JPH10256170A5 - - Google Patents

Info

Publication number
JPH10256170A5
JPH10256170A5 JP1997074425A JP7442597A JPH10256170A5 JP H10256170 A5 JPH10256170 A5 JP H10256170A5 JP 1997074425 A JP1997074425 A JP 1997074425A JP 7442597 A JP7442597 A JP 7442597A JP H10256170 A5 JPH10256170 A5 JP H10256170A5
Authority
JP
Japan
Prior art keywords
thin film
lamp
infrared
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997074425A
Other languages
English (en)
Japanese (ja)
Other versions
JP4252634B2 (ja
JPH10256170A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP07442597A priority Critical patent/JP4252634B2/ja
Priority claimed from JP07442597A external-priority patent/JP4252634B2/ja
Priority to US09/038,640 priority patent/US6423585B1/en
Publication of JPH10256170A publication Critical patent/JPH10256170A/ja
Priority to US10/141,206 priority patent/US7214574B2/en
Publication of JPH10256170A5 publication Critical patent/JPH10256170A5/ja
Priority to US11/325,513 priority patent/US7410850B2/en
Application granted granted Critical
Publication of JP4252634B2 publication Critical patent/JP4252634B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP07442597A 1997-03-11 1997-03-11 薄膜の加熱処理方法 Expired - Fee Related JP4252634B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07442597A JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法
US09/038,640 US6423585B1 (en) 1997-03-11 1998-03-10 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US10/141,206 US7214574B2 (en) 1997-03-11 2002-05-07 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US11/325,513 US7410850B2 (en) 1997-03-11 2006-01-05 Heating treatment device, heating treatment method and fabrication method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07442597A JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005255663A Division JP2006032982A (ja) 2005-09-02 2005-09-02 薄膜の加熱処理方法

Publications (3)

Publication Number Publication Date
JPH10256170A JPH10256170A (ja) 1998-09-25
JPH10256170A5 true JPH10256170A5 (enExample) 2005-02-10
JP4252634B2 JP4252634B2 (ja) 2009-04-08

Family

ID=13546849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07442597A Expired - Fee Related JP4252634B2 (ja) 1997-03-11 1997-03-11 薄膜の加熱処理方法

Country Status (1)

Country Link
JP (1) JP4252634B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2792774B1 (fr) * 1999-04-26 2003-08-01 Joint Industrial Processors For Electronics Procede et dispositif de traitement d'un materiau par rayonnement electromagnetique et sous atmosphere controlee
JP4788610B2 (ja) 2007-01-17 2011-10-05 東京エレクトロン株式会社 加熱装置、塗布、現像装置、加熱方法及び記憶媒体
JP2008283143A (ja) * 2007-05-14 2008-11-20 Ulvac Japan Ltd 処理装置、トランジスタ製造方法
JP2014027252A (ja) * 2012-06-19 2014-02-06 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法

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