JP4245822B2 - Ｉｉｉ族窒化物結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法 Download PDF

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Publication number
JP4245822B2
JP4245822B2 JP2001134171A JP2001134171A JP4245822B2 JP 4245822 B2 JP4245822 B2 JP 4245822B2 JP 2001134171 A JP2001134171 A JP 2001134171A JP 2001134171 A JP2001134171 A JP 2001134171A JP 4245822 B2 JP4245822 B2 JP 4245822B2
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group iii
mixed melt
iii nitride
crystal
gan
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JP2001134171A
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Japanese (ja)
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JP2002326898A (ja
JP2002326898A5 (https=
Inventor
正二 皿山
久典 山根
昌彦 島田
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP2001134171A priority Critical patent/JP4245822B2/ja
Priority to US10/134,895 priority patent/US7001457B2/en
Publication of JP2002326898A publication Critical patent/JP2002326898A/ja
Priority to US11/302,128 priority patent/US7531038B2/en
Publication of JP2002326898A5 publication Critical patent/JP2002326898A5/ja
Priority to US12/353,608 priority patent/US8623138B2/en
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Publication of JP4245822B2 publication Critical patent/JP4245822B2/ja
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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
JP2001134171A 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法 Expired - Fee Related JP4245822B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法
US10/134,895 US7001457B2 (en) 2001-05-01 2002-04-30 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US11/302,128 US7531038B2 (en) 2001-05-01 2005-12-14 Crystal growth method
US12/353,608 US8623138B2 (en) 2001-05-01 2009-01-14 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法

Related Child Applications (1)

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JP2008247344A Division JP4956515B2 (ja) 2008-09-26 2008-09-26 Ｉｉｉ族窒化物結晶の製造方法

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JP2002326898A JP2002326898A (ja) 2002-11-12
JP2002326898A5 JP2002326898A5 (https=) 2006-06-29
JP4245822B2 true JP4245822B2 (ja) 2009-04-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045669A (ja) * 2005-08-10 2007-02-22 Ricoh Co Ltd 結晶成長装置および製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP4508613B2 (ja) * 2002-11-26 2010-07-21 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP5310611B2 (ja) * 2002-11-26 2013-10-09 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP2011082528A (ja) * 2003-11-26 2011-04-21 Ricoh Co Ltd 半導体発光素子
US7435295B2 (en) * 2004-02-19 2008-10-14 Matsushita Electric Industrial Co., Ltd. Method for producing compound single crystal and production apparatus for use therein
JP2005263511A (ja) * 2004-03-16 2005-09-29 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶および半導体デバイス
EP1741807B1 (en) * 2004-04-27 2013-09-25 Panasonic Corporation Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
US8888912B2 (en) 2005-05-12 2014-11-18 Ricoh Company, Ltd. Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP2007254201A (ja) * 2006-03-23 2007-10-04 Ngk Insulators Ltd 単結晶の製造方法
JP4760652B2 (ja) * 2006-10-03 2011-08-31 三菱化学株式会社 Ｇａ含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法
JP2009091182A (ja) * 2007-10-05 2009-04-30 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法
JP4939360B2 (ja) * 2007-10-05 2012-05-23 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP6714320B2 (ja) 2014-03-18 2020-06-24 株式会社サイオクス １３族窒化物結晶の製造方法及び１３族窒化物結晶を有する積層体
JP7218378B2 (ja) * 2018-02-19 2023-02-06 シグニファイ ホールディング ビー ヴィ ライトエンジンを備える封止デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045669A (ja) * 2005-08-10 2007-02-22 Ricoh Co Ltd 結晶成長装置および製造方法

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