JP4308109B2 - 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置 - Google Patents
磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置 Download PDFInfo
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- JP4308109B2 JP4308109B2 JP2004259777A JP2004259777A JP4308109B2 JP 4308109 B2 JP4308109 B2 JP 4308109B2 JP 2004259777 A JP2004259777 A JP 2004259777A JP 2004259777 A JP2004259777 A JP 2004259777A JP 4308109 B2 JP4308109 B2 JP 4308109B2
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- pinned layer
- cobalt
- pinned
- nonmagnetic intermediate
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
Description
2 CPP素子
3 上部電極兼シールド層
4 下部電極兼シールド層
5 バッファ層
6 反強磁性層
7 アウターピンド層
71 反強磁性層隣接層
72 非磁性中間層アウター隣接層
8 非磁性中間層
9 インナーピンド層
91 非磁性中間層インナー隣接層
92,94,96 中間Cu層
93,95 中間CoFe層
97 スペーサ層隣接層
10 スペーサ層
11 フリー層
12 保護層
13 絶縁膜
14 硬質磁性膜
14 上部下地層
15 下部下時層
18 SV膜
19 側面
21 記録媒体
22 センス電流
23 記録媒体移動方向
Claims (6)
- 外部磁界に対して磁化方向が変化するフリー層と、
前記外部磁界に対して磁化方向が固定されたアウターピンド層と、膜厚0.4nmのルテニウムからなる非磁性中間層と、該非磁性中間層を介して該アウターピンド層と反強磁性的に結合することによって前記外部磁界に対して磁化方向が固定される、膜厚3nm以上のインナーピンド層との積層体を有するピンド層と、
前記フリー層と前記インナーピンド層とに挟まれたスペーサ層とを有し、
該ピンド層、該スペーサ層、および該フリー層の各層を略積層方向にセンス電流が流れる、磁気抵抗効果素子であって、
前記ピンド層の前記フリー層との対向面の反対側となる面に接して設けられ、前記アウターピンド層と交換結合して、該アウターピンド層の磁化方向を前記外部磁界に対して固定する、イリジウムマンガン合金よりなる反強磁性層を有し、
前記アウターピンド層と前記インナーピンド層はともに、コバルト鉄合金からなり、
前記アウターピンド層は、前記反強磁性層と接し平均コバルト原子分率が65%以上75%以下であるコバルト鉄合金からなる反強磁性層隣接層と、前記非磁性中間層と接しコバルト原子分率が90%以上100%以下であるコバルト鉄合金からなる非磁性中間層アウター隣接層と、を有し、
前記インナーピンド層は、前記非磁性中間層と接しコバルト原子分率が90%以上100%以下であるコバルト鉄合金からなる非磁性中間層インナー隣接層と、前記スペーサ層と接しコバルト原子分率が10%以上70%以下であるコバルト鉄合金からなるスペーサ層隣接層と、を有する、磁気抵抗効果素子。 - 前記反強磁性層隣接層は、コバルト鉄合金からなる複数の層を有し、該複数の層に渡るコバルトの平均原子分率が65%以上75%以下である、請求項1に記載の磁気抵抗効果素子。
- 前記インナーピンド層は、前記非磁性中間層インナー隣接層と前記スペーサ層隣接層との間に、コバルト原子分率が10%以上70%以下であり、2〜5層の銅層が互いに離れた位置に挿入されているコバルト鉄合金中間層を有する、請求項1または2に記載の磁気抵抗効果素子。
- 前記媒体対向面に、前記記録媒体に記録されたデータを読み取る請求項1から3のいずれか1項に記載の磁気抵抗効果素子を有する薄膜磁気ヘッド。
- 請求項4に記載の薄膜磁気ヘッドを含み、前記記録媒体に対向して配置されるスライダと、
前記スライダを弾性的に支持するサスペンションと、
を有するヘッドジンバルアセンブリ。 - 請求項4に記載の薄膜磁気ヘッドを含み、回転駆動される円盤状の記録媒体に対向して配置されるスライダと、
前記スライダを支持するとともに前記記録媒体に対して位置決めする位置決め装置と、
を有するハードディスク装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004259777A JP4308109B2 (ja) | 2004-09-07 | 2004-09-07 | 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置 |
US11/218,719 US7715153B2 (en) | 2004-09-07 | 2005-09-06 | Magnetoresistive effect element having inner and outer pinned layers including a cobalt iron alloy |
Applications Claiming Priority (1)
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JP2004259777A JP4308109B2 (ja) | 2004-09-07 | 2004-09-07 | 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置 |
Publications (2)
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JP2006080144A JP2006080144A (ja) | 2006-03-23 |
JP4308109B2 true JP4308109B2 (ja) | 2009-08-05 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008021896A (ja) | 2006-07-14 | 2008-01-31 | Tdk Corp | Cpp構造のgmr素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
JP2008042103A (ja) | 2006-08-10 | 2008-02-21 | Tdk Corp | 交換結合膜、磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置 |
US7760475B2 (en) * | 2007-03-12 | 2010-07-20 | Tdk Corporation | Magneto-resistance effect element having free layer including magnetostriction reduction layer and thin-film magnetic head |
US8031441B2 (en) | 2007-05-11 | 2011-10-04 | Headway Technologies, Inc. | CPP device with an enhanced dR/R ratio |
US7855859B2 (en) | 2007-12-27 | 2010-12-21 | Tdk Corporation | Magnetoresistive element and magnetic head |
JP2011123944A (ja) | 2009-12-10 | 2011-06-23 | Hitachi Global Storage Technologies Netherlands Bv | Tmrリード・ヘッドの製造方法及びtmr積層体 |
US8907666B2 (en) | 2011-09-30 | 2014-12-09 | HGST Netherlands B.V. | Magnetic bias structure for magnetoresistive sensor having a scissor structure |
US9177572B2 (en) * | 2013-12-12 | 2015-11-03 | Tdk Corporation | Thermally-assisted magnetic recording method |
JP6586974B2 (ja) * | 2017-04-10 | 2019-10-09 | Tdk株式会社 | 磁気抵抗効果素子 |
CN112310272B (zh) * | 2019-07-25 | 2023-05-23 | 上海磁宇信息科技有限公司 | 磁性随机存储器的磁性隧道结结构 |
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US6738236B1 (en) * | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6122150A (en) * | 1998-11-09 | 2000-09-19 | International Business Machines Corporation | Antiparallel (AP) pinned spin valve sensor with giant magnetoresistive (GMR) enhancing layer |
US6226159B1 (en) * | 1999-06-25 | 2001-05-01 | International Business Machines Corporation | Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors |
US6295187B1 (en) * | 1999-06-29 | 2001-09-25 | International Business Machines Corporation | Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
US6252750B1 (en) * | 1999-07-23 | 2001-06-26 | International Business Machines Corporation | Read head with file resettable double antiparallel (AP) pinned spin valve sensor |
US6587317B2 (en) * | 2000-05-03 | 2003-07-01 | International Business Machines Corporation | Spin valve sensor having a pinned layer structure composed of cobalt iron vanadium (CoFeV) |
US6621665B1 (en) * | 2000-10-06 | 2003-09-16 | International Business Machines Corporation | Resettable dual pinned spin valve sensor with thermal stability and demagnetizing fields balanced by sense current and ferromagnetic fields |
US6580588B1 (en) * | 2000-10-06 | 2003-06-17 | International Business Machines Corporation | Resettable dual AP pinned valve sensor insensitive to sense current direction and having symmetrically balanced fields about a free layer |
JP3590006B2 (ja) | 2001-06-22 | 2004-11-17 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6709767B2 (en) * | 2001-07-31 | 2004-03-23 | Hitachi Global Storage Technologies Netherlands B.V. | In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
US6785102B2 (en) * | 2002-04-18 | 2004-08-31 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor with dual self-pinned AP pinned layer structures |
JP2003318460A (ja) | 2002-04-24 | 2003-11-07 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP2003324225A (ja) | 2002-04-26 | 2003-11-14 | Nec Corp | 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子 |
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- 2004-09-07 JP JP2004259777A patent/JP4308109B2/ja active Active
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- 2005-09-06 US US11/218,719 patent/US7715153B2/en active Active
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JP2006080144A (ja) | 2006-03-23 |
US20060203397A1 (en) | 2006-09-14 |
US7715153B2 (en) | 2010-05-11 |
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