig. 18 is the same as that in the second conventional example. The size should be 1 The pixel electrode 1 3 is provided with two (plural) TF T (switching elements). As shown in FIG. 15, one is the main TFT 40 0 which is mechanically and electrically connected to the pixel electrode 1 3 by wiring. The other is mechanically connected to the pixel electrode 1 3, but is not electrically connected (but mechanically contacts the wiring 4 3 extended from the scanning line 1 1 insulated from the interlayer insulating film 4 2) Sub-TFT 41. First, the above-mentioned pixel defect detection is performed to detect the defective pixel. Next, when the pixel defect location is specified, as shown in FIG. Defective pixels with a defect of 40 will connect the main TFT 4 0 with the scanning line 1 1 and the wiring 4 3 will be laser The laser light used by the complex device 25 is cut off. The pulse width of the laser light at this time is set to be shorter than 10 (ns) for melting and cutting the wiring, and the pulsed laser light is irradiated to cut off. Next, as As shown in FIG. 17, the sub-TF TT 4 1 connected to the pixel electrode 1 3 is selected, and the pixel electrode 1 3 and the sub-TF Τ 4 are electrically separated from the main TF TT 40 by an interlayer insulating film 4 2. 1 irradiates the laser light from the laser repair device 2 5 is selectively and electrically connected. Specifically, as shown in the cross-section of the line A-A ′ of FIG. 18 and FIG. 17, via the interlayer insulating film 4 2 The pixel electrode 1 3 and the electrode of the auxiliary TF Τ 4: 1 are fused and connected by the light of Ray-26- (24) (24) 200426446. Therefore, the pulse width of the laser light is set to be as short as 10 (n s), and the two are connected with the pulse laser light. With this processing, although the pixel defect is repaired, although the pixel is carried out in normal operation, the pixel defect cannot be repaired because of the defect of TF TT, and because of the deviation of the processing accuracy of laser light, Only this method can only repair about 30% to 50% of the total pixel defects. Here, even after the replacement of this sub-TF TT 4 1 is checked for pixel defects, if the pixel defects have not been confirmed, for example, the method of discretely irradiating laser light as described above, using The disorder of the alignment film shown in the conventional example is a repairer of defective pixels. These series of steps are shown in FIG. 19 as a flowchart (for the switching of the secondary T F T 4 1 is one of the switching of the redundant circuit). In this process, the pulse width of the laser light used in the laser repairing device 25 is 20 to 2 0 0 (n s). Of course, instead of the first conventional example, the above-mentioned laser light may be discretely irradiated to form "cloudiness" for repairing defective pixels. In addition, an active matrix type liquid crystal display device using TF T will be used as a switching element. The explanation is given by way of example, but a liquid crystal display device of the M I M type may be used instead. [Effects of the Invention] According to the present invention, correction of defective pixels that suppress thermal damage to a liquid crystal panel can be achieved. -27- (25) (25) 200426446 which is based on the poor operation of the switching element can be corrected for various defect modes that correspond to the defect pixels. That is, according to the present invention, the defect pixels can be manufactured to achieve A well-repaired liquid crystal display device. Also, a laser repair device for repair like this can be provided. [Brief description of the drawings] Fig. 1 shows the liquid crystal display device of the present invention. Fig. 2 shows the liquid crystal display device of the present invention. A cross-sectional view of the Y-Y 'line in the first diagram of the liquid crystal display device. The third diagram is a schematic configuration diagram of the entire liquid crystal display device of the present invention. The fourth diagram is for explaining the present invention. A perspective view of the display principle of a liquid crystal display device. Fig. 5 is a schematic diagram showing the overall laser repair device of the present invention. Fig. 6 is a diagram showing the relationship between the applied current of the LD and the pulse width of the laser light and A graph showing the relationship between the applied current of LD and the energy of laser light. Fig. 7 is a cross-sectional view showing the irradiation state of laser light in the method for manufacturing a liquid crystal display device of the present invention. Fig. 8 is a view showing the defects of laser light. Figure 9 is a perspective view showing the positional relationship of pixels. Figure 9 is a perspective view showing the positional relationship of defective pixels of laser light. C -28- (26) (26) 200426446 Figure 10 (a) shows The upper enlarged view of the positional relationship between the irradiation surfaces of the laser light when it is overlapped, (b) is the upper enlarged view showing the positional relationship between the irradiation surfaces of the laser light when it is moved away. a) is an enlarged view of the unit area shown in FIG. 10 (a), and (b) is an enlarged view of the unit area of FIG. 10 (b). FIG. 12 (a) is Acceptance of manufacturing method of liquid crystal display device according to the present invention The enlarged top view of the part irradiated by the laser, (b) is a cross-sectional view taken along line X-X 'of the first 12 (a). Figure 13 is a graph showing the relationship between P / d and transmittance T. Fig. 14 is a graph showing the relationship between P / d and the irradiation energy E. Fig. 15 is a top view showing the relationship between the pixel electrode and the main TFT and the sub TFT of the liquid crystal display device of the present invention. Fig. 16 It is a top view showing a state where the wiring connecting the main TFT and the pixel electrode of FIG. 15 is cut by the laser light. FIG. 17 shows a wiring connecting the sub TFT and the pixel electrode of FIG. 15 as a wiring. Top view of the connected state of the light. Fig. 18 is a sectional view taken along line A-A 'of Fig. 18. Fig. 19 is a flowchart showing a series of steps from Fig. 15 to Fig. 17. [Comparison table of main components] 1 Liquid crystal display device 2 Array substrate-29- (27) Opposite substrate 1st alignment film 2nd alignment film Liquid crystal 1st polarizer 2nd polarizer glass substrate Signal line scan line TFT Pixel electrode bottom Coated amorphous silicon film channel protection film η + -type hydrogenated amorphous silicon film source electrode drain electrode auxiliary capacitor line light shielding layer colored portion organic protective film counter electrode laser repair device laser oscillator -30- ( 28) Processing objective lens laser light source variable light attenuator door LCD panel XY segment mirror camera opening lamp controller illuminated surface splashing object main TFT sub TFT interlayer insulating film wiring -31-