JP4275880B2 - 半導体装置及びそれを用いた電子装置 - Google Patents

半導体装置及びそれを用いた電子装置 Download PDF

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Publication number
JP4275880B2
JP4275880B2 JP2001341904A JP2001341904A JP4275880B2 JP 4275880 B2 JP4275880 B2 JP 4275880B2 JP 2001341904 A JP2001341904 A JP 2001341904A JP 2001341904 A JP2001341904 A JP 2001341904A JP 4275880 B2 JP4275880 B2 JP 4275880B2
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voltage
semiconductor device
support substrate
power supply
circuit
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Japanese (ja)
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JP2003142575A5 (enExample
JP2003142575A (ja
Inventor
秋山　　登
政光 稲葉
篤雄 渡辺
峰弘 根本
康行 小嶋
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Hitachi Ltd
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Hitachi Ltd
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  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2001341904A 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置 Expired - Fee Related JP4275880B2 (ja)

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JP2001341904A JP4275880B2 (ja) 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置

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JP2001341904A JP4275880B2 (ja) 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置

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JP2003142575A JP2003142575A (ja) 2003-05-16
JP2003142575A5 JP2003142575A5 (enExample) 2005-01-27
JP4275880B2 true JP4275880B2 (ja) 2009-06-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361031A (zh) * 2011-10-19 2012-02-22 电子科技大学 一种用于soi高压集成电路的半导体器件

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005027369A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises
JP5040135B2 (ja) * 2006-03-24 2012-10-03 株式会社日立製作所 誘電体分離型半導体装置及びその製造方法
JP5261929B2 (ja) * 2006-12-15 2013-08-14 株式会社デンソー 半導体装置
JP5256750B2 (ja) * 2008-01-25 2013-08-07 株式会社デンソー 半導体装置
JP5565309B2 (ja) * 2010-12-29 2014-08-06 三菱電機株式会社 半導体装置
CN103489865B (zh) * 2013-09-16 2015-10-21 电子科技大学 一种横向集成soi半导体功率器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361031A (zh) * 2011-10-19 2012-02-22 电子科技大学 一种用于soi高压集成电路的半导体器件

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