JP4290553B2 - 画像化装置 - Google Patents
画像化装置 Download PDFInfo
- Publication number
- JP4290553B2 JP4290553B2 JP2003548035A JP2003548035A JP4290553B2 JP 4290553 B2 JP4290553 B2 JP 4290553B2 JP 2003548035 A JP2003548035 A JP 2003548035A JP 2003548035 A JP2003548035 A JP 2003548035A JP 4290553 B2 JP4290553 B2 JP 4290553B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- image
- radiation
- pattern
- patterning means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 19
- 238000000059 patterning Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 34
- 230000005855 radiation Effects 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 5
- 230000006870 function Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01204567 | 2001-11-27 | ||
| PCT/EP2002/013399 WO2003046662A1 (en) | 2001-11-27 | 2002-11-27 | Imaging apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005510860A JP2005510860A (ja) | 2005-04-21 |
| JP2005510860A5 JP2005510860A5 (enExample) | 2006-01-05 |
| JP4290553B2 true JP4290553B2 (ja) | 2009-07-08 |
Family
ID=8181314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003548035A Expired - Fee Related JP4290553B2 (ja) | 2001-11-27 | 2002-11-27 | 画像化装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7379579B2 (enExample) |
| EP (1) | EP1449032B1 (enExample) |
| JP (1) | JP4290553B2 (enExample) |
| KR (1) | KR100674245B1 (enExample) |
| CN (1) | CN1294455C (enExample) |
| DE (1) | DE60230663D1 (enExample) |
| WO (1) | WO2003046662A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1324138A3 (en) * | 2001-12-28 | 2007-12-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4929444B2 (ja) * | 2004-09-27 | 2012-05-09 | 国立大学法人東北大学 | パターン描画装置および方法 |
| US7177012B2 (en) * | 2004-10-18 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7403865B2 (en) * | 2004-12-28 | 2008-07-22 | Asml Netherlands B.V. | System and method for fault indication on a substrate in maskless applications |
| US7233384B2 (en) * | 2005-06-13 | 2007-06-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method, and device manufactured thereby for calibrating an imaging system with a sensor |
| WO2007094431A1 (ja) * | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| KR101538414B1 (ko) * | 2011-04-08 | 2015-07-22 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 프로그래밍 가능한 패터닝 디바이스 및 리소그래피 방법 |
| DE102011076083A1 (de) | 2011-05-18 | 2012-11-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Projektionsdisplay und Verfahren zum Anzeigen eines Gesamtbildes für Projektionsfreiformflächen oder verkippte Projektionsflächen |
| JP6676942B2 (ja) * | 2015-12-01 | 2020-04-08 | 株式会社ニコン | 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム |
| TWI724642B (zh) * | 2019-11-20 | 2021-04-11 | 墨子光電有限公司 | 微製像設備及其加工方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2049964A (en) * | 1979-05-01 | 1980-12-31 | Agfa Gevaert Nv | Simultaneously projecting two images of a subject in register |
| DE3406677A1 (de) * | 1984-02-24 | 1985-09-05 | Fa. Carl Zeiss, 7920 Heidenheim | Einrichtung zur kompensation der auswanderung eines laserstrahls |
| JP2501436B2 (ja) * | 1986-10-31 | 1996-05-29 | 富士通株式会社 | パタ−ンデ−タ検査装置 |
| JP2796316B2 (ja) * | 1988-10-24 | 1998-09-10 | 株式会社日立製作所 | 欠陥または異物の検査方法およびその装置 |
| JPH03265815A (ja) * | 1990-03-16 | 1991-11-26 | Kobe Steel Ltd | レーザビームによる描画装置 |
| US5142132A (en) * | 1990-11-05 | 1992-08-25 | Litel Instruments | Adaptive optic wafer stepper illumination system |
| WO1992011567A1 (en) * | 1990-12-21 | 1992-07-09 | Eastman Kodak Company | Method and apparatus for selectively varying the exposure of a photosensitive medium |
| US5229889A (en) * | 1991-12-10 | 1993-07-20 | Hughes Aircraft Company | Simple adaptive optical system |
| US5229872A (en) * | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| JP2710527B2 (ja) * | 1992-10-21 | 1998-02-10 | 大日本スクリーン製造株式会社 | 周期性パターンの検査装置 |
| JPH06250108A (ja) * | 1993-02-22 | 1994-09-09 | Hitachi Ltd | 補償光学装置とこれを用いた天体望遠鏡,光データリンク,レーザ加工機 |
| JPH088161A (ja) * | 1994-06-20 | 1996-01-12 | Mitsubishi Electric Corp | 転写シミュレータ装置 |
| US6133986A (en) * | 1996-02-28 | 2000-10-17 | Johnson; Kenneth C. | Microlens scanner for microlithography and wide-field confocal microscopy |
| JPH10177589A (ja) * | 1996-12-18 | 1998-06-30 | Mitsubishi Electric Corp | パターン比較検証装置、パターン比較検証方法およびパターン比較検証プログラムを記録した媒体 |
| JP4159139B2 (ja) * | 1998-05-14 | 2008-10-01 | リコーマイクロエレクトロニクス株式会社 | 光像形成装置、光加工装置並びに露光装置 |
| SE519397C2 (sv) * | 1998-12-16 | 2003-02-25 | Micronic Laser Systems Ab | System och metod för mikrolitografiskt ritande av högprecisionsmönster |
| JP3315658B2 (ja) * | 1998-12-28 | 2002-08-19 | キヤノン株式会社 | 投影装置および露光装置 |
| TWI282909B (en) * | 1999-12-23 | 2007-06-21 | Asml Netherlands Bv | Lithographic apparatus and a method for manufacturing a device |
| JP2001255664A (ja) * | 2000-03-14 | 2001-09-21 | Fuji Photo Film Co Ltd | 画像露光方法 |
| JP4364459B2 (ja) * | 2000-12-07 | 2009-11-18 | 富士通株式会社 | 光信号交換器の制御装置および制御方法 |
| JP2002367900A (ja) * | 2001-06-12 | 2002-12-20 | Yaskawa Electric Corp | 露光装置および露光方法 |
| KR20040047816A (ko) * | 2001-09-12 | 2004-06-05 | 마이크로닉 레이저 시스템즈 에이비 | 공간광변조기를 이용한 개선된 방법 및 장치 |
-
2002
- 2002-11-27 WO PCT/EP2002/013399 patent/WO2003046662A1/en not_active Ceased
- 2002-11-27 KR KR1020047007941A patent/KR100674245B1/ko not_active Expired - Fee Related
- 2002-11-27 JP JP2003548035A patent/JP4290553B2/ja not_active Expired - Fee Related
- 2002-11-27 CN CNB028235606A patent/CN1294455C/zh not_active Expired - Fee Related
- 2002-11-27 DE DE60230663T patent/DE60230663D1/de not_active Expired - Lifetime
- 2002-11-27 US US10/496,630 patent/US7379579B2/en not_active Expired - Fee Related
- 2002-11-27 EP EP02790447A patent/EP1449032B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7379579B2 (en) | 2008-05-27 |
| WO2003046662A1 (en) | 2003-06-05 |
| US20050062948A1 (en) | 2005-03-24 |
| EP1449032B1 (en) | 2008-12-31 |
| DE60230663D1 (de) | 2009-02-12 |
| KR100674245B1 (ko) | 2007-01-25 |
| CN1596387A (zh) | 2005-03-16 |
| CN1294455C (zh) | 2007-01-10 |
| JP2005510860A (ja) | 2005-04-21 |
| KR20040054804A (ko) | 2004-06-25 |
| EP1449032A1 (en) | 2004-08-25 |
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