JP4275346B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4275346B2
JP4275346B2 JP2002064225A JP2002064225A JP4275346B2 JP 4275346 B2 JP4275346 B2 JP 4275346B2 JP 2002064225 A JP2002064225 A JP 2002064225A JP 2002064225 A JP2002064225 A JP 2002064225A JP 4275346 B2 JP4275346 B2 JP 4275346B2
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Prior art keywords
film
silicon
resist stripping
resist
insulating film
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JP2002064225A
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Japanese (ja)
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JP2003264195A5 (enrdf_load_stackoverflow
JP2003264195A (ja
Inventor
信洋 田中
雅博 片山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2003264195A5 publication Critical patent/JP2003264195A5/ja
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002064225A 2002-03-08 2002-03-08 半導体装置の作製方法 Expired - Fee Related JP4275346B2 (ja)

Priority Applications (1)

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JP2002064225A JP4275346B2 (ja) 2002-03-08 2002-03-08 半導体装置の作製方法

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JP2002064225A JP4275346B2 (ja) 2002-03-08 2002-03-08 半導体装置の作製方法

Publications (3)

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JP2003264195A JP2003264195A (ja) 2003-09-19
JP2003264195A5 JP2003264195A5 (enrdf_load_stackoverflow) 2005-08-25
JP4275346B2 true JP4275346B2 (ja) 2009-06-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018184279A1 (zh) * 2017-04-05 2018-10-11 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
US10181484B2 (en) 2017-04-05 2019-01-15 Wuhan China Star Optoelectronics Technology Co., Ltd. TFT substrate manufacturing method and TFT substrate

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134823A (ja) * 2003-10-31 2005-05-26 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーンにおけるマイクロレンズアレイシートの製造方法
JP4566547B2 (ja) * 2003-11-13 2010-10-20 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
CN100378929C (zh) * 2004-12-13 2008-04-02 友达光电股份有限公司 薄膜晶体管元件的制造方法
GB2448174B (en) * 2007-04-04 2009-12-09 Cambridge Display Tech Ltd Organic thin film transistors
JP4688966B2 (ja) * 2010-07-06 2011-05-25 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
JP2012222171A (ja) * 2011-04-11 2012-11-12 Hitachi Ltd 表示装置およびその製造方法
JP2013080040A (ja) * 2011-10-03 2013-05-02 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、及び電子機器
CN106992116B (zh) * 2017-04-20 2019-10-11 京东方科技集团股份有限公司 制造半导体器件的方法、阵列基板和显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3465467B2 (ja) * 1996-01-25 2003-11-10 ミツミ電機株式会社 レジスト剥離装置の制御方法
JP3538084B2 (ja) * 1999-09-17 2004-06-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001308342A (ja) * 2000-02-15 2001-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法および液晶表示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018184279A1 (zh) * 2017-04-05 2018-10-11 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
US10181484B2 (en) 2017-04-05 2019-01-15 Wuhan China Star Optoelectronics Technology Co., Ltd. TFT substrate manufacturing method and TFT substrate

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Publication number Publication date
JP2003264195A (ja) 2003-09-19

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