JP4236742B2 - 走査形電子顕微鏡 - Google Patents

走査形電子顕微鏡 Download PDF

Info

Publication number
JP4236742B2
JP4236742B2 JP30805598A JP30805598A JP4236742B2 JP 4236742 B2 JP4236742 B2 JP 4236742B2 JP 30805598 A JP30805598 A JP 30805598A JP 30805598 A JP30805598 A JP 30805598A JP 4236742 B2 JP4236742 B2 JP 4236742B2
Authority
JP
Japan
Prior art keywords
sample
electrode
voltage
electron beam
objective lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP30805598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133194A5 (enExample
JP2000133194A (ja
Inventor
秀男 戸所
尚 高見
真 江角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP30805598A priority Critical patent/JP4236742B2/ja
Priority to US09/427,000 priority patent/US6444981B1/en
Publication of JP2000133194A publication Critical patent/JP2000133194A/ja
Priority to US10/174,053 priority patent/US6512228B2/en
Publication of JP2000133194A5 publication Critical patent/JP2000133194A5/ja
Application granted granted Critical
Publication of JP4236742B2 publication Critical patent/JP4236742B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP30805598A 1998-10-29 1998-10-29 走査形電子顕微鏡 Expired - Lifetime JP4236742B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP30805598A JP4236742B2 (ja) 1998-10-29 1998-10-29 走査形電子顕微鏡
US09/427,000 US6444981B1 (en) 1998-10-29 1999-10-26 Scanning electron microscope
US10/174,053 US6512228B2 (en) 1998-10-29 2002-06-19 Scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30805598A JP4236742B2 (ja) 1998-10-29 1998-10-29 走査形電子顕微鏡

Publications (3)

Publication Number Publication Date
JP2000133194A JP2000133194A (ja) 2000-05-12
JP2000133194A5 JP2000133194A5 (enExample) 2005-01-06
JP4236742B2 true JP4236742B2 (ja) 2009-03-11

Family

ID=17976350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30805598A Expired - Lifetime JP4236742B2 (ja) 1998-10-29 1998-10-29 走査形電子顕微鏡

Country Status (2)

Country Link
US (2) US6444981B1 (enExample)
JP (1) JP4236742B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116849A (ko) * 2020-03-18 2021-09-28 주식회사 모듈싸이 전자현미경의 이차전자와 후방산란전자 분리검출 시스템

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236742B2 (ja) * 1998-10-29 2009-03-11 株式会社日立製作所 走査形電子顕微鏡
EP1022766B1 (en) * 1998-11-30 2004-02-04 Advantest Corporation Particle beam apparatus
US6847038B2 (en) * 2002-07-15 2005-01-25 Hitachi, Ltd. Scanning electron microscope
JP2002056794A (ja) * 2000-08-08 2002-02-22 National Institute For Materials Science 電子顕微鏡用対物レンズ
EP1184725A1 (en) * 2000-09-04 2002-03-06 Infineon Technologies SC300 GmbH & Co. KG Method for adjusting a lithographic tool
JP2003068241A (ja) * 2000-11-08 2003-03-07 Seiko Instruments Inc 走査型電子線装置
JP2003100246A (ja) * 2001-09-25 2003-04-04 Toshiba Corp 荷電ビーム装置並びにパターン測定方法およびパターン描画方法
JP3953309B2 (ja) * 2001-12-04 2007-08-08 株式会社トプコン 走査電子顕微鏡装置
JP2003297272A (ja) * 2002-04-04 2003-10-17 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
US7161149B2 (en) * 2002-06-28 2007-01-09 Jeol Ltd. Scanning electron microscope and method of controlling same
US6891159B2 (en) * 2002-07-03 2005-05-10 National University Of Singapore Converting scanning electron microscopes
US6936981B2 (en) * 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
DE10301579A1 (de) 2003-01-16 2004-07-29 Leo Elektronenmikroskopie Gmbh Elektronenstrahlgerät und Detektoranordnung
JP4292068B2 (ja) * 2003-12-11 2009-07-08 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
US7212017B2 (en) * 2003-12-25 2007-05-01 Ebara Corporation Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus
JP4316394B2 (ja) * 2004-01-21 2009-08-19 株式会社東芝 荷電ビーム装置
EP2287883B1 (en) * 2004-04-15 2017-08-16 Carl Zeiss SMT GmbH Apparatus and method for investigating or modifying a surface with a beam of charged particles
US7232997B2 (en) * 2004-04-15 2007-06-19 Nawotec Gmbh Apparatus and method for investigating or modifying a surface with a beam of charged particles
JP4262158B2 (ja) * 2004-07-13 2009-05-13 株式会社日立ハイテクサイエンスシステムズ 低真空走査電子顕微鏡
US7141791B2 (en) * 2004-09-07 2006-11-28 Kla-Tencor Technologies Corporation Apparatus and method for E-beam dark field imaging
JP4500646B2 (ja) * 2004-10-18 2010-07-14 株式会社日立ハイテクノロジーズ 試料観察方法及び電子顕微鏡
EP1657736B1 (en) * 2004-11-15 2016-12-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High current density particle beam system
JP2006004953A (ja) * 2005-08-24 2006-01-05 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
JP4616180B2 (ja) * 2006-01-20 2011-01-19 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP4686385B2 (ja) * 2006-03-14 2011-05-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5271491B2 (ja) 2006-10-26 2013-08-21 株式会社日立ハイテクノロジーズ 電子線応用装置および試料検査方法
GB0700754D0 (en) * 2007-01-15 2007-02-21 Oxford Instr Analytical Ltd Charged particle analyser and method
JP4977509B2 (ja) * 2007-03-26 2012-07-18 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
GB0713276D0 (en) * 2007-07-09 2007-08-15 Medical Res Council Transmission electron microscope
JP2009128007A (ja) * 2007-11-19 2009-06-11 Tokyo Electron Ltd 検査装置、検査方法及び記憶媒体
JP5324270B2 (ja) * 2009-03-16 2013-10-23 日本電子株式会社 電子線装置
EP2365514B1 (en) * 2010-03-10 2015-08-26 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Twin beam charged particle column and method of operating thereof
KR101842101B1 (ko) * 2010-08-03 2018-03-26 가부시키가이샤 에바라 세이사꾸쇼 이물질 부착 방지 기능을 구비한 전자선 검사 장치 및 방법
JP5275396B2 (ja) * 2011-03-17 2013-08-28 株式会社東芝 電子ビーム照射装置
JP5663412B2 (ja) * 2011-06-16 2015-02-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5814741B2 (ja) * 2011-10-20 2015-11-17 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP6295027B2 (ja) * 2013-04-03 2018-03-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた計測方法
WO2017006408A1 (ja) 2015-07-06 2017-01-12 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
JP6865835B2 (ja) * 2017-08-24 2021-04-28 株式会社日立ハイテク 荷電粒子線装置およびそれを用いた観察方法、元素分析方法
US11189457B2 (en) 2017-09-29 2021-11-30 Hitachi High-Tech Corporation Scanning electron microscope
JP6950088B2 (ja) * 2018-05-22 2021-10-13 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の検出器位置調整方法
US10770262B1 (en) * 2018-05-30 2020-09-08 National Technology & Engineering Solutions Of Sandia, Llc Apparatus, method and system for imaging and utilization of SEM charged particles
US11183361B1 (en) * 2020-05-19 2021-11-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
DE102020124307A1 (de) * 2020-09-17 2022-03-17 Carl Zeiss Smt Gmbh Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren
CN114220725B (zh) * 2020-12-02 2024-05-07 聚束科技（北京）有限公司 一种电子显微镜
CN114256043B (zh) * 2020-12-02 2024-04-05 聚束科技（北京）有限公司 一种电子束系统
SE544610C2 (en) * 2021-01-29 2022-09-20 Scienta Omicron Ab Angle-resolving photoelectron spectrometer and method
CN114284124A (zh) * 2021-02-02 2022-04-05 湖州超群电子科技有限公司 一种电子束辐照增强装置及其使用方法
JP2022170466A (ja) 2021-04-28 2022-11-10 株式会社日立ハイテク 荷電粒子ビームシステム
JPWO2024218951A1 (enExample) * 2023-04-20 2024-10-24
KR20250166833A (ko) * 2024-04-23 2025-11-28 씨아이큐텍 컴퍼니 리미티드 전자 검출장치 및 주사전자현미경
CN118098914B (zh) * 2024-04-23 2024-08-27 国仪量子技术(合肥)股份有限公司 电子探测装置和扫描电镜

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220352A (ja) * 1988-02-26 1989-09-04 Hitachi Ltd 走査電子顕微鏡及びその類似装置
JPH03105837A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd 走査電子顕微鏡及びその類似装置
US5146090A (en) * 1990-06-11 1992-09-08 Siemens Aktiengesellschaft Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam
JP2927627B2 (ja) 1992-10-20 1999-07-28 株式会社日立製作所 走査電子顕微鏡
JPH0868772A (ja) * 1994-06-02 1996-03-12 Kla Instr Corp 電子ビーム・マイクロスコピーを用いた自動マスク検査装置及び方法
US5614833A (en) * 1994-10-25 1997-03-25 International Business Machines Corporation Objective lens with large field deflection system and homogeneous large area secondary electron extraction field
US5894124A (en) * 1995-03-17 1999-04-13 Hitachi, Ltd. Scanning electron microscope and its analogous device
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
EP0769799B1 (en) * 1995-10-19 2010-02-17 Hitachi, Ltd. Scanning electron microscope
US5780859A (en) * 1996-02-16 1998-07-14 Act Advanced Circuit Testing Gesellschaft Electrostatic-magnetic lens arrangement
JPH09320505A (ja) * 1996-03-29 1997-12-12 Hitachi Ltd 電子線式検査方法及びその装置並びに半導体の製造方法及びその製造ライン
DE69602936T2 (de) * 1996-07-25 1999-11-04 Act Advanced Circuit Testing Gesellschaft Fuer Testsystementwicklung Mbh Detektor-Objektivlinse
JP3434165B2 (ja) * 1997-04-18 2003-08-04 株式会社日立製作所 走査電子顕微鏡
US5789748A (en) * 1997-05-29 1998-08-04 Stanford University Low voltage electron beam system
DE19732093B4 (de) * 1997-07-25 2008-09-25 Carl Zeiss Nts Gmbh Korpuskularstrahlgerät
JP4236742B2 (ja) * 1998-10-29 2009-03-11 株式会社日立製作所 走査形電子顕微鏡

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116849A (ko) * 2020-03-18 2021-09-28 주식회사 모듈싸이 전자현미경의 이차전자와 후방산란전자 분리검출 시스템
KR102385025B1 (ko) * 2020-03-18 2022-04-11 주식회사 모듈싸이 전자현미경의 이차전자와 후방산란전자 분리검출 시스템

Also Published As

Publication number Publication date
US6444981B1 (en) 2002-09-03
US6512228B2 (en) 2003-01-28
JP2000133194A (ja) 2000-05-12
US20020148960A1 (en) 2002-10-17

Similar Documents

Publication Publication Date Title
JP4236742B2 (ja) 走査形電子顕微鏡
US11562881B2 (en) Charged particle beam system
JP4302316B2 (ja) 走査形電子顕微鏡
JP3434165B2 (ja) 走査電子顕微鏡
US7960697B2 (en) Electron beam apparatus
JP2919170B2 (ja) 走査電子顕微鏡
JP4093662B2 (ja) 走査形電子顕微鏡
JP2927627B2 (ja) 走査電子顕微鏡
CN210136840U (zh) 用于带电粒子束装置的带电粒子束转储器和多束带电粒子束装置
JPWO1999046798A1 (ja) 走査形電子顕微鏡
US8759761B2 (en) Charged corpuscular particle beam irradiating method, and charged corpuscular particle beam apparatus
JPH09171791A (ja) 走査形電子顕微鏡
JPH1167139A (ja) 走査電子顕微鏡
US6646261B2 (en) SEM provided with a secondary electron detector having a central electrode
US6580074B1 (en) Charged particle beam emitting device
JPWO1998013854A1 (ja) 荷電粒子線照射装置
JP4006946B2 (ja) 走査電子顕微鏡
EP0883158A1 (en) Scanning electron microscope
JPH05174768A (ja) 環境制御型走査電子顕微鏡
JPH11242941A (ja) 走査電子顕微鏡
JP3494152B2 (ja) 走査形電子顕微鏡
KR100711198B1 (ko) 주사형전자현미경
JP3014986B2 (ja) 走査電子顕微鏡
JP3494208B2 (ja) 走査電子顕微鏡
JP2005063983A (ja) 走査電子顕微鏡

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040212

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20040212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050912

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060417

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070226

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20070205

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070424

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081113

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081217

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121226

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131226

Year of fee payment: 5

EXPY Cancellation because of completion of term