JP4284944B2 - 窒化ガリウム系半導体レーザ素子の製造方法 - Google Patents

窒化ガリウム系半導体レーザ素子の製造方法 Download PDF

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JP4284944B2
JP4284944B2 JP2002243158A JP2002243158A JP4284944B2 JP 4284944 B2 JP4284944 B2 JP 4284944B2 JP 2002243158 A JP2002243158 A JP 2002243158A JP 2002243158 A JP2002243158 A JP 2002243158A JP 4284944 B2 JP4284944 B2 JP 4284944B2
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gallium nitride
hydrazine
grown
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JP2004087565A5 (enExample
JP2004087565A (ja
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中島　　博
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Sony Corp
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JP2002243158A 2002-08-23 2002-08-23 窒化ガリウム系半導体レーザ素子の製造方法 Expired - Fee Related JP4284944B2 (ja)

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JP2002243158A JP4284944B2 (ja) 2002-08-23 2002-08-23 窒化ガリウム系半導体レーザ素子の製造方法

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JP2002243158A JP4284944B2 (ja) 2002-08-23 2002-08-23 窒化ガリウム系半導体レーザ素子の製造方法

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JP2004087565A JP2004087565A (ja) 2004-03-18
JP2004087565A5 JP2004087565A5 (enExample) 2005-10-20
JP4284944B2 true JP4284944B2 (ja) 2009-06-24

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4962829B2 (ja) * 2004-08-30 2012-06-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP3816942B2 (ja) 2004-10-27 2006-08-30 三菱電機株式会社 半導体素子の製造方法
JP4994656B2 (ja) * 2005-12-20 2012-08-08 三洋電機株式会社 光半導体素子の製造方法
JP2008078186A (ja) * 2006-09-19 2008-04-03 Mitsubishi Chemicals Corp 窒化物系化合物半導体の結晶成長方法
JP5218117B2 (ja) * 2008-03-18 2013-06-26 三菱電機株式会社 窒化物半導体積層構造及び光半導体装置並びにその製造方法
JP5200829B2 (ja) * 2008-09-30 2013-06-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP2011151074A (ja) * 2010-01-19 2011-08-04 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
JP5896346B2 (ja) * 2015-03-16 2016-03-30 住友電気工業株式会社 炭化珪素半導体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316151A (ja) * 1995-05-17 1996-11-29 Fujitsu Ltd 半導体の製造方法
JPH09309796A (ja) * 1996-05-23 1997-12-02 Sony Corp 窒素系ｉｉｉ−ｖ族化合物半導体の成長方法
JP3458625B2 (ja) * 1996-11-13 2003-10-20 ソニー株式会社 半導体の成長方法
JP2001144325A (ja) * 1999-11-12 2001-05-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法および半導体素子の製造方法
JP3561243B2 (ja) * 2001-06-25 2004-09-02 シャープ株式会社 化合物半導体の成長方法及び化合物半導体発光素子

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