KR100674245B1 - 이미징 장치 - Google Patents

이미징 장치 Download PDF

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Publication number
KR100674245B1
KR100674245B1 KR1020047007941A KR20047007941A KR100674245B1 KR 100674245 B1 KR100674245 B1 KR 100674245B1 KR 1020047007941 A KR1020047007941 A KR 1020047007941A KR 20047007941 A KR20047007941 A KR 20047007941A KR 100674245 B1 KR100674245 B1 KR 100674245B1
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KR
South Korea
Prior art keywords
radiation
pattern
substrate
patterning means
image
Prior art date
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Expired - Fee Related
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KR1020047007941A
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English (en)
Korean (ko)
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KR20040054804A (ko
Inventor
판데르마스트카렐디에데릭
블리커아르노얀
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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Publication of KR20040054804A publication Critical patent/KR20040054804A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020047007941A 2001-11-27 2002-11-27 이미징 장치 Expired - Fee Related KR100674245B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01204567.0 2001-11-27
EP01204567 2001-11-27
PCT/EP2002/013399 WO2003046662A1 (en) 2001-11-27 2002-11-27 Imaging apparatus

Publications (2)

Publication Number Publication Date
KR20040054804A KR20040054804A (ko) 2004-06-25
KR100674245B1 true KR100674245B1 (ko) 2007-01-25

Family

ID=8181314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047007941A Expired - Fee Related KR100674245B1 (ko) 2001-11-27 2002-11-27 이미징 장치

Country Status (7)

Country Link
US (1) US7379579B2 (enExample)
EP (1) EP1449032B1 (enExample)
JP (1) JP4290553B2 (enExample)
KR (1) KR100674245B1 (enExample)
CN (1) CN1294455C (enExample)
DE (1) DE60230663D1 (enExample)
WO (1) WO2003046662A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1324138A3 (en) * 2001-12-28 2007-12-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4929444B2 (ja) * 2004-09-27 2012-05-09 国立大学法人東北大学 パターン描画装置および方法
US7177012B2 (en) * 2004-10-18 2007-02-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403865B2 (en) * 2004-12-28 2008-07-22 Asml Netherlands B.V. System and method for fault indication on a substrate in maskless applications
US7233384B2 (en) * 2005-06-13 2007-06-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method, and device manufactured thereby for calibrating an imaging system with a sensor
WO2007094431A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
KR101538414B1 (ko) * 2011-04-08 2015-07-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 프로그래밍 가능한 패터닝 디바이스 및 리소그래피 방법
DE102011076083A1 (de) 2011-05-18 2012-11-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Projektionsdisplay und Verfahren zum Anzeigen eines Gesamtbildes für Projektionsfreiformflächen oder verkippte Projektionsflächen
JP6676942B2 (ja) * 2015-12-01 2020-04-08 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
TWI724642B (zh) * 2019-11-20 2021-04-11 墨子光電有限公司 微製像設備及其加工方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2049964A (en) * 1979-05-01 1980-12-31 Agfa Gevaert Nv Simultaneously projecting two images of a subject in register
DE3406677A1 (de) * 1984-02-24 1985-09-05 Fa. Carl Zeiss, 7920 Heidenheim Einrichtung zur kompensation der auswanderung eines laserstrahls
JP2501436B2 (ja) * 1986-10-31 1996-05-29 富士通株式会社 パタ−ンデ−タ検査装置
JP2796316B2 (ja) * 1988-10-24 1998-09-10 株式会社日立製作所 欠陥または異物の検査方法およびその装置
JPH03265815A (ja) * 1990-03-16 1991-11-26 Kobe Steel Ltd レーザビームによる描画装置
US5142132A (en) * 1990-11-05 1992-08-25 Litel Instruments Adaptive optic wafer stepper illumination system
WO1992011567A1 (en) * 1990-12-21 1992-07-09 Eastman Kodak Company Method and apparatus for selectively varying the exposure of a photosensitive medium
US5229889A (en) * 1991-12-10 1993-07-20 Hughes Aircraft Company Simple adaptive optical system
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JP2710527B2 (ja) * 1992-10-21 1998-02-10 大日本スクリーン製造株式会社 周期性パターンの検査装置
JPH06250108A (ja) * 1993-02-22 1994-09-09 Hitachi Ltd 補償光学装置とこれを用いた天体望遠鏡，光データリンク，レーザ加工機
JPH088161A (ja) * 1994-06-20 1996-01-12 Mitsubishi Electric Corp 転写シミュレータ装置
US6133986A (en) * 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
JPH10177589A (ja) * 1996-12-18 1998-06-30 Mitsubishi Electric Corp パターン比較検証装置、パターン比較検証方法およびパターン比較検証プログラムを記録した媒体
JP4159139B2 (ja) * 1998-05-14 2008-10-01 リコーマイクロエレクトロニクス株式会社 光像形成装置、光加工装置並びに露光装置
SE519397C2 (sv) * 1998-12-16 2003-02-25 Micronic Laser Systems Ab System och metod för mikrolitografiskt ritande av högprecisionsmönster
JP3315658B2 (ja) * 1998-12-28 2002-08-19 キヤノン株式会社 投影装置および露光装置
TWI282909B (en) * 1999-12-23 2007-06-21 Asml Netherlands Bv Lithographic apparatus and a method for manufacturing a device
JP2001255664A (ja) * 2000-03-14 2001-09-21 Fuji Photo Film Co Ltd 画像露光方法
JP4364459B2 (ja) * 2000-12-07 2009-11-18 富士通株式会社 光信号交換器の制御装置および制御方法
JP2002367900A (ja) * 2001-06-12 2002-12-20 Yaskawa Electric Corp 露光装置および露光方法
KR20040047816A (ko) * 2001-09-12 2004-06-05 마이크로닉 레이저 시스템즈 에이비 공간광변조기를 이용한 개선된 방법 및 장치

Also Published As

Publication number Publication date
US7379579B2 (en) 2008-05-27
WO2003046662A1 (en) 2003-06-05
US20050062948A1 (en) 2005-03-24
EP1449032B1 (en) 2008-12-31
JP4290553B2 (ja) 2009-07-08
DE60230663D1 (de) 2009-02-12
CN1596387A (zh) 2005-03-16
CN1294455C (zh) 2007-01-10
JP2005510860A (ja) 2005-04-21
KR20040054804A (ko) 2004-06-25
EP1449032A1 (en) 2004-08-25

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