JP4229482B2 - フラッシュメモリ内蔵マイクロコンピュータ - Google Patents

フラッシュメモリ内蔵マイクロコンピュータ Download PDF

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Publication number
JP4229482B2
JP4229482B2 JP29299097A JP29299097A JP4229482B2 JP 4229482 B2 JP4229482 B2 JP 4229482B2 JP 29299097 A JP29299097 A JP 29299097A JP 29299097 A JP29299097 A JP 29299097A JP 4229482 B2 JP4229482 B2 JP 4229482B2
Authority
JP
Japan
Prior art keywords
flash memory
transmission means
voltage
input terminal
microcomputer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29299097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11134317A (ja
Inventor
勝信 本郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP29299097A priority Critical patent/JP4229482B2/ja
Priority to US09/019,040 priority patent/US6032221A/en
Priority to KR1019980024037A priority patent/KR100286187B1/ko
Publication of JPH11134317A publication Critical patent/JPH11134317A/ja
Application granted granted Critical
Publication of JP4229482B2 publication Critical patent/JP4229482B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00—Digital computers in general; Data processing equipment in general
    • G06F15/76—Architectures of general purpose stored program computers
    • G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7839—Architectures of general purpose stored program computers comprising a single central processing unit with memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Microcomputers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP29299097A 1997-10-24 1997-10-24 フラッシュメモリ内蔵マイクロコンピュータ Expired - Fee Related JP4229482B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP29299097A JP4229482B2 (ja) 1997-10-24 1997-10-24 フラッシュメモリ内蔵マイクロコンピュータ
US09/019,040 US6032221A (en) 1997-10-24 1998-02-05 Flash memory embedded microcomputer
KR1019980024037A KR100286187B1 (ko) 1997-10-24 1998-06-25 플래쉬 메모리 내장 마이크로컴퓨터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29299097A JP4229482B2 (ja) 1997-10-24 1997-10-24 フラッシュメモリ内蔵マイクロコンピュータ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008146940A Division JP2008210415A (ja) 2008-06-04 2008-06-04 データ処理装置

Publications (2)

Publication Number Publication Date
JPH11134317A JPH11134317A (ja) 1999-05-21
JP4229482B2 true JP4229482B2 (ja) 2009-02-25

Family

ID=17789054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29299097A Expired - Fee Related JP4229482B2 (ja) 1997-10-24 1997-10-24 フラッシュメモリ内蔵マイクロコンピュータ

Country Status (3)

Country Link
US (1) US6032221A (ko)
JP (1) JP4229482B2 (ko)
KR (1) KR100286187B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11203266A (ja) * 1998-01-07 1999-07-30 Mitsubishi Electric Corp マイクロコンピュータ
US6718407B2 (en) * 1999-09-30 2004-04-06 Intel Corporation Multiplexer selecting one of input/output data from a low pin count interface and a program information to update a firmware device from a communication interface
KR100375217B1 (ko) * 1999-10-21 2003-03-07 삼성전자주식회사 전기적으로 재기입 가능한 불휘발성 메모리를 구비하는마이크로컨트롤러
US6226200B1 (en) * 1999-11-17 2001-05-01 Motorola Inc. In-circuit memory array bit cell threshold voltage distribution measurement
JP2002269065A (ja) * 2001-03-08 2002-09-20 Mitsubishi Electric Corp プログラム可能な不揮発性メモリを内蔵したマイクロコンピュータ
JP4049297B2 (ja) * 2001-06-11 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
US7062738B1 (en) * 2002-07-25 2006-06-13 Taiwan Semiconductor Manufacturing Company Flash memory compiler with flexible configurations
JP4653960B2 (ja) * 2003-08-07 2011-03-16 ルネサスエレクトロニクス株式会社 メモリカードおよび不揮発性メモリ混載マイコン
JP2005086108A (ja) * 2003-09-10 2005-03-31 Renesas Technology Corp 半導体集積回路
JP2012234591A (ja) * 2011-04-28 2012-11-29 Toshiba Corp 不揮発性半導体記憶装置
US9906235B2 (en) * 2016-04-12 2018-02-27 Microchip Technology Incorporated Microcontroller with digital delay line analog-to-digital converters and digital comparators
US11923017B2 (en) 2019-07-02 2024-03-05 Rohm Co., Ltd. Non-volatile storage device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461301A1 (fr) * 1978-04-25 1981-01-30 Cii Honeywell Bull Microprocesseur autoprogrammable
US5153853A (en) * 1990-09-20 1992-10-06 Sharp Kabushiki Kaisha Method and apparatus for measuring EEPROM threshold voltages in a nonvolatile DRAM memory device
JPH05325580A (ja) * 1992-05-28 1993-12-10 Mitsubishi Electric Corp 不揮発性メモリ
US5909397A (en) * 1996-10-08 1999-06-01 Texas Instruments Incorporated Method and system for testing and adjusting threshold voltages in flash eeproms

Also Published As

Publication number Publication date
JPH11134317A (ja) 1999-05-21
KR100286187B1 (ko) 2001-04-16
KR19990036538A (ko) 1999-05-25
US6032221A (en) 2000-02-29

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