JP2003142575A5 - - Google Patents

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Publication number
JP2003142575A5
JP2003142575A5 JP2001341904A JP2001341904A JP2003142575A5 JP 2003142575 A5 JP2003142575 A5 JP 2003142575A5 JP 2001341904 A JP2001341904 A JP 2001341904A JP 2001341904 A JP2001341904 A JP 2001341904A JP 2003142575 A5 JP2003142575 A5 JP 2003142575A5
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JP
Japan
Prior art keywords
voltage
semiconductor device
generated
surge
positive
Prior art date
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Application number
JP2001341904A
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English (en)
Japanese (ja)
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JP2003142575A (ja
JP4275880B2 (ja
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Application filed filed Critical
Priority to JP2001341904A priority Critical patent/JP4275880B2/ja
Priority claimed from JP2001341904A external-priority patent/JP4275880B2/ja
Publication of JP2003142575A publication Critical patent/JP2003142575A/ja
Publication of JP2003142575A5 publication Critical patent/JP2003142575A5/ja
Application granted granted Critical
Publication of JP4275880B2 publication Critical patent/JP4275880B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001341904A 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置 Expired - Fee Related JP4275880B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001341904A JP4275880B2 (ja) 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001341904A JP4275880B2 (ja) 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置

Publications (3)

Publication Number Publication Date
JP2003142575A JP2003142575A (ja) 2003-05-16
JP2003142575A5 true JP2003142575A5 (enExample) 2005-01-27
JP4275880B2 JP4275880B2 (ja) 2009-06-10

Family

ID=19155852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001341904A Expired - Fee Related JP4275880B2 (ja) 2001-11-07 2001-11-07 半導体装置及びそれを用いた電子装置

Country Status (1)

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JP (1) JP4275880B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005027369A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises
JP5040135B2 (ja) * 2006-03-24 2012-10-03 株式会社日立製作所 誘電体分離型半導体装置及びその製造方法
JP5261929B2 (ja) * 2006-12-15 2013-08-14 株式会社デンソー 半導体装置
JP5256750B2 (ja) * 2008-01-25 2013-08-07 株式会社デンソー 半導体装置
JP5565309B2 (ja) * 2010-12-29 2014-08-06 三菱電機株式会社 半導体装置
CN102361031B (zh) * 2011-10-19 2013-07-17 电子科技大学 一种用于soi高压集成电路的半导体器件
CN103489865B (zh) * 2013-09-16 2015-10-21 电子科技大学 一种横向集成soi半导体功率器件

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