JP4252634B2 - 薄膜の加熱処理方法 - Google Patents

薄膜の加熱処理方法 Download PDF

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Publication number
JP4252634B2
JP4252634B2 JP07442597A JP7442597A JP4252634B2 JP 4252634 B2 JP4252634 B2 JP 4252634B2 JP 07442597 A JP07442597 A JP 07442597A JP 7442597 A JP7442597 A JP 7442597A JP 4252634 B2 JP4252634 B2 JP 4252634B2
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Japan
Prior art keywords
light
region
lamp
silicon film
wavelength
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Expired - Fee Related
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JP07442597A
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English (en)
Japanese (ja)
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JPH10256170A5 (enExample
JPH10256170A (ja
Inventor
舜平 山崎
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP07442597A priority Critical patent/JP4252634B2/ja
Priority to US09/038,640 priority patent/US6423585B1/en
Publication of JPH10256170A publication Critical patent/JPH10256170A/ja
Priority to US10/141,206 priority patent/US7214574B2/en
Publication of JPH10256170A5 publication Critical patent/JPH10256170A5/ja
Priority to US11/325,513 priority patent/US7410850B2/en
Application granted granted Critical
Publication of JP4252634B2 publication Critical patent/JP4252634B2/ja
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  • Recrystallisation Techniques (AREA)
JP07442597A 1997-03-11 1997-03-11 薄膜の加熱処理方法 Expired - Fee Related JP4252634B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07442597A JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法
US09/038,640 US6423585B1 (en) 1997-03-11 1998-03-10 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US10/141,206 US7214574B2 (en) 1997-03-11 2002-05-07 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US11/325,513 US7410850B2 (en) 1997-03-11 2006-01-05 Heating treatment device, heating treatment method and fabrication method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07442597A JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005255663A Division JP2006032982A (ja) 2005-09-02 2005-09-02 薄膜の加熱処理方法

Publications (3)

Publication Number Publication Date
JPH10256170A JPH10256170A (ja) 1998-09-25
JPH10256170A5 JPH10256170A5 (enExample) 2005-02-10
JP4252634B2 true JP4252634B2 (ja) 2009-04-08

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JP07442597A Expired - Fee Related JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2792774B1 (fr) * 1999-04-26 2003-08-01 Joint Industrial Processors For Electronics Procede et dispositif de traitement d'un materiau par rayonnement electromagnetique et sous atmosphere controlee
JP4788610B2 (ja) 2007-01-17 2011-10-05 東京エレクトロン株式会社 加熱装置、塗布、現像装置、加熱方法及び記憶媒体
JP2008283143A (ja) * 2007-05-14 2008-11-20 Ulvac Japan Ltd 処理装置、トランジスタ製造方法
JP2014027252A (ja) * 2012-06-19 2014-02-06 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法

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JPH10256170A (ja) 1998-09-25

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