JP4232307B2 - バッチ式熱処理装置の運用方法 - Google Patents

バッチ式熱処理装置の運用方法 Download PDF

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Publication number
JP4232307B2
JP4232307B2 JP2000013531A JP2000013531A JP4232307B2 JP 4232307 B2 JP4232307 B2 JP 4232307B2 JP 2000013531 A JP2000013531 A JP 2000013531A JP 2000013531 A JP2000013531 A JP 2000013531A JP 4232307 B2 JP4232307 B2 JP 4232307B2
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Japan
Prior art keywords
processing
processed
heat treatment
temperature
treatment apparatus
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Expired - Lifetime
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JP2000013531A
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English (en)
Japanese (ja)
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JP2000340554A5 (enExample
JP2000340554A (ja
Inventor
寿 加藤
敬子 佐野
幸夫 山本
宏之 菊地
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2000013531A priority Critical patent/JP4232307B2/ja
Priority to US09/532,901 priority patent/US6306764B1/en
Publication of JP2000340554A publication Critical patent/JP2000340554A/ja
Publication of JP2000340554A5 publication Critical patent/JP2000340554A5/ja
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Publication of JP4232307B2 publication Critical patent/JP4232307B2/ja
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    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

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  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000013531A 1999-03-23 2000-01-21 バッチ式熱処理装置の運用方法 Expired - Lifetime JP4232307B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000013531A JP4232307B2 (ja) 1999-03-23 2000-01-21 バッチ式熱処理装置の運用方法
US09/532,901 US6306764B1 (en) 1999-03-23 2000-03-22 Batch type heat-treating method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7716999 1999-03-23
JP11-77169 1999-03-23
JP2000013531A JP4232307B2 (ja) 1999-03-23 2000-01-21 バッチ式熱処理装置の運用方法

Publications (3)

Publication Number Publication Date
JP2000340554A JP2000340554A (ja) 2000-12-08
JP2000340554A5 JP2000340554A5 (enExample) 2006-09-28
JP4232307B2 true JP4232307B2 (ja) 2009-03-04

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JP2000013531A Expired - Lifetime JP4232307B2 (ja) 1999-03-23 2000-01-21 バッチ式熱処理装置の運用方法

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US (1) US6306764B1 (enExample)
JP (1) JP4232307B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
JP4686887B2 (ja) * 2001-04-09 2011-05-25 東京エレクトロン株式会社 成膜方法
JP2002329717A (ja) * 2001-04-27 2002-11-15 Tokyo Electron Ltd 被処理体の熱処理方法及びバッチ式熱処理装置
JP4731755B2 (ja) * 2001-07-26 2011-07-27 東京エレクトロン株式会社 移載装置の制御方法および熱処理方法並びに熱処理装置
DE60239683D1 (de) 2001-08-08 2011-05-19 Tokyo Electron Ltd Wärmebehandlungsverfahren und wärmebehandslungseinrichtung
JP2003051497A (ja) * 2001-08-08 2003-02-21 Tokyo Electron Ltd 熱処理方法および熱処理装置
JP3853302B2 (ja) * 2002-08-09 2006-12-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4030858B2 (ja) * 2002-10-30 2008-01-09 東京エレクトロン株式会社 熱処理装置及び熱処理方法
DE10340511B3 (de) * 2003-09-03 2004-11-11 Infineon Technologies Ag Verfahren zur Kontrolle von Batch-Anlagen
JP4586544B2 (ja) * 2004-02-17 2010-11-24 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP5264013B2 (ja) * 2004-08-13 2013-08-14 株式会社半導体エネルギー研究所 有機半導体層の成膜装置
US9150953B2 (en) 2004-08-13 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including organic semiconductor
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
JP2014045168A (ja) 2012-07-30 2014-03-13 Tokyo Electron Ltd 不純物拡散方法
FR3036200B1 (fr) * 2015-05-13 2017-05-05 Soitec Silicon On Insulator Methode de calibration pour equipements de traitement thermique
ES3041838T3 (en) * 2016-11-14 2025-11-14 Shinetsu Chemical Co Method for manufacturing high-photoelectric-conversion-efficiency solar cell
US10741426B2 (en) * 2017-09-27 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling temperature of furnace in semiconductor fabrication process
JP6784848B2 (ja) * 2017-09-27 2020-11-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105357B2 (ja) * 1989-01-28 1995-11-13 国際電気株式会社 縦型ｃｖｄ拡散装置に於けるウェーハ移載方法及び装置
JP3073627B2 (ja) * 1993-06-14 2000-08-07 東京エレクトロン株式会社 熱処理装置

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JP2000340554A (ja) 2000-12-08
US6306764B1 (en) 2001-10-23

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