JP4248882B2 - 半導体デバイスのピンチ活性領域における二珪化チタンの抵抗の改善方法 - Google Patents
半導体デバイスのピンチ活性領域における二珪化チタンの抵抗の改善方法 Download PDFInfo
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- JP4248882B2 JP4248882B2 JP2002586392A JP2002586392A JP4248882B2 JP 4248882 B2 JP4248882 B2 JP 4248882B2 JP 2002586392 A JP2002586392 A JP 2002586392A JP 2002586392 A JP2002586392 A JP 2002586392A JP 4248882 B2 JP4248882 B2 JP 4248882B2
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- 238000000034 method Methods 0.000 title claims description 107
- 239000004065 semiconductor Substances 0.000 title claims description 28
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 title claims description 19
- 229910021352 titanium disilicide Inorganic materials 0.000 title claims description 19
- 230000008569 process Effects 0.000 claims description 77
- 239000010936 titanium Substances 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical group FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910008484 TiSi Inorganic materials 0.000 description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 101000716729 Homo sapiens Kit ligand Proteins 0.000 description 1
- 102100020880 Kit ligand Human genes 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
複数のスペーサ及び複数のフィールド酸化膜によって境界付けられている少なくとも一つの活性領域を有するシリコン基板上に酸化物層を堆積するステップと、
レジスト層を前記酸化物層上に堆積するステップと、
前記レジスト層をパターニングするステップと、
前記パターニングされた前記レジスト層を使用して、反応性イオンエッチングプロセスによって、前記酸化物層において開口部をエッチングして前記少なくとも一つの活性領域を境界付けるステップと、
ガス成分として少なくとも酸素を有するマイクロ波プラズマによってドライストリッププロセスにおいて前記レジスト層を除去するステップと、
前記少なくとも一つの活性領域の上、及び前記酸化物層の上に、チタンを有するメタル層を堆積するステップと、
前記メタル層が堆積された後に、第一のアニーリングステップ、選択ウェットエッチングステップ、及び第このアニーリングステップを有する自己整合プロセスによって、二珪化チタンを有する前記相互接続領域を形成するステップとを有する方法において、
前記ドライストリッププロセスが、前記開口部がエッチングされた後で且つ前記メタル層が堆積される直前に行われ、前記ドライストリッププロセスの前記マイクロ波プラズマが、前記少なくとも一つの活性領域の表面をエッチング及び洗浄すると共に、前記複数のスペーサを等方性エッチングするために、少なくともフッ化物を有する第二のガス成分を有することを特徴とする方法に関する。
Claims (4)
- シリコン基板上に半導体デバイスを製造する方法であって、前記半導体デバイスは、前記シリコン基板において複数のスペーサ及び複数のフィールド酸化膜によって境界付けられる少なくとも一つの活性領域を有し、前記少なくとも一つの活性領域は更に、二珪化チタンを有する相互接続領域にコンタクトするコンタクト領域となるように構成され、
複数のスペーサ及び複数のフィールド酸化膜によって境界付けられている少なくとも一つの活性領域を有するシリコン基板上に酸化物層を堆積するステップと、
レジスト層を前記酸化物層上に堆積するステップと、
前記レジスト層をパターニングするステップと、
前記パターニングされたレジスト層を使用して、反応性イオンエッチングプロセスによって、前記酸化物層において開口部をエッチングして前記少なくとも一つの活性領域を境界付けるステップと、
ガス成分として少なくとも酸素を有するマイクロ波プラズマによってドライストリッププロセスにおいて前記レジスト層を除去するステップと、
前記少なくとも一つの活性領域の上、及び前記酸化物層の上に、チタンを有するメタル層を堆積するステップと、
前記メタル層が堆積された後に、第一のアニーリングステップ、選択ウェットエッチングステップ、及び第二のアニーリングステップを有する自己整合プロセスによって、二珪化チタンを有する前記相互接続領域を形成するステップとを有する方法において、
前記ドライストリッププロセスが、前記開口部がエッチングされた後で且つ前記メタル層が堆積される直前に行われ、前記ドライストリッププロセスの前記マイクロ波プラズマが、前記少なくとも一つの活性領域の表面をエッチング及び洗浄すると共に、前記複数のスペ-サを等方性エッチングするために、少なくともフッ化物を有する第二のガス成分を有することを特徴とする方法。 - 前記第二のガス成分がカーボン・テトラ・フルオライドCF4であることを特徴とする請求項1に記載の方法。
- 前記少なくとも一つの活性領域の幅が0.35μm又はそれよりも短いこと、好ましくは0.25μm以下であることを特徴とする請求項1又は2に記載の方法。
- 前記複数のスペーサの各々がシリコン窒化物サイドスペーサを有することを特徴とする請求項1乃至3の何れか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01201538 | 2001-04-26 | ||
PCT/IB2002/001344 WO2002089191A2 (en) | 2001-04-26 | 2002-04-12 | Improvement of titanium disilicide resistance in narrow active regions of semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004528715A JP2004528715A (ja) | 2004-09-16 |
JP4248882B2 true JP4248882B2 (ja) | 2009-04-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002586392A Expired - Fee Related JP4248882B2 (ja) | 2001-04-26 | 2002-04-12 | 半導体デバイスのピンチ活性領域における二珪化チタンの抵抗の改善方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6630399B2 (ja) |
EP (1) | EP1419522A2 (ja) |
JP (1) | JP4248882B2 (ja) |
KR (1) | KR20030095953A (ja) |
CN (1) | CN1255863C (ja) |
WO (1) | WO2002089191A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI241652B (en) * | 2002-08-13 | 2005-10-11 | Lam Res Corp | Method for hard mask CD trim |
US6825529B2 (en) * | 2002-12-12 | 2004-11-30 | International Business Machines Corporation | Stress inducing spacers |
KR100732860B1 (ko) * | 2004-12-14 | 2007-06-27 | 동부일렉트로닉스 주식회사 | 반도체 기판 상의 산화막 식각 후 애싱 방법 |
CN104538439A (zh) * | 2015-01-19 | 2015-04-22 | 北京大学 | 一种耐高温欧姆接触电极结构及其加工方法 |
CN106033718A (zh) * | 2015-03-15 | 2016-10-19 | 中国科学院微电子研究所 | 一种金属硅化物的形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US5868854A (en) * | 1989-02-27 | 1999-02-09 | Hitachi, Ltd. | Method and apparatus for processing samples |
JP2814021B2 (ja) * | 1990-07-09 | 1998-10-22 | 三菱電機株式会社 | 半導体基板表面の処理方法 |
JPH07142447A (ja) * | 1993-11-16 | 1995-06-02 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP3529849B2 (ja) * | 1994-05-23 | 2004-05-24 | 富士通株式会社 | 半導体装置の製造方法 |
EP0945897A1 (en) * | 1998-03-25 | 1999-09-29 | Texas Instruments Incorporated | Organic gate sidewall spacers |
US6376384B1 (en) * | 2000-04-24 | 2002-04-23 | Vanguard International Semiconductor Corporation | Multiple etch contact etching method incorporating post contact etch etching |
US6444404B1 (en) * | 2000-08-09 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions |
-
2002
- 2002-04-12 JP JP2002586392A patent/JP4248882B2/ja not_active Expired - Fee Related
- 2002-04-12 KR KR1020027017534A patent/KR20030095953A/ko not_active Application Discontinuation
- 2002-04-12 EP EP02722596A patent/EP1419522A2/en not_active Withdrawn
- 2002-04-12 CN CNB028013433A patent/CN1255863C/zh not_active Expired - Fee Related
- 2002-04-12 WO PCT/IB2002/001344 patent/WO2002089191A2/en active Application Filing
- 2002-04-23 US US10/128,637 patent/US6630399B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20030095953A (ko) | 2003-12-24 |
JP2004528715A (ja) | 2004-09-16 |
CN1520608A (zh) | 2004-08-11 |
CN1255863C (zh) | 2006-05-10 |
EP1419522A2 (en) | 2004-05-19 |
WO2002089191A2 (en) | 2002-11-07 |
US6630399B2 (en) | 2003-10-07 |
WO2002089191A3 (en) | 2004-03-04 |
US20020197861A1 (en) | 2002-12-26 |
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