JP4286321B2 - 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ - Google Patents

完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ Download PDF

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JP4286321B2
JP4286321B2 JP54252197A JP54252197A JP4286321B2 JP 4286321 B2 JP4286321 B2 JP 4286321B2 JP 54252197 A JP54252197 A JP 54252197A JP 54252197 A JP54252197 A JP 54252197A JP 4286321 B2 JP4286321 B2 JP 4286321B2
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trench
region
gate
source
body region
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Japanese (ja)
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JP2000511353A (ja
Inventor
ウィリアムズ、リチャード・ケイ
フロイド、ブライアン・エイチ
グラボウスキー、ウェイン
ダーウィッシュ、モハメッド
チャング、マイク・エフ
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Vishay Siliconix Inc
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Siliconix Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP54252197A 1996-05-22 1997-05-21 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ Expired - Fee Related JP4286321B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US651,232 1996-05-22
US08/651,232 US5998834A (en) 1996-05-22 1996-05-22 Long channel trench-gated power MOSFET having fully depleted body region
PCT/US1997/008187 WO1997044828A1 (en) 1996-05-22 1997-05-21 Long channel trench-gated power mosfet having fully depleted body region

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008289444A Division JP4981013B2 (ja) 1996-05-22 2008-11-12 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
JP2000511353A JP2000511353A (ja) 2000-08-29
JP4286321B2 true JP4286321B2 (ja) 2009-06-24

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JP54252197A Expired - Fee Related JP4286321B2 (ja) 1996-05-22 1997-05-21 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ
JP2008289444A Expired - Fee Related JP4981013B2 (ja) 1996-05-22 2008-11-12 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ

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Country Status (7)

Country Link
US (1) US5998834A (enExample)
EP (1) EP0902980B1 (enExample)
JP (2) JP4286321B2 (enExample)
KR (1) KR100381845B1 (enExample)
AU (1) AU3125797A (enExample)
DE (1) DE69739058D1 (enExample)
WO (1) WO1997044828A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009060136A (ja) * 1996-05-22 2009-03-19 Siliconix Inc 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ
US7645711B2 (en) 2005-01-24 2010-01-12 Kabushiki Kaisha Toshiba Semiconductor device fabrication method

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DE69941769D1 (en) * 1998-02-02 2010-01-21 Cree Inc Sic transistor
US6104068A (en) * 1998-09-01 2000-08-15 Micron Technology, Inc. Structure and method for improved signal processing
US6320222B1 (en) * 1998-09-01 2001-11-20 Micron Technology, Inc. Structure and method for reducing threshold voltage variations due to dopant fluctuations
GB9820904D0 (en) * 1998-09-26 1998-11-18 Koninkl Philips Electronics Nv Bi-directional semiconductor switch and switch circuit for battery-powered equipment
US6855983B1 (en) * 1998-11-10 2005-02-15 Toyota Jidosha Kabushiki Kaisha Semiconductor device having reduced on resistance
JP3494063B2 (ja) * 1999-02-24 2004-02-03 トヨタ自動車株式会社 半導体装置
US6777745B2 (en) * 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
US20060170053A1 (en) * 2003-05-09 2006-08-03 Yee-Chia Yeo Accumulation mode multiple gate transistor
JP3744513B2 (ja) * 2003-05-30 2006-02-15 トヨタ自動車株式会社 ダイオード
KR100616159B1 (ko) * 2005-06-29 2006-08-28 주식회사 한국오도텍 비닐팩 방향제 및 그 제조방법
US9054183B2 (en) * 2012-07-13 2015-06-09 United Silicon Carbide, Inc. Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor
US9696736B2 (en) 2013-03-15 2017-07-04 Fairchild Semiconductor Corporation Two-terminal current limiter and apparatus thereof
US9679890B2 (en) * 2013-08-09 2017-06-13 Fairchild Semiconductor Corporation Junction-less insulated gate current limiter device
US9735147B2 (en) * 2014-09-15 2017-08-15 Fairchild Semiconductor Corporation Fast and stable ultra low drop-out (LDO) voltage clamp device
JP6478316B2 (ja) 2014-11-10 2019-03-06 ローム株式会社 トレンチゲート構造を備えた半導体装置およびその製造方法
DE102014119395B4 (de) * 2014-12-22 2022-10-06 Infineon Technologies Ag Transistorbauelement mit Feldelektrode
DE102018106670B4 (de) * 2018-03-21 2025-02-06 Infineon Technologies Ag Siliziumcarbid-Halbleitervorrichtung mit Graben-Gatestruktur und einem Sourcegebiet in einem oberen Bereich eines Mesaabschnitts
US10510836B1 (en) * 2018-08-08 2019-12-17 Infineon Technologies Austria Ag Gate trench device with oxygen inserted si-layers
JP7224823B2 (ja) * 2018-09-19 2023-02-20 キヤノン株式会社 光検出装置
JP7063218B2 (ja) * 2018-09-27 2022-05-09 株式会社デンソー 炭化珪素半導体装置
US11728422B2 (en) * 2019-11-14 2023-08-15 Stmicroelectronics S.R.L. Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
IT202000015076A1 (it) 2020-06-23 2021-12-23 St Microelectronics Srl Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione
CN113838936B (zh) 2020-06-23 2025-10-17 意法半导体股份有限公司 具有改善短路性能的4H-SiC电子器件及其制造方法
US12495577B2 (en) 2022-08-17 2025-12-09 Analog Devices, Inc. Self-aligned silicide gate for discrete shielded-gate trench power MOSFET

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2859351B2 (ja) * 1990-02-07 1999-02-17 三菱電機株式会社 半導体装置の製造方法
JP2837033B2 (ja) * 1992-07-21 1998-12-14 三菱電機株式会社 半導体装置及びその製造方法
JP2561413B2 (ja) * 1993-02-23 1996-12-11 日産自動車株式会社 半導体装置
JPH07202182A (ja) * 1993-12-28 1995-08-04 Nissan Motor Co Ltd 半導体装置
JP3481287B2 (ja) * 1994-02-24 2003-12-22 三菱電機株式会社 半導体装置の製造方法
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5998834A (en) * 1996-05-22 1999-12-07 Siliconix Incorporated Long channel trench-gated power MOSFET having fully depleted body region

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009060136A (ja) * 1996-05-22 2009-03-19 Siliconix Inc 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーｍｏｓｆｅｔ
US7645711B2 (en) 2005-01-24 2010-01-12 Kabushiki Kaisha Toshiba Semiconductor device fabrication method

Also Published As

Publication number Publication date
AU3125797A (en) 1997-12-09
JP2009060136A (ja) 2009-03-19
EP0902980A1 (en) 1999-03-24
EP0902980B1 (en) 2008-10-22
DE69739058D1 (de) 2008-12-04
KR100381845B1 (ko) 2003-07-16
JP4981013B2 (ja) 2012-07-18
US5998834A (en) 1999-12-07
WO1997044828A1 (en) 1997-11-27
JP2000511353A (ja) 2000-08-29
EP0902980A4 (en) 1999-06-16
KR20000016027A (ko) 2000-03-25

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