JP4265269B2 - ＳｉＣ単結晶製造炉 - Google Patents

ＳｉＣ単結晶製造炉 Download PDF

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Publication number
JP4265269B2
JP4265269B2 JP2003115967A JP2003115967A JP4265269B2 JP 4265269 B2 JP4265269 B2 JP 4265269B2 JP 2003115967 A JP2003115967 A JP 2003115967A JP 2003115967 A JP2003115967 A JP 2003115967A JP 4265269 B2 JP4265269 B2 JP 4265269B2
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melt
single crystal
sic single
temperature
cover
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Japanese (ja)
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JP2004323247A (ja
JP2004323247A5 (enExample
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秀光 坂元
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Toyota Motor Corp
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Toyota Motor Corp
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JP2003115967A 2003-04-21 2003-04-21 ＳｉＣ単結晶製造炉 Expired - Fee Related JP4265269B2 (ja)

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JP2003115967A JP4265269B2 (ja) 2003-04-21 2003-04-21 ＳｉＣ単結晶製造炉

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JP2003115967A JP4265269B2 (ja) 2003-04-21 2003-04-21 ＳｉＣ単結晶製造炉

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JP2004323247A JP2004323247A (ja) 2004-11-18
JP2004323247A5 JP2004323247A5 (enExample) 2006-05-18
JP4265269B2 true JP4265269B2 (ja) 2009-05-20

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4736401B2 (ja) * 2004-11-02 2011-07-27 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP4830496B2 (ja) * 2006-01-12 2011-12-07 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5304600B2 (ja) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置及び製造方法
JP5439353B2 (ja) * 2010-12-27 2014-03-12 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置及びそれに用いられる坩堝
JP5517913B2 (ja) 2010-12-27 2014-06-11 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置、製造装置に用いられる治具、及びＳｉＣ単結晶の製造方法
JP5528396B2 (ja) * 2011-06-20 2014-06-25 新日鐵住金株式会社 溶液成長法によるＳｉＣ単結晶の製造装置、当該製造装置を用いたＳｉＣ単結晶の製造方法及び当該製造装置に用いられる坩堝
JP5801730B2 (ja) * 2012-01-20 2015-10-28 トヨタ自動車株式会社 単結晶の製造装置に用いられる種結晶保持軸及び単結晶の製造方法
JP6424806B2 (ja) * 2015-12-01 2018-11-21 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法

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